399 - 408 |
Composite Electrolytes Prepared from Fumed Silica, Polyethylene Oxide Oligomers, and Lithium Salk Fan J, Fedkiw PS |
408 - 417 |
Electrochemically Active Licoo2 and LiNiO2 Made by Cationic Exchange Under Hydrothermal Conditions Larcher D, Palacin MR, Amatucci GG, Tarascon JM |
418 - 423 |
The Migration of Fluoride Ions in Growing Anodic Oxide-Films on Tantalum Shimizu K, Kobayashi K, Thompson GE, Skeldon P, Wood GC |
423 - 428 |
Direct Methanol Oxidation on Platinum-Electrodes with Ruthenium Adatoms in Hot Phosphoric-Acid Watanabe M, Genjima Y, Turumi K |
428 - 436 |
An Attempt to Quantify Electrodeposit Metallographic Growth Structures Winand R, Vanham P, Colin R, Milojevic D |
436 - 442 |
Use of Polyaniline and Its Derivatives in Corrosion Protection of Copper and Silver Brusic V, Angelopoulos M, Graham T |
443 - 449 |
In-Situ Conductivity Study of the Corrosion Layers on Lead-Tin Alloy in Sulfuric-Acid Mattesco P, Bui N, Simon P |
450 - 454 |
Cathodic Protection of a Plane with Parallel Cylindrical Anodes Newman J |
455 - 460 |
Electrochemical Fabrication of Sharp Nickel Tips in H2SO4 Solutions Nikolova MS, Natarajan A, Searson PC, Chakarova GS, Macaulay JM |
461 - 466 |
Morphology and Structure of Water-Formed Oxides on Ternary Mgal Alloys Nordlien JH, Nisancioglu K, Ono S, Masuko N |
466 - 470 |
Shape Evolution of Electrodeposited Copper Bumps with High Peclet Numbers Kondo K, Fukui K, Yokoyama M, Shinohara K |
471 - 476 |
Fabrication of Nickel Microbump on Aluminum Using Electroless Nickel-Plating Watanabe H, Honma H |
477 - 481 |
Electrochromism of Polyaniline Film Incorporating a Red Quinone 1-Amino-4-Bromoanthraquinone-2-Sulfonate Yano J |
481 - 484 |
Atomic-Force Microscopy Study of Surface-Morphology of Zinc-Iron Electrodeposits Czerwinski F, Kondo K, Szpunar JA |
485 - 493 |
Electrochemical and in-Situ Raman-Spectroscopic Characterization of Nickel-Hydroxide Electrodes Kostecki R, Mclarnon F |
493 - 496 |
In-Situ Monitoring of Electrochemical Processes at the (100)P-Si/Aqueous NH4(F) Electrolyte Interface by Photoluminescence Rappich J, Timoshenko VY, Dittrich T |
497 - 502 |
Manifestation of Photocatalysis Process Variables in a Titanium Dioxide-Based Slurry Photoelectrochemical Cell Lin WY, Detacconi NR, Smith RL, Rajeshwar K |
503 - 510 |
A Mathematical-Model for Predicting Nonuniform Electrochemical Impregnation of Nickel-Hydroxide Nagarajan GS, Ho CH, Vanzee JW |
511 - 519 |
Studies of the Hydrogen Evolution Reaction an Ni-P Electrodes Shervedani RK, Lasia A |
520 - 524 |
Synthesis of Nanocrystalline VO2 and Its Electrochemical-Behavior in Lithium Batteries Tsang C, Manthiram A |
524 - 532 |
A Stable Thin-Film Lithium Electrolyte - Lithium Phosphorus Oxynitride Yu XH, Bates JB, Jellison GE, Hart FX |
532 - 539 |
Electrochemical-Behavior of Molten V2O5-K2S2O7-Khso4 Systems Petrushina IM, Bjerrum NJ, Berg RW, Cappeln F |
539 - 545 |
Electrocatalytic Formation of CH4 from CO2 on a Pt Gas-Diffusion Electrode Hara K, Sakata T |
546 - 553 |
Semiconductor Electrochemistry of Particulate Pyrite - Mechanisms and Products of Dissolution Wei DW, Osseoasare K |
554 - 557 |
A Cell for in-Situ X-Ray-Diffraction Based on Coin Cell Hardware and Bellcore Plastic Electrode Technology Richard MN, Koetschau I, Dahn JR |
558 - 566 |
Oxide Film Formation at a Microcrystalline Al-Alloy in Room-Temperature Neutral Borate Solution Thomas SC, Birss VI |
566 - 572 |
Electrochemical-Behavior of Sol-Gel Produced Ni and Ni-Co Oxide-Films Serebrennikova I, Birss VI |
573 - 581 |
Activation of Ruthenium Oxide, Iridium Oxide, and Mixed Ruxir1-X Oxide Electrodes During Cathodic Polarization and Hydrogen Evolution Blouin M, Guay D |
582 - 585 |
Reaction-Zone Expansions and Mechanism of the O-2, Ag/Yttria-Stabilized Zirconia Electrode-Reaction Jimenez R, Kloidt T, Kleitz M |
586 - 594 |
Investigations of Thiosulfate Accumulation on 304-Stainless-Steel in Neutral Solutions by Radioactive Labeling, Electrochemistry, Auger-Electron and X-Ray Photoelectron-Spectroscopy Methods Thomas AE, Kolics A, Wieckowski A |
595 - 599 |
Tungsten-Oxide Thin-Films Chemically Vapor-Deposited at Low-Pressure by W(Co)(6) Pyrolysis Davazoglou D, Moutsakis A, Valamontes V, Psycharis V, Tsamakis D |
600 - 605 |
Observation of Defects in Thermal Oxides of Polysilicon by Transmission Electron-Microscopy Using Copper Decoration Itsumi M, Akiya H, Tomita M, Ueki T, Yamawaki M |
605 - 616 |
Nanoscale Lithography of Silicon Dioxide Using Electron-Beam Patterned Carboxylic-Acids as Localized Etch Initiators Whidden TK, Yang SJ, Jenkinsgray A, Pan M, Kozicki MN |
617 - 621 |
Optimization of Photocurable Polyurethane Membrane-Composition for Ammonium Ion Sensor Bratov A, Abramova N, Munoz J, Dominguez C, Alegret S, Batroli J |
622 - 627 |
Structural Quality of Directly Bonded Silicon-Wafers with Regularly Grooved Interfaces Kim ED, Kim SC, Park JM, Grekhov IV, Argunova TS, Kostina LS, Kudryavtzeva TV |
627 - 633 |
Effects of Bromine-Methanol and Hydrogen-Chloride Pretreatments on Pt/Al/N-InP Diodes Huang WC, Lei TF, Lee CL |
634 - 640 |
Kinetics of Power Deposition and Silane Dissociation in Radiofrequency Discharges Spiliopoulos N, Mataras D, Rapakoulias DE |
641 - 646 |
Configurational and Electrical Behavior of Ni-YSZ Cermet with Novel Microstructure for Solid Oxide Fuel-Cell Anodes Itoh H, Yamamoto T, Mori M, Horita T, Sakai N, Yokokawa H, Dokiya M |
647 - 652 |
Spectral Shifts of Electroluminescence from Porous N-Si Under Cathodic Bias Lim JE, Chae WS, Lee Y, Kim KJ |
652 - 657 |
The Prevention of Si Pitting in Hydrofluoric-Acid Cleaning by Additions of Hydrochloric-Acid Chung BC, Marshall GA, Pearce CW, Yanders KP |
658 - 663 |
Use of Sibn and Sibon Films Prepared by Plasma-Enhanced Chemical-Vapor-Deposition from Borazine as Interconnection Dielectrics Kane WF, Cohen SA, Hummel JP, Luther B, Beach DB |
664 - 669 |
Rapid Thermal-Process for Enhancement of Collimated Titanium Nitride Barriers Kim SD, Jin SG, Hong MR, Kim CT |
669 - 673 |
Importance of High-Energy Photons in the Curing of Spin-on Low Dielectric-Constant Interconnect Materials Sharangpani R, Cherukuri KC, Singh R |
674 - 678 |
Control of N-Type Dopant Transitions in Low-Temperature Silicon Epitaxy Kamins TI, Lefforge D |
679 - 682 |
Analysis of Silicon Surface in Connection with Its Unique Electrochemical and Etching Behavior Fukidome H, Ohno T, Matsumura M |
683 - 686 |
Field-Aided Thermal Chemical-Vapor-Deposition of Copper Using Cu(I) Organometallic Precursor Lee WJ, Rha SK, Lee SY, Park CO |
687 - 694 |
Cerium Concentration and Temperature-Dependence of the Luminescence of Srga2S4-Ce,Na, a Blue-Emitting Material for Electroluminescent and High-Current Density Cathodoluminescent Displays Ronotlimousin I, Garcia A, Fouassier C, Barthou C, Benalloul P, Benoit J |
694 - 697 |
Initial Growth-Processes in the Epitaxy of Ge and GeH4 on Oxidized Si Substrates Angermeier D, Kuhn WS, Druihle R, Ballutaud D, Triboulet R |
698 - 704 |
Quantitative Study of Charge-to-Breakdown of Thin Gate Oxide for a P(+)-Poly-Si Metal-Oxide-Semiconductor Capacitor Wang LS, Lin MS |
704 - 707 |
Thin-Film Energy-Controlled Variable Color Cathodoluminescent Screens Bondar VD, Grytsiv MY, Groodzinsky AS, Vasyliv MY, Chakhovskoi AG, Hunt CE, Malinowski ME, Felter TE |
708 - 717 |
Physical Models of Boron-Diffusion in Ultrathin Gate Oxides Fair RB |
717 - 720 |
Chemical Compatibility of (La0.6Ca0.4)(X)Fe(0.8)M(0.2)O(3) with Yttria-Stabilized Zirconia Kindermann L, Das D, Nickel H, Hilpert K, Appel CC, Poulson FW |
721 - 732 |
Radio-Frequency Diagnostics for Plasma Etch Systems Bushman S, Edgar TF, Trachtenberg I |
732 - 736 |
Photoreflectance Study of the Long-Term Stability of Various Surface Chemical Treatments on (001)N-GaAs Geisz JF, Safvi SA, Kuech TF |
736 - 742 |
Characterization of KtiOPO4 Thin-Films Grown by Spray-Pyrolysis Golego N, Cocivera M |
742 - 748 |
Organic Electroluminescence Device Based on an Electrodeposited Poly(3-Substituted Thiophene) Film Osaka T, Komaba S, Fujihana K, Okamoto N, Momma T, Kaneko N |
749 - 753 |
Trap Generation in Buried Oxides of Silicon-on-Insulator Structures by Vacuum-Ultraviolet Radiation Afanasev VV, Stesmans A, Revesz AG, Hughes HL |
753 - 758 |
Rapid Thermal-Processing of Semiconductor Wafers - An Optimized Approach Using Gas Conduction in the Molecular Regime Daviet JF |
758 - 764 |
Electrical Characterization of Highly Reliable 8 nm Oxide Ghidini G, Alessandri M, Clementi C, Drera D, Pellizzer F |
764 - 772 |
A Numerical Study of the Effects of Electromagnetic Stirring on the Distributions of Temperature and Oxygen Concentration in Silicon Double-Crucible Czochralski Processing Ono N, Trapaga G |
L15 - L17 |
Reexamination of Pressure and Speed Dependences of Removal Rate During Chemical-Mechanical Polishing Processes Tseng WT, Wang YL |
L17 - L19 |
Potentiometric Investigation of Silicon Electrode Immersed in Alkaline Hydrogen-Peroxide Solution Containing Trace-Level of Iron Chyan OM, Chen JJ, Chen LG, Xu F |
L20 - L22 |
Effect of Electrolyte-Composition on the Performance of Sodium/Polymer Cells Doeff MM, Ferry A, Ma YP, Ding L, Dejonghe LC |
L23 - L26 |
Membrane-Supported Nonvolatile Acidic Electrolytes Allow Higher Temperature Operation of Proton-Exchange Membrane Fuel-Cells Malhotra S, Datta R |
L27 - L28 |
Lipophilic Ionic Sites for Solvent Polymeric Membrane pH Electrodes Based on 4’,5’-Dibromofluorescein Octadecylester as Electrically Charged Carrier Mi YM, Bakker E |
L29 - L31 |
Analysis of GaAs Substrate Removal Etching with Citric Acid-H2O2 and Nh4Oh-H2O2 for Application to Compliant Substrates Cartercoman C, Bicknelltassius R, Benz RG, Brown AS, Jokerst NM |