검색결과 : 2건
No. | Article |
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1 |
Transient effects in PD SOI MOSFETs and potential DRAM applications Okhonin S, Nagoga M, Sallese JM, Fazan P, Faynot O, Pontcharra J, Cristoloveanu S, van Meer H, De Meyer K Solid-State Electronics, 46(11), 1709, 2002 |
2 |
Threshold voltage model for deep-submicron fully depleted SOICMOS transistors including the effect of source/drain fringing fields into the buried oxide van Meer H, De Meyer K Solid-State Electronics, 45(4), 593, 2001 |