2935 - 2941 |
Mechanism of Atmospheric Corrosion of Copper in the Presence of Submicron Ammonium-Sulfate Particles at 300 and 373 K Lobnig RE, Frankenthal RP, Siconolfi DJ, Sinclair JD, Stratmann M |
2942 - 2946 |
Chemical Attack Onpolypyrrole by Electrolytically Generated Solution Species in Aqueous Chloride Medium Chen CC, Rajeshwar K |
2947 - 2955 |
3-Dimensional Thermal Modeling of Lithium-Polymer Batteries Under Galvanostatic Discharge and Dynamic Power Profile Chen YF, Evans JW |
2956 - 2959 |
Stabilized Alpha-Ni(Oh)2 as Electrode Material for Alkaline Secondary Cells Kamath PV, Dixit M, Indira L, Shukla AK, Kumar VG, Munichandraiah N |
2959 - 2966 |
Synthesis and Performance of Licoo2 Cathodes for the Molten-Carbonate Fuel-Cell Lagergren C, Lundblad A, Bergman B |
2966 - 2971 |
Li Deintercalation-Intercalation Reaction and Structural-Change in Lithium Transition-Metal Nitride, Li7Mnn4 Nishijima M, Tadokoro N, Takeda Y, Imanishi N, Yamamoto O |
2972 - 2977 |
Solid-State Redox Reactions of Licoo2 (R(3)over-Bar-M) for 4 Volt Secondary Lithium Cells Ohzuku T, Ueda A |
2978 - 2981 |
Thermal-Stability of the Polymer Electrolyte (Peo)8Licf3So3 Shodai T, Owens BB, Ohtsuka H, Yamaki J |
2982 - 2988 |
Electrochemical Study of Tantalum in Fluoride and Oxofluoride Melts Polyakova LP, Polyakov EG, Matthiesen F, Christensen E, Bjerrum NJ |
2989 - 2996 |
Electrochemical Properties of Organic Liquid Electrolytes Based on Quaternary Onium Salts for Electrical Double-Layer Capacitors Ue M, Ida K, Mori S |
2996 - 3001 |
Voltammetric Investigation of Hydrogen Sorption-Desorption at Within Oxide-Derived Pd Electrodes in NaOH and H2SO4 Hu CC, Wen TC |
3002 - 3005 |
Tungsten Tungsten-Oxide pH Sensing Electrode for High-Temperature Aqueous Environments Kriksunov LB, Macdonald DD, Millett PJ |
3006 - 3015 |
Modeling of the Factors Contributing to the Initiation and Propagation of the Crevice Corrosion of Alloy 625 Lillard RS, Scully JR |
3016 - 3027 |
XPS and STM Investigation of the Passive Film Formed on Cr(110) Single-Crystal Surfaces Maurice V, Yang WP, Marcus P |
3028 - 3040 |
Metastable Pitting of Aluminum and Criteria for the Transition to Stable Pit Growth Pride ST, Scully JR, Hudson JL |
3040 - 3049 |
Corrosion of Nickel in Molten-Carbonate Vossen JP, Plomp L, Dewit JH |
3049 - 3052 |
Effects of Electrogenerated Silver Particles on the Electrochemistry of Zeolite-Encapsulated Iron SALEN Complex Bedioui F, Roue L, Devynck J, Balkus KJ |
3053 - 3059 |
Microelectrode Study of the Lithium Propylene Carbonate Interface - Temperature and Concentration-Dependence of Physicochemical Parameters Verbrugge MW, Koch BJ |
3059 - 3070 |
Electrodeposition of Ni1-xAlx in a Chloroaluminate Melt Moffat TP |
3071 - 3076 |
Light-Emission from Porous Silicon Under Photoexcitation and Electroexcitation Bsiesy A, Vial JC, Gaspard F, Herino R, Ligeon M, Mihalcescu I, Muller F, Romestain R |
3077 - 3081 |
Preparation of a Langmuir-Blodgett Layer of Ultrafine Platinum Particles and Its Application to N-Si for Efficient Photoelectrochemical Solar-Cells Yae S, Inakanishi I, Nakato Y, Toshima N, Mori H |
3082 - 3090 |
Anodic-Oxidation of Methanol on Pt/WO3 in Acidic Media Shen PK, Tseung AC |
3090 - 3095 |
Efficient Photoelectrochemical Solar-Cells Equipped with an N-Si Electrode Modified with Colloidal Platinum Particles Yae S, Tsuda R, Kai T, Kikuchi K, Uetsuji M, Fujii T, Fujitani M, Nakato Y |
3096 - 3103 |
The Single-Electrode Peltier Heats of Li-Al Alloy Electrodes in LiCl-KCl Eutectic System Amezawa K, Ito Y, Tomii Y |
3103 - 3114 |
Interactions Among Bipolar Spheres in an Electrolytic Cell Keh HJ, Li WJ |
3114 - 3119 |
Limiting Current of Oxygen Reduction on Gas-Diffusion Electrodes for Phosphoric-Acid Fuel-Cells Li QF, Xiao G, Hjuler HA, Berg RW, Bjerrum NJ |
3119 - 3127 |
Fischer-Tropsch Electrochemical CO2 Reduction to Fuels and Chemicals Schwartz M, Vercauteren ME, Sammells AF |
3128 - 3136 |
Hydrogen Passivation of HF-Last Cleaned (100)Silicon Surfaces Investigated by Multiple Internal-Reflection Infrared-Spectroscopy Bender H, Verhaverbeke S, Heyns MM |
3136 - 3140 |
In-Situ Remote H-Plasma Cleaning of Patterned Si-SiO2 Surfaces Carter RJ, Schneider TP, Montgomery JS, Nemanich RJ |
3141 - 3145 |
Chemically Amplified Resists Using 1,2-Naphthoquinone Diazide-4-Sulfonates as Photoacid Generators Hayase R, Onishi Y, Niki H, Oyasato N, Hayase S |
3145 - 3151 |
Surface-Analysis of Si(111) Wafers Using 2nd-Harmonic Generation Hillrichs G, Graf D, Marowsky G, Roders O, Schnegg A, Wagner P |
3151 - 3153 |
Reactive Facet Sputtering of SiO2 Iyer R |
3154 - 3157 |
Microdefects in Oxide-Films Deposited on Featured Surfaces of VLSI Substrates by Thermal CVD of Teos and O2 Kato H, Sakai H, Sugawara K |
3158 - 3161 |
The Annealing Time and Temperature-Dependence of Electrical Dopant Activation in High-Dose Bf2 Ion-Implanted Silicon Kato J |
3162 - 3166 |
Chemically Amplified Resist Using Self-Solubility Acceleration Effect Kihara N, Ushirogouchi T, Tada T, Naito T, Saito S, Nakase M |
3167 - 3172 |
A Simple Method to Control Bipolar Polysilicon Emitter Interfacial Oxide Parekh NS, Taylor RV, Massetti DO |
3172 - 3176 |
Phosphor Development for Alpha-Silicon Liquid-Crystal Light Valve Projection Display Sluzky E, Lemoine M, Hesse K |
3177 - 3181 |
The Physicochemical Properties and Growth-Mechanism of Oxide (SiO2-Xfx) by Liquid-Phase Deposition with H2O Addition Only Yeh CF, Chen CL, Lin GH |
3182 - 3188 |
Fabrication of Vertical Sidewalls by Anisotropic Etching of Silicon (100) Wafers Zavracky PM, Earles T, Pokrovskiy NL, Green JA, Burns BE |
3188 - 3193 |
Local Environment of Ce3+ Ions in CAS Prepared with or Without Flux Kanehisa O, Yamamoto H, Okamura T, Morita M |
3193 - 3199 |
Formation Mechanism of Supposed Negative Fixed Charges in Glass Murakami S |
3200 - 3209 |
Modeling, Identification, and Control of Rapid Thermal-Processing Systems Schaper CD, Moslehi MM, Saraswat KC, Kailath T |
3210 - 3213 |
Growth of In2O3 Thin-Films by Atomic Layer Epitaxy Asikainen T, Ritala M, Leskela M |
3214 - 3218 |
The Initial Growth-Mechanism of Silicon-Oxide by Liquid-Phase Deposition Chou JS, Lee SC |
3218 - 3221 |
Plasma-Induced Damage in a Planar Inductively-Coupled Etch Reactor Cotler TJ, Forster J, Barnes M, Kocon W |
3222 - 3225 |
Effects of Oxide Thickness and Oxidation Parameters on the Electrical Characteristics of Thin Oxides Grown by Rapid Thermal-Oxidation of Si in N2O Eftekhari G |
3225 - 3230 |
A Kinetics Study of the Bond Strength of Direct-Bonded Wafers Farrens SN, Hunt CE, Roberds BE, Smith JK |
3230 - 3234 |
Effect of Plasma-Etching Edge-Type Exposures on Si Substrates - A Correlation Between Carrier Lifetime and Etch-Induced Defect States Gu T, Awadelkarim OO, Fonash SJ, Rembetski JF, Chan YD |
3234 - 3237 |
Kinetics and Compositional Dependence on the Microwave-Power and SiH4/N2 Flow Ratio of Silicon-Nitride Deposited by Electron-Cyclotron-Resonance Plasmas Hernandez MJ, Garrido J, Martinez J, Piqueras J |
3238 - 3241 |
Electrooptical Characterization of Sulfur-Annealed Chemical-Bath Deposited CdS Films Hernandez L, Demelo O, Zelayaangel O, Lozadamorales R |
3242 - 3245 |
GaAs Low-Temperature Fusion Bonding Hjort K, Ericson F, Schweitz JA, Hallin C, Janzen E |
3246 - 3249 |
Chlorine-Activated Diamond Chemical-Vapor-Deposition Pan CY, Chu CJ, Margrave JL, Hauge RH |
3250 - 3253 |
Reliability Implications of Lateral Alkali-Ion Migration in MOS Integrated-Circuits Schnable GL, Schlesier KM, Wu CP, Comizzoli RB |
3254 - 3258 |
Electrical and Microstructural Studies of SnO2 Ceramics Obtained by Tin Sulfate Pyrolysis Schmatz U, Delabouglise G, Labeau M, Garden J |
3259 - 3263 |
Atomic-Force Microscopy Observation of Si(100) Surface After Hydrogen Annealing Yanase Y, Horie H, Oka Y, Sano M, Sumita S, Shigematsu T |
3264 - 3268 |
The Chemical Etching of GaSb in Br2-Methanol Solutions Tan SS, Milnes AG |
3269 - 3273 |
Growth-Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh-Vacuum Rapid Thermal Chemical-Vapor-Deposition Reactor Violette KE, Sanganeria MK, Ozturk MC, Harris G, Maher DM |
3273 - 3277 |
Characterization of Crystal Originated Defects in Czochralski Silicon Using Nonagitated Secco Etching Wijaranakula W |
3278 - 3290 |
Correlations of Atomic-Structure and Reactivity at Solid-Gas and Solid-Liquid Interfaces Stanners CD, Gardin D, Somorjai GA |
3290 - 3290 |
Effects of Deposition and Ion-Scattering on Profile Control in Submicron Oxide Etch (Vol 141, Pg 2904, 1994) Shan H, Srinivasan BK, Jillie DW, Multani JS, Lo WJ |
3290 - 3290 |
Anodic Activation of Sulfur in Organic-Solvents (Vol 141, Pg 316, 1994) Leguillanton G, Elothmani D, Do QT, Simonet J |
L143 - L144 |
The Behavior of Carbon Electrodes Derived from Poly(P-Phenylene) in Polyacrylonitrile-Based Polymer Electrolyte Cells Alamgir M, Zuo Q, Abraham KM |
L145 - L147 |
Orthorhombic Naxmno2 as a Cathode Material for Secondary Sodium and Lithium Polymer Batteries Doeff MM, Peng MY, Ma YP, Dejonghe LC |
L147 - L150 |
Spinal Anodes for Lithium-Ion Batteries Ferg E, Gummow RJ, Dekock A, Thackeray MM |
L150 - L152 |
Thermal-Oxidation of SiC in N2O Demeo RC, Wang TK, Chow TP, Brown DM, Matus LG |
L153 - L155 |
In-Situ Monitoring of Electrode Surface Modification via Confocal Scanning Beam Laser Microscopy Gu ZH, Fahidy TZ, Damaskinos S, Dixon AE |
L155 - L157 |
Calculation of Noise Resistance from Simultaneous Electrochemical Voltage and Current Noise Data Bierwagen GP |