화학공학소재연구정보센터

Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.17, No.3 Entire volume, number list
ISSN: 0734-2101 (Print) 

In this Issue (58 articles)

679 - 685 Breaking the Ga-CH3 bond at cryogenic temperatures using atomic hydrogen. Adsorbed trimethylgallium reactivity
Mawhinney DB, Glass JA, Yates JT
686 - 691 Effects of Ar dilution on the optical emission spectra of fluorocarbon ultrahigh-frequency plasmas: C4F8VSCF4
Nakano T, Samukawa S
692 - 697 Electron beam dissociation of CO and CO2 on ZnS thin films
Darici Y, Holloway PH, Sebastian J, Trottier T, Jones S, Rodriquez J
698 - 703 Evidence for germanium phosphide dots on Ge(001)
Bottomley DJ, Iwami M, Uehara Y, Ushioda S
704 - 712 Controller design issues in the feedback control of radio frequency plasma processing reactors
Rauf S, Kushner MJ
713 - 720 Study of the dc saddle-field discharge: Application to methane
Sagnes E, Szurmak J, Manage D, Zukotynski S
721 - 725 Langmuir probe measurements in a low pressure inductively coupled plasma used for diamond deposition
Okada K, Komatsu S, Matsumoto S
726 - 730 Plasma-enhanced metal organic chemical vapor deposition of high purity copper thin films using plasma reactor with the H atom source
Jin HJ, Shiratani M, Kawasaki T, Fukuzawa T, Kinoshita T, Watanabe Y, Kawasaki H, Toyofuku M
731 - 734 High rate deposition of diamond-like carbon films by sheet-like plasma chemical vapor deposition
Nonogaki R, Yamada S, Araki T, Wada T
735 - 740 Low-temperature plasma deposition of dielectric coatings from organosilicon precursors
Lin CT, Li F, Mantei TD
741 - 748 Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2
Standaert TEFM, Matsuo PJ, Allen SD, Oehrlein GS, Dalton TJ
749 - 754 Low damage reactive ion etching for photovoltaic applications
Schaefer S, Ludemann R
755 - 762 Silicon etch rate enhancement by traces of metal
Sebel PGM, Hermans LJF, Beijerinck HCW
763 - 767 Bias-assisted etching of polycrystalline diamond films in hydrogen, oxygen, and argon microwave plasmas
Zhang WJ, Sun C, Bello I, Lee CS, Lee ST
768 - 773 Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN
Hahn YB, Hays DC, Donovan SM, Abernathy CR, Han J, Shul RJ, Cho H, Jung KB, Pearton SJ
774 - 779 Degree of Cl-2 dissociation and etching characteristics in high-density plasmas
Samukawa S
780 - 792 Characterization of high density CH4/H-2/Ar plasmas for compound semiconductor etching
Eddy CR, Leonhardt D, Douglass SR, Shamamian VA, Thoms BD, Butler JE
793 - 798 Smoothing of polycrystalline Cu(ln,Ga)(Se,S)(2) thin films by low-energy ion-beam etching
Frost F, Lippold G, Otte K, Hirsch D, Schindler A, Bigl F
799 - 804 Platinum etching in Ar/Cl-2 plasmas with a photoresist mask
Shibano T, Nakamura K, Takenaga T, Ono K
805 - 809 Effect of nitric-phosphoric acid etches on material properties and back-contact formation of CdTe-based solar cells
Li XN, Niles DW, Hasoon FS, Matson RJ, Sheldon P
810 - 816 Adsorption and thermal decomposition of C2D5I on the (110) and (111) planes of NiAl: A temperature programmed deposition and x-ray photoelectron spectroscopy study
Chaturvedi S, Strongin DR
817 - 822 Ellipsometric investigation of nucleation sites for chemical vapor deposition of Si on SiO2 and Si3N4 surfaces
Basa C, Irene EA
823 - 831 Preparation and operation of hydrogen cleaned GaAs(100) negative electron affinity photocathodes
Elamrawi KA, Elsayed-Ali HE
832 - 839 Platinum complex/Zn-porphyrin macrosystem assemblies: Electronic structure and conformational investigation by x-ray photoelectron spectroscopy
Polzonetti G, Ferri A, Russo MV, Iucci G, Licoccia S, Paolesse R
840 - 844 Measurement of electron energy distribution function in an argon copper plasma for ionized physical vapor deposition
Lu ZC, Foster JE, Snodgrass TG, Booske JH, Wendt AE
845 - 852 Development of a triplasmatron ion source for the generation of SF5+ and F- primary ion beams on an ion microscope secondary ion mass spectrometry instrument
Gillen G, King RL, Chmara F
853 - 861 In situ x-ray photoelectron spectroscopy studies of interactions of evaporated metals with poly(p-phenylene vinylene) and its ring-substituted derivatives
Atreya M, Li S, Kang ET, Neoh KG, Ma ZH, Tan KL
862 - 870 Spectrophotometric analysis of aluminum nitride thin films
Joo HY, Kim HJ, Kim SJ, Kim SY
871 - 876 In situ substrate temperature measurements during radio frequency sputtering of ZnO thin film using fiber Bragg grating
Zayer NK, Henderson PJ, Grellier AJC, Pannell CN
877 - 883 Spectroellipsometric characterization of plasma-deposited Au fluoropolymer nanocomposite films
Dalacu D, Martinu L
884 - 890 Friction-reducing mechanisms of molybdenum dithiocarbamate zinc dithiophosphate combination: New insights in MoS2 genesis
Grossiord C, Martin JM, Le Mogne T, Inoue K, Igarashi J
891 - 894 Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition
Nesting DC, Kouvetakis J, Hearne S, Chason E, Tsong IST
895 - 898 Quantitative analysis of sputtered alpha- and alpha+beta-brass surfaces by using Auger electron spectroscopy with principal component analysis-target factor analysis
Hammer GE
899 - 908 Influence of substrate bias voltage on the properties of CNx films prepared by reactive magnetron sputtering
Hajek V, Rusnak K, Vlcek J, Martinu L, Gujrathi SC
909 - 916 Crystalline SiC thin films deposited at room temperature using pulsed laser ablation of graphite and magnetron sputtering of silicon
Nainaparampil JJ, Zabinski JS
917 - 920 High-quality LaNiO3 thin-film electrode grown by pulsed laser deposition
Guo XX, Li CL, Zhou YL, Chen ZH
921 - 925 Growth and structural properties of hydrogenated silicon films deposited by pulsed laser ablation
Trusso S, Vasi C, Neri F
926 - 935 Growth and structure of epitaxial CeO2 by oxygen-plasma-assisted molecular beam epitaxy
Kim YJ, Gao Y, Herman GS, Thevuthasan S, Jiang W, McCready DE, Chambers SA
936 - 938 Different effect of annealing temperature on resistivity for stoichiometric, W rich, and N rich tungsten nitride films
Lin J, Tsukune A, Suzuki T, Yamada M
939 - 944 Mass spectroscopy of recoiled ions, secondary ion mass spectroscopy, and Auger electron spectroscopy investigation of Y2O3-stabilized ZrO2(100) and (110)
Herman GS, Henderson MA, Starkweather KA, McDaniel EP
945 - 953 Control of the structure and properties of aluminum oxide coatings deposited by pulsed magnetron sputtering
Kelly PJ, Arnell RD
954 - 960 Effects of vacuum and inert gas annealing of ultrathin tantalum pentoxide films on Si(100)
Mao AY, Son KA, White JM, Kwong DL, Roberts DA, Vrtis RN
961 - 969 Epitaxial growth and characterization of Ce1-xZrxO2 thin films
Gao Y, Herman GS, Thevuthasan S, Peden CHF, Chambers SA
970 - 977 Modeling of silicon deposition process scale-up employing axisymmetric ring nozzle sources. I
Chen G, Boyd ID
978 - 985 Three dimensional modeling of silicon deposition process scale-up employing supersonic jets. II
Chen G, Boyd ID, Engstrom JR
986 - 992 Nanocrystalline WC and WC/a-C composite coatings produced from intersected plasma fluxes at low deposition temperatures
Voevodin AA, O'Neill JP, Prasad SV, Zabinski JS
993 - 1001 Behavior of thin Ta-based films in the Cu/barrier/Si system
Stavrev M, Fischer D, Praessler F, Wenzel C, Drescher K
1002 - 1017 Thermal outgassing of vacuum glazing
Lenzen M, Turner GM, Collins RE
1018 - 1023 Improvement of bonding strength between Au Ti and SiO2 films by Si layer insertion
Nagata H, Shinriki T, Shima K, Tamai M, Haga EM
1024 - 1030 Electronic structure and mechanical properties of resistant coatings: The chromium molybdenum nitride system
Hones P, Sanjines R, Levy F, Shojaei O
1031 - 1035 Hydrogen plasma pretreatment effect on the deposition of aluminum thin films from metalorganic chemical vapor deposition using dimethylethylamine alane
Jang TW, Rhee HS, Ahn BT
1036 - 1039 Optical and mechanical consequences of microstructural alteration of alpha platinum dioxide films
Maya L, Anovitz LM, Thundat T, Yust CS
1040 - 1046 Outgassing in thin wall stainless steel cells
Nemanic V, Setina J
1047 - 1052 Metastable deexcitation spectroscopy study of oxygen adsorption on a polycrystalline titanium surface
Kurahashi M, Yamauchi Y
1053 - 1058 Characterization of the Ti-doped diamond-like carbon coatings on a type 304 stainless steel
Hsieh WP, Wang DY, Shieu FS
1059 - 1065 Passivation of stainless steel by delta-Al2O3 films resistant to ozonized water
Yoshida M, Seki A, Shirai Y, Ohmi T
1066 - 1070 Particle measurements in vacuum tools by in situ particle monitor
Miyashita H, Kikuchi T, Kawasaki Y, Katakura Y, Ohsako N
1071 - 1074 Thermal relaxation of hot filaments
Durakiewicz T, Halas S