Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.20, No.2 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (44 articles)

295 - 298	Effects of temperature on electronic properties of nickel phthalocyanine thin sandwich film structures Anthopoulos TD, Shafai TS
299 - 304	Infrared spectroscopic study of dimethylaluminum-hydride adsorption on oxidized, hydrogen-terminated, and reconstructed Si surfaces Wadayama T, Takeuchi K, Mukai K, Tanabe T, Hatta A
305 - 312	Solid particle production in fluorocarbon plasmas II: Gas phase reactions for polymerization Takahashi K, Tachibana K
313 - 324	Two-dimensional modeling of long-term transients in inductively coupled plasmas using moderate computational parallelism. I. Ar pulsed plasmas Subramonium P, Kushner MJ
325 - 334	Two-dimensional modeling of long-term transients in inductively coupled plasmas using moderate computational parallelism. II. Ar/Cl-2 pulsed plasmas Subramonium P, Kushner MJ
335 - 337	Synthesis and mechanical properties of boron suboxide thin films Music D, Schneider JM, Kugler V, Nakao S, Jin P, Ostblom M, Hultman L, Helmersson U
338 - 343	Deposition of silicon alloys in an integrated distributed electron cyclotron resonance reactor: Oxide, nitride, oxinitrides, and multilayer structures Bulkin P, Hofrichter A, Heitz T, Huc J, Drevillon B, Benattar JJ
344 - 349	Influence of implantation and annealing on the surface topography of amorphous and polysilicon thin films Edrei R, Shauly EN, Hoffman A
350 - 355	Metallization of poly(vinylchloride) by Fe, Ni, Cu, Ag, and Au Carlo SR, Perry C, Torres J, Fairbrother DH
356 - 361	Effect of O-2 gas partial pressure on mechanical properties of SiO2 films deposited by radio frequency magnetron sputtering Fujiyama H, Sumomogi T, Endo T
362 - 365	Depth distribution and diffusion behavior of implanted Bi+ ions into KTiOPO4 Wang KM, Hu H, Lu F, Chen F, Zhang JH, Liu XD, Liu JT, Liu YG
366 - 374	Atomic force microscopy investigation of a-C : H films prepared by plasma enhanced chemical vapor deposition for inertial confinement fusion experiments Dumay B, Finot E, Theobald M, Legaie O, Baclet P, Durand J, Goudonnet JP
375 - 378	Effect of annealing on structural and electrical properties of laser ablated Sr0.8Ba0.2Bi2Ta2O9 thin films Das RR, Bhattacharya P, Perez W, Katiyar RS
379 - 387	Ionized physical vapor deposition of titanium nitride: Plasma and film characterization Mao D, Tao K, Hopwood J
388 - 393	Self-cleaning and antifogging effects of TiO2 films prepared by radio frequency magnetron sputtering Zeman P, Takabayashi S
394 - 397	Sulfur passivation of InP(100) by means of low energy sulfur ions Zhao Q, Kwok RWM
398 - 402	Cyclic plasma deposition Of SiO2 films at low temperature (80 degrees C) with intermediate plasma treatment Yi C, Rhee SW
403 - 407	Intermittent chemical vapor deposition of thick electrically conductive diamond-like amorphous carbon films using i-C4H10/N-2 supermagnetron plasma Kinoshita H, Murakami T
408 - 412	Enhancement of the film growth rate by promoting iodine adsorption in the catalyst-enhanced chemical vapor deposition of Cu Kwon OK, Lee HB, Kang SW, Park HS
413 - 423	Particle formation during low-pressure chemical vapor deposition from silane and oxygen: Measurement, modeling, and film properties Kim T, Suh SM, Girshick SL, Zachariah MR, McMurry PH, Rassel RM, Shen Z, Campbell SA
424 - 429	Surface roughness of silicon carbide etched in a C2F6/O-2 inductively coupled plasma Kim B, Choi HJ, Lee BT
430 - 436	Room-temperature fabrication of hard AIN/TiN superlattice coatings by pulsed laser deposition Pankov V, Evstigneev M, Prince RH
437 - 440	High coercivity thin film for high-density magneto-optical super-resolution near-field recording Kim J, Shima T, Atoda N, Tominaga J
441 - 446	Polishing effect of the plasma on the growth of YBa2Cu3O7-delta films by radio frequency sputtering Chou H, Lin PI, Hsu CC, Chow TC, Hong MT, Chen YC, Liu JR
447 - 455	Stability of the inelastic mean free paths determined by elastic peak electron spectroscopy in nickel and silicon Jiricek P, Zemek J, Lejcek P, Lesiak B, Jablonski A, Ceransky M
456 - 458	Effect of buffer-layer engineering on the polarity of GaN films Sumiya M, Yoshimura K, Ogusu N, Fuke S, Mizuno K, Yoshimoto M, Koinuma H, Romano LT
459 - 466	Gas heating and throw distance for the sputter deposition of aluminum and tungsten Drusedau TP
467 - 478	Two-dimensional pulsed-plasma simulation of a chlorine discharge Ramamurthi B, Economou DJ
479 - 485	Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon Chen GS, Guo JJ, Lin CK, Hsu CS, Yang LC, Fang JS
486 - 491	CaWO4 thin films synthesized by pulsed laser deposition Tanaka K, Fukui K, Ohga K, Choo CK
492 - 498	Comprehensive study of microcrystalline silicon solar cells deposited at high rate using 13.56 MHz plasma-enhanced chemical vapor deposition Roschek T, Repmann T, Muller J, Rech B, Wagner H
499 - 506	Deposition of silicon oxychloride films on chamber walls during Cl-2/O-2 plasma etching of Si Ullal SJ, Singh H, Vahedi V, Aydil ES
507 - 512	Chemical vapor deposition of HfO2 films on Si(100) Sayan S, Aravamudhan S, Busch BW, Schulte WH, Cosandey F, Wilk GD, Gustafsson T, Garfunkel E
513 - 520	High-density etching plasma excitation by slot type and coaxial line type of microwave antennas Yamauchi T, Sugai H
521 - 525	Cross section for removing chemisorbed oxygen from an aluminum target by sputtering Depla D, De Gryse R
526 - 529	Ion energy distribution functions and Langmuir probe measurements in low pressure argon discharges Kaeppelin V, Carrere M, Layet JM
530 - 535	Sputter-etching characteristics of barium-strontium-titanate and bismuth-strontium-tantalate using a surface-wave high-density plasma reactor Stafford L, Margot J, Delprat S, Chaker M, Queney D
536 - 543	Methods for modeling microwave plasma system stability Rummel P, Grotjohn TA
544 - 548	Improvement of oxide thickness uniformity by high then low O-2 pressure oxidation in rapid thermal processing Hong CC, Chen JL, Hwu JG
549 - 554	Growth and structure control of HfO2-x films with cubic and tetragonal structures obtained by ion beam assisted deposition Manory RR, Mori T, Shimizu I, Miyake S, Kimmel G
555 - 563	Determination of electron temperature, atomic fluorine concentration, and gas temperature in inductively coupled fluorocarbon/rare gas plasmas using optical emission spectroscopy Schabel MJ, Donnelly VM, Kornblit A, Tai WW
564 - 568	Study of angular influence of C3H5+ ion deposition on polystyrene surfaces using molecular dynamics simulations Jang I, Ni B, Sinnott SB
569 - 571	Microhardness and lattice parameter of Cr1-xAlxN films Kawate M, Kimura A, Suzuki T
572 - 576	Temperature programmer for surface science studies with application to semiconductor surfaces Materer NF, Watt T