화학공학소재연구정보센터
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No. Article
1 Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer
Chauhan P, Hasenohrl S, Dobrocka E, Vanco L, Stoklas R, Kovac J, Siffalovic P, Kuzmil J
Applied Surface Science, 470, 1, 2019
2 Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys
Ohkawa K, Ichinohe F, Watanabe T, Nakamura K, Iida D
Journal of Crystal Growth, 512, 69, 2019
3 Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
Nagamatsu K, Ando Y, Kono T, Cheong H, Nitta S, Honda Y, Pristovsek M, Amano H
Journal of Crystal Growth, 512, 78, 2019
4 Characterization of high-quality relaxed flat InGaN template fabricated by combination of epitaxial lateral overgrowth and chemical mechanical polishing
Okada N, Inomata Y, Ikeuchi H, Fujimoto S, Itakura H, Nakashima S, Kawamura R, Tadatomo K
Journal of Crystal Growth, 512, 147, 2019
5 InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET
Cerba T, Hauchecorne P, Martin M, Moeyaert J, Alcotte R, Salem B, Eustache E, Bezard P, Chevalier X, Lombard G, Bassani F, David S, Beainy G, Tournie E, Patriarche G, Boutry H, Bawedin M, Baron T
Journal of Crystal Growth, 510, 18, 2019
6 Growth behavior of wafer-scale two-dimensional MoS2 layer growth using metal-organic chemical vapor deposition
Kwak T, Lee J, So B, Choi U, Nam O
Journal of Crystal Growth, 510, 50, 2019
7 Heteroepitaxial growth of alpha-, beta-, gamma- and kappa-Ga2O3 phases by metalorganic vapor phase epitaxy
Gottschalch V, Merker S, Blaurock S, Kneiss M, Teschner U, Grundmann M, Krautscheid H
Journal of Crystal Growth, 510, 76, 2019
8 Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
Liu ZB, Nitta S, Usami S, Robin Y, Kushimoto M, Deki M, Honda Y, Pristovsek M, Amano H
Journal of Crystal Growth, 509, 50, 2019
9 Fabrication of star-shaped InP/GaInAs core-multishell nanowires by self-catalytic VLS mode
Yoshimura S, Takano K, Ishida K, Shimomura K
Journal of Crystal Growth, 509, 66, 2019
10 High throughput MOVPE and accelerated growth rate of GaAs for PV application
Ubukata A, Sodabanlu H, Aihara T, Oshima R, Sugaya T, Koseki S, Matsumoto K, Watanabe K, Nakano Y, Sugiyama M
Journal of Crystal Growth, 509, 87, 2019