화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Transient effects in PD SOI MOSFETs and potential DRAM applications
Okhonin S, Nagoga M, Sallese JM, Fazan P, Faynot O, Pontcharra J, Cristoloveanu S, van Meer H, De Meyer K
Solid-State Electronics, 46(11), 1709, 2002
2 Threshold voltage model for deep-submicron fully depleted SOICMOS transistors including the effect of source/drain fringing fields into the buried oxide
van Meer H, De Meyer K
Solid-State Electronics, 45(4), 593, 2001