Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.24, No.3 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (90 articles)

385 - 389	Analysis of unstable species in cyclo-C4F8 plasma by ion attachment mass spectrometry Nakamura M, Hirano Y, Shiokawa Y, Takayanagi M, Nakata M
390 - 395	Characterization of facing-target reactive sputtered polycrystalline Fe3O4 films Shen JJ, Mi WB, Li ZQ, Wu P, Jiang EY, Bai HL
396 - 407	Electron inelastic mean free path and dielectric properties of a-boron, a-carbon, and their nitrides as determined by quantitative analysis of reflection electron energy loss spectroscopy Prieto P, Quiros C, Elizalde E, Sanz JM
408 - 412	Effects of Pt addition on the formation of Co-ITO granular magneto resistance films by a two-step method Ekawati W, Shi J, Nakamura Y, Nittono O
413 - 417	Electron cyclotron resonance plasma assisted pulsed laser deposition for compound host film synthesis and in situ doping Lu YF, Sun J, Yu D, Shi LQ, Dong ZB, Wu JD
418 - 423	Deposition of hafnium. oxide from Hf t-butoxide and nitric oxide Zhang Z, Xia B, Gladfelter WL, Campbell SA
424 - 430	Plasma etching of benzocyclobutene in CF4/O-2 and SF6/O-2 plasmas Kim GS, Steinbruchel C
431 - 436	Study of temperature influence on electron beam induced deposition Li W, Joy DC
437 - 443	Selective etching of high-k HfO2 films over Si in hydrogen-added fluorocarbon (CF4/Ar/H-2 and C4F8/Ar/H-2) plasmas Takahashi K, Ono K
444 - 449	Characterization of the NiFe sputter etch process in a rf plasma Kropewnicki TJ, Paterson AM, Panagopoulos T, Holland JP
450 - 458	Computational analysis of solid-vapor equilibria for ZnS and SrS phosphor synthesis conditions Wiedemeier H
459 - 466	Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors Durand C, Vallee C, Dubourdieu C, Kahn M, Derivaz M, Blonkowski S, Jalabert D, Hollinger P, Fang Q, Boyd IW
467 - 473	Vacuum science considerations for rapid reactor recovery with extremely low oxygen in low temperature low pressure chemical vapor deposition of Si1-xGex and Si1-x-yGexCy films Enicks D, Oleszek G
474 - 485	Thin film reaction of transition metals with germanium Gaudet S, Detavernier C, Kellock AJ, Desjardins P, Lavoie C
486 - 496	Attenuation of hydrogen radicals traveling under flowing gas conditions through tubes of different materials Grubbs RK, George SM
497 - 504	Surfactant-assisted growth of CdS thin films for photovoltaic applications Perkins CL, Hasoon FS
505 - 511	Characteristics and diagnostics of an ultrahigh vacuum compatible laser ablation source for crossed molecular beam experiments Gu XB, Guo Y, Kawamura E, Kaiser RI
512 - 516	Effect of multipactor discharge on Alcator C-Mod ion cyclotron range of frequency heating Graves TP, Wukitch SJ, LaBombard B, Hutchinson IH
517 - 520	Arsenic doping for synthesis of nanocrystalline p-type ZnO thin films Xu N, Xu YL, Li L, Shen YQ, Zhang TW, Wu JD, Sun J, Ying ZF
521 - 528	Low-temperature sputtering of crystalline TiO2 films Musil J, Herman D, Sicha J
529 - 536	Conductance measurement of a conical tube and calculation of the pressure distribution Mercier B
537 - 541	Mechanical properties of Cu-Al-O thin films prepared by plasma-enhanced chemical vapor deposition Chen W, Gong H, Zeng KY
542 - 549	Detecting free radicals during the hot wire chemical vapor deposition of amorphous silicon carbide films using single-source precursors Zaharias GA, Duan HL, Bent SF
550 - 553	Atmospheric pressure plasma analysis by modulated molecular beam mass spectrometry Gonzalvo YA, Whitmore TD, Rees JA, Seymour DL, Stoffels E
554 - 583	Hard multilayer coatings containing TiN and/or ZrN: A review and recent progress in their nanoscale characterization Ziebert C, Ulrich S
586 - 586	Papers from the 12th Canadian Semiconductor Technology Conference -16-19 August 2005 - The Fairmont Chateau Laurier Hotel Ottawa, Canada -Preface Bardwell J, Py C
587 - 590	Growth and characterization of GaAsSb metamorphic samples on an InP substrate Mohammedy FM, Hulko O, Robinson BJ, Thompson DA, Deen MJ, Simmons JG
591 - 594	Investigation of the optical properties of InGaAs(N):(Sb) quantum wells grown by metal organic vapor phase epitaxy Chen WC, Su YK, Chuang RW, Hsu SH
595 - 599	Energetic ion bombarded Fe/Al multilayers Al-Busaidy MS, Crapper MD
600 - 605	Compositional effect on the dielectric properties of high-k titanium silicate thin films deposited by means of a cosputtering process Brassard D, Sarkar DK, El Khakani MA, Ouellet L
606 - 611	Growth of CdTe/Si(100) thin films by pulsed laser deposition for photonic applications Neretina S, Hughes RA, Sochinskii NV, Weber M, Lynn KG, Wojcik J, Pearson GN, Preston JS, Mascher P
612 - 617	Thermochromic vanadium dioxide smart coatings grown on Kapton substrates by reactive pulsed laser deposition Soltani M, Chaker M, Haddad E, Kruzelesky RV
618 - 623	High-performance n-channel 13.56 MHz plasma-enhanced chemical vapor deposition nanocrystalline silicon thin-film transistors Lee CH, Sazonov A, Nathan A
624 - 628	Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors McAlister SP, Bardwell JA, Haffouz S, Tang H
629 - 633	Characterization and modeling of AlGaN/GaN heterostructure field effect transistors for low noise amplifiers Knox SH, Rogers JWM, Chyurlia PNA, Tarr NG, Bardwell JA, Tang H, Haffouz S
634 - 636	Improvement of electrical and optical properties of p-GaN Ohmic metals under ultraviolet light irradiation annealing processes Chae SW, Yoon SK, Kwak JS, Park YH, Kim TG
637 - 640	Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes Chang SJ, Yu CL, Chen CH, Chang PC, Huang KC
641 - 644	Visible-blind ultraviolet imagers consisting of 8X8 AlGaN p-i-n photodiode arrays Kim KC, Sung YM, Lee IH, Lee CR, Kim MD, Park Y, Kim TG
645 - 648	Molecular model T6 : C-60 bulk-heterojunction solar cells Alem S, Pandey AK, Unni KNN, Nunzi JM, Blanchard P
649 - 653	Charge localization in polymeric metal-oxide-semiconductor capacitors Marinov O, Deen MJ, Iniguez B, Ong B
654 - 656	Hole mobility and electroluminescence properties of a dithiophene indenofluorene Py C, Gorjanc TC, Hadizad T, Zhang J, Wang ZY
657 - 662	Photolithographically defined polythiophene organic thin-film transistors Li FM, Vygranenko Y, Koul S, Nathan A
663 - 667	Probing the composition of Ge dots and Si/Si1-xGex island superlattices Baribeau JM, Wu X, Lockwood DJ
668 - 672	Organic monolayers detected by single reflection attenuated total reflection infrared spectroscopy Rowell NL, Tay L, Lockwood DJ, Baribeau JM, Bardwell JA, Boukherroub R
673 - 677	Dynamic electrostatic force-gradient microscopy employing mechanoelectric cross modulation Weng Z, Kaminski T, Bridges GE, Thomson DJ
678 - 681	Characteristics of remote plasma atomic layer-deposited HfO2 films on O-2 and N-2 plasma-pretreated Si substrates Choi J, Kim S, Kim J, Kang H, Jeon H, Bae C
682 - 685	Annealing temperature effect on the performance of nonvolatile HfO2Si-oxide-nitride-oxide-silicon-type flash memory Lin YH, Chien CH, Chang CY, Lei TF
686 - 689	Time resolved electroluminescence measurements on GaAs and GaN devices Hulse JE, Sarault K, Rowell NL, Simard-Normandin M, Bardwell JA
690 - 693	Performance and potential of germanium on insulator field-effect transistors Yu DS, Kao HL, Chin A, McAlister SP
694 - 699	Microstructure investigations of indium tin oxide films cosputtered with zinc oxide at room temperature Liu DS, Lin CH, Tsai FC, Wu CC
700 - 703	Rapid thermal annealing of InAs/GaAs quantum dots with a low-temperature-grown InGaP cap layer Jiang WH, Thompson DA, Hul'ko O, Robinson BJ, Mascher P
704 - 707	Observation of resonant tunneling through a self-assembled InAs quantum dot layer Aslan B, Liu HC, Gupta JA, Wasilewski ZR, Aers GC, Raymond S, Buchanan M
708 - 712	Switching-speed calculations for Schott ky-barrier carbon nanotube field-effect transistors John DL, Pulfrey DL
713 - 717	Photoluminescence in thesilicon-oxygen system Meldrum A, Hryciw A, MacDonald AN, Blois C, Marsh K, Wang J, Li Q
718 - 722	Fabrication of out-of-plane micromirrors in silicon-on-insulator planar waveguides Lamontagne B, Cheben P, Post E, Janz S, Xu DX, Delage A
723 - 727	Formation of nanoscale columnar structures in silicon by a maskless reactive ion etching process Gharghi M, Sivoththaman S
728 - 731	Inductively coupled plasma etching of Si1-xGex in CF4/Ar and Cl-2/Ar discharges Wu SL, Lee CH, Chang SJ, Lin YM
732 - 736	Direct evidence of "spring softening" nonlinearity in micromachined mechanical resonator using optical beam deflection technique Zhao JH, Bridges GE, Thomson DJ
737 - 741	Microelectrode arrays for two-dimensional polar movement of microparticles in water Belisle A, Brown M, Hubbard T, Kujath M
742 - 746	Fabricating multilevel SU-8 structures in a single photolithographic step using colored masking patterns Taff J, Kashte Y, Spinella-Marno V, Paranjape M
747 - 751	In situ monitoring of protein adsorption on functionalized porous Si surfaces Tay L, Rowell NL, Lockwood DJ, Boukherroub R
752 - 757	Ultrawideband radar imaging system for biomedical applications Jafari HM, Liu W, Hranilovic S, Deen MJ
758 - 762	Practical approach to gradient direction sensor method in very large scale integration thermomechanical stress analysis Lakhsasi A, Bougataya M, Massicotte D
763 - 769	Very low-voltage operation capability of complementary metal-oxide-semiconductor ring oscillators and logic gates Deen MJ, Naseh S, Marinov O, Kazemeini MH
770 - 773	Low noise signal-to-noise ratio enhancing readout circuit for current-mediated active pixel sensors Ottaviani T, Karim KS, Nathan A, Rowlands JA
774 - 777	Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources Salem B, Morris D, Salissou Y, Aimez V, Charlebois S, Chicoine M, Schiettekatte F
778 - 782	Terahertz quantum cascade lasers: Fabrication, characterization, and doping effect Ban D, Wachter M, Liu HC, Wasilewski ZR, Buchanan M, Aers GC
783 - 786	Silicon-on-insulator waveguide photodetector with self-ion-implantation-engineered-enhanced infrared response Knights AP, Bradley JDB, Gou SH, Jessop PE
787 - 790	Gain spectra of 1.3 mu m GalnNAs laser diodes Zhang X, Gupta JA, Barrios PJ, Pakulski G, Wu X, Delage A
791 - 796	Modified single missing air-hole defects in InAs/InP quantum dot membrane photonic crystal microcavities Dalacu D, Frederick S, Lapointe J, Poole PJ, Aers GC, Williams RL
797 - 801	Measurements of TiOx stress induced on InP/InGaAs/InGaAsP quantum well heterostructures Francois A, Aimez V, Beauvais J, Barba D
802 - 806	Microelectromechanical system based variable optical attenuator by vertically bending waveguides Zhang GH, Jessop PE
807 - 811	Electrical isolation of electrodes with submicron separation in a digital optical switch Ng S, Abdalla S, Syrett B, Barrios P, McKinnon WR, Delage A, Golub I, Janz S, Lapointe J
812 - 816	Fabrication of lithographically defined optical coupling facets for silicon-on-insulator waveguides by inductively coupled plasma etching Yap KP, Lamontagne B, Delage A, Janz S, Bogdanov A, Picard M, Post E, Chow-Chong P, Malloy M, Roth D, Marshall P, Liu KY, Syrett B
817 - 820	H-induced effects in luminescent silicon nanostructures obtained from plasma enhanced chemical vapor deposition grown SiyO1-y : H(y > 1/3) thin films annealed in (Ar+5%H-2) Comedi D, Zalloum OHY, Irving EA, Wojcik J, Mascher P
821 - 826	Near-unity ideality factor diodes using nanocrystalline Si/multicrystalline Si heterojunctions for photovoltaic application Farrokh-Baroughi M, Lee CH, Sivoththaman S
827 - 830	Characterization of microwave photonic band-gap structures with bandpass filter applications Wu JH, Shih I, Qiu SN, Qiu CX
831 - 834	Temperature effects in complementary metal-oxide semiconductor microwave distributed amplifiers Ranuarez JC, Deen MJ, Chen CH
835 - 840	Parasitics-aware layout design of a low-power fully integrated complementary metal-oxide semiconductor power amplifier Abdelsayed SM, Deen MJ, Nikolova NK
841 - 845	On-chip inductors incorporating porous-Si and intrinsic-amorphous-Si films for rf integrated circuits Chang S, Sivoththaman S
846 - 849	High dynamic range pixel architecture for advanced diagnostic medical x-ray imaging applications Izadi MH, Karim KS
850 - 853	High dynamic range active pixel sensor arrays for digital x-ray imaging using a-Si : H Lai J, Nathan A, Rowlands J
854 - 859	Single photon counter for digital x-ray mammography tomosynthesis Goldan AH, Karim KS, Rowlands JA
860 - 865	Evaluation of complementary metal-oxide semiconductor based photodetectors for low-level light detection Ardeshirpour Y, Deen MJ, Shirani S
866 - 868	Low leakage a-Si : H thin film transistors deposited on glass substrates using hot-wire chemical vapor deposition Taghibakhsh F, Karim KS, Madan A
869 - 874	Nanoscale channel and small area amorphous silicon vertical thin film transistor Chan I, Fathololoumi S, Nathan A
875 - 878	Stable a-Si : H circuits based on short-term stress stability of amorphous silicon thin film transistors Chaji GR, Safavian N, Nathan A
879 - 882	Signal and noise modeling and analysis of complementary metal-oxide semiconductor active pixel sensors Faramarzpour N, Deen MJ, Shirani S
883 - 887	Temperature characterization of a-Si : H thin-film transistor for analog circuit design using analog hardware description language modeling Ng C, Nathan A
888 - 891	Numerical study on the scaling of a-Si : H thin film transistors Fathololoumi S, Chan I, Moradi M, Nathan A