Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.20, No.3 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (108 articles)

579 - 582	Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC Theodoropoulou N, Hebard AF, Chu SNG, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG, Zavada JM, Park YD
583 - 588	Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111) Li TQ, Noda S, Tsuji Y, Ohsawa T, Komiyama H
589 - 596	Effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane-modified SiO2 substrates Hu M, Noda S, Tsuji Y, Okubo T, Yamaguchi Y, Komiyama H
597 - 604	Faraday cup detector array with electronic multiplexing for multichannel mass spectrometry Scheidemann AA, Darling RB, Schumacher FJ, Isakharov A
605 - 611	Formation and oxidation properties of (Ti1-xAlx)N thin films prepared by dc reactive sputtering Matsui Y, Hiratani M, Nakamura Y, Asano I, Yano F
612 - 615	In-situ measurement of magnetostrictive coefficient and elastic properties for thin films during growth Jin XS, Kim CO, Lee YP, Zhou Y
616 - 621	Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Quantification of nitrogen Ferrari S, Perego M, Fanciulli M
622 - 624	Preparation of high-pressure phase boron nitride films by physical vapor deposition Zhu PW, He Z, Zhao YN, Li DM, Liu HW, Zou GT
625 - 633	Diamondlike carbon deposition on plastic films by plasma source ion implantation Tanaka T, Yoshida M, Shinohara M, Takagi T
634 - 637	Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering Seino T, Sato T
638 - 642	Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing He KM, Hakovirta M, Peters AM, Taylor B, Nastasi M
643 - 650	Influence of standing-wave electric field pattern on the laser damage resistance of HfO2 thin films Protopapa ML, Alvisi M, De Tomasi F, Di Giulio M, Perrone MR, Scaglione S
651 - 660	Etching of organosilicate glass low-k dielectric films in halogen plasmas Vitale SA, Sawin HH
661 - 666	Influence of surface condition in Langmuir probe measurements Stamate E, Ohe K
667 - 673	Properties of combined TiN and Pt thin films applied to gas sensing Abom AE, Hultman L, Eriksson M, Twesten RD
674 - 677	Alternating stress field and superhardness effect in TiN/NbN superlattice films Li GY, Han ZH, Tian JW, Xu JH, Gu MY
678 - 682	Effect of ion bombardment and substrate orientation on structure and properties of titanium nitride films deposited by unbalanced magnetron sputtering Guruvenket S, Rao GM
683 - 687	A supersonic molecular beam for gas-surface interaction studies with synchrotron radiation Baraldi A, Rumiz L, Moretuzzo M, Barnaba M, Comelli G, Lizzit S, Paolucci G, Rosei R, de Mongeot FB, Valbusa U
688 - 692	High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry Chi PH, Simons DS, McKinley JM, Stevie FA, Granger CN
693 - 701	Oxygen plasma effects on optical properties of ZnSe films Yan L, Woollam JA, Franke E
702 - 706	Ellipsometric method for real time control of thin film deposition on imperfect substrates Hofrichter A, Heitz T, Bulkin P, Drevillon B
707 - 713	Transience of plasma surface modification as an adhesion promoter for polychlorotrifluorethylene Subrahmanyan S, Dillard JG, Love BJ, Romand M, Charbonnier M
714 - 720	Ion assistance effects on electron beam deposited MgF2 films Alvisi M, De Tomasi F, Della Patria A, Di Giulio M, Masetti E, Perrone MR, Protopapa ML, Tepore A
721 - 724	Characterization of high dose Mn, Fe, and Ni implantation into p-GaN Pearton SJ, Overberg ME, Thaler G, Abernathy CR, Theodoropoulou N, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Polyakov AY, Osinsky AV, Norris PE, Chow PP, Wowchack AM, Van Hove JM, Park YD
725 - 732	Amorphous boron coatings produced with vacuum arc deposition technology Klepper CC, Hazelton RC, Yadlowsky EJ, Carlson EP, Keitz MD, Williams JM, Zuhr RA, Poker DB
733 - 740	Interfacial mechanism studies of electroless plated Cu films on a-Ta : N layers catalyzed by PIII Lin JH, Lee TL, Hsieh WJ, Lin CC, Kou CS, Shih HC
741 - 743	Preferential orientation of short chain vapor deposited polyaniline thin films on gold Xu B, Choi JW, Dowben PA
744 - 747	Debris reduction for copper and diamond-like carbon thin films produced by magnetically guided pulsed laser deposition Tsui YY, Minami H, Vick D, Fedosejevs R
748 - 753	Deep in situ dry-etch monitoring of III-V multilayer structures using laser reflectometry and reflectivity modeling Moussa H, Daneau R, Meriadec C, Manin L, Sagnes I, Raj R
754 - 761	Stress changes in chemical vapor deposition tungsten silicide (polycide) film measured by x-ray diffraction Pelleg J, Elish E
762 - 765	Electron dynamics in unoccupied molecular orbitals of two blue-light-emitting organic electroluminescent materials Karlsson HS, Read K, Haight R
766 - 771	High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes Wuu DS, Horng RH, Huang SH, Chung CR
772 - 780	Structure and corrosion properties of PVD Cr-N coatings Liu C, Bi Q, Ziegele H, Leyland A, Matthews A
781 - 789	In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy Kessels WMM, Marra DC, van de Sanden MCM, Aydil ES
790 - 796	Morphology and electronic transport of polycrystalline silicon films deposited by SiF4/H-2 at a substrate temperature of 200 degrees C Hazra S, Mukhopadhyay S, Ray S
797 - 801	Electronic transport in perylenetetracarboxylic dianhydride: The role of In diffusion Hudej R, Bratina G
802 - 808	Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition Kim H, Rossnagel SM
809 - 813	Deposition of Ga2O3-x ultrathin films on GaAs by e-beam evaporation Oldham NC, Hill CJ, Garland CM, McGill TC
814 - 822	Gaseous mixture flow through a long tube at arbitrary Knudsen numbers Sharipov F, Kalempa D
823 - 828	Microstructure and mechanical properties of Zr-Si-N films prepared by rf-reactive sputtering Nose M, Chiou WA, Zhou M, Mae T, Meshii M
829 - 832	Vacuum system design for the 3 GeV-proton synchrotron of JAERI-KEK joint project Kinsho M, Nishizawa D, Saito Y, Suzuki H, Yokomizo H
833 - 838	Arc generation from sputtering plasma-dielectric inclusion interactions Wickersham CE, Poole JE, Fan JS
839 - 842	On the mechanism of self-deceleration of the thin oxide film growth Mukhambetov DG, Chalaya OV
843 - 847	The optical properties and applications of AIN thin films prepared by a helicon sputtering system Chiu WY, Wu CH, Kao HL, Jeng ES, Chen JS, Jaing CC
848 - 856	Simulation of hydrogen outgassing in ultrahigh vacuum chamber and fusion device by recombination limited model Akaishi K, Nakasuga M, Funato Y
857 - 860	Photon-stimulated desorption from an aluminum surface after water vapor exposure Chen JR, Yang KY, Yang JY, Hsiung GY
861 - 864	Dependence of electrical and optical properties of amorphous SiC : H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature Park MG, Choi WS, Hong B, Kim YT, Yoon DH
865 - 872	Annealing effects of aluminum silicate films grown on Si(100) Cho MH, Rho YS, Choi HJ, Nam SW, Ko KH, Ku JH, Kang HC, Noh Y, Whang CN, Jeong K
873 - 886	Ion energy distributions at rf-biased wafer surfaces Woodworth JR, Abraham IC, Riley ME, Miller PA, Hamilton TW, Aragon BP, Shul RJ, Willison CG
887 - 896	Early stages of interface reactions between AlN and Ti thin films Pinkas M, Frage N, Froumin N, Pelleg J, Dariel MP
897 - 899	Determination of atomic potential energy for Pd adatom diffusion across W (111) islands and surfaces Fu TY, Cheng LC, Tsong TT
900 - 905	Uniformity in large area ZnO : Al films prepared by reactive midfrequency magnetron sputtering Hong RJ, Jiang X, Sittinger V, Szyszka B, Hoing T, Brauer G, Heide G, Frischat GH
906 - 910	Direct simulation of rarefied gas flows in rotating spiral channels Heo JS, Hwang YK
911 - 918	Interface between poly (9,9-dioctylfluorene) and alkali metals: cesium, potassium, sodium, and lithium Fung MK, Lai SL, Bao SN, Lee CS, Lee ST, Wu WW, Inbasekaran M, O'Brien JJ
919 - 927	Langmuir probe measurements in an inductively coupled plasma: Electron energy distribution functions in polymerizing fluorocarbon gases used for selective etching of SiO2 Gaboriau F, Peignon MC, Cartry G, Rolland L, Eon D, Cardinaud C, Turban G
928 - 933	Microstructural characterization of radio frequency magnetron sputter-deposited Ga2O3 : Mn phosphor thin films Kim JH, Holloway PH
934 - 940	Impact of residual by-products from tungsten film deposition on process integration due to nonuniformity of the tungsten film Sidhwa A, Spinner C, Gandy T, Melosky S, Brown W, Ang S, Naseem H, Ulrich R
941 - 944	Optical properties of bias-induced CH4-H-2 plasma for diamond film deposition Zhu XD, Zhan RJ, Zhou HY, Wen XH, Li D
945 - 949	Investigation of the silicon ion density during molecular beam epitaxy growth Eifler G, Kasper E, Ashurov K, Morozov S
950 - 952	Secondary electron emission for layered structures Yu SG, Whikun YK, Jeong T, Lee J, Heo J, Lee CS, Jeon D, Kim JM
953 - 956	Effects of initial layers on surface roughness and crystallinity of microcrystalline silicon thin films formed by remote electron cyclotron resonance silane plasma Murata K, Kikukawa D, Hori M, Goto T, Ito M
957 - 957	Accommodation coefficient of tangential momentum on atomically clean and contaminated surfaces (vol A 19, pg 2499, 2001) Sazhin OV, Borisov SF, Sharipov F
961 - 961	Papers from the Tenth Canadian Semiconductor Technology Conference - 12-17 August 2001 - The Fairmont Chateau Laurier Hotel - Ottawa, Canada - Preface Landheer D, Masson D, Xu DX
962 - 965	Dry etch process optimization for small-area a-Si : H vertical thin film transistor Chan I, Nathan A
966 - 970	Development of a microwave microelectromechanical systems switch Qiu SN, Qiu CX, Shih I, Yu M, Brassard G, Seguin G
971 - 974	Heat transfer analysis and optimization of two-beam microelectromechanical thermal actuators Hickey R, Kujath M, Hubbard T
975 - 982	Dry etching of polydimethylsiloxane for microfluidic systems Garra J, Long T, Currie J, Schneider T, White R, Paranjape M
983 - 985	Low temperature SF6/O-2 electron cyclotron resonance plasma etching for polysilicon gates Hasan I, Pawlowicz CA, Berndt LP, Tarr NG
986 - 990	Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation Chen GS, Lee PY, Boothroyd CB, Humphreys CJ
991 - 994	Sensitive in situ method to measure the rate of neutral free radical production by photodeionization of negative ion beams Hayashi K, Kameko K, Kawakita S, Kawamura Y, Konno H, Kojima H, Kanayama T
995 - 998	Ab initio molecular orbital characterization of dimethyl group-III azides as sources for photolytic production of free radical beams Hayashi K, Kanayama T, Shimizu T, Kawamura Y, Kameko K, Kawakita S
999 - 1003	Quantitative voltage measurement of high-frequency internal integrated circuit signals by scanning probe microscopy Weng Z, Falkingham CJ, Bridges GE, Thomson DJ
1004 - 1010	Microstructural analysis of Ti/Al/Ti/Au ohmic contacts to n-AlGaN/GaN Chen J, Ivey DG, Bardwell J, Liu Y, Tang H, Webb JB
1011 - 1014	Determination of structural parameters in heterojunction bipolar transistors by x-ray diffraction with (002) reflection Shen A, Griswold EM, Hillier G, Dang L, Kuhl A, Ares R, Clark D, Calder ID
1015 - 1022	Galvanic corrosion behavior of GaAs in acid solutions Weng GS, Luo JL, Ivey DG
1023 - 1026	Atomic force microscopy study of the early stages of Sn phase separation on Si(111) surfaces Hu Q, Zinke-Allmang M
1027 - 1029	1/f noise of amorphous indium oxide Johanson RE, Kasap SO
1030 - 1033	Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects Li PW, Liao WM
1034 - 1037	2.4 GHz voltage control oscillator and power amplifier monolithic microwave integrated circuits based on 0.25 mu m complementary metal-oxide-semiconductor technologies Hsiao CC, Kuo CW, Ho CC, Chan YJ
1038 - 1042	Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors Servati P, Nathan A
1043 - 1047	Design of multiplexer in amorphous silicon technology Mohan N, Karim KS, Nathan A
1048 - 1051	Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors Lin CK, Chan YJ
1052 - 1056	Optoelectronic integration using aligned metal-to-semiconductor bonding Giziewicz WP, Fonstad CG
1057 - 1060	Ultrafast high-field carrier transport in a GaAs photoconductive switch Cummings MD, Holzman JF, Elezzabi AY
1061 - 1066	Reliability and low-frequency noise measurements of InGaAsP multiple quantum well buried-heterostructure lasers Letal G, Smetona S, Mallard R, Matukas J, Palenskis V, Pralgauskaite S
1067 - 1071	On the optimum design of the front-end PIN-heterojunction bipolar transistor optoelectronic integrated circuit photoreceiver Das NR, Deen MJ
1072 - 1075	Patterning of wave guides in LiNbO3 using ion beam etching and reactive ion beam etching Hines DS, Williams KE
1076 - 1078	Control of dielectric cap induced band-gap shift in 1.55 mu m laser structures Wojcik J, Robinson BJ, Thompson DA, Mascher P
1079 - 1081	Submicron, high speed complementary metal-oxide semiconductor compatible metal-semiconductor-metal photodetector DeVries AM, Tarr NG, Cheben P, Grant PD, Janz S, Xu DX
1082 - 1086	Sensitivity of x-ray photoconductors: Charge trapping and absorption-limited universal sensitivity curves Kabir MZ, Kasap SO
1087 - 1090	Amorphous silicon nitride deposited at 120 degrees C for organic light emitting display-thin film transistor arrays on plastic substrates Stryahilev D, Sazonov A, Nathan A
1091 - 1094	Fabrication of Gd2O2S : Tb based phosphor films coupled with photodetectors for x-ray imaging applications Tao S, Gu ZH, Nathan A
1095 - 1099	Active pixel sensor architectures in a-SiH for medical imaging Karim KS, Nathan A, Rowlands JA
1100 - 1104	High-temperature gas sensor using perovskite thin films on a suspended microheater Grudin O, Marinescu R, Landsberger LM, Kahrizi M, Frolov G, Cheeke JDN, Chehab S, Post M, Tunney J, Du X, Yang D, Segall D
1105 - 1110	Effect of interface trapping on the frequency response of a photodetector Das NR, Deen MJ
1111 - 1115	Capacitance accelerometer with metal microbeam Chaikovsky I, Reznik M, Karnovsky I
1116 - 1119	Effect of the interface on the local structure of Ge-Si nanostructures Kolobov AV, Oyanagi H, Brunner K, Abstreiter G, Maeda Y, Shklyaev AA, Yamasaki S, Ichikawa M, Tanaka K
1120 - 1124	Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates Sheng SR, Dion M, McAlister SP, Rowell NL
1125 - 1127	Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs Lin RM, Nee TE, Tsai MC, Chang YH, Fan PL, Chang RS
1128 - 1131	Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy Nee TE, Lin RM, Hsieh LZ, Chang LB
1132 - 1134	Growth and characterization of InAs on (100) InP ultrathin single quantum wells using tertiarybutylarsine and tertiarybutylphosphine Frankland D, Masut RA, Leonelli R
1135 - 1140	Material properties of ion beam deposited oxides for the optoelectronic industry Devasahayam AJ, Agatic I, Druz B, Hegde H, Zaritsky I, Das SR, Boudreau M, Yin T, Mallard R, LaFramboise S
1141 - 1144	Characterization of gadolinium and lanthanum oxide films on Si (100) Wu X, Landheer D, Sproule GI, Quance T, Graham MJ, Botton GA
1145 - 1148	Characterization of thin ZrO2 films deposited using Zr(O'-Pr)(2)(thd)(2) and O-2 on Si(100) Chen HW, Landheer D, Wu X, Moisa S, Sproule GI, Chao TS, Huang TY
1149 - 1153	Characterization of low permittivity (low-k) polymeric dielectric films for low temperature device integration Sivoththaman S, Jeyakumar R, Ren L, Nathan A
1154 - 1156	Passivation of GaAs metal-insulator-semiconductor structures by (NH4)(2)S-x and by evaporation Of SiO2 Jaouad A, Aktik C
1157 - 1161	Reactive pulsed laser deposition of high-k silicon dioxide and silicon oxynitride thin films for gate-dielectric applications Desbiens E, Dolbec R, El Khakani MA
1162 - 1166	Anomalous effective magnetoconductivity in disordered bipolar semiconductors: Theory and experimental simulation Chaikovsky I, Alperovich L, Gurvich Y, Melnikov A, Biryukov S