검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Photoelectron spectroscopy as an in situ contact-less method for studies of MOS properties of ultrathin oxides on Si Silva AG, Pedersen K, Li ZSS, Morgen P Applied Surface Science, 353, 1208, 2015 |
| 2 |
High-resolution structural investigation of passivated interfaces of silicon solar cells Richter S, Kaufmann K, Naumann V, Werner M, Graff A, Grosser S, Moldovan A, Zimmer M, Rentsch J, Bagdahn J, Hagendorf C Solar Energy Materials and Solar Cells, 142, 128, 2015 |
| 3 |
Electrical properties of Si-SiO2 interface traps and evolution with oxide thickness in MOSFET's with oxides from 2.3 to 1.2 nm thick Bauza D Solid-State Electronics, 47(10), 1677, 2003 |
| 4 |
A recombination- and trap-assisted tunneling model for stress-induced leakage current Ielmini D, Spinelli AS, Lacaita AL, Martinelli A, Ghidini G Solid-State Electronics, 45(8), 1361, 2001 |