383 - 389 |
Initial growth stage evaluation of high quality ZnSe films deposited on glass substrate Huang CW, Weng HM, Ueng HY |
390 - 393 |
Highly piezoelectric AlN thin films grown on amorphous, insulating substrates Artieda A, Sandu C, Muralt P |
394 - 399 |
Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering Sah RE, Kirste L, Baeumler M, Hiesinger P, Cimalla V, Lebedev V, Baumann H, Zschau HE |
400 - 406 |
Angular distribution of atoms emitted from a SrZrO3 target by laser ablation under different laser fluences and oxygen pressures Konomi I, Motohiro T, Azuma H, Asaoka T, Nakazato T, Sato E, Shimizu T, Fujioka S, Sarukura N, Nishimura H |
407 - 410 |
Enhanced retained dose uniformity in NiTi spinal correction rod treated by three-dimensional mesh-assisted nitrogen plasma immersion ion implantation Lu QY, Hu T, Kwok DTK, Chu PK |
411 - 418 |
Real-time spectroellipsometric characterization of nucleation, islanding, and coalescence behavior of boron films grown by soft x-ray excited chemical vapor deposition Akazawa H |
419 - 424 |
Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering Hunter CN, Check MH, Muratore C, Voevodin AA |
425 - 430 |
Highly conductive indium zinc oxide prepared by reactive magnetron cosputtering technique using indium and zinc metallic targets Tsai TK, Chen HC, Lee JH, Huang YY, Fang JS |
431 - 437 |
TiCN coatings deposited by large area filtered arc deposition technique Cheng YH, Browne T, Heckerman B |
438 - 442 |
ZnO nanocrystals on SiO2/Si surfaces thermally cleaned in ultrahigh vacuum and characterized using spectroscopic photoemission and low energy electron microscopy Ericsson LKE, Magnusson KO, Zakharov AA |
443 - 448 |
Leak rate of water into vacuum through microtubes Sharipov F, Graur I, Day C |
449 - 455 |
Comparative study between erbium and erbium oxide-doped diamondlike carbon films deposited by pulsed laser deposition technique Foong YM, Hsieh J, Li X, Chua DHC |
456 - 461 |
Effect of fluorine flow and deposition temperature on physical characteristics and stability of fluorine-doped siloxane-based low-dielectric-constant material Cheng YL, Wu J, Chiu TJ |
462 - 465 |
Fabrication of freestanding LiNbO3 thin films via He implantation and femtosecond laser ablation Gaathon O, Ofan A, Dadap JI, Vanamurthy L, Bakhru S, Bakhru H, Osgood RM |
466 - 471 |
Modeling for calculation of vanadium oxide film composition in reactive-sputtering process Yu H, Jiang YD, Wang T, Wu ZM, Yu JS, Wei XB |
472 - 475 |
High resolution Raman imaging of single wall carbon nanotubes using electrochemically etched gold tips and a radially polarized annular beam Roy D, Williams C |
476 - 485 |
Atmospheric oxygen plasma activation of silicon (100) surfaces Habib SB, Gonzalez E, Hicks RF |
486 - 494 |
Bent belt-beam gauge: Extending low-pressure measurement limits in a hot-cathode ionization vacuum gauge by combining multiple methods Watanabe F |
495 - 501 |
Spectroellipsometric investigation of optical, morphological, and structural properties of reactively sputtered polycrystalline AlN films Easwarakhanthan T, Hussain SS, Pigeat P |