Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.14, No.4 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (112 articles)

1973 - 1980	Particle-Emission Debris from a KrF Laser-Plasma X-Ray Source Bobkowski R, Fedosejevs R
1981 - 1985	Formation of Polytetrafluoroethylene Thin-Films by Using CO2-Laser Evaporation and XeCl Laser-Ablation Inayoshi M, Hori M, Goto T, Hiramatsu M, Nawata M, Hattori S
1986 - 1994	Synthesis and Deposition of Silicon-Nitride Films by Laser Reactive Ablation of Silicon in Low-Pressure Ammonia - A Parametric Study Mihailescu IN, Lita A, Teodorescu VS, Gyorgy E, Alexandrescu R, Luches A, Martino M, Barborica A
1995 - 1998	YBa2Cu3O7-X, Thin-Film over 3 in - Substrate Using Off-Axis Excimer-Laser Deposition Nagaishi T, Itozaki H
1999 - 2003	Behavior of Si Atoms in a Silane Electron-Cyclotron-Resonance Plasma at High Dissociations Yamamoto Y, Hori M, Goto T, Hiramatsu M
2004 - 2010	Fluorocarbon Radicals and Surface-Reactions in Fluorocarbon High-Density Etching Plasma .1. O-2 Addition to Electron-Cyclotron-Resonance Plasma Employing Chf3 Takahashi K, Hori M, Goto T
2011 - 2019	Fluorocarbon Radicals and Surface-Reactions in Fluorocarbon High-Density Etching Plasma .2. H-2 Addition to Electron-Cyclotron-Resonance Plasma Employing Chf3 Takahashi K, Hori M, Goto T
2020 - 2025	Relating Electric-Field Distribution of an Electron-Cyclotron-Resonance Cavity to Dry-Etching Characteristics Ko KK, Pang SW, Dahimene M
2026 - 2038	Ion Desorption Stability in Superconducting High-Energy Physics Proton Colliders Turner WC
2039 - 2047	Diamond-Like Carbon-Film Synthesized by Ion-Beam-Assisted Deposition and Its Tribological Properties He XM, Li WZ, Li HD
2048 - 2055	Radio-Frequency Matching for Helicon Plasma Sources Rayner JP, Cheetham AD, French GN
2056 - 2061	Reactive Ion-Beam-Assisted Deposition of Zirconium Oxyfluoride Thin-Films Gibson UJ, Cornett KD
2062 - 2070	Study of Surface-Reactions During Plasma-Enhanced Chemical-Vapor-Deposition of SiO2 from SiH4, O-2, and Ar Plasma Han SM, Aydil ES
2071 - 2082	Reactor Modeling for Radio-Frequency Plasma Deposition of Sinxhy - Comparison Between 2 Reactor Designs Caquineau H, Dupont G, Despax B, Couderc JP
2083 - 2087	Cfx Radical Generation by Plasma Interaction with Fluorocarbon Films on the Reactor Wall Miyata K, Hori M, Goto T
2088 - 2093	Sioxny Films Deposited by Remote Plasma-Enhanced Chemical-Vapor-Deposition Using Sicl4 Sanchez O, Aguilar MA, Falcony C, Martinezduart JM, Albella JM
2094 - 2101	Electron-Beam Controlled Radio-Frequency Discharges for Plasma Processing Kushner MJ, Collison WZ, Ruzic DN
2102 - 2105	Vacuum-Ultraviolet Emission from Radio-Frequency Plasmas of SF6 and CF4 Li J, Mcconkey JW
2106 - 2112	Probe for Measuring Ion-Beam Angular-Distribution Kahn JR, Kaufman HR, Phillips CA, Robinson RS
2113 - 2121	Spatial Distributions of Electron-Density and Electron-Temperature in Direct-Current Glow-Discharge Tao WH, Prelas MA, Yasuda HK
2122 - 2126	Analysis of Pulse-Time Modulated High-Density Discharges Meyyappan M
2127 - 2137	Fluorocarbon High-Density Plasmas .7. Investigation of Selective SiO2-to-Si3N4 High-Density Plasma Etch Processes Zhang Y, Oehrlein GS, Bell FH
2138 - 2150	Ion-Assisted Si/Xef2-Etching - Influence of Ion/Neutral Flux Ratio and Ion Energy Vugts MJ, Hermans LJ, Beijerinck HC
2151 - 2157	Role of Nitrogen in the Downstream Etching of Silicon-Nitride Blain MG, Meisenheimer TL, Stevens JE
2158 - 2162	Negative-Ion Density in Inductively-Coupled Chlorine Plasmas Hebner GA
2163 - 2168	Characterization of Helicon Wave Plasma Designed for Direct-Current Sputtering Zhang JQ, Setsuhara Y, Ariyasu T, Miyake S
2169 - 2174	Origin of Stresses in Sputtered Elemental and Alloy Thin-Films Hudson C, Somekh RE
2175 - 2181	Electrostatic Scattering of Ionic Species in Low-Pressure Sputtering of Ti and Tin Backhouse CJ, Robbie K, Parks J, Broughton JN, Dew S, Este G, Brett MJ
2182 - 2186	Discharge Characteristics of a Facing Target Sputtering Device Using Unbalanced Magnetrons Muralidhar GK, Musil J, Kadlec S
2187 - 2191	High-Rate Magnetron Sputtering Musil J, Rajsky A, Bell AJ, Matous J, Cepera M, Zeman J
2192 - 2201	Oxidation-Enhanced Roughening of Thin Co Films During Sputtering by O-2(+) Ions Mohadjeri B, Petravic M, Svensson BG
2202 - 2206	Microstructure of Radio-Frequency Sputtered Ag1-Xsix Alloys Leedy KD, Rigsbee JM
2207 - 2214	Reactive Sputter-Deposition and Characterization of Lead-Oxide Films Pauleau Y, Harry E
2215 - 2219	Characteristics of Reactively Sputtered Pt-SnO2 Thin-Films for Co Gas Sensors Digiulio M, Micocci G, Serra A, Tepore A, Rella R, Siciliano R
2220 - 2230	Postdeposition Annealing of Radio-Frequency Magnetron-Sputtered ZnO Films Puchert MK, Timbrell PY, Lamb RN
2231 - 2234	Computational Modeling of Reactive Gas Modulation in Radio-Frequency Reactive Sputtering Sekiguchi H, Murakami T, Kanzawa A, Imai T, Honda T
2235 - 2237	Compact-Heating Stage for Use in Sputtering in Active Oxygen Gas Environments Igarashi Y, Fujino Y, Takahashi T
2238 - 2242	Low-Temperature Growth of Aluminum Nitride Thin-Films on Silicon by Reactive Radio-Frequency Magnetron Sputtering Cheng CC, Chen YC, Wang HJ, Chen WR
2243 - 2246	Physical-Properties and Chemical-States of RF Sputter-Deposited Siwox Films Shibata I, Nishide T, Hasegawa T
2247 - 2250	Formation of High-Temperature Phases in Sputter-Deposited Ti-Based Films Below 100-Degrees-C Musil J, Bell AJ, Vlcek J, Hurkmans T
2251 - 2256	Cu(in,Ga)Se-2 Thin-Films and Solar-Cells Prepared by Selenization of Metallic Precursors Basol BM, Kapur VK, Halani A, Leidholm CR, Sharp J, Sites JR, Swartzlander A, Matson R, Ullal H
2257 - 2262	Analysis of Aluminum Nitride Epitaxial-Growth by Low-Pressure Metal-Organic Chemical-Vapor-Deposition Buggeln RC, Meyyappan M, Shamroth SJ
2263 - 2268	Preparation and Characterization of a Well-Ordered Surface on a Si(001) Substrate with a Buried Metal Layer for Application of Infrared Reflection Spectroscopy Kobayashi Y, Sumitomo K, Prabhakaran K, Ogino T
2269 - 2274	Investigation of Deep Levels in ZnSe-Cl Films Grown by Molecular-Beam Epitaxy Hernandez L, Demelo O, Melendezlira M, Riveraalvarez Z, Hernandezcalderon I
2275 - 2281	Surface-Extended X-Ray-Absorption Fine-Structure Study of Silicon Deposited Onto GaAs(110) Hasnaoui ML, Flank AM, Pompa M, Lagarde P
2282 - 2288	Adsorption Controlled Si((1-X))Ge-X Growth During Chemical-Vapor-Deposition Kuhne H, Fischer A, Morgenstern T, Zaumseil P
2289 - 2302	Visualization of a Buried Organic Interlace by Imaging Time-of-Flight Secondary-Ion Mass-Spectrometry and Scanning Auger Microprobe of an Ion-Beam Crater Edge Schamberger PC, Jones GL, Gardella JA, Mckeown PJ, Davis LE
2303 - 2307	Cleaning Thin-Film Diamond Surfaces for Device Fabrication - An Auger-Electron Spectroscopic Study Baral B, Chan SS, Jackman RB
2308 - 2314	Isothermal Hydrogen Desorption from the Diamond (100)2X1 Surface Mcgonigal M, Kempel ML, Hammond MS, Jamison KD
2315 - 2324	Time-Resolved Mass-Spectrometry in Rough Vacuum Environment Laimer J, Schnabl O, Schwarzler CG, Stori H
2325 - 2330	Thermal-Stability of Photochemical Native-Oxide Films on Hg1-xCdxTe Winton GH, Warrington N, Faraone L
2331 - 2336	Numerical Ellipsometry - Applications of a New Algorithm for Real-Time, in-Situ Film Growth Monitoring Urban FK, Comfort JC
2337 - 2342	Molecular-Beam Sampling to Analyze the Reaction-Mechanism of Chemical-Vapor-Deposition Tsutsumi Y, Ikegawa M, Usui T, Ichikawa Y, Watanabe K, Kobayashi J
2343 - 2350	Infrared Diode-Laser Absorption-Spectroscopy Measurements of Cfx (X=1-3) Radical Densities in Electron-Cyclotron Employing C4F8, C2F6, CF4, and Chf3 Gases Miyata K, Hori M, Goto T
2351 - 2355	Atomic-Force Microscopy of Amorphous Hydrogenated Carbon-Nitrogen Films Deposited by Radio-Frequency-Plasma Decomposition of Methane-Ammonia Gas-Mixtures Prioli R, Zanette SI, Caride AO, Franceschini DF, Freire FL
2356 - 2360	In-Situ Wafer Temperature Monitoring of Silicon Etching Using Diffuse-Reflectance Spectroscopy Booth JL, Beard BT, Stevens JE, Blain MG, Meisenheimer TL
2361 - 2365	Relative Sensitivity Factors of B Related to SiGe Alloy Composition on Secondary-Ion Mass-Spectrometry with an Oxygen Primary Ion-Beam Fujinaga K
2366 - 2371	Surface Chemical-Reaction Between Polycarbonate and Kilo-Electron-Volt Energy Ar+ Ion in Oxygen Environment Choi WK, Koh SK, Jung HJ
2372 - 2377	Interaction of Water with Clean and Gallium Precovered Fe(111) Surfaces Jiang P, Zappone MW, Bernasek SL, Robertson A
2378 - 2391	Microtribological Studies of Unlubricated and Lubricated Surfaces Using Atomic-Force Friction Force Microscopy Koinkar VN, Bhushan B
2392 - 2404	Comparison of Submicron Particle Analysis by Auger-Electron Spectroscopy, Time-of-Flight Secondary-Ion Mass-Spectrometry, and Secondary-Electron Microscopy with Energy-Dispersive X-Ray Spectroscopy Childs KD, Narum D, Lavanier LA, Lindley PM, Schueler BW, Mulholland G, Diebold AC
2405 - 2413	Recoil Spectrometry of Thin-Film Reactions in the Pd/InP System Persson L, Elbouanani M, Hult M, Jonsson P, Whitlow HJ, Andersson M, Georgsson K, Bubb IF, Johnston PN, Walker SR, Cohen DD, Dytlewski N, Zaring C, Ostling M
2414 - 2417	Focusing Glass-Capillary Array Molecular-Beam Inlet for a High-Sensitivity Mass-Spectrometer System Ma Y, Liu BY, Lee HS, Mauersberger K, Morton J
2418 - 2426	Physical-Properties of Diamond-Like Carbon-Films Deposited in Mixed Atmospheres of C2H4-Ar, C2H4-H-2, and C2H4-N-2 Nakayama M, Matsuba Y, Shimamura J, Yamamoto Y, Chihara H, Kato H, Maruyama K, Kamata K
2427 - 2432	Conductance and Leakage in Superconducting Tunnel-Junctions Goodchild MS, Barber ZH, Blamire MG
2433 - 2436	Schottky-Barrier at the Au/Gap(110) Interface Fanfoni M, Goletti C, Chiaradia P, Ng W, Cerrina F, Hwu Y, Terrasi A, Margaritondo G
2437 - 2442	Characterization of as-Grown and Annealed Thin SiO2-Films Formed in 0.1 M HCl Allegretto EM, Bardwell JA
2443 - 2447	Solid-Phase Epitaxy with X-Ray-Irradiation Using a Compact Synchrotron-Radiation Source Aurora Katoh T, Yamada H, Sato F, Hirano Y, Chikawa J
2448 - 2453	Electronic States of a Clean Si(110) 16X2 Surface Studied by Angle-Resolved Photoemission and Surface Differential Reflectivity Cricenti A, Nesterenko B, Perfetti P, Lelay G, Sebenne C
2454 - 2461	Effect of a Surface-Layer on the Stress-Relaxation of Thin-Films Thouless MD, Rodbell KP, Cabral C
2462 - 2469	Residual Macroscopic Stress in Highly Preferentially Oriented Titanium Nitride Coatings Deposited on Various Steel Types Quaeyhaegens C, Knuyt G, Stals LM
2470 - 2474	Changes in Refractive-Index and in Chemical-State of Synchrotron-Radiation Irradiated Fluorinated Polyimide Films Maruo YY, Sasaki S, Haga T, Kinoshita H, Horiuchi T, Tamamura T
2475 - 2479	Photoelectron-Spectroscopy During Pulsed-Laser Melting of Surfaces Gantner G, Boyen HG, Oelhafen P, Rink K
2480 - 2482	Photoluminescence Measurements in the Phase-Transition Region for CdS Thin-Films Arizacalderon H, Lozadamorales R, Zelayaangel O, Mendozaalvarez JG, Banos L
2483 - 2487	Measurement of the Elastic Stress of Thin-Films Deposited on Gallium-Arsenide Mihailovich RE, Koscica T, Zeto RJ
2488 - 2492	Characterization of Silicon Oxynitride Thin-Films by Infrared Reflection-Absorption Spectroscopy Firon M, Bonnelle C, Mayeux A
2493 - 2498	Strengthening of Al2O3-Based Ceramics by Metalorganic Chemical-Vapor-Deposition Konyashin IY
2499 - 2504	Effects of Y or Gd Addition on the Structures and Resistivities of Al Thin-Films Takayama S, Tsutsui N
2505 - 2510	Formation of Chromium-Oxide on 316L Austenitic Stainless-Steel Ohmi T, Nakagawa Y, Nakamura M, Ohki A, Koyama T
2511 - 2516	Properties of Radio Frequency-Sputtered Alumina Films on Flat and Grooved Substrates Ross CA
2517 - 2521	Characteristics of Cu Thin-Films on a Glass Substrate by Partially-Ionized Beam Deposition at Room-Temperature Yoon YS, Kim KH, Jang HG, Jung HJ, Koh SK
2522 - 2526	Effect of Annealing on Ag Films on Pt(111) Tsay JS, Shern CS
2527 - 2534	High-Temperature Oxidation of Thin Crn Coatings Deposited on Steel Milosev I, Abels JM, Strehblow HH, Navinsek B, Metikoshukovic M
2535 - 2543	Effect of Energetic Particles on the Residual-Stresses in Nonhydrogenated Amorphous-Carbon Films Deposited on Grounded Substrates by de Magnetron Sputtering Mounier E, Pauleau Y
2544 - 2546	Surface Flatness of Polished Metal Single-Crystals Tripa CE, Yates JT
2547 - 2550	Growth Dynamics and Surface Fine-Structure of ZnO Ultrafine Particle Films Zhao DC, Qu ZK, Pan XR
2551 - 2553	Direct Observation of Beta-Tah Phase Precipitation in Tantalum-Hydrogen Solid-Solution Chen CL, Zhou DS, Mitchell TE, Ye HQ
2554 - 2563	Growth of Ultrathin Crystalline Al2O3 Films Ore Ru(0001) and Re(0001) Surfaces Wu YT, Garfunkel E, Madey TE
2564 - 2569	Solid-State Reaction of Ti and Ni Thin-Films with Aluminum Nitride He XJ, Tao K, Fan YD
2570 - 2576	Whiskers Grown on Aluminum Thin-Films During Heat-Treatments Hinode K, Homma Y, Sasaki Y
2577 - 2581	Granular Superconductor Contacts to 2-Dimensional Electron Gases Marsh AM, Williams DA
2582 - 2591	A Critical-Evaluation of Thermal Mass-Flow Meters Tison SA
2592 - 2598	Measurements of the Tangential Momentum Accommodation Coefficient in the Transition-Flow Regime with a Spinning Rotor Gauge Gabis DH, Loyalka SK, Storvick TS
2599 - 2609	Effects of Readsorption on Outgassing Rate Measurements Redhead PA
2610 - 2617	Miniature Peristaltic Vacuum Pump for Use in Portable Instruments Piltingsrud HV
2618 - 2623	Synchrotron-Radiation-Induced Gas Desorption from a Prototype Large Hadron Collider Beam Screen at Cryogenic Temperatures Calder R, Grobner O, Mathewson AG, Anashin VV, Dranichnikov A, Malyshev OB
2624 - 2626	Vacuum Chamber for the Wiggler of the Taiwan Light-Source at the Synchrotron-Radiation Research-Center Wang DJ, Chen JR, Hsiung GY, Shyy JG, Huang JR, Hsu SN, Hsiao KM, Liu YC
2627 - 2635	Rarefied-Gas Flow-Through a Long Tube at Any Temperature Ratio Sharipov F
2636 - 2640	Outgassing Rate Characteristic of a Stainless-Steel Extreme High-Vacuum System Chun I, Cho BL, Chung SM
2641 - 2644	Outgassing from Aluminum Surface-Layer Induced by Synchrotron-Radiation Ota N, Kanazawa K, Kobayashi M, Ishimaru H
2645 - 2650	Secondary-Ion Mass-Spectroscopy Resolution with Ultra-Low Beam Energies Clegg JB, Smith NS, Dowsett MG, Theunissen MJ, Deboer WB
2651 - 2654	Preparation of Crystalline Beta-Barium Borate (Beta-BaB2O4) Thin-Films by Opposed-Targets Magnetron Sputtering Liao HB, Xiao RF, Yu P, Wong GK, Zheng JQ
2655 - 2658	Compact Electron-Cyclotron-Resonance Plasma Source for Molecular-Beam Epitaxy Applications Rossner U, Brunlecunff D, Barski A, Daudin B
2659 - 2661	IBM Personal-Computer Data-Acquisition and Processing System to Upgrade an Out-of-Date Mass-Spectrometer Callejas RL, Cardenas MJ, Cruz GC, Lugo LM, Alarcon EC, Alvarado RV, Gonzalez MG, Orta AF
2662 - 2665	Thermal-Stability of Rapidly Annealed CoSi2/N-GaAs and CoSi2/P-InP Schottky Contacts Eftekhari G
2666 - 2668	Temperature-Dependence of A-C-H Film Deposition in a CH4 Radio-Frequency Plasma Mutsukura N, Saitoh K
2669 - 2670	Minimum Profile Ultrahigh-Vacuum Gate Valve Based on Linear/Rotary Motion Feedthrough Stolow A
2671 - 2673	Simple, Efficient Technique for Exposing Surfaces to Hydrogen-Atoms Bermudez VM
2674 - 2676	Hollow-Cathode Assisted Sputtering Backhouse CJ, Dew SK, Brett MJ
2677 - 2679	Cheap and Stable Titanium Source for Use in Oxide Molecular-Beam Epitaxy Systems Theis CD, Schlom DG
2680 - 2680	Modeling the Pump-Down of a Reversibly Adsorbed Phase .1. Monolayer and Submonolayer Coverage (Vol 13, Pg 467, 1995) Redhead PA
2680 - 2680	Dynamic Rate and Thickness Metrology During Poly-Si Rapid Thermal Chemical-Vapor-Deposition from SiH4 Using Real-Time in-Situ Mass-Spectrometry (Vol 14, Pg 267, 1996) Tedder LL, Rubloff GW, Conaghan BF, Parsons GN