1 |
Single-layer graphene/titanium oxide cubic nanorods array/FTO heterojunction for sensitive ultraviolet light detection Liang FX, Wang JZ, Wang Y, Lin Y, Liang L, Gao Y, Luo LB Applied Surface Science, 426, 391, 2017 |
2 |
Temperature dependence of the lifetime of nonequilibrium charge carriers in GaP diodes under condition of recombination current domination Krasnov VA, Shutov SV, Yerochin SY Current Applied Physics, 15(4), 504, 2015 |
3 |
Hole injection and dielectric breakdown in 6H-SiC and 4H-SiC metal-oxide-semiconductor structures during substrate electron injection via Fowler-Nordheim tunneling Samanta P, Mandal KC Solid-State Electronics, 114, 60, 2015 |
4 |
Lattice and internal relaxation of ZnO thin film under in-plane strain Qin GQ, Zhang GL, Li DC, Liu SM Thin Solid Films, 519(1), 378, 2010 |
5 |
Growth and properties of YAlO film synthesized by RF magnetron sputtering Matsunouchi K, Komatsu N, Kimura C, Aoki H, Sugino T Applied Surface Science, 255(9), 5021, 2009 |
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Stability of MgO(111) films grown on 6H-SiC(0001) by molecular beam epitaxy for two-step integration of functional oxides Goodrich TL, Cai Z, Ziemer KS Applied Surface Science, 254(10), 3191, 2008 |
7 |
Ab initio molecular orbital study on atmosphere-sensitive characteristics of the alternate supply OMVPE growth of ZnSe Hayashi K, Omote N, Kanayama T Solid State Ionics, 172(1-4), 165, 2004 |
8 |
Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface Kimoto T, Hirao T, Fujihira K, Kosugi H, Danno K, Matsunami H Applied Surface Science, 216(1-4), 497, 2003 |
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Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology Doolittle WA, Namkoong G, Carver AG, Brown AS Solid-State Electronics, 47(12), 2143, 2003 |
10 |
Ag growth on 3C-SiC(001) c(2x2) C-terminated and c(4x2) Si-terminated surfaces Rodriguez N, D'Angelo M, Aristov VY, Soukiassian P, Lescuras A, Croti C, Pedio M, Perfetti P Materials Science Forum, 433-4, 587, 2002 |