1 - 6 |
Titanium atom densities in reactive rf magnetron sputtering for TiO2 deposition Nakamura T, Okimura K |
7 - 13 |
Theoretical study of Cr diffusion in Co-Cr alloy thin film recording media Jin D, Wang JP, Gong H |
14 - 23 |
Model for an inductively coupled Ar/c-C4F8 plasma discharge Rauf S, Ventzek PLG |
24 - 29 |
Generation of a capacitively coupled microplasma and its application to the inner-wall modification of a poly(ethylene terephthalate) capillary Yoshiki H, Oki A, Ogawa H, Horiike Y |
30 - 32 |
Deposition of silicon nitride films by pulsed laser ablation of the Si target in nitrogen gas Umezu I, Kohno K, Yamaguchi T, Sugimura A, Inada M |
33 - 36 |
Reduction of residual gas in a sputtering system by auxiliary sputter of rare-earth metal Li DJ |
37 - 42 |
Parametrization of optical properties of indium-tin-oxide thin films by spectroscopic ellipsometry: Substrate interfacial reactivity Losurdo M, Giangregorio M, Capezzuto P, Bruno G, De Rosa R, Roca F, Summonte C, Pla J, Rizzoli R |
43 - 52 |
Effect of chamber wall conditions on Cl and Cl-2 concentrations in an inductively coupled plasma reactor Ullal SJ, Godfrey AR, Edelberg E, Braly L, Vahedi V, Aydil ES |
53 - 59 |
Morphological transitions of Si1-xGex films growing on Si(100). I. Gas-source molecular-beam epitaxy: From two-dimensional growth to growth in the Stranski-Krastanov mode Akazawa H |
60 - 67 |
Morphological transition of Si1-xGex films growing on Si(100). II. Synchrotron-radiation-excited chemical-vapor deposition: From two-dimensional growth to growth in the Volmer-Weber mode Akazawa H |
68 - 75 |
Combined effect of electrode gap and radio frequency on power deposition and film growth kinetics in SiH4/H-2 discharges Amanatides E, Mataras D, Rapakoulias DE |
76 - 83 |
Oxidation of deuterium-, acetylene-, and ethylene-terminated Si(100) by atomic oxygen Litorja M, Buntin SA |
84 - 86 |
Encapsulation materials for SrRuO3 to avoid H-2 anneal-induced decomposition Lin J, Tsunoda K, Eguchi K, Heida K, Matsunaga D |
87 - 92 |
Plasma-enhanced chemical-vapor deposition of titanium aluminum carbonitride/amorphous-carbon nanocomposite thin films Shieh J, Hon MH |
93 - 101 |
Electron stimulated carbon adsorption in ultrahigh vacuum monitored by Auger electron spectroscopy Scheuerlein C, Taborelli M |
102 - 106 |
Optical properties of magnesium fluoride thin films produced by argon ion-beam assisted deposition Dumas L, Quesnel E, Pierre F, Bertin F |
107 - 111 |
Effects of photoassisted O-2 annealing on the properties of (Ba,Sr)TiO3 thin films Chang SJ, Lee JS, Wei MC, Chen JF, Liu CH |
112 - 116 |
Investigation of Pt/Ti bilayer on SiNx/Si substrates for thermal sensor applications Giani A, Mailly F, Pascal-Delannoy F, Foucaran A, Boyer A |
117 - 124 |
Analysis of SiO2-to-Si3N4 selectivity in reactive ion etching using additional O-2 gas Matsui M, Uchida F, Kojima M, Tokunaga T, Yano F, Hasegawa M |
125 - 131 |
Substrate temperature studies of SrBi2(Ta1-xNbx)(2)O-9 grown by pulsed laser ablation deposition Tay ST, Huan CHA, Wee ATS, Liu R, Goh WC, Ong CK, Chen GS |
132 - 137 |
Plasma etching of cesium iodide Yang X, Hopwood J, Tipnis S, Nagarkar V, Gaysinskiy V |
138 - 145 |
Retention of neon in graphite after ion beam implantation or exposures to the scrape-off layer plasma in the TEXTOR tokamak Kim YM, Philipps V, Rubel M |
146 - 152 |
Modeling SiC etching in C2F6/O-2 inductively coupled plasma using neural networks Kim B, Kong SM, Lee BT |
153 - 159 |
Experimental study of the influence of nanoparticle generation on the electrical characteristics of argon-silane capacitive radio-frequency plasmas Shen Z, Kortshagen U |
160 - 164 |
Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition Tian XB, Fu RKY, Chu PK |
165 - 169 |
Ordering and surface state reduction of GaAs (100) by low energy S+ bombardment Zhao Q, Kwok RWM, Lau WM |
170 - 173 |
Electron temperatures of inductively coupled Cl-2-Ar plasmas Fuller NCM, Donnelly VM, Herman IP |
174 - 179 |
Ti diffusion in ion prebombarded MgO(100). I. A model for quantitative analysis Lu M, Lupu C, Styve VJ, Lee SM, Rabalais JW |
180 - 188 |
Ti diffusion in ion prebombarded MgO(100). II. Effects of the irradiation spectrum Lu M, Lupu C, Lee SM, Rabalais JW |
189 - 193 |
Comparison of fiber optics and standard nickel catalytic probes for determination of neutral oxygen atoms concentration Poberaj I, Mozetic M, Babic D |
194 - 197 |
Characteristics of plasma enhanced chemical vapor deposited W-B-N thin films Kim DJ, Sim HS, Kim SI, Kim YT, Jeon H |
198 - 201 |
Ultraviolet-assisted pulsed laser deposition of La0.7Ca0.3MnO3 thin films with improved oxygen content, crystallinity and magnetoresistive properties Kumar D, Pietambaram SV, Craciun V, Singh RK, Perriere J, Sankar J |
202 - 205 |
Diamond nucleation enhancement on reconstructed Si(100) Van Chiem C, Kim JH, Shin HS, Seo JM |
206 - 213 |
Dependence of ion beam induced nitrogen diffusion in aluminum on oxygen impurities Manova D, Huber P, Sienz S, Gerlach JW, Mandl S, Rauschenbach B |
214 - 224 |
Performance analysis and optimization considerations for a Knudsen compressor in transitional flow Muntz EP, Sone Y, Aoki K, Vargo S, Young M |
225 - 229 |
Chlorine dissociation fraction in an inductively coupled plasma measured by ultraviolet absorption spectroscopy Neuilly F, Booth JP, Vallier L |
230 - 233 |
Density changes upon crystallization of Ge2Sb2.04Te4.74 films Njoroge WK, Woltgens HW, Wuttig M |
234 - 238 |
Growth of ultrathin cobalt films on Fe(001) studied by reflection high-energy electron diffraction and x-ray diffraction Blomqvist P, Wappling R |
239 - 244 |
Interactions of H2O with SrTiO3(100) surfaces Wang LQ, Ferris KF, Herman GS |
245 - 250 |
Plasma treatment of polycarbonate for improved adhesion Hofrichter A, Bulkin P, Drevillon B |
251 - 264 |
Optical emission characteristics and mode transitions in low-frequency inductively coupled plasmas Ostrikov KN, Xu S, Azam ABMS |
265 - 269 |
Growth of high quality ZnO thin films at low temperature on Si(100) substrates by plasma enhanced chemical vapor deposition Li BS, Liu YC, Shen DZ, Lu YM, Zhang JY, Kong XG, Fan XW, Zhi ZZ |
270 - 277 |
Optical diagnostics of radio-frequency plasmas containing CHF3 and CHF3/O-2: Laser-induced fluorescence of CF2, CF, and O atoms, and optical emission from H, F, and O Hancock G, Sucksmith JP |
278 - 284 |
XPS instrument coupled with ALCVD reactor for investigation of film growth Sterner J, Kessler J, Stolt L |
285 - 287 |
Simple design for the transportation of ex situ prepared hydrogen passivated silicon MacLaren DA, Curson NJ, Atkinson P, Holst B, Johnson DJ, Allison W |
288 - 290 |
Molybdenum-doped indium oxide transparent conductive thin films Meng Y, Yang XL, Chen HX, Shen J, Jiang YM, Zhang ZJ, Hua ZY |
291 - 293 |
Sample transfer system with longer displacement than the maximum stroke of the manipulator Cho SH, Chun MH, Zhu YC, Zhang J, Lee JK, Seo JM |