화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Enhanced tunnel magnetoresistance and electric-field effect in CoFeB/MgO/CoFeB perpendicular tunnel junctions with W underlayer
Kim DH, Park KW, Park BG
Current Applied Physics, 17(7), 962, 2017
2 Tunnel magnetoresistance of homocatenated silicon and germanium clusters
Matsuura Y
Current Applied Physics, 17(11), 1465, 2017
3 Effects of Fe insertion in CoFeB in the middle electrode on the properties of MgO double-barrier magnetic tunnel junctions
Hong J, Lee S
Current Applied Physics, 17(12), 1571, 2017
4 Strongly Bias-Dependent Tunnel Magnetoresistance in Manganite Spin Filter Tunnel Junctions
Prasad B, Zhang WR, Jian J, Wang HY, Blamire MG
Advanced Materials, 27(19), 3079, 2015
5 A 4-Fold-Symmetry Hexagonal Ruthenium for Magnetic Heterostructures Exhibiting Enhanced Perpendicular Magnetic Anisotropy and Tunnel Magnetoresistance
Wen ZC, Sukegawa H, Furubayashi T, Koo J, Inomata K, Mitani S, Hadorn JP, Ohkubo T, Hono K
Advanced Materials, 26(37), 6483, 2014
6 Unveiling Self-Assembled Monolayers' Potential for Molecular Spintronics: Spin Transport at High Voltage
Galbiati M, Barraud C, Tatay S, Bouzehouane K, Deranlot C, Jacquet E, Fert A, Seneor P, Mattana R, Petroff F
Advanced Materials, 24(48), 6429, 2012
7 Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes
Mantovan R, Vangelista S, Kutrzeba-Kotowska B, Cocco S, Lamperti A, Tallarida G, Mameli D, Fanciulli M
Thin Solid Films, 520(14), 4820, 2012
8 Growth and magnetic properties of ultrathin Ni1+xFe2-xO4 films for spin filter junctions
Nagahama T, Kubota H, Yuasa S
Thin Solid Films, 519(23), 8239, 2011
9 Application of TEM to the development of information storage materials
Petford-Long AK, Kohn A, Bromwich T, Jackson V, Castano F, Singh LJ
Thin Solid Films, 505(1-2), 10, 2006
10 Structure and magnetoresistance of granular ferromagnets (Co50Fe50)(x)-Ag1-x and (Co50Fe50)(x)-(Al2O3)(1-x)
Vovk AY, Shypil OV, Kravets AF, Khan HR
Materials Science Forum, 373-3, 617, 2001