679 - 685 |
Breaking the Ga-CH3 bond at cryogenic temperatures using atomic hydrogen. Adsorbed trimethylgallium reactivity Mawhinney DB, Glass JA, Yates JT |
686 - 691 |
Effects of Ar dilution on the optical emission spectra of fluorocarbon ultrahigh-frequency plasmas: C4F8VSCF4 Nakano T, Samukawa S |
692 - 697 |
Electron beam dissociation of CO and CO2 on ZnS thin films Darici Y, Holloway PH, Sebastian J, Trottier T, Jones S, Rodriquez J |
698 - 703 |
Evidence for germanium phosphide dots on Ge(001) Bottomley DJ, Iwami M, Uehara Y, Ushioda S |
704 - 712 |
Controller design issues in the feedback control of radio frequency plasma processing reactors Rauf S, Kushner MJ |
713 - 720 |
Study of the dc saddle-field discharge: Application to methane Sagnes E, Szurmak J, Manage D, Zukotynski S |
721 - 725 |
Langmuir probe measurements in a low pressure inductively coupled plasma used for diamond deposition Okada K, Komatsu S, Matsumoto S |
726 - 730 |
Plasma-enhanced metal organic chemical vapor deposition of high purity copper thin films using plasma reactor with the H atom source Jin HJ, Shiratani M, Kawasaki T, Fukuzawa T, Kinoshita T, Watanabe Y, Kawasaki H, Toyofuku M |
731 - 734 |
High rate deposition of diamond-like carbon films by sheet-like plasma chemical vapor deposition Nonogaki R, Yamada S, Araki T, Wada T |
735 - 740 |
Low-temperature plasma deposition of dielectric coatings from organosilicon precursors Lin CT, Li F, Mantei TD |
741 - 748 |
Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2 Standaert TEFM, Matsuo PJ, Allen SD, Oehrlein GS, Dalton TJ |
749 - 754 |
Low damage reactive ion etching for photovoltaic applications Schaefer S, Ludemann R |
755 - 762 |
Silicon etch rate enhancement by traces of metal Sebel PGM, Hermans LJF, Beijerinck HCW |
763 - 767 |
Bias-assisted etching of polycrystalline diamond films in hydrogen, oxygen, and argon microwave plasmas Zhang WJ, Sun C, Bello I, Lee CS, Lee ST |
768 - 773 |
Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN Hahn YB, Hays DC, Donovan SM, Abernathy CR, Han J, Shul RJ, Cho H, Jung KB, Pearton SJ |
774 - 779 |
Degree of Cl-2 dissociation and etching characteristics in high-density plasmas Samukawa S |
780 - 792 |
Characterization of high density CH4/H-2/Ar plasmas for compound semiconductor etching Eddy CR, Leonhardt D, Douglass SR, Shamamian VA, Thoms BD, Butler JE |
793 - 798 |
Smoothing of polycrystalline Cu(ln,Ga)(Se,S)(2) thin films by low-energy ion-beam etching Frost F, Lippold G, Otte K, Hirsch D, Schindler A, Bigl F |
799 - 804 |
Platinum etching in Ar/Cl-2 plasmas with a photoresist mask Shibano T, Nakamura K, Takenaga T, Ono K |
805 - 809 |
Effect of nitric-phosphoric acid etches on material properties and back-contact formation of CdTe-based solar cells Li XN, Niles DW, Hasoon FS, Matson RJ, Sheldon P |
810 - 816 |
Adsorption and thermal decomposition of C2D5I on the (110) and (111) planes of NiAl: A temperature programmed deposition and x-ray photoelectron spectroscopy study Chaturvedi S, Strongin DR |
817 - 822 |
Ellipsometric investigation of nucleation sites for chemical vapor deposition of Si on SiO2 and Si3N4 surfaces Basa C, Irene EA |
823 - 831 |
Preparation and operation of hydrogen cleaned GaAs(100) negative electron affinity photocathodes Elamrawi KA, Elsayed-Ali HE |
832 - 839 |
Platinum complex/Zn-porphyrin macrosystem assemblies: Electronic structure and conformational investigation by x-ray photoelectron spectroscopy Polzonetti G, Ferri A, Russo MV, Iucci G, Licoccia S, Paolesse R |
840 - 844 |
Measurement of electron energy distribution function in an argon copper plasma for ionized physical vapor deposition Lu ZC, Foster JE, Snodgrass TG, Booske JH, Wendt AE |
845 - 852 |
Development of a triplasmatron ion source for the generation of SF5+ and F- primary ion beams on an ion microscope secondary ion mass spectrometry instrument Gillen G, King RL, Chmara F |
853 - 861 |
In situ x-ray photoelectron spectroscopy studies of interactions of evaporated metals with poly(p-phenylene vinylene) and its ring-substituted derivatives Atreya M, Li S, Kang ET, Neoh KG, Ma ZH, Tan KL |
862 - 870 |
Spectrophotometric analysis of aluminum nitride thin films Joo HY, Kim HJ, Kim SJ, Kim SY |
871 - 876 |
In situ substrate temperature measurements during radio frequency sputtering of ZnO thin film using fiber Bragg grating Zayer NK, Henderson PJ, Grellier AJC, Pannell CN |
877 - 883 |
Spectroellipsometric characterization of plasma-deposited Au fluoropolymer nanocomposite films Dalacu D, Martinu L |
884 - 890 |
Friction-reducing mechanisms of molybdenum dithiocarbamate zinc dithiophosphate combination: New insights in MoS2 genesis Grossiord C, Martin JM, Le Mogne T, Inoue K, Igarashi J |
891 - 894 |
Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition Nesting DC, Kouvetakis J, Hearne S, Chason E, Tsong IST |
895 - 898 |
Quantitative analysis of sputtered alpha- and alpha+beta-brass surfaces by using Auger electron spectroscopy with principal component analysis-target factor analysis Hammer GE |
899 - 908 |
Influence of substrate bias voltage on the properties of CNx films prepared by reactive magnetron sputtering Hajek V, Rusnak K, Vlcek J, Martinu L, Gujrathi SC |
909 - 916 |
Crystalline SiC thin films deposited at room temperature using pulsed laser ablation of graphite and magnetron sputtering of silicon Nainaparampil JJ, Zabinski JS |
917 - 920 |
High-quality LaNiO3 thin-film electrode grown by pulsed laser deposition Guo XX, Li CL, Zhou YL, Chen ZH |
921 - 925 |
Growth and structural properties of hydrogenated silicon films deposited by pulsed laser ablation Trusso S, Vasi C, Neri F |
926 - 935 |
Growth and structure of epitaxial CeO2 by oxygen-plasma-assisted molecular beam epitaxy Kim YJ, Gao Y, Herman GS, Thevuthasan S, Jiang W, McCready DE, Chambers SA |
936 - 938 |
Different effect of annealing temperature on resistivity for stoichiometric, W rich, and N rich tungsten nitride films Lin J, Tsukune A, Suzuki T, Yamada M |
939 - 944 |
Mass spectroscopy of recoiled ions, secondary ion mass spectroscopy, and Auger electron spectroscopy investigation of Y2O3-stabilized ZrO2(100) and (110) Herman GS, Henderson MA, Starkweather KA, McDaniel EP |
945 - 953 |
Control of the structure and properties of aluminum oxide coatings deposited by pulsed magnetron sputtering Kelly PJ, Arnell RD |
954 - 960 |
Effects of vacuum and inert gas annealing of ultrathin tantalum pentoxide films on Si(100) Mao AY, Son KA, White JM, Kwong DL, Roberts DA, Vrtis RN |
961 - 969 |
Epitaxial growth and characterization of Ce1-xZrxO2 thin films Gao Y, Herman GS, Thevuthasan S, Peden CHF, Chambers SA |
970 - 977 |
Modeling of silicon deposition process scale-up employing axisymmetric ring nozzle sources. I Chen G, Boyd ID |
978 - 985 |
Three dimensional modeling of silicon deposition process scale-up employing supersonic jets. II Chen G, Boyd ID, Engstrom JR |
986 - 992 |
Nanocrystalline WC and WC/a-C composite coatings produced from intersected plasma fluxes at low deposition temperatures Voevodin AA, O'Neill JP, Prasad SV, Zabinski JS |
993 - 1001 |
Behavior of thin Ta-based films in the Cu/barrier/Si system Stavrev M, Fischer D, Praessler F, Wenzel C, Drescher K |
1002 - 1017 |
Thermal outgassing of vacuum glazing Lenzen M, Turner GM, Collins RE |
1018 - 1023 |
Improvement of bonding strength between Au Ti and SiO2 films by Si layer insertion Nagata H, Shinriki T, Shima K, Tamai M, Haga EM |
1024 - 1030 |
Electronic structure and mechanical properties of resistant coatings: The chromium molybdenum nitride system Hones P, Sanjines R, Levy F, Shojaei O |
1031 - 1035 |
Hydrogen plasma pretreatment effect on the deposition of aluminum thin films from metalorganic chemical vapor deposition using dimethylethylamine alane Jang TW, Rhee HS, Ahn BT |
1036 - 1039 |
Optical and mechanical consequences of microstructural alteration of alpha platinum dioxide films Maya L, Anovitz LM, Thundat T, Yust CS |
1040 - 1046 |
Outgassing in thin wall stainless steel cells Nemanic V, Setina J |
1047 - 1052 |
Metastable deexcitation spectroscopy study of oxygen adsorption on a polycrystalline titanium surface Kurahashi M, Yamauchi Y |
1053 - 1058 |
Characterization of the Ti-doped diamond-like carbon coatings on a type 304 stainless steel Hsieh WP, Wang DY, Shieu FS |
1059 - 1065 |
Passivation of stainless steel by delta-Al2O3 films resistant to ozonized water Yoshida M, Seki A, Shirai Y, Ohmi T |
1066 - 1070 |
Particle measurements in vacuum tools by in situ particle monitor Miyashita H, Kikuchi T, Kawasaki Y, Katakura Y, Ohsako N |
1071 - 1074 |
Thermal relaxation of hot filaments Durakiewicz T, Halas S |