L5 - L9 |
Electrical characteristics of ZrO2 prepared by electrochemical anodization of Zr in an ammonium tartrate electrolyte Jeon SH, Hwang HS |
L10 - L12 |
Titanium alloy material with very low outgassing Kurisu H, Muranaka T, Wada N, Yamamoto S, Matsuura M, Hesaka M |
L13 - L15 |
Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AIN subcycles in atomic layer deposition Lee YJ, Kang SW |
L16 - L18 |
Atomic layer deposition of zirconium silicate films using zirconium tetra-tert-butoxide and silicon tetrachloride Kim WK, Kang SW, Rhee SW |
L19 - L21 |
Metrology of 1-10 nm thick CNx films: Thickness, density, and surface roughness measurements Li DJ, Chen YF, Chung YW, Freire FL |
1589 - 1594 |
Real-time etching monitor using argon quadrupole mass spectrometry for 100 nm class WSiN gate fabrication Jin Y, Takahashi C, Ono T |
1595 - 1602 |
Preparation and characterization of superhard boron-suboxide films Huang H, Ong CW, Zheng B, Kwok RWM, Lau WM, He JW |
1603 - 1608 |
Properties of Au and Ag Schottky diodes prepared on undoped n-ZnO Polyakov AY, Smirnov NB, Kozhukhova EA, Vdovin VI, Ip K, Norton DP, Pearton SJ |
1609 - 1615 |
Deposition pressure dependence of internal stress in TiN films deposited by filtered cathodic vacuum arc Cheng YH, Tay BK |
1616 - 1619 |
Etch characteristics of (Pb,Sr)TiO3 thin films using CF4/Ar inductively coupled plasma Kim GH, Kim KT, Kim DP, Kim CI |
1620 - 1624 |
Surface reaction of bis(tertbutylimido)bis(diethylamido)tungsten precursor on Si(100)-(2X1) Wu JB, Yang YW, Lin YF, Chiu HT |
1625 - 1630 |
X-ray photoelectron spectroscopy and secondary electron yield analysis of Al and Cu samples exposed to an accelerator environment Rosenberg RA, McDowell MW, Ma Q, Harkay KC |
1631 - 1634 |
Ultrathin copper aluminum and nickel aluminide protective oxidation studied with an x-ray photoelectron spectrometer Moore JF, McCann MP, Pellin MJ, Zinovev A, Hryn JN |
1635 - 1638 |
Corrosion behavior of sputter-deposited TiN thin films Martin-Palma RJ, Manso M, Martinez-Duart JM, Conde A, Damborenea JJ |
1639 - 1643 |
The role of trapped Ar atoms in the mechanical properties of boron carbide films deposited by dc-magnetron sputtering Jacobsohn LG, Averitt RD, Nastasi M |
1644 - 1648 |
Method to characterize the three-dimensional distribution of focused ion beam induced damage in silicon after 50 keV Ga+ irradiation Lugstein A, Brezna W, Hobler G, Bertagnolli E |
1649 - 1654 |
Optimization of secondary ion mass spectrometry detection limit for N in SiC Pivovarov AL, Stevie FA, Griffis DP, Guryanov GM |
1655 - 1664 |
Oxygenated polymeric thin films deposited from toluene and oxygen by remote plasma enhanced chemical vapor deposition Barranco A, Cotrino J, Yubero F, Gonzalez-Elipe AR |
1665 - 1670 |
Influence of the incident angle of energetic carbon ions on the properties of tetrahedral amorphous carbon (ta-C) films Liu DP, Benstetter G, Lodermeier E, Vancea J |
1671 - 1674 |
Focusing of MeV ion beams by means of tapered glass capillary optics Nebiki T, Yamamoto T, Narusawa T, Breese MBH, Teo EJ, Watt F |
1675 - 1679 |
Plasma load characteristics of pulsed-bias arc ion plating Lin GQ, Ding ZF, Qi D, Zhao YH, Wang NH, Dong C, Huang RF, Wen LS |
1680 - 1682 |
Reaction between nitrogen gas and silicon species during pulsed laser ablation Umezu I, Inada M, Kohno K, Yamaguchi T, Makino T, Sugimura A |
1683 - 1687 |
Investigation of interactions between inert gases and nitrogen in direct current triode discharges Davison A, Avelar-Batista JC, Wilson AD, Leyland A, Matthews A, Fancey KS |
1688 - 1701 |
Mechanisms for deposition and etching in fluorosilane plasma processing of silicon Williams KL, Butoi CI, Fisher ER |
1702 - 1707 |
X-ray diffraction analyses of titanium coatings produced by electron beam evaporation in neon and argon inert gases Avelar-Batista JC, Wilson AD, Davison A, Matthews A, Fancey KS |
1708 - 1716 |
Study of C4F8/N-2 and C4F8/Ar/N-2 plasmas for highly selective organosilicate glass etching over Si3N4 and SiC Hua XF, Wang X, Fuentevilla D, Oehrlein GS, Celii FG, Kirmse KHR |
1717 - 1723 |
Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation Li TQ, Noda S, Komiyama H, Yamamoto T, Ikuhara Y |
1724 - 1733 |
Measurements of neutral plasma species in an argon/isopropyl alcohol plasma for the deposition of organic films Guerin DC, Fernsler RF, Shamamian VA |
1734 - 1738 |
Observation of the phase formation in Fe-N films deposited by reactive pulsed laser deposition Wang N, Ulmer KM, Constant AP, Anderegg JW, Snyder JE |
1739 - 1744 |
Damage effects from medium-energy ion bombardment during the growth of cubic-boron nitride films Gago R, Vinnichenko M, Abendroth B, Kolitsch A, Moller W |
1745 - 1751 |
Composition control and dielectric properties of bismuth zinc niobate thin films synthesized by radio-frequency magnetron sputtering Lu JW, Chen ZQ, Taylor TR, Stemmer S |
1752 - 1757 |
Evidences for dry deintercalation in layered compounds upon controlled surface charging in x-ray photoelectron spectroscopy Feldman Y, Zak A, Tenne R, Cohen H |
1758 - 1764 |
Structural and electrical characteristics of the interfacial layer of ultrathin ZrO2 films on partially strain compensated Si0.69Ge0.3C0.01 layers Mahapatra R, Maikap S, Lee JH, Kar GS, Dhar A, Kim DY, Bhattacharya D, Ray SK |
1765 - 1769 |
Measurement of charge-separation potentials in GaAs1-xNx Johnston SW, Ahrenkiel RK, Tu CW, Hong YG |
1770 - 1775 |
Photoinduced anisotropy of second-harmonic generation from azobenzene-modified alkylsiloxane monolayers Yi YW, Furtak TE, Farrow MJ, Walba DM |
1776 - 1783 |
Photodesorption of gases in vacuum glazing Ng N, Collins RE, So L |
1784 - 1790 |
Fluorinated amorphous carbon films prepared by plasma enhanced chemical vapor deposition for solar cell applications Valentini L, Salerni V, Armentano I, Kenny JM, Lozzi L, Santucci S |
1791 - 1795 |
Influence of sputtering conditions on microstructure and mechanical properties of Zr-Si-N films prepared by radio-frequency-reactive sputtering Zhou M, Nose M, Deguchi Y, Mae T, Nogi K |
1796 - 1799 |
Mass spectral resolution of F+ and H3O+ in very high vacuum Cole CR, Outlaw RA, Champion RL, Baker DH, Holloway BC |
1800 - 1801 |
Infrared spectrometer attachment assembly for use with vacuum and high-pressure cells Wingrave JA, Teplyakov AV |