269 - 273 |
Oriented Film Growth, Not Epitaxy in HTSC Film Growth Roy R, Guo R, Bhalla AS, Cross LE |
274 - 277 |
Improved Substrate-Temperature Control for Growth of Twin-Free Cadmium Mercury Telluride by Molecular-Beam Epitaxy Skauli T, Colin T, Lovold S |
278 - 281 |
Low-Temperature Growth of ZnTe by Synchroton Radiation Using Metalorganic Sources Ikejiri M, Ogata T, Ogawa H, Nishio M, Yoshida A |
282 - 288 |
Magnesium Cluster-Beam Deposition on Glass and Si(111) Hagena OF, Knop G, Fromknecht R, Linker G |
289 - 294 |
Ion-Beam-Assisted Growth of Beta-Fesi2 Terrasi A, Ravesi S, Grimaldi MG, Spinella C |
295 - 299 |
Photoresponse Probe of the Space-Charge Distribution in Ferroelectric Lead-Zirconate-Titanate Thin-Film Memory Capacitors Thakoor S, Maserjian J |
300 - 307 |
Electron-Cyclotron-Resonance Plasma Source for Metalorganic Chemical-Vapor-Deposition of Silicon-Oxide Films Popov OA, Shapoval SY, Yoder MD, Chumakov AA |
308 - 313 |
Fluorinated Diamond-Like Carbon-Films Deposits from Radiofrequency Glow-Discharge in a Triode Reactor Dagostino R, Lamendola R, Favia P, Giquel A |
314 - 320 |
Influence of an External Axial Magnetic-Field on the Plasma Characteristics and Deposition Conditions During Direct-Current Planar Magnetron Sputtering Ivanov I, Kazansky P, Hultman L, Petrov I, Sundgren JE |
321 - 322 |
Deposition of Aluminum-Oxide Films with High Refractive-Index Shih KK, Dove DB |
323 - 332 |
Fluorocarbon High-Density Plasmas .1. Fluorocarbon Film Deposition and Etching Using CF4 and Chf3 Oehrlein GS, Zhang Y, Vender D, Haverlag M |
333 - 344 |
Fluorocarbon High-Density Plasmas .2. Silicon Dioxide and Silicon Etching Using CF4 and Chf3 Oehrlein GS, Zhang Y, Vender D, Joubert O |
345 - 353 |
Study on Electromagnetron for Plasma Polymerization .2. Magnetic-Field Enhanced Radio-Frequency Plasma Deposition of Organogermanium Films from Tetraethylgermanium Gazicki M, Schalko J, Olcaytug F, Ebel M, Ebel H, Wernisch J, Yasuda H |
354 - 364 |
Redeposition Kinetics in Fluorocarbon Plasma-Etching Gray DC, Mohindra V, Sawin HH |
365 - 368 |
Plasma Fluorination of Graphite Merfeld GD, Petrich MA |
369 - 378 |
Cleaning of Metal Parts in Oxygen Radio-Frequency Plasma - Process Study Korzec D, Rapp J, Theirich D, Engemann J |
379 - 383 |
Synchrotron-Radiation Excited Etching of SiC Film Using Reactive Species Generated by a Microwave-Discharge Terakado SG, Ogura M, Suzuki S, Tanaka K |
384 - 387 |
Elimination of Serious Artifacts in Temperature-Programmed Desorption Spectroscopy Lu GQ, Linsebigler AL, Yates JT |
388 - 392 |
Effects of Processing on Electrical-Properties of YBa2Cu3O7 Films .2. In-Situ Deposition Processes Sheats JR, Newman N, Taber RC, Merchant P |
393 - 398 |
Thermally-Induced Changes in TeOx Thin-Layers Podolesheva I, Platikanova V, Konstantinov I, Rosler M |
399 - 404 |
Acceleration of High-Current Heavy-Ions Using a Variable-Energy Radiofrequency Quadrupole LINAC and Measurement of the Input Beam Emittance Amemiya K, Tokiguchi K, Hakamata Y, Yamada S, Hirao Y, Tokuda N |
405 - 410 |
Correction of Dead-Time Effects in Time-of-Flight Mass-Spectrometry Stephan T, Zehnpfenning J, Benninghoven A |
411 - 417 |
Study of the Structure of the Rh Ag Surface Using Positron-Annihilation Induced Auger-Electron Spectroscopy Yang G, Yang S, Kim JH, Lee KH, Koymen AR, Mulhollan GA, Weiss AH |
418 - 422 |
Photoemission-Study of the Growth of the LaF3 Si (111) Interface Malten C, Cramm S, Colbow KM, Eberhardt W |
423 - 427 |
Altered Layer as Sensitive Initial Chemical-State Indicator Dementjev AP, Ivanova OP, Vasilyev LA, Naumkin AV, Nemirovsky DM, Shalaev DY |
428 - 435 |
Angular-Distributions of Auger Electrons from Surfaces - Conclusions from Full Multiple-Scattering Simulations Chen X, Harp GR, Saldin DK |
436 - 442 |
Auger in-Depth Profiling of Mo-Si Multilayers Konkol A, Sulyok A, Menyhard M, Barna A |
443 - 451 |
Structural and Surface Characterization of Ultrafine Iron Carbide Particles Generated by Laser Pyrolysis .1. High-Temperature He Treatment Sethuraman AR, Stencel JM, Rubel AM, Cavin B, Hubbard CR |
452 - 456 |
Improved Quantification in Secondary-Ion Mass-Spectrometry Detecting Mcs+ Molecular-Ions Gnaser H |
457 - 464 |
Measurement of Complete Auger-Electron Emission Angular-Distributions from Beta-SiC Films on Si(100) Chyan OM, Frank DG, Hubbard AT, Li JP, Steckl AJ |
465 - 470 |
Infrared Spectroscopic Study of Initial-Stages of Ultraviolet Ozone Oxidation of Si(100) and Si(111) Surfaces Niwano M, Kageyama J, Kinashi K, Miyamoto N, Honma K |
471 - 475 |
Approximate Method for Reducing the Effect of Beam Misalignment on Low-Energy-Electron Diffraction I(E) Curves at the Normal Incidence - The Horizontal-Beam Method Mizuno S, Tochihara H, Kawamura T |
476 - 483 |
Structure and Properties of Titanium Nitride Thin-Films Deposited at Low-Temperatures Using Direct-Current Magnetron Sputtering Elstner F, Ehrlich A, Giegengack H, Kupfer H, Richter F |
484 - 493 |
CO2-Laser Chemical-Vapor-Deposition of Silica Films in a Parallel Configuration - A Study of Gas-Phase Phenomena Fernandez D, Gonzalez P, Pou J, Garcia E, Serra J, Leon B, Perezamor M, Garrido C |
494 - 500 |
Composition and Growth Mode of Mosx Sputtered Films Moser J, Levy F, Bussy F |
501 - 505 |
Preparation of Inplane Textured Y2O3-Doped ZrO2 Thin-Film on Polycrystalline Metallic Tape by Modified Bias Sputtering Aoki S, Fukutomi M, Komori K, Maeda H |
506 - 508 |
Properties of Titanium Layers Deposited by Collimation Sputtering Hara T, Nomura T, Mosley RC, Suzuki H, Sone K |
509 - 512 |
Interaction of Al with Oxidized Ge/Si(001) - A Synchrotron-Radiation Photoelectron-Spectroscopy Study Prabhakaran K, Ogino T, Scimeca T, Oshima M |
513 - 522 |
X-Ray Photoelectron-Spectroscopy Investigation of Interfacial Interactions in the Cr Bpda-PDA and Ti Bpda-PDA Systems Chenite A, Selmani A, Yelon A |
523 - 528 |
Application of Dynamic in-Situ Ellipsometry to the Deposition of Tin-Doped Indium Oxide-Films by Reactive Direct-Current Magnetron Sputtering Fukarek W, Kersten H |
529 - 532 |
Electrical-Properties of Radio-Frequency Magnetron-Sputtered (BASR)TiO3 Thin-Films on Indium Tin Oxide-Coated Glass Substrate Kim TS, Kim CH, Oh MH |
533 - 535 |
In-Situ Deposition of YBa2Cu3O7-X Superconducting Thin-Film Without High-Pressure Oxygen During Film-Cooling Song WD, Liu DM, Jiao SL, Lu DS, An CW, Lu L, Yang HQ, Li ZG |
536 - 541 |
Measurement of the Angular-Distribution of Sputtered Neutrals in a Planar Magnetron Geometry Eisenmengersittner C, Bergauer A, Bangert H, Bauer W |
542 - 547 |
Electron Source Brightness and Degeneracy from Fresnel Fringes in-Field Emission Point Projection Microscopy Spence JC, Qian W, Silverman MP |
548 - 553 |
Tritium Purification via Zirconium Manganese Iron Alloy Getter St 909 in Flow Processes Baker JD, Meikrantz DH, Pawelko RJ, Anderl RA, Tuggle DG |
554 - 563 |
Vacuum Pumpdown Model for Long Outgassing Tubes Ernst MJ, Hemond HF |
564 - 567 |
Using Characterized Variable Reservoir Helium Permeation Leaks to Generate Low Flows Tison SA, Mohan P |
568 - 573 |
Nonstable Behavior of Widely Used Ionization Gauges Arnold PC, Borichevsky SC |
574 - 579 |
Causes of Nonstability and Nonreproducibility in Widely Used Bayard-Alpert Ionization Gauges Bills DG |
580 - 586 |
Stable and Reproducible Bayard-Alpert Ionization Gauge Arnold PC, Bills DG, Borenstein MD, Borichevsky SC |
587 - 590 |
Charging Effects in Measurements of High-Temperature Superconductors with High-Resolution Electron-Energy-Loss Spectroscopy Akavoor P, Phelps RB, Kesmodel LL |
591 - 593 |
Compact and Inexpensive Quartz Capillaritron Source Bautsch M, Varadinek P, Wege S, Niedrig H |
594 - 597 |
Effect of Anode Bias on the Index of Refraction of Al2O3 Thin-Films Deposited by DC S-Gun Magnetron Reactive Sputtering Clarke PJ |
598 - 600 |
Miniature Multitarget Sputtering System for the in-Situ X-Ray Study of High-Tc Multilayer Film Growth Williams SM, Yang HQ, Ketterson JB |
601 - 602 |
Plasma-Treated Screws for Ultrahigh-Vacuum Application Macgill RA, Castro RA, Yao XY, Brown IG |
603 - 603 |
Langmuir Probe Diagnostics of a Radio-Frequency Magnetron Discharge for Deposition of High-Tc YBCO Films (Vol 11, Pg 2747, 1993) Mishra SK, Sarkar A, Ray SK, Pathak LC, Bhattacharya D, Chopra KL, Das SR |