화학공학소재연구정보센터

Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.21, No.5 Entire volume, number list
ISSN: 0734-2101 (Print) 

In this Issue (40 articles)

L5 - L9 Electrical characteristics of ZrO2 prepared by electrochemical anodization of Zr in an ammonium tartrate electrolyte
Jeon SH, Hwang HS
L10 - L12 Titanium alloy material with very low outgassing
Kurisu H, Muranaka T, Wada N, Yamamoto S, Matsuura M, Hesaka M
L13 - L15 Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AIN subcycles in atomic layer deposition
Lee YJ, Kang SW
L16 - L18 Atomic layer deposition of zirconium silicate films using zirconium tetra-tert-butoxide and silicon tetrachloride
Kim WK, Kang SW, Rhee SW
L19 - L21 Metrology of 1-10 nm thick CNx films: Thickness, density, and surface roughness measurements
Li DJ, Chen YF, Chung YW, Freire FL
1589 - 1594 Real-time etching monitor using argon quadrupole mass spectrometry for 100 nm class WSiN gate fabrication
Jin Y, Takahashi C, Ono T
1595 - 1602 Preparation and characterization of superhard boron-suboxide films
Huang H, Ong CW, Zheng B, Kwok RWM, Lau WM, He JW
1603 - 1608 Properties of Au and Ag Schottky diodes prepared on undoped n-ZnO
Polyakov AY, Smirnov NB, Kozhukhova EA, Vdovin VI, Ip K, Norton DP, Pearton SJ
1609 - 1615 Deposition pressure dependence of internal stress in TiN films deposited by filtered cathodic vacuum arc
Cheng YH, Tay BK
1616 - 1619 Etch characteristics of (Pb,Sr)TiO3 thin films using CF4/Ar inductively coupled plasma
Kim GH, Kim KT, Kim DP, Kim CI
1620 - 1624 Surface reaction of bis(tertbutylimido)bis(diethylamido)tungsten precursor on Si(100)-(2X1)
Wu JB, Yang YW, Lin YF, Chiu HT
1625 - 1630 X-ray photoelectron spectroscopy and secondary electron yield analysis of Al and Cu samples exposed to an accelerator environment
Rosenberg RA, McDowell MW, Ma Q, Harkay KC
1631 - 1634 Ultrathin copper aluminum and nickel aluminide protective oxidation studied with an x-ray photoelectron spectrometer
Moore JF, McCann MP, Pellin MJ, Zinovev A, Hryn JN
1635 - 1638 Corrosion behavior of sputter-deposited TiN thin films
Martin-Palma RJ, Manso M, Martinez-Duart JM, Conde A, Damborenea JJ
1639 - 1643 The role of trapped Ar atoms in the mechanical properties of boron carbide films deposited by dc-magnetron sputtering
Jacobsohn LG, Averitt RD, Nastasi M
1644 - 1648 Method to characterize the three-dimensional distribution of focused ion beam induced damage in silicon after 50 keV Ga+ irradiation
Lugstein A, Brezna W, Hobler G, Bertagnolli E
1649 - 1654 Optimization of secondary ion mass spectrometry detection limit for N in SiC
Pivovarov AL, Stevie FA, Griffis DP, Guryanov GM
1655 - 1664 Oxygenated polymeric thin films deposited from toluene and oxygen by remote plasma enhanced chemical vapor deposition
Barranco A, Cotrino J, Yubero F, Gonzalez-Elipe AR
1665 - 1670 Influence of the incident angle of energetic carbon ions on the properties of tetrahedral amorphous carbon (ta-C) films
Liu DP, Benstetter G, Lodermeier E, Vancea J
1671 - 1674 Focusing of MeV ion beams by means of tapered glass capillary optics
Nebiki T, Yamamoto T, Narusawa T, Breese MBH, Teo EJ, Watt F
1675 - 1679 Plasma load characteristics of pulsed-bias arc ion plating
Lin GQ, Ding ZF, Qi D, Zhao YH, Wang NH, Dong C, Huang RF, Wen LS
1680 - 1682 Reaction between nitrogen gas and silicon species during pulsed laser ablation
Umezu I, Inada M, Kohno K, Yamaguchi T, Makino T, Sugimura A
1683 - 1687 Investigation of interactions between inert gases and nitrogen in direct current triode discharges
Davison A, Avelar-Batista JC, Wilson AD, Leyland A, Matthews A, Fancey KS
1688 - 1701 Mechanisms for deposition and etching in fluorosilane plasma processing of silicon
Williams KL, Butoi CI, Fisher ER
1702 - 1707 X-ray diffraction analyses of titanium coatings produced by electron beam evaporation in neon and argon inert gases
Avelar-Batista JC, Wilson AD, Davison A, Matthews A, Fancey KS
1708 - 1716 Study of C4F8/N-2 and C4F8/Ar/N-2 plasmas for highly selective organosilicate glass etching over Si3N4 and SiC
Hua XF, Wang X, Fuentevilla D, Oehrlein GS, Celii FG, Kirmse KHR
1717 - 1723 Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation
Li TQ, Noda S, Komiyama H, Yamamoto T, Ikuhara Y
1724 - 1733 Measurements of neutral plasma species in an argon/isopropyl alcohol plasma for the deposition of organic films
Guerin DC, Fernsler RF, Shamamian VA
1734 - 1738 Observation of the phase formation in Fe-N films deposited by reactive pulsed laser deposition
Wang N, Ulmer KM, Constant AP, Anderegg JW, Snyder JE
1739 - 1744 Damage effects from medium-energy ion bombardment during the growth of cubic-boron nitride films
Gago R, Vinnichenko M, Abendroth B, Kolitsch A, Moller W
1745 - 1751 Composition control and dielectric properties of bismuth zinc niobate thin films synthesized by radio-frequency magnetron sputtering
Lu JW, Chen ZQ, Taylor TR, Stemmer S
1752 - 1757 Evidences for dry deintercalation in layered compounds upon controlled surface charging in x-ray photoelectron spectroscopy
Feldman Y, Zak A, Tenne R, Cohen H
1758 - 1764 Structural and electrical characteristics of the interfacial layer of ultrathin ZrO2 films on partially strain compensated Si0.69Ge0.3C0.01 layers
Mahapatra R, Maikap S, Lee JH, Kar GS, Dhar A, Kim DY, Bhattacharya D, Ray SK
1765 - 1769 Measurement of charge-separation potentials in GaAs1-xNx
Johnston SW, Ahrenkiel RK, Tu CW, Hong YG
1770 - 1775 Photoinduced anisotropy of second-harmonic generation from azobenzene-modified alkylsiloxane monolayers
Yi YW, Furtak TE, Farrow MJ, Walba DM
1776 - 1783 Photodesorption of gases in vacuum glazing
Ng N, Collins RE, So L
1784 - 1790 Fluorinated amorphous carbon films prepared by plasma enhanced chemical vapor deposition for solar cell applications
Valentini L, Salerni V, Armentano I, Kenny JM, Lozzi L, Santucci S
1791 - 1795 Influence of sputtering conditions on microstructure and mechanical properties of Zr-Si-N films prepared by radio-frequency-reactive sputtering
Zhou M, Nose M, Deguchi Y, Mae T, Nogi K
1796 - 1799 Mass spectral resolution of F+ and H3O+ in very high vacuum
Cole CR, Outlaw RA, Champion RL, Baker DH, Holloway BC
1800 - 1801 Infrared spectrometer attachment assembly for use with vacuum and high-pressure cells
Wingrave JA, Teplyakov AV