화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p(+)n junctions
Sakic A, Qi L, Scholtes TLM, van der Cingel J, Nanver LK
Solid-State Electronics, 84, 65, 2013
2 Integration of MOSFETs with SiGe dots as stressor material
Nanver LK, Jovanovic V, Biasotto C, Moers J, Grutzmacher D, Zhang JJ, Hrauda N, Stoffel M, Pezzoli F, Schmidt OG, Miglio L, Kosina H, Marzegalli A, Vastola G, Mussler G, Stangl J, Bauer G, van der Cingel J, Bonera E
Solid-State Electronics, 60(1), 75, 2011