화학공학소재연구정보센터
검색결과 : 37건
No. Article
1 Measurement and evaluation of the defects in Cd1-xZnxTe materials by observing their etch pits in real time
Yu HX, Yang JR, Zhang JJ, Xu C, Sun SW, Zhou CH
Journal of Crystal Growth, 506, 1, 2019
2 Theoretical aspects and microstructural investigations on V-pit defects in HVPE grown GaN
Knetzger M, Meissner E, Schroter C, Friedrich J
Journal of Crystal Growth, 518, 51, 2019
3 Hot-pressed production and laser properties of ZnSe:Fe2+
Avetisov RI, Balabanov SS, Firsov KN, Gavrishchuk EM, Gladilin AA, Ikonnikov VB, Kalinushkin VP, Kazantsev SY, Kononov IG, Zykova MP, Mozhevitina EN, Khomyakov AV, Savin DV, Timofeeva NA, Uvarov OV, Avetissov IC
Journal of Crystal Growth, 491, 36, 2018
4 Oxygen precipitation behavior in heavily arsenic doped silicon crystals
Haringer S, Gambar D, Porrini M
Journal of Crystal Growth, 457, 325, 2017
5 A new heating stage for high Temperature/low fO(2) conditions
Tissandier L, Florentin L, Lequin D, Baillot P, Faure F
Journal of Crystal Growth, 458, 72, 2017
6 Concentration and composition of gas inclusions in some oxide crystals
Arhipov P, Tkachenko S, Galenin E, Gerasymov I, Sidletskiy O, Kudin K, Lebbou K
Journal of Crystal Growth, 459, 189, 2017
7 Voids in silicon as a sink for interstitial iron: a density functional study
Al-Ani OA, Goss JP, Al-Hadidi M, Briddon PR, Rayson MJ, Cowern NEB
Journal of Crystal Growth, 468, 101, 2017
8 Suppression of twin generation in the growth of GaAs on Ge (111) substrates
Kajikawa Y, Son Y, Hayase H, Ichiba H, Mori R, Ushirogouchi K, Irie M
Journal of Crystal Growth, 477, 40, 2017
9 Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates
Bogumilowicz Y, Hartmann JM, Rochat N, Salaun A, Martin M, Bassani F, Baron T, David S, Bao XY, Sanchez E
Journal of Crystal Growth, 453, 180, 2016
10 First-cycle defect evolution of Li1-xNi1/3Mn1/3Co1/3O2 lithium ion battery electrodes investigated by positron annihilation spectroscopy
Seidlmayer S, Buchberger I, Reiner M, Gigl T, Gilles R, Gasteiger HA, Hugenschmidt C
Journal of Power Sources, 336, 224, 2016