Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.27, No.2 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (35 articles)

L1 - L7	Chemical and structural properties of atomic layer deposited La2O3 films capped with a thin Al2O3 layer Li XL, Tsoutsou D, Scarel G, Wiemer C, Capelli SC, Volkos SN, Lamagna L, Fanciulli M
167 - 173	Relatively low temperature synthesis of hexagonal tungsten carbide films by N doping and its effect on the preferred orientation, phase transition, and mechanical properties Su YD, Hu CQ, Wang C, Wen M, Zheng WT
174 - 182	Influence of the bias voltage on the structure and mechanical performance of nanoscale multilayer CrAlYN/CrN physical vapor deposition coatings Safran G, Reinhard C, Ehiasarian AP, Barna PB, Szekely L, Geszti O, Hovsepian PE
183 - 186	Thermal-mechanical modeling of nodular defect embedded within multilayer coatings Ling XL, Shao JD, Fan ZX
187 - 192	Photon emission during fracture of carbon materials Yasuda K, Yamamoto K, Shiota T, Matsuo Y
193 - 208	Chemistry in long residence time fluorocarbon plasmas Sant SP, Nelson CT, Overzet LJ, Goeckner MJ
209 - 216	Plasma etching of Hf-based high-k thin films. Part I. Effect of complex ions and radicals on the surface reactions Martin RM, Chang JP
217 - 223	Plasma etching of Hf-based high-k thin films. Part II. Ion-enhanced surface reaction mechanisms Martin RM, Blom HO, Chang JP
224 - 229	Plasma etching of Hf-based high-k thin films. Part III. Modeling the reaction mechanisms Martin RM, Chang JP
230 - 233	Growth modes in metal-organic molecular beam epitaxy of TiO2 on r-plane sapphire Jalan B, Engel-Herbert R, Cagnon J, Stemmer S
234 - 244	Correlation of chemical composition and electrical properties of rf sputtered alumina films Voigt M, Bergmaier A, Dollinger G, Sokolowski M
245 - 247	Energy scaling of the ion-induced desorption yield for perpendicular collisions of Ar and U with stainless steel in the energy range of 5 and 100 MeV/u Kollmus H, Kramer A, Bender M, Bellachioma MC, Reich-Sprenger H, Mahner E, Hedlun E, Westerberg L, Malyshev OB, Leandersson M, Edqvist E
248 - 252	Reaction of a hydrogen-terminated Si(100) surface in UHV with ion-pump generated radicals Zikovsky J, Dogel SA, Dickie AJ, Pitters JL, Wolkow RA
253 - 261	Practical expressions for the mean escape depth, the information depth, and the effective attenuation length in Auger-electron spectroscopy and x-ray photoelectron spectroscopy Jablonski A, Powell CJ
262 - 275	Investigation of InP etching mechanisms in a Cl-2/H-2 inductively coupled plasma by optical emission spectroscopy Gatilova L, Bouchoule S, Guilet S, Chabert P
276 - 281	Influence of vacuum annealing on the physical properties of ZnO/Al/ZnO multilayer coatings Al-Maghrabi MA, Al-Kuhaili MF, Durrani SMA, Bakhtiari IA
282 - 286	Effect of pulse frequency on the ion fluxes during pulsed dc magnetron sputtering Rahamathunnisa M, Cameron DC
287 - 294	Test particle simulation of the role of ballistic electrons in hybrid dc/rf capacitively coupled CF4 plasmas Ventzek PLG, Denpoh K
295 - 300	Elimination of pillar associated with micropipe of SiC in high-rate inductively coupled plasma etching Okamoto N
301 - 305	High etching rates of bulk Nb in Ar/Cl-2 microwave discharge Raskovic M, Popovic S, Upadhyay J, Vuskovic L, Phillips L, Valente-Feliciano AM
306 - 314	Hydrogen mediated transport of Sn to Ru film surface Faradzhev N, Sidorkin V
315 - 320	A molecular basis for the onset of turbulence Muriel A
321 - 327	Activation and measurement of nonevaporable getter films Malyshev OB, Middleman KJ, Colligon JS, Valizadeh R
328 - 335	Surface chemistry and surface electronic properties of ZnO single crystals and nanorods Uhlrich JJ, Olson DC, Hsu JWP, Kuech TF
336 - 341	Optimal design of antireflection coating and experimental verification by plasma enhanced chemical vapor deposition in small displays Yang SM, Hsieh YC, Jeng CA
342 - 351	The direct injection of liquid droplets into low pressure plasmas Ogawa D, Saraf I, Sra A, Timmons R, Goeckner M, Overzet L
352 - 355	Improved optical and electrical properties of rf sputtered Al doped ZnO films on polymer substrates by low-damage processes Min HS, Yang MK, Lee JK
356 - 361	Velocity distribution function of sputtered gallium atoms during inductively coupled argon plasma treatment of a GaAs surface Despiau-Pujo E, Chabert P, Ramos R, Cunge G, Sadeghi N
362 - 366	Oxygen incorporation and charge donor activation via subplantation during growth of indium tin oxide films Amassian A, Dudek M, Zabeida O, Gujrathi SC, Klemberg-Sapieha JE, Martinu L
367 - 375	Roughening during XeF2 etching of Si(100) through interface layers: H:Si(100) and a-Si/Si(100) Stevens AAE, van de Sanden MCM, Beijerinck HCW, Kessels WMM
376 - 380	Vacuum outgassing of high density polyethylene Dinh LN, Sze J, Schildbach MA, Chinn SC, Maxwell RS, Raboin P, McLean W
381 - 387	Carbonitriding of silicon using plasma focus device Jabbar S, Khan IA, Ahmad R, Zakaullah M, Pan JS
388 - 403	Mixing-layer kinetics model for plasma etching and the cellular realization in three-dimensional profile simulator Guo W, Bai B, Sawin HH
404 - 414	Gas jet assisted vapor deposition of yttria stabilized zirconia Hass DD, Wadley HNG
415 - 415	Profile evolution simulator for sputtering and ion-enhanced chemical etching (vol 27, pg 130, 2008) Saussac J, Margot J, Chaker M