검색결과 : 1,581건
No. | Article |
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1 |
Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer Chauhan P, Hasenohrl S, Dobrocka E, Vanco L, Stoklas R, Kovac J, Siffalovic P, Kuzmil J Applied Surface Science, 470, 1, 2019 |
2 |
Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys Ohkawa K, Ichinohe F, Watanabe T, Nakamura K, Iida D Journal of Crystal Growth, 512, 69, 2019 |
3 |
Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE Nagamatsu K, Ando Y, Kono T, Cheong H, Nitta S, Honda Y, Pristovsek M, Amano H Journal of Crystal Growth, 512, 78, 2019 |
4 |
Characterization of high-quality relaxed flat InGaN template fabricated by combination of epitaxial lateral overgrowth and chemical mechanical polishing Okada N, Inomata Y, Ikeuchi H, Fujimoto S, Itakura H, Nakashima S, Kawamura R, Tadatomo K Journal of Crystal Growth, 512, 147, 2019 |
5 |
InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET Cerba T, Hauchecorne P, Martin M, Moeyaert J, Alcotte R, Salem B, Eustache E, Bezard P, Chevalier X, Lombard G, Bassani F, David S, Beainy G, Tournie E, Patriarche G, Boutry H, Bawedin M, Baron T Journal of Crystal Growth, 510, 18, 2019 |
6 |
Growth behavior of wafer-scale two-dimensional MoS2 layer growth using metal-organic chemical vapor deposition Kwak T, Lee J, So B, Choi U, Nam O Journal of Crystal Growth, 510, 50, 2019 |
7 |
Heteroepitaxial growth of alpha-, beta-, gamma- and kappa-Ga2O3 phases by metalorganic vapor phase epitaxy Gottschalch V, Merker S, Blaurock S, Kneiss M, Teschner U, Grundmann M, Krautscheid H Journal of Crystal Growth, 510, 76, 2019 |
8 |
Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy Liu ZB, Nitta S, Usami S, Robin Y, Kushimoto M, Deki M, Honda Y, Pristovsek M, Amano H Journal of Crystal Growth, 509, 50, 2019 |
9 |
Fabrication of star-shaped InP/GaInAs core-multishell nanowires by self-catalytic VLS mode Yoshimura S, Takano K, Ishida K, Shimomura K Journal of Crystal Growth, 509, 66, 2019 |
10 |
High throughput MOVPE and accelerated growth rate of GaAs for PV application Ubukata A, Sodabanlu H, Aihara T, Oshima R, Sugaya T, Koseki S, Matsumoto K, Watanabe K, Nakano Y, Sugiyama M Journal of Crystal Growth, 509, 87, 2019 |