Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.22, No.1 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (33 articles)

1 - 7	Poly(ethylene terephthalate) decomposition process in oxygen plasma ; emission spectroscopic and surface analysis for oxygen-plasma reaction Kumagai H, Hiroki D, Fujii N, Kobayashi T
8 - 12	Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor Kim JY, Seo S, Kim DY, Jeon H, Kim Y
13 - 19	Amorphous fluorocarbon polymer (a-C : F) films obtained by plasma enhanced chemical vapor deposition from perfluoro-octane (C8F18) vapor I: Deposition, morphology, structural and chemical properties Biloiu C, Biloiu IA, Sakai Y, Suda Y, Ohta A
20 - 29	Influence of negative ion resputtering on ZnO : Al thin films Rieth LW, Holloway PH
30 - 35	Effect of the substrate bias voltage on the physical characteristics of copper films deposited by microwave plasma-assisted sputtering technique Thiery F, Pauleau Y, Ortega L
36 - 38	Simple method of gas flow ratio optimization in high rate deposition of SiO2 by electron cyclotron resonance plasma enhanced chemical vapor deposition Daineka D, Bulkin P, Girard G, Drevillon B
39 - 45	Performance of inductively coupled plasma assisted sputtering with internal coil for ferromagnetic CoCrTa film deposition Okimura K, Oyanagi J
46 - 48	Orientation selective epitaxial growth of CeO2(100) and CeO2(110) layers on Si(100) substrates Inoue T, Sakamoto N, Ohashi M, Shida S, Horikawa A, Sampei Y
49 - 52	Contrast differences between scanning ion and scanning electron microscope images Suzuki T, Endo N, Shibata M, Kamasaki S, Ichinokawa T
53 - 60	Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide Standaert TEFM, Hedlund C, Joseph EA, Oehrlein GS, Dalton TJ
61 - 70	Temperature-resolved Fourier transform infrared study of condensation reactions and porogen decomposition in hybrid organosilicon-porogen films Burkey DD, Gleason KK
71 - 81	Measurement of absolute radical densities in a plasma using modulated-beam line-of-sight threshold ionization mass spectrometry Agarwal S, Quax GWW, van de Sanden MCM, Maroudas D, Aydil ES
82 - 87	Correlation between density and oxidation temperature for pyrolytic-gas passivated ultrathin silicon oxide films Yamada H
88 - 95	Plasma etching of high dielectric constant materials on silicon in halogen chemistries Sha L, Chang JP
96 - 106	Plasma diagnostic study of silicon nitride film growth in a remote Ar-H-2-N2-SiH4 plasma: Role of N and SiHn radicals Kessels WMM, van Assche FJH, Hong J, Schram DC, van de Sanden MCM
107 - 110	Effect of temperature on the growth of ultrathin films of p-sexiphenyl on KCI(001) Kintzel EJ, Smilgies DM, Skofronick JG, Safron SA, Van Winkle DH
111 - 116	Influence of substrate misorientation on vibrational properties of In1-x-yGaxAlyAs grown on InP Tripathy S, Thwin-Htoo, Chua SJ
117 - 121	Microstructure of alpha-alumina thin films deposited at low temperatures on chromia template layers Andersson JM, Czigany Z, Jin P, Helmersson U
122 - 128	Evolution of surface roughness during metal silicides phase transformation Pang CH, Hing P, Zhao FF, See A, Chong YF, Lee PS
129 - 134	ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics Yoon G, Yim M, Kim D, Linh M, Chai DK
135 - 139	Magnetic domain structures in ultrathin FexNi(1-x) films on Cu(111): Dependence on film thickness and stoichiometry Sato Y, Johnson TF, Chiang S, Giacomo JA, Zhu XD, Land DP, Nolting F, Scholl A
140 - 145	Effects of substrates and heat treatment on growing behavior and luminescent characteristics of ZnGa2O4 : Mn thin film Chung SM, Kim YJ
146 - 150	Crystallographic structure and composition of vanadium nitride films deposited by direct sputtering of a compound target Liao MY, Gotoh Y, Tsuji H, Ishikawa J
151 - 157	Growth of chemical vapor deposition aluminum titanate films at different CO2/H-2 and aluminum butoxide inputs Kuo DH, Shueh CN
158 - 164	Surface chemical changes of aluminum during NF3-based plasma processing used for in situ chamber cleaning Li X, Hua XF, Ling L, Oehrlein GS, Karwacki E, Ji B
165 - 169	Atomic transport and stability during annealing of HfO2 and HfAlO with an ultrathin layer of SiO2 on Si(001) Chang HS, Hwang H, Cho MH, Kim HK, Moon DW
170 - 175	Characteristics and anticoagulation behavior of polyethylene terephthalate modified by C2H2 plasma immersion ion implantation-deposition Wang J, Pan CJ, Kwok SCH, Yang P, Chen JY, Wan GJ, Huang N, Chu PK
176 - 180	Chemical states and band offsets of NH3-treated Si oxynitride films studied by high-resolution photoelectron spectroscopy Oshima M, Toyoda S, Okabayashi J, Kumigashira H, Ono K, Niwa M, Usuda K, Hirashita N
181 - 191	Extremely low-outgassing material: 0.2% beryllium copper alloy Watanabe F
192 - 200	Determination of titanium temperature and density in a magnetron vapor sputtering device assisted by two microwave coaxial excitation systems Leroy O, de Poucques L, Boisse-Laporte C, Ganciu M, Teule-Gay L, Touzeau M
201 - 213	Mechanisms of SiO2 film deposition from tetramethylcyclotetrasiloxane, dimethyldimethoxysilane, and trimethylsilane plasmas Zhang JM, Wavhal DS, Fisher ER
214 - 220	Growth and stress evolution of hafnium nitride films sputtered from a compound target Liao MY, Gotoh Y, Tsuji H, Ishikawa J
221 - 224	Ion doses for low-energy ion-assist applications Kaufman HR, Harper JME