2463 - 2468 |
Migration-Assisted Si Subatomic-Layer Epitaxy from Si2H6 Suda Y |
2469 - 2472 |
Unit-Cell Layer-by-Layer Heteroepitaxy of BaO Thin-Films at Temperatures as Low as 20-Degrees-C Ohnishi T, Yoshimoto M, Lee GH, Maeda T, Koinuma H |
2473 - 2477 |
Deposition of GaAs(111) Epilayers on BaF2(111)/Si(100) Heterostructures by Molecular-Beam Epitaxy Stumborg MF, Santiago F, Chu TK, Boulais KA |
2478 - 2484 |
Effect of Plasma and Thermal Annealing on Chemical-Vapor-Deposition Dielectrics Grown Using SiH4-H2O2 Gas-Mixtures Gaillard F, Brault P, Brouquet P |
2485 - 2488 |
Structural Control of TiO2 Film Grown on MgO(001) Substrate by Ar-Ion Beam Sputtering Aoki T, Maki K, Tang Q, Kumagai Y, Matsumoto S |
2489 - 2491 |
Spectroscopic Studies of Native-Oxide Formation on a SiO2-InSb Interface Valcheva E |
2492 - 2501 |
Surface-Analysis Study of the Oxidation of Organotin Films Deposited by ArF Excimer-Laser Chemical-Vapor-Deposition Larciprete R, Borsella E, Depadova P, Perfetti P, Crotti C |
2502 - 2507 |
Chemical-Reactions Induced by the Room-Temperature Interaction of Hyperthermal Atomic-Hydrogen with the Native-Oxide Layer on GaAs(001) Surfaces Studied by Ion-Scattering Spectroscopy and X-Ray Photoelectron-Spectroscopy Wolan JT, Mount CK, Hoflund GB |
2508 - 2517 |
Effect of H-2 Addition on Surface-Reactions During CF4/H-2 Plasma-Etching of Silicon and Silicon Dioxide Films Marra DC, Aydil ES |
2518 - 2520 |
Effect of the Cr-Rich Oxide Surface on Fast Pumpdown to Ultrahigh-Vacuum Chun I, Cho B, Chung S |
2521 - 2528 |
Comparison of Surface Oxidation of Titanium Nitride and Chromium Nitride Films Studied by X-Ray-Absorption and Photoelectron-Spectroscopy Esaka F, Furuya K, Shimada H, Imamura M, Matsubayashi N, Sato H, Nishijima A, Kawana A, Ichimura H, Kikuchi T |
2529 - 2536 |
Investigation of the Cu/Bcb and Cu/Ppq Interfaces by Photoelectron-Spectroscopy Schuhler N, Oelhafen P |
2537 - 2541 |
Auger-Electron Spectroscopy Analysis of Oxidation-States of Te in Amorphous CdTe Oxide Thin-Films Zapatanavarro A, Bartoloperez P, Zapatatorres M, Castrorodriguez R, Pena JL, Farias MH |
2542 - 2547 |
Improved Secondary-Ion Mass-Spectroscopy Detection Limits of Hydrogen, Carbon, and Oxygen in Silicon by Suppression of Residual-Gas Ions Using Energy and Ejection Angle Filtering Yamazaki H |
2548 - 2552 |
Auger-Electron Spectroscopy and Electron-Energy-Loss Spectroscopy Study of the Adsorption of Nitrogen on a Polycrystalline Zirconium Surface Kurahashi M, Yamamoto M, Mabuchi M, Naito S |
2553 - 2556 |
The Defective Nature of the TiO2(110) (1X2) Surface Patel R, Guo Q, Cocks I, Williams EM, Roman E, Desegovia JL |
2557 - 2560 |
Extreme Surface Sensitivity in Neon-Ion Scattering from Silicon at Ejection Energies Below 80 eV - Evidence for the Presence of Oxygen on Ion-Bombarded SiO2 Wittmaack K |
2561 - 2564 |
Core-Electron Excitation for Si Photochemical Process Using High-Intensity Monochromatized Synchrotron-Radiation Iba Y, Sugita Y, Nara Y |
2565 - 2568 |
Repeatability of Si Concentration Measurements in Si-Doped GaN Films Chi PH, Simons DS, Wickenden AE, Koleske DD |
2569 - 2573 |
Temperature-Dependence of Reflection High-Energy Electron-Diffraction Intensity from Si(111)-7X7 Superlattice Yamaguchi K, Mitsui H, Shigeta Y |
2574 - 2578 |
Electron-Spectroscopy Studies of Interface Formation Between Metal-Electrodes and Luminescent Organic Materials Park Y, Choong VE, Hsieh BR, Tang CW, Wehrmeister T, Mullen K, Gao Y |
2579 - 2584 |
Fine-Structures of Valence-Band, X-Ray-Excited Auger-Electron, and Plasmon Energy-Loss Spectra of Diamond-Like Carbon-Films Obtained Using X-Ray Photoelectron-Spectroscopy Seo SC, Ingram DC |
2585 - 2591 |
In-Situ Monitoring and Characterization of SiC Interface Formed in Carbon-Films Grown by Pulsed-Laser Deposition Samano EC, Soto G, Valenzuela J, Cota L |
2592 - 2596 |
Characterization of CdTe-Sb Co-Sputtered Films Picosvega A, Ramirezbon R, Espinozabeltran FJ, Zelayaangel O, Farias M |
2597 - 2604 |
Chemical Sputtering Measurements in Tore Supra by Aftershot Mass-Spectrometry Outgassing Studies Delacal E, Gauthier E |
2605 - 2608 |
Insulator-Coated Sputter Gun for Growing Superconducting Oxide-Films Lin RJ, Chen LJ |
2609 - 2614 |
Microstructural Change of Tin Films by C and B Ion Implantations Ohara H, Nakayama A, Nomura T |
2615 - 2622 |
Observations of Standing Waves on an Inductive Plasma Coil Modeled as a Uniform Transmission-Line Lamm AJ |
2623 - 2626 |
Hard Boron Suboxide-Based Films Deposited in a Sputter-Sourced, High-Density Plasma Deposition System Doughty C, Gorbatkin SM, Tsui TY, Pharr GM, Medlin DL |
2627 - 2635 |
Ion Energy, Ion Flux, and Ion Species Effects on Crystallographic and Electrical-Properties of Sputter-Deposited Ta Thin-Films Ino K, Shinohara T, Ushiki T, Ohmi T |
2636 - 2643 |
Plasma Nitriding Combined with a Hollow-Cathode Discharge Sputtering at High-Pressures Benda M, Vlcek J, Cibulka V, Musil J |
2644 - 2652 |
Role of Low-Energy Secondary Electrons in Synchrotron Radiation-Excited Chemical-Vapor-Deposition of Silicon-Nitride Films Kyuragi H |
2653 - 2660 |
Effects of Low-Energy-Electron and Ion Irradiation on Co/Cu(100) - In-Situ Production and Coadsorbate-Induced Adsorption of Co Above Room-Temperature Yu H, Hu DQ, Leung KT |
2661 - 2669 |
Etching of Si at Low-Temperatures Using a SF6 Reactive Ion-Beam - Effect of the Ion Energy and Current-Density Chevolleau T, Tessier PY, Cardinaud C, Turban G |
2670 - 2672 |
Experimental-Study on Intermediate and Gradient-Index Dielectric Thin-Films by a Novel Reactive Sputtering Method Tang Q, Ogura S, Yamasaki M, Kikuchi K |
2673 - 2676 |
TiO2 Electrochromic Thin-Films by Reactive Direct-Current Magnetron Sputtering Yoshimura K, Miki T, Tanemura S |
2677 - 2686 |
Ion-Induced Chemical-Vapor-Deposition of High-Purity Cu Films at Room-Temperature Using a Microwave-Discharge H Atom Beam Source Chiang TP, Sawin HH, Thompson CV |
2687 - 2692 |
Study on the Growth of Biaxially Aligned Yttria-Stabilized Zirconia Films During Ion-Beam-Assisted Deposition Mao YJ, Ren CX, Yuan J, Zhang F, Liu XH, Zou SC |
2693 - 2697 |
Model for Hydrogen Desorption in SiGe(100) Films Vizoso J, Martin F, Sune J, Nafria M |
2698 - 2708 |
Metastable Chlorine Ion Kinetics in Inductively-Coupled Plasmas Hebner GA, Fleddermann CB, Miller PA |
2709 - 2716 |
Generation of a Velocity Selected, Pulsed-Source of Hyperthermal (1-10 eV) Neutral Metal Atoms for Thin-Film Growth-Studies Knowles MP, Leone SR |
2717 - 2727 |
Automated Tuning of an Electron-Cyclotron-Resonance Cavity to a Microwave-Power Source Hanish CK, Grizzle JW |
2728 - 2739 |
Characterization of Arc-Like Ti Vapor Plasma on the High-Voltage Electron-Beam Evaporator Kajioka H |
2740 - 2742 |
Low-Energy Broad-Beam Electron-Gun Barefoot TW, Ebinger HD, Yates JT |
2743 - 2749 |
Chemical-Vapor-Deposition of Diamond Films on Hydrofluoric-Acid Etched Silicon Substrates Schelz S, Borges CF, Martinu L, Moisan M |
2750 - 2754 |
Carbon Nucleation on Si(100) Using a Negative Carbon Ion-Beam Ko YW, Kim SI |
2755 - 2765 |
Fluoroether Bonding to Carbon Overcoats Cornaglia L, Gellman AJ |
2766 - 2769 |
Control of Silicon Crystal Temperature by Measurement of Resistivity Dohnalek Z, Mezhenny S, Lyubinetsky I, Choyke WJ, Yates JT |
2770 - 2776 |
Low-Temperature Fabrication of Amorphous-Silicon Thin-Film Transistors by DC Reactive Magnetron Sputtering Mccormick CS, Weber CE, Abelson JR, Davis GA, Weiss RE, Aebi V |
2777 - 2780 |
Physical and Optical-Properties of an Antireflective Layer Based on Sioxny Gaillard F, Schiavone P, Brault P |
2781 - 2786 |
Microcrystalline Oxide-Incorporated New Diffusion Barrier for Dynamic Random-Access Memory and Ferroelectric Random-Access Memory Capacitor Electrode Yoon DS, Baik HK, Lee SM |
2787 - 2792 |
Studies of Electrical and Chemical-Properties of SiO2/Si After Rapid Thermal Nitridation Using Surface-Charge Spectroscopy and X-Ray Photoelectron-Spectroscopy Chan RW, Kwok RW, Lau WM, Yan H, Wong SP |
2793 - 2797 |
Search for Coupling in Ferromagnetic/Superconducting Multilayers - Fe4N/NbN Mattson JE, Potter CD, Conover MJ, Sowers CH, Bader SD |
2798 - 2801 |
Optimization of Bi2Te3 Thin-Films for Microintegrated Peltier Heat-Pumps Shafai C, Brett MJ |
2802 - 2806 |
Primary Pressure Standard for Calibration in the Medium Vacuum Range Hinkle LD, Provost J, Surette DJ |
2807 - 2811 |
Sputtered Cu/Co Films for Giant Magnetoresistance - Effect of Plasma Gas and Annealing Treatment Maya L, Paranthaman M, List FA, Warmack RJ |
2812 - 2815 |
Constant Power Operation of Incandescent Micromachined Polysilicon Microresistors for Use as Vacuum Pressure Sensors Kleckner TC, Lawson RP, Robinson AM |
2816 - 2819 |
Etching of Boron-Nitride in Radio-Frequency Plasmas Schaffnit C, Thomas L, Rossi F |
2820 - 2821 |
An Easily Constructed High-Voltage Power-Supply for Electrostatic Ion-Beam Lensing and Deflection Optics Gannon T, Watson PR |
2822 - 2822 |
Simple and Economical Heating Tape for Vacuum Chamber Baking Chegwidden S, Little T, Ohuchi F |
2823 - 2823 |
Wavelength Tunable Fiber Bragg Grating Devices Based on Sputter-Deposited Resistive and Piezoelectric Coatings (Vol 15, Pg 1791, 1997) Fox GR, Muller CA, Setter N, Costantini DM, Ky NH, Limberger HG |
2824 - 2824 |
Anisotropy in the Lateral Momentum of Co Chemisorbed on Cu(110) Studied by Time-of-Flight Electron Simulated Desorption Ion Angular-Distribution (Vol 15, Pg 1548, 1997) Ahner J, Mocuta D, Ramsier RD, Yates JT |