1 - 8 |
Surface science with nanosized particles in a carrier gas Keller A, Fierz M, Siegmann K, Siegmann HC, Filippov A |
9 - 16 |
Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Effect of plasma modes and process parameters Raveh A, Brewer J, Irene EA |
17 - 24 |
Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Layer structure and composition Raveh A, Brewer J, Irene EA |
25 - 30 |
Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas Kastenmeier BEE, Matsuo PJ, Oehrlein GS, Ellefson RE, Frees LC |
31 - 37 |
In situ characterization of residues formed on a plasma-etching chamber Kawada H, Yamane M, Kitsunai H, Suzuki S |
38 - 40 |
Remote-plasma-enhanced reaction between a silicon surface and trifluoro-acetyl-fluoride gas Saito Y, Yamazaki H, Mouri S |
41 - 44 |
Electrical conduction studies of plasma enhanced chemical vapor deposited silicon nitride films Bose M, Basa DK, Bose DN |
45 - 55 |
Absolute intensities of the vacuum ultraviolet spectra in oxide etch plasma processing discharges Woodworth JR, Riley ME, Arnatucci VA, Hamilton TW, Aragon BP |
56 - 61 |
Effects of ozone assisted deposition on the dielectric properties of 90 degrees off-axis radio frequency magnetron sputtered SrTiO3 Gibbons BJ, Fan Y, Findikoglu AT, Jia QX, Reagor DW |
62 - 65 |
Thin film growth of reactive sputter deposited tungsten-carbon thin films Rack PD, Peterson JJ, Li J, Geiculescu AC, Rack HJ |
66 - 75 |
Plasma etching endpoint detection using multiple wavelengths for small open-area wafers Yue HH, Qin SJ, Wiseman J, Toprac A |
76 - 86 |
Wave propagation and power deposition in magnetically enhanced inductively coupled and helicon plasma sources Kinder RL, Kushner MJ |
87 - 89 |
Technology and realization of metallic curved waveguide mirrors in polymer film waveguides based on anisotropic plasma etching Wolff S, Grosse A, Schimper HJ, Giehl AR, Kuhnke M, Grote R, Fouckhardt H |
90 - 96 |
Predeposition ultraviolet treatment for adhesion improvement of thin films on mercury cadmium telluride Butcher KSA, Tansley TL, Prince K, Leech PW |
97 - 100 |
Quartz-crystal microbalance study for characterizing atomic oxygen in plasma ash tools Srivastava AK, Sakthivel P |
101 - 107 |
Quantification of a radical beam source for methyl radicals Schwarz-Selinger T, Dose V, Jacob W, von Keudell A |
108 - 117 |
Theoretical and experimental characterization of a low-pressure rf plasma and its optimization in electron-gas secondary-neutral mass spectrometry Bieck W, Merz E, Gnaser H, Oechsner H |
118 - 123 |
Doped CHx microshells prepared by radio frequency plasma enhanced chemical vapor deposition for inertial confinement fusion experiments Theobald M, Baclet P, Legaie O, Durand J |
124 - 129 |
Crystallization of nanostructured silicon films deposited under a low-pressure argon-silane pulsed-glow discharge: Correlation with the plasma duration Hadjadj A, Beorchia A, Boufendi L, Huet S, Cabarrocas PRI |
130 - 135 |
Fracture resistance enhancement of diamond-like carbon/nitrogenated diamond-like carbon multilayer deposited by electron cyclotron resonance microwave plasma chemical vapor deposition Qi J, Lai KH, Bello I, Lee CS, Lee ST, Luo JB, Wen SZ |
136 - 144 |
Chemical stability of Sin+ species in SiOx (x < 2) thin films Barranco A, Mejias JA, Espinos JP, Caballero A, Gonzalez-Elipe AR, Yubero F |
145 - 152 |
Effects of electron-beam irradiation on the properties of CN thin films deposited by direct dual ion beams Kim YH, Lee DY, Kim IK, Baik HK |
153 - 157 |
Fundamental study of ion-irradiation effects on the columnar growth of chromium films prepared by ion-beam and vapor deposition Kuratani N, Ebe A, Ogata K, Shimizu I, Setsuhara Y, Miyake S |
158 - 166 |
Observations of the microscopic growth mechanism of pillars and helices formed by glancing-angle thin-film deposition Malac M, Egerton RF |
167 - 170 |
Influence of sputtering pressure on physical structure of AIN thin films prepared on Y-128 degrees LiNbO3 by rf magnetron sputtering Wu L, Wu S, Song HT |
171 - 174 |
Influence of deposition conditions on the thermal stability of ZnO : Al films grown by rf magnetron sputtering Haug FJ, Geller ZS, Zogg H, Tiwari AN, Vignali C |
175 - 181 |
Atomistic simulation of fluorocarbon deposition on Si by continuous bombardment with energetic CF+ and CF2+ Abrams CF, Graves DB |
182 - 191 |
Synchrotron x-ray diffraction and transmission electron microscopy studies of interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers Chun JS, Carlsson JRA, Desjardins P, Bergstrom DB, Petrov I, Greene JE, Lavoie C, Cabral C, Hultman L |
192 - 199 |
Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface Cho MH, Ko DH, Choi YG, Jeong K, Lyo IW, Noh DY, Kim HJ, Whang CN |
200 - 206 |
Thickness dependence of Y2O3 films grown on an oxidized Si surface Cho MH, Ko DH, Choi YK, Lyo IW, Jeong K, Whang CN, Kim HJ, Noh DY |
207 - 214 |
Interfacial chemistry of the Ba/SiOxNy/Si(100) nanostructure Kirsch PD, Ekerdt JG |
215 - 222 |
Anomalies in kinetics of hydrogen evolution from austenitic stainless steel from 300 to 1000 degrees C Nemanic V, Zajec B, Setina J |
223 - 227 |
Intrinsic stress of Co35Pd65 alloy films Jen SU, Chung CM |
228 - 231 |
Thin-walled vacuum chambers of austenitic stainless steel Moore BC |
232 - 239 |
Microstructure and secondary phases in coevaporated CuInS2 films: Dependence on growth temperature and chemical composition Alvarez-Garcia J, Perez-Rodriguez A, Romano-Rodriguez A, Morante JR, Calvo-Barrio L, Scheer R, Klenk R |
240 - 245 |
Hydrogenation characteristics and observation of disintegration conditions of Ti-Mo and Ni-coated Ti-Mo thin films Shi LQ, Zhou ZY, Zhao GQ, He MH |
246 - 250 |
Structural characterization of polycrystalline Cd-Te-In films Zapata-Torres M, Castro-Rodriguez R, Martel A, Mascarenhas YP, Guevara J, Melendez-Lira M, Pena JL |
251 - 261 |
Efficient modeling of thin film deposition for low sticking using a three-dimensional microstructural simulator Smy T, Dew SK, Joshi RV |
262 - 266 |
Hydrocarbon thin films produced from adamantane-diamond surface deposition: Molecular dynamics simulations Plaisted TA, Sinnott SB |
267 - 274 |
Effects of chemical etching with nitric acid on glass surfaces Jang HK, Chung YD, Whangbo SW, Kim TG, Whang CN, Lee SJ, Lee S |
275 - 279 |
Electron-beam-assisted evaporation of epitaxial CeO2 thin films on Si substrates Inoue T, Yamamoto Y, Satoh M |
280 - 286 |
GaN grown on two-step cleaned C-terminated 6H-SiC by molecular-beam epitaxy Guan ZP, Cai AL, Porter H, Cabalu J, Chen J, Huang S, Giedd RE |
287 - 291 |
Model of crystal lattice strained along the preferential direction by anisotropic stress for GaAs heteroepitaxial films grown on vicinal Si(001) and Si(110) substrates by molecular-beam epitaxy Yodo T |
292 - 294 |
In situ determination of growth rate by pyrometric interferometry during molecular-beam epitaxy: Application to the growth of AlGaN/GaN quantum wells Ng HM, Chu SNG, Cho AY |
295 - 298 |
Enhancement of tribological properties of 9Cr18 stainless steel by dual Mo and SCo implantation Zhang T, Song JH, Li GQ, Chu PK, Brown IG |
299 - 305 |
Preparation of AlN films by pulsed laser deposition using sintered aluminum nitride and elemental aluminum as raw materials Wu JD, Sun J, Ying ZF, Shi W, Ling H, Li FM, Zhou ZY, Wang KL, Ding XM |
306 - 310 |
Structural properties of CdS-doped glass nanocrystallites grown by pulsed laser deposition in high vacuum Wang H, Zhu Y, Ong PP |
311 - 316 |
Effect of chamber pressure and atmosphere on the microstructure and nanomechanical properties of amorphous carbon films prepared by pulsed laser deposition Wei Q, Sankar J, Sharma AK, Yamagata Y, Narayan J |
317 - 324 |
Measurements of viscosity, velocity slip coefficients, and tangential momentum accommodation coefficients using a modified spinning rotor gauge Bentz JA, Tompson RV, Loyalka SK |
325 - 328 |
Heat dissipation in thin-film vacuum sensor Berlicki TM |
329 - 344 |
Transient analysis of carrier gas saturation in liquid source vapor generators Mayer B, Collins CC, Walton M |
345 - 348 |
Process and fabrication of a lead zirconate titanate thin film pressure sensor Zakar E, Dubey M, Piekarski B, Conrad J, Piekarz R, Widuta R |
349 - 352 |
Vacuum gauge system with a self-compensator for photoelectrons produced in the SPring-8 storage ring Saeki H, Aoki T, Yonehara H, Momose T |
353 - 357 |
Thermal micropressure sensor for pressure monitoring in a minute package Wang SN, Mizuno K, Fujiyoshi M, Funabashi H, Sakata J |
358 - 364 |
Modeling a microfluidic system using Knudsen's empirical equation for flow in the transition regime Robertson JK, Wise KD |
365 - 371 |
True and measured outgassing rates of a vacuum chamber with a reversibly adsorbed phase Akaishi K, Nakasuga M, Funato Y |
372 - 375 |
Calculated energetics for adsorption and desorption steps during etching of Si(110) surface by Cl Halicioglu T |
376 - 378 |
Analysis of Langmuir probe data: Analytical parametrization, and the importance of the end effect Narasimhan G, Steinbruchel C |
379 - 382 |
Enhanced coercivity by substrate bias configuration in Co-based alloy thin film Jin D, Wang JP, Gong H |
383 - 385 |
Molecular beam epitaxy system at an undergraduate institution Celinski Z |
386 - 387 |
All-metal ultrahigh vacuum optical fiber feedthrough Miller DL, Moshegov NT |
388 - 388 |
Evolution of integrated-circuit vacuum processes: 1959-1975 (vol 18, pg 1736, 2000) Waits RK |