1 - 9 |
Study on polymeric neutral species in high-density fluorocarbon plasmas Teii K, Hori M, Ito M, Goto T, Ishii N |
10 - 16 |
Precursor chemistry and film growth with (methylcyclopentadienyl) (1,5-cyclooctadiene)iridium Sun YM, Yan XM, Mettlach N, Endle JP, Kirsch PD, Ekerdt JG, Madhukar S, Hance RL, White JM |
17 - 22 |
Influence of second phases on the ferroelectric properties of SrBi2TaNbO9 thin films fabricated by radio-frequency magnetron sputtering Park YB, Jang SM, Lee JK, Park JW |
23 - 29 |
Ionization enhancement in ionized magnetron sputter deposition Joo J |
30 - 36 |
Structure, hardness, and tribological properties of reactive magnetron sputtered chromium nitride films He XM, Baker N, Kehler BA, Walter KC, Nastasi M, Nakamura Y |
37 - 41 |
Biased target deposition Zhurin VV, Kaufman HR, Kahn JR, Hylton TL |
42 - 47 |
Defect formation upon reactive direct-current magnetron sputtering of GeO2 films Njoroge W, Lange T, Weis H, Kohnen B, Wuttig M |
48 - 50 |
Low-temperature deposition of Si thin layer by gas-source molecular beam epitaxy Ohtsuka K, Murai A, Oizumi T, Yoshida T, Kurabayashi T, Suto K, Nishizawa J |
51 - 57 |
Direct low-temperature chemical vapor deposition of fully crystalline micro- and polycrystalline silicon thin films on SiO2 using plasma immersion ion implantation Shin JH, Huh H |
58 - 62 |
Monitoring plasma impedance match characteristics in a multipole inductively coupled plasma for process control Kim B, Lee C |
63 - 67 |
Multisource plasma chemical vapor deposition for synthesis of SiNx-SiOy and SiNx-SiCy composite films Nonogaki R, Yamada S, Wada T |
68 - 73 |
Amorphous hydrogenated carbon film formation from benzene by electron cyclotron resonance chemical vapor deposition Chen XH, Ning ZY, Hess DW, Tolbert LM |
74 - 78 |
Automated electron cyclotron resonance plasma enhanced chemical vapor deposition system for the growth of rugate filters Swart PL, Lacquet BM, Chtcherbakov AA, Bulkin PV |
79 - 82 |
Low-temperature growth of epitaxial LaNiO3/Pb(Zr0.52Ti0.48)O-3/LaNiO3 on Si(001) by pulsed-laser deposition Wu WB, Wong KH, Choy CL |
83 - 86 |
Stoichiometric indium oxide thin films prepared by pulsed laser deposition in pure inert background gas Yamada Y, Suzuki N, Makino T, Yoshida T |
87 - 93 |
Preparation and stability of low temperature cobalt and nickel silicides on thin polysilicon films Howell RS, Sarcona G, Saha SK, Hatalis MK |
94 - 98 |
Chemical vapor deposition of pyrolytic boron nitride from borazine Demin VN, Asanov IP, Akkerman ZL |
99 - 107 |
Cathodic plasma polymerization and treatment by anode magnetron torch. I. The influence of operating parameters on anode magnetron torch glow discharge Zhao JG, Yasuda HK |
108 - 114 |
Expanding microwave plasma for steel carburizing: Role of the plasma impinging species on the steel surface reactivity Jauberteau I, Cinelli MJ, Cahoreau M, Jauberteau JL, Aubreton J |
115 - 120 |
Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si(001) Erlebacher J, Aziz MJ, Chason E, Sinclair MB, Floro JA |
121 - 130 |
Microstructural evolution during tempering of arc-evaporated Cr-N coatings Almer J, Oden M, Hultman L, Hakansson G |
131 - 136 |
Influence of Mg on the corrosion of Al Baer DR, Windisch CF, Engelhard MH, Danielson MJ, Jones RH, Vetrano JS |
137 - 142 |
Alternating ion bombardment technique for wall surface control in depositive plasma processing Nakamura K, Ohwaki M, Yoneda S, Sugai H |
143 - 148 |
Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy Luo JS, Lin WT, Chang CY, Shih PS, Pan FM |
149 - 157 |
Defect-permeation correlation for ultrathin transparent barrier coatings on polymers Sobrinho ASD, Czeremuszkin G, Latreche M, Wertheimer MR |
158 - 165 |
High aspect ratio SiO2 etching with high resist selectivity improved by addition of organosilane to tetrafluoroethyl trifluoromethyl ether Chinzei Y, Feurprier Y, Ozawa M, Kikuchi T, Horioka K, Ichiki T, Horiike Y |
166 - 175 |
Consideration of local shadowing and ion beam voltage effects in the prediction of a surface evolving under ion milling Klein EJ, Ramirez WF |
176 - 180 |
Influence of electron shading on highly selective SiO2 to Si etching Yonekura K, Katayama T, Maruyama T, Fujiwara N, Miyatake H |
181 - 187 |
Dry etching of platinum films with TiN masks in an Ar/O-2 helicon wave plasma Chiang MC, Pan FM, Cheng HC, Liu JS, Chan SH, Wei TC |
188 - 196 |
Feature evolution during plasma etching. II. Polycrystalline silicon etching Lane JM, Klemens FP, Bogart KHA, Malyshev MV, Lee JTC |
197 - 206 |
Mask charging and profile evolution during chlorine plasma etching of silicon Bogart KHA, Klemens FP, Malyshev MV, Colonell JI, Donnelly VM, Lee JTC, Lane JM |
207 - 212 |
Defect analysis of Cl-2/HBr/He/O-2 etching process by imaging time-of-flight secondary ion mass spectrometry Zhao J, Reich DF, Nguyen TT, Zhao L, Hossain TZ |
213 - 231 |
Plasma abatement of perfluorocompounds in inductively coupled plasma reactors Xu XD, Rauf S, Kushner MJ |
232 - 236 |
Using a quartz crystal microbalance for low energy ion beam etching studies Doemling MF, Lin B, Rueger NR, Oehrlein GS, Haring RA, Lee YH |
237 - 243 |
Detailed simulation of mass spectra for quadrupole mass spectrometer systems Gibson JR, Taylor S, Leck JH |
244 - 247 |
Vacuum gauge self-compensating external environment in the SPring-8 storage ring Saeki H, Momose T |
248 - 256 |
X-ray photoelectron spectroscopy studies of novel Pi-conjugated ethynyl thiophene containing Pd(II) complexes and of their interaction with chromium Iucci G, Polzonetti G, Altamura P, Paolucci G, Goldoni A, Russo MV |
257 - 260 |
Measuring the electrical characteristics of thin polymeric films Gladys M, Greig P, Dastoor P |
261 - 267 |
Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy Zhu QS, Nagai H, Kawaguchi Y, Hiramatsu K, Sawaki N |
268 - 272 |
Long term stability of dry etched magnetoresistive random access memory elements Jung KB, Marburger J, Sharifi F, Park YD, Lambers ES, Pearton SJ |
273 - 277 |
Analysis of alkali elements in insulators using a CAMECA IMS-6f McKinley JM, Stevie FA, Granger CN, Renard D |
278 - 284 |
Comparative study of a-C : H films for inertial confinement fusion prepared with various hydrocarbon precursors by radio frequency-plasma enhanced chemical vapor deposition Theobald M, Durand J, Baclet P, Legaie O |
285 - 287 |
Plasma-assisted reduction of carbon dioxide in the gas phase Maya L |
288 - 289 |
Influence of lubricating conditions of fixing bolts on penetration of ConFlat (R) flange knife edge into gasket Kurokouchi S |
290 - 292 |
Cryogenic substrate cooling or substrate heating without vacuum feedthroughs Smith WF, Stokes BG, Crawford JF |
293 - 293 |
Epitaxial growth of ZnY ferrite films by pulsed laser deposition (vol 17, pg 3111, 1999) Kim H, Horwitz JS, Pique A, Newman HS, Lubitz P, Miller MM, Knies DL, Chrisey DB |