227 - 235 |
Comparison of pulsed and downstream deposition of fluorocarbon materials from C3F8 and c-C4F8 plasmas Martin IT, Malkov GS, Butoi CI, Fisher ER |
236 - 244 |
Study of C4F8/CO and C4F8/Ar/CO plasmas for highly selective etching of organosilicate glass over Si3N4 and SiC Ling L, Hua X, Li X, Oehrlein GS, Celii FG, Kirmse KHR, Jiang P, Wang YC, Anderson HM |
245 - 249 |
Control of nitrogen depth profile in ultrathin oxynitride films formed by pulse-time-modulated nitrogen beams Samukawa S, Minemura Y, Fukuda S |
250 - 254 |
Preparation of TiN films by arc ion plating using dc and pulsed biases Huang MD, Lee YP, Dong C, Lin GQ, Sun C, Wen LS |
255 - 259 |
Some considerations on heater design for simultaneous deposition of large-area double-sided high-T-c superconducting thin films Chen JJ, Tao BW, Liu XZ, Li YR |
260 - 263 |
Plasma characteristics in pulsed direct current reactive magnetron sputtering of aluminum nitride thin films Lee JW, Cuomo JJ, Bourham M |
264 - 271 |
Reactive physical vapor deposition of TixAlyN: Integrated plasma-surface modeling characterization Zhang D, Schaeffer JK |
272 - 280 |
Zirconia-alumina nanolaminate for perforated pitting corrosion protection of stainless steel Gaertner WF, Hoppe EE, Omari MA, Sorbello RS, Aita CR |
281 - 286 |
Phase transformation of tungsten films deposited by diode and inductively coupled plasma magnetron sputtering Chen GS, Tian HS, Lin CK, Chen GS, Lee HY |
287 - 292 |
Characterization of graded InGaN/GaN epilayers grown on sapphire Song TL, Chua SJ, Fitzgerald EA, Chen P, Tripathy S |
293 - 301 |
Effects of voltage distribution along an induction coil and discharge frequency in inductively coupled plasmas Edamura M, Benck EC |
302 - 308 |
Electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition system with monitoring in situ for epitaxial growth of group-III nitrides Xu Y, Gu B, Qin FW |
309 - 320 |
Miniaturized vacuum gauges Wilfert S, Edelman C |
321 - 323 |
Effect of concurrent N-2(+) and N+ ion bombardment on the plasma-assisted deposition of carbon nitride thin film Cao ZX, Oechsner H |
324 - 327 |
Growth and characterization of cubic CdS epilayers on GaAs substrates Yu YM, Lee KS, O B, Yu PY, Kim CS, Choi YD, Yun HJ |
328 - 331 |
Easy method enhancing the sensitivity of a helium mass-spectrometer leak detector Firpo G, Pozzo A |
332 - 338 |
Preferred orientation and film structure of TaN films deposited by reactive magnetron sputtering Noda S, Tepsanongsuk K, Tsuji Y, Kajikawa Y, Ogawa Y, Komiyama H |
339 - 348 |
High temperature processing of TiO2 thin films for application in silicon solar cells Richards BS, Richards SR, Boreland MB, Jamieson DN |
349 - 355 |
Effect of deposition parameters on properties of ITO films prepared by reactive middle frequency pulsed dual magnetron sputtering Rogozin AI, Vinnichenko MV, Kolitsch A, Moller W |
356 - 360 |
Effects of mesh-assisted carbon plasma immersion ion implantation on the surface properties of insulating silicon carbide ceramics Fu RKY, Fu KL, Tian XB, Chu PK |
361 - 365 |
Thickness dependence of the properties of highly c-axis textured AlN thin films Martin F, Muralt P, Dubois MA, Pezous A |
366 - 370 |
Effect of ion beam energy on magnetic properties of CoCrPt and CoPt thin films Zhang JQ, Wang HF, Alex M, Miloslavsky L |
371 - 376 |
Electron beam fluorescence temperature measurements of N-2 in a semiconductor plasma reactor Shimada M, Cattolica R, Tynan GR |
377 - 382 |
Optical emission diagnostic of a pulsed arc discharge Restrepo E, Devia A |
383 - 394 |
Analytical modeling of rarefied Poiseuille flow in microchannels Sun YH, Chan WK |
395 - 400 |
Growth and characterization of hafnium silicate films prepared by UV/ozone oxidation Punchaipetch P, Pant G, Kim MJ, Wallace RM, Gnade BE |
401 - 406 |
Maximum entropy decomposition of quadrupole mass spectra Von Toussaint U, Dose V, Golan A |
407 - 412 |
Nonselective and smooth etching of GaN/AlGaN heterostructures by Cl-2/Ar/BCl3 inductively coupled plasmas Han YJ, Xue S, Wu T, Wu Z, Guo WP, Luo Y, Hao ZB, Sun CZ |
413 - 418 |
Chemical bonds of fluorocarbon films which can be a source of CFx radicals Takada N, Iida T, Shibagaki K, Sasaki K |
419 - 421 |
Fabrication of iron (III) oxide doped polystyrene shells Cai PJ, Tang YJ, Zhang L, Du K, Feng CG |
422 - 424 |
Fabrication of ferroelectric PbZrxTi1-xO3 thick films and their optical waveguide properties Hu GJ, Hu SH, Meng XJ, Wang GS, Zhao Q, Sun JL, Chu JH, Dai N, Xu L, Liu LY, Li DX |
425 - 432 |
Use of gas-phase ethanol to mitigate extreme UV/water oxidation of extreme UV optics Klebanoff LE, Malinowski ME, Clift WM, Steinhaus C, Grunow P |
433 - 436 |
Mitigation of accumulated electric charge by deposited fluorocarbon film during SiO2 etching Shimmura T, Suzuki Y, Soda S, Samukawa S, Koyanagi M, Hane K |
437 - 440 |
Trace moisture emissions from heated metal surfaces in hydrogen service Funke HH, Yao JL, Raynor MW |
441 - 441 |
Etch characteristics of CeO2 thin film in Ar/CF4/Cl-2 plasma (vol 21, pg 426, 2003) Kim DP, Chang YS, Kim CI |