검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates Vellianitis G, van Dal MJH, Duriez B, Lee TL, Passlack M, Wann CH, Diaz CH Journal of Crystal Growth, 383, 9, 2013 |
| 2 |
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures Mody J, Duffy R, Eyben P, Goossens J, Moussa A, Polspoel W, Berghmans B, van Dal MJH, Pawlak BJ, Kaiser M, Weemaes RGR, Vandervorst W Journal of Vacuum Science & Technology B, 28(1), C1H5, 2010 |
| 3 |
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (vol 28, pg C1H5, 2010) Mody J, Duffy R, Eyben P, Goossens J, Moussa A, Polspoel W, Berghmans B, van Dal MJH, Pawlak BJ, Kaiser M, Weemaes RGR, Vandervorst W Journal of Vacuum Science & Technology B, 28(3), 648, 2010 |
| 4 |
Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering Ferain I, Duffy R, Collaert N, van Dal MJH, Pawlak BJ, O'Sullivan B, Witters L, Rooyackers R, Conard T, Popovici M, van Elshocht S, Kaiser M, Weemaes RGR, Swerts J, Jurczak M, Lander RJP, De Meyer K Solid-State Electronics, 53(7), 760, 2009 |
| 5 |
Multi-gate devices for the 32 nm technology node and beyond Collaert N, De Keersgieter A, Dixit A, Ferain I, Lai LS, Lenoble D, Mercha A, Nackaerts A, Pawlak BJ, Rooyackers R, Schulz T, San KT, Son NJ, Van Dal MJH, Verheyen P, von Arnim K, Witters L, Meyer KD, Biesemans S, Jurczak M Solid-State Electronics, 52(9), 1291, 2008 |