| 349 - 353 |
Morphology and lightguide property investigation of a high quality DAST single crystal
Chen-Yang YW, Sheu TJ, Lin SS, Tu YK |
| 355 - 358 |
A new rf plasma oxidation method for the insulating AlOx barrier in magnetic tunneling junctions
Yoon KS, Yang JY, Park JH, Choi WJ, Kim YD, Kim CO, Hong JP |
| 359 - 364 |
Emission and capture processes in radiation-damaged silicon semiconductor diodes
McPherson M |
| 365 - 371 |
Photo-electronic phenomena in narrow gap Hg1-xCdxTe
Dai N, Chang Y, Wang XG, Li B, Chu JH |
| 373 - 378 |
Optoelectronic transport mechanism from subband infrared absorption and tunneling regeneration
Deng J, Shen GD, Lian P, Liu SY, Li L, Shi YL, Wu JM, Niu NH, Zou DS |
| 379 - 382 |
Characteristics of molecular beam epitaxy-grown GaFeAs
Park YJ, Oh HT, Park CJ, Cho HY, Shon Y, Kim EK, Moriya R, Munekata H |
| 383 - 387 |
Optical resonant modes in InGaN MQW/GaN micro-cone
Dai L, Zhang B, Wang RP, Lin JY, Jiang HX |
| 389 - 391 |
Initial stage of CdTe on Si(100) grown by MBE
Jung HS, Kim HJ |
| 393 - 399 |
Studies of 6H-SiC devices
Wang SR, Liu ZL |
| 401 - 406 |
Electrical conduction mechanism in amorphous Se80In20-xPbx films
Khan MAM, Zulfequar M, Husain M |
| 407 - 409 |
Low-temperature processing of sol-gel-derived lead-zirconate-titanate thin films by oxygen-plasma treatment
Kang EK, Jang HK, Lee SK, Park ER, Lee CE, Kim KM, Noh SJ, Yeom SJ |
| 411 - 415 |
ESR study of magnetic structures in La0.7Ca0.3MnO3
Joh KW, Lee CE, Lee CH, Jeong YH |
| 417 - 419 |
An organic electrophosphorescent device driven by all-organic thin-film transistor using photoacryl as a gate insulator
Pyo SW, Kim YM, Kim JH, Shim JH, Jung LY, Kim YK |
| 421 - 424 |
Ion doping system for low temperature poly-silicon TFT
Kawasaki Y |
| 425 - 430 |
The superconducting bismuth-based mixed oxides
Antipov EV, Khasanova NR, Pshirkov JS, Putilin SN, Bougerol C, Lebedev OI, Van Tendeloo G, Baranov AN, Park YW |
| 431 - 438 |
High T-c superconductivity caused by vibronic mechanism
Tachiki M |
