화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates
Satter MM, Islam AE, Varghese D, Alam MA, Haque A
Solid-State Electronics, 56(1), 141, 2011
2 Wave function penetration effects on ballistic drain current in double gate MOSFETs fabricated on (100) and (110) silicon surfaces
Ashraf MK, Khan AI, Haque A
Solid-State Electronics, 53(3), 271, 2009
3 Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics
Hakim MMA, Haque A
Solid-State Electronics, 48(7), 1095, 2004