| 1 |
A General Approach to Coordination Control of Mobile Agents With Motion Constraints
Zhao SY, Dimarogonas DV, Sun ZY, Bauso D
IEEE Transactions on Automatic Control, 63(5), 1509, 2018 |
| 2 |
Semi-analytical minimum time solutions with velocity constraints for trajectory following of vehicles
Frego M, Bertolazzi E, Biral F, Fontanelli D, Palopoli L
Automatica, 86, 18, 2017 |
| 3 |
Analysis of the impedance field of saturated MOSFETs and drain thermal noise
Lee KY
Solid-State Electronics, 130, 63, 2017 |
| 4 |
Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs
Ong SN, Yeo KS, Chew KWJ, Chan LHK, Loo XS, Boon CC, Do MA
Solid-State Electronics, 72, 8, 2012 |
| 5 |
Drain current model for nanoscale double-gate MOSFETs
Hariharan V, Thakker R, Singh K, Sachid AB, Patil MB, Vasi J, Rao VR
Solid-State Electronics, 53(9), 1001, 2009 |
| 6 |
An analytical channel thermal noise model for deep-submicron MOSFETs with short channel effects
Jeon J, Lee JD, Park BG, Shin H
Solid-State Electronics, 51(7), 1034, 2007 |
| 7 |
Modelling velocity saturation and kink effects in p-channel polysilicon thin-film transistors
Valletta A, Gaucci P, Mariucci L, Fortunato G
Thin Solid Films, 515(19), 7417, 2007 |
| 8 |
Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation
Chang ST, Liu CW, Lu SC
Solid-State Electronics, 48(2), 207, 2004 |
| 9 |
Drain current thermal noise modeling for deep submicron n- and p-channel MOSFETs
Han K, Shin H, Lee K
Solid-State Electronics, 48(12), 2255, 2004 |
| 10 |
Improved measurements of high-field drift velocity in silicon carbide
Khan IA, Cooper JA
Materials Science Forum, 338-3, 761, 2000 |
