| 1317 - 1335 |
Glancing angle deposition: Fabrication, properties, and applications of micro- and nanostructured thin films
Hawkeye MM, Brett MJ |
| 1336 - 1340 |
Impact of yttrium on structure and mechanical properties of Cr-Al-N thin films
Rovere F, Mayrhofer PH |
| 1341 - 1350 |
Laterally resolved ion-distribution functions at the substrate position during magnetron sputtering of indium-tin oxide films
Plagernann A, Ellmer K, Wiesemann K |
| 1351 - 1356 |
Surface dipole formation and lowering of the Work function by Cs adsorption on InP(100) surface
Sun Y, Liu Z, Pianetta P |
| 1357 - 1366 |
Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
Heil SBS, van Hemmen JL, Hodson CJ, Singh N, Klootwijk JH, Roozeboom F, de Sanden MCMV, Kessels WMM |
| 1367 - 1372 |
CrNx and Cr1-xAlxN as template films for the growth of alpha-alumina using ac reactive magnetron sputtering
Pulugurtha SR, Hat DG, Gordon MH |
| 1373 - 1380 |
Performance characterization of nonevaporable porous Ti getter films
Li CC, Huang JL, Lin RJ, Lii DF, Chen CH |
| 1381 - 1388 |
Magnetron sputtering of Ti3SiC2 thin films,from a compound target
Eklund P, Beckers M, Frodelius J, Hogberg H, Hultman L |
| 1389 - 1394 |
In situ attenuated total reflectance Fourier transform infrared spectroscopy of hafnium(IV) tert butoxide adsorption onto hydrogen terminated Si(100) and Si(111)
Li K, Dubey S, Bhandari HB, Hu Z, Turner CH, Klein TM |
| 1395 - 1401 |
Angular dependence Of Si3N4 etch rates and the etch selectivity Of SiO2 to Si3N4 at different bias voltages in a high-density C4F8 plasma
Lee JK, Lee GR, Min JH, Moon SH |
| 1402 - 1406 |
Thermal stability of sputtered intermetallic Al-Au coatings
Moser M, Mayrhofer PH, Ross IM, Rainforth WM |
| 1407 - 1410 |
Annealing behavior and hardness enhancement of amorphous SiCN thin films
Ma SL, Xu B, Xu KW, Wu XL, Chu PK |
| 1411 - 1416 |
Bonding statistics and electronic structure of novel Si-B-C-N materials: Ab initio calculations and experimental verification
Houska J, Capek J, Vlcek J, Bilek MMM, McKenzie DR |
| 1417 - 1419 |
Molecular dynamics simulations of 30 and 2 keV Ga in Si
Giannuzzi LA, Garrison BJ |
| 1420 - 1432 |
Modeling of magnetically enhanced capacitively coupled plasma sources: Two frequency discharges
Yang Y, Kushner MJ |
| 1433 - 1437 |
Characterization of Ce-Pd(111) and Ce-Pd(110) surface alloys
Tollefsen H, Berstad LJ, Raaen S |
| 1438 - 1448 |
Growth stress buildup in ion beam sputtered Mo thin films and comparative study of stress relaxation upon thermal annealing or ion irradiation
Debelle A, Abadias G, Michel A, Jaouen C, Pelosin V |
| 1449 - 1455 |
Early morphological changes on Si(111) surfaces during UHV processing
Ignatescu V, Blakely JM |
| 1456 - 1474 |
Capacitive discharges driven by combined dc/rf sources
Kawamura E, Lieberman MA, Lichtenberg AJ, Hudson EA |
| 1475 - 1479 |
Design and test of a magnetic shield for turbomolecular pumps
De Angeli M, Gervasini G, Gittini G |
| 1480 - 1483 |
Room-temperature ultrahigh vacuum bonding of Ge/GaAs p-n heterojunction wafer using 300 eV hydrogen ion beam surface cleaning
Razek N, Schindler A |
