화학공학소재연구정보센터

Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.20, No.1 Entire volume, number list
ISSN: 0734-2101 (Print) 

In this Issue (47 articles)

1 - 6 Titanium atom densities in reactive rf magnetron sputtering for TiO2 deposition
Nakamura T, Okimura K
7 - 13 Theoretical study of Cr diffusion in Co-Cr alloy thin film recording media
Jin D, Wang JP, Gong H
14 - 23 Model for an inductively coupled Ar/c-C4F8 plasma discharge
Rauf S, Ventzek PLG
24 - 29 Generation of a capacitively coupled microplasma and its application to the inner-wall modification of a poly(ethylene terephthalate) capillary
Yoshiki H, Oki A, Ogawa H, Horiike Y
30 - 32 Deposition of silicon nitride films by pulsed laser ablation of the Si target in nitrogen gas
Umezu I, Kohno K, Yamaguchi T, Sugimura A, Inada M
33 - 36 Reduction of residual gas in a sputtering system by auxiliary sputter of rare-earth metal
Li DJ
37 - 42 Parametrization of optical properties of indium-tin-oxide thin films by spectroscopic ellipsometry: Substrate interfacial reactivity
Losurdo M, Giangregorio M, Capezzuto P, Bruno G, De Rosa R, Roca F, Summonte C, Pla J, Rizzoli R
43 - 52 Effect of chamber wall conditions on Cl and Cl-2 concentrations in an inductively coupled plasma reactor
Ullal SJ, Godfrey AR, Edelberg E, Braly L, Vahedi V, Aydil ES
53 - 59 Morphological transitions of Si1-xGex films growing on Si(100). I. Gas-source molecular-beam epitaxy: From two-dimensional growth to growth in the Stranski-Krastanov mode
Akazawa H
60 - 67 Morphological transition of Si1-xGex films growing on Si(100). II. Synchrotron-radiation-excited chemical-vapor deposition: From two-dimensional growth to growth in the Volmer-Weber mode
Akazawa H
68 - 75 Combined effect of electrode gap and radio frequency on power deposition and film growth kinetics in SiH4/H-2 discharges
Amanatides E, Mataras D, Rapakoulias DE
76 - 83 Oxidation of deuterium-, acetylene-, and ethylene-terminated Si(100) by atomic oxygen
Litorja M, Buntin SA
84 - 86 Encapsulation materials for SrRuO3 to avoid H-2 anneal-induced decomposition
Lin J, Tsunoda K, Eguchi K, Heida K, Matsunaga D
87 - 92 Plasma-enhanced chemical-vapor deposition of titanium aluminum carbonitride/amorphous-carbon nanocomposite thin films
Shieh J, Hon MH
93 - 101 Electron stimulated carbon adsorption in ultrahigh vacuum monitored by Auger electron spectroscopy
Scheuerlein C, Taborelli M
102 - 106 Optical properties of magnesium fluoride thin films produced by argon ion-beam assisted deposition
Dumas L, Quesnel E, Pierre F, Bertin F
107 - 111 Effects of photoassisted O-2 annealing on the properties of (Ba,Sr)TiO3 thin films
Chang SJ, Lee JS, Wei MC, Chen JF, Liu CH
112 - 116 Investigation of Pt/Ti bilayer on SiNx/Si substrates for thermal sensor applications
Giani A, Mailly F, Pascal-Delannoy F, Foucaran A, Boyer A
117 - 124 Analysis of SiO2-to-Si3N4 selectivity in reactive ion etching using additional O-2 gas
Matsui M, Uchida F, Kojima M, Tokunaga T, Yano F, Hasegawa M
125 - 131 Substrate temperature studies of SrBi2(Ta1-xNbx)(2)O-9 grown by pulsed laser ablation deposition
Tay ST, Huan CHA, Wee ATS, Liu R, Goh WC, Ong CK, Chen GS
132 - 137 Plasma etching of cesium iodide
Yang X, Hopwood J, Tipnis S, Nagarkar V, Gaysinskiy V
138 - 145 Retention of neon in graphite after ion beam implantation or exposures to the scrape-off layer plasma in the TEXTOR tokamak
Kim YM, Philipps V, Rubel M
146 - 152 Modeling SiC etching in C2F6/O-2 inductively coupled plasma using neural networks
Kim B, Kong SM, Lee BT
153 - 159 Experimental study of the influence of nanoparticle generation on the electrical characteristics of argon-silane capacitive radio-frequency plasmas
Shen Z, Kortshagen U
160 - 164 Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition
Tian XB, Fu RKY, Chu PK
165 - 169 Ordering and surface state reduction of GaAs (100) by low energy S+ bombardment
Zhao Q, Kwok RWM, Lau WM
170 - 173 Electron temperatures of inductively coupled Cl-2-Ar plasmas
Fuller NCM, Donnelly VM, Herman IP
174 - 179 Ti diffusion in ion prebombarded MgO(100). I. A model for quantitative analysis
Lu M, Lupu C, Styve VJ, Lee SM, Rabalais JW
180 - 188 Ti diffusion in ion prebombarded MgO(100). II. Effects of the irradiation spectrum
Lu M, Lupu C, Lee SM, Rabalais JW
189 - 193 Comparison of fiber optics and standard nickel catalytic probes for determination of neutral oxygen atoms concentration
Poberaj I, Mozetic M, Babic D
194 - 197 Characteristics of plasma enhanced chemical vapor deposited W-B-N thin films
Kim DJ, Sim HS, Kim SI, Kim YT, Jeon H
198 - 201 Ultraviolet-assisted pulsed laser deposition of La0.7Ca0.3MnO3 thin films with improved oxygen content, crystallinity and magnetoresistive properties
Kumar D, Pietambaram SV, Craciun V, Singh RK, Perriere J, Sankar J
202 - 205 Diamond nucleation enhancement on reconstructed Si(100)
Van Chiem C, Kim JH, Shin HS, Seo JM
206 - 213 Dependence of ion beam induced nitrogen diffusion in aluminum on oxygen impurities
Manova D, Huber P, Sienz S, Gerlach JW, Mandl S, Rauschenbach B
214 - 224 Performance analysis and optimization considerations for a Knudsen compressor in transitional flow
Muntz EP, Sone Y, Aoki K, Vargo S, Young M
225 - 229 Chlorine dissociation fraction in an inductively coupled plasma measured by ultraviolet absorption spectroscopy
Neuilly F, Booth JP, Vallier L
230 - 233 Density changes upon crystallization of Ge2Sb2.04Te4.74 films
Njoroge WK, Woltgens HW, Wuttig M
234 - 238 Growth of ultrathin cobalt films on Fe(001) studied by reflection high-energy electron diffraction and x-ray diffraction
Blomqvist P, Wappling R
239 - 244 Interactions of H2O with SrTiO3(100) surfaces
Wang LQ, Ferris KF, Herman GS
245 - 250 Plasma treatment of polycarbonate for improved adhesion
Hofrichter A, Bulkin P, Drevillon B
251 - 264 Optical emission characteristics and mode transitions in low-frequency inductively coupled plasmas
Ostrikov KN, Xu S, Azam ABMS
265 - 269 Growth of high quality ZnO thin films at low temperature on Si(100) substrates by plasma enhanced chemical vapor deposition
Li BS, Liu YC, Shen DZ, Lu YM, Zhang JY, Kong XG, Fan XW, Zhi ZZ
270 - 277 Optical diagnostics of radio-frequency plasmas containing CHF3 and CHF3/O-2: Laser-induced fluorescence of CF2, CF, and O atoms, and optical emission from H, F, and O
Hancock G, Sucksmith JP
278 - 284 XPS instrument coupled with ALCVD reactor for investigation of film growth
Sterner J, Kessler J, Stolt L
285 - 287 Simple design for the transportation of ex situ prepared hydrogen passivated silicon
MacLaren DA, Curson NJ, Atkinson P, Holst B, Johnson DJ, Allison W
288 - 290 Molybdenum-doped indium oxide transparent conductive thin films
Meng Y, Yang XL, Chen HX, Shen J, Jiang YM, Zhang ZJ, Hua ZY
291 - 293 Sample transfer system with longer displacement than the maximum stroke of the manipulator
Cho SH, Chun MH, Zhu YC, Zhang J, Lee JK, Seo JM