Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.26, No.3 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (34 articles)

313 - 320	Role of oxygen impurities in etching of silicon by atomic hydrogen Veprek S, Wang CL, Veprek-Heijman MGJ
321 - 327	On the mechanism of tritium desorption from stainless steel Akaishi K, Torikai Y, Murata D, Penzhorn RD, Watanabe K, Matsuyama M
328 - 332	Influence of the microstructure on steel hardening in pulsed plasma nitriding Ochoa EA, Figueroa CA
333 - 337	Experimental study of Cr/Sc multilayer mirrors for the nitrogen K-alpha-emission line Hardouin A, Delmotte F, Ravet MF, Bridou F, Jerome A, Varniere F, Montcalm C, Hedacq S, Gullikson E, Aubert P
338 - 343	Preparation of TiO2 thin films on the inner surface of a quartz tube using atmospheric-pressure microplasma Yoshiki H, Saito T
344 - 351	Effect of gas mixing ratio on etch behavior of ZrO2 thin films in BCl3/He inductively coupled plasma Kim M, Min NK, Yun SJ, Lee HW, Efremov A, Kwon KH
352 - 359	On the gas species dependence of Pirani vacuum gauges Jousten K
360 - 364	Study of tungsten oxidation in O-2/H-2/N-2 downstream plasma Xu SL, Diao L
365 - 369	Development of a compact vacuum- and hydrogen-annealing machine for surface transformation of silicon and its applications to micro-optical devices Kanamori Y, Douzono K, Fujihira S, Hane K
370 - 374	Oxidation of silicon nanowires for top-gated field effect transistors Liu BZ, Wang YF, Ho TT, Lew KK, Eichfeld SM, Redwing JM, Mayer TS, Mohney SE
375 - 379	Thermal conductivity of semi-insulating, p-type, and n-type GaN films on sapphire Jagannadham K, Berkman EA, Elmasry N
380 - 384	Preparation of alpha-Al2O3 thin films by electron cyclotron resonance plasma-assisted pulsed laser deposition and heat annealing Yu D, Lu YF, Xu N, Sun J, Ying ZF, Wu JD
385 - 388	Dry etching of SiGe alloys by xenon difluoride Xuan G, Adam TN, Lv PC, Sustersic N, Coppinger MJ, Kolodzey J, Suehle J, Fitzgerald E
389 - 398	Tin removal from extreme ultraviolet collector optics by inductively coupled plasma reactive ion etching Shin H, Srivastava SN, Ruzic DN
399 - 405	Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system Gherasoiu I, O'Steen M, Bird T, Gotthold D, Chandolu A, Song DY, Xu SX, Holtz M, Nikishin SA, Schaff WJ
406 - 415	Experimental study of spatial nonuniformities in 100 MHz capacitively coupled plasma using optical probe Volynets VN, Ushakov AG, Sung D, Tolmachev YN, Pashkovsky VG, Lee JB, Kwon TY, Jeong KS
416 - 421	Preparation and microstructural characterization of TiC and Ti0.6W0.4/TiC0.6 composite thin films obtained by activated reactive evaporation de Oca JAM, LePetitcorps Y, Manaud JP, Garcia JRV
422 - 429	Sputtering rate of micromilling on water ice with focused ion beam in a cryogenic environment Fu J, Joshi SB, Catchmark JM
430 - 437	Tungsten atomic layer deposition on cobalt nanoparticles Wilson CA, Goldstein DN, McCormick JA, Weimer AW, George SM
438 - 443	Mechanical properties of amorphous hydrogenated carbon films fabricated on polyethylene terephthalate foils by plasma immersion ion implantation and deposition Li J, Tian XB, Yang SQ, Chu PK, Fu RKY
444 - 454	Multilayer transparent electrode consisting of silver alloy layer and metal oxide layers for organic luminescent electronic display device Koike K, Fukuda S
455 - 461	Recombination probability of oxygen atoms on dynamic stainless steel surfaces in inductively coupled O-2 plasmas Stafford L, Guha J, Donnelly VM
462 - 471	Operational regimes of the saddle field plasma enhanced chemical vapor deposition system Johnson EV, Zukotynski S, Kherani NP
472 - 480	Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O-2 plasma Heil SBS, Roozeboom F, van de Sanden MCM, Kessels WMM
481 - 484	Dielectric properties of high-density-plasma fluorinated-silicate glass by doping nitrogen Wei BJ, Cheng YL, Wang YL, Lu FH, Shih HC
485 - 493	Surface phase diagram and alloy formation for antimony on Au(110) Parihar SS, Lyman PF
494 - 497	Evolution of epitaxial Ta2O5 and Ta2O films during thermal oxidation of epitaxial tantalum films on sapphire substrates Gnanarajan S, Lam SKH
498 - 512	Seasoning of plasma etching reactors: Ion energy distributions to walls and real-time and run-to-run control strategies Agarwal A, Kushner MJ
513 - 516	Compositional analysis of lead telluride films deposited via pulsed electron-beam ablation Steigerwald A, Aga R, Collins WE, Mu R, Hmelo AB
517 - 521	Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress Belyansky M, Chace M, Gluschenkov O, Kempisty J, Klymko N, Madan A, Mallikarjunan A, Molis S, Ronsheim P, Wang Y, Yang D, Li Y
522 - 536	Multiparameter investigation of the sputtering behavior of Ag/Cu Alloys for low energy argon ion bombardment Pierson KW, Hawes CD, Kollwitz JT, Padron AS
537 - 544	Finite element modeling and experimental validation of the sealing mechanism of the ConFlat (R) joint Lutkiewicz P, Rathjen C
545 - 554	Role of chamber dimension in fluorocarbon based deposition and etching of SiO2 and its effects on gas and surface-phase chemistry Joseph EA, Zhou BS, Sant SP, Overzet LJ, Goeckner MJ
555 - 557	Thermal leakage characteristics of Pt/SrTiO3/Pt structures Son J, Stemmer S