1101 - 1108 |
Magnetron sputtered Si-B-C-N films with high oxidation resistance and thermal stability in air at temperatures above 1500 degrees C Vlcek J, Hreben S, Kalas J, Capek J, Zeman P, Cerstvy R, Perina V, Setsuhara Y |
1109 - 1114 |
Investigation of the suppression effect of polyethylene glycol on copper electroplating by electrochemical impedance spectroscopy Hung CC, Lee WH, Wang YL, Chan DY, Hwang GJ |
1115 - 1119 |
Silane injection in a high-density low-pressure plasma system and its influence on the deposition kinetics and material properties of SiO2 Botha R, Ibrahim BH, Bulkin P, Drevillon B |
1120 - 1127 |
Low energy secondary ion mass spectrometry with sub-keV O-2(+) beams at glancing incidence Jiang ZX, Kim K, Guenther T, Robichaud B, Benavides J, Contreras L, Sieloff DD |
1128 - 1137 |
Measurement of reactive and condensable gas permeation using a mass spectrometer Zhang XD, Lewis JS, Parker CB, Glass JT, Wolter SD |
1138 - 1148 |
Identification and quantification of iron silicide phases in thin films Miquita DR, Gonzalez JC, da Silva MIN, Rodrigues WN, Moreira MVB, Paniago R, Ribeiro-Andrade R, Magalhaes-Paniago R, Pfannes HD, de Oliveira AG |
1149 - 1153 |
Structure and mechanical properties of diamondlike carbon films produced by hollow-cathode plasma deposition Jiang HF, Tian XB, Yang SQ, Fu RKY, Chu PK |
1154 - 1160 |
Wafer heating mechanisms in a molecular gas, inductively coupled plasma: in situ, real time wafer surface measurements and three-dimensional thermal modeling Titus MJ, Graves DB |
1161 - 1165 |
Capillary flow meter for calibrating spinning rotor gauges Berg RF |
1166 - 1171 |
Reduction in hydrogen outgassing from stainless steels by a medium-temperature heat treatment Park CD, Chung SM, Liu XH, Li YL |
1172 - 1177 |
Trench profile angle beveling Chen H, Wang Q |
1178 - 1181 |
Ferroelectric properties of Bi3.25La0.75Ti3O12 films using HfO2 as buffer layers for nonvolatile-memory field-effect transistors Kim KT, Kim GH, Woo JC, Kim CI |
1182 - 1187 |
Cyclic, cryogenic, highly anisotropic plasma etching of silicon using SF6/O-2 Isakovic AF, Evans-Lutterodt K, Elliott D, Stein A, Warren JB |
1188 - 1194 |
Influence of N-2 gas pressure and negative bias voltage on the microstructure and properties of Cr-Si-N films by a hybrid coating system Wang QM, Park IW, Kim K |
1195 - 1197 |
Enhanced chemical immunity for negative electron affinity GaAs photoemitters Mulhollan GA, Bierman JC |
1198 - 1207 |
Study of fluorocarbon plasma in 60 and 100 MHz capacitively coupled discharges using mass spectrometry Ushakov A, Volynets V, Jeong S, Sung D, Ihm Y, Woo J, Han M |
1208 - 1212 |
On the phase identification of dc magnetron sputtered Pt-Ru alloy thin films Warren AP, Todi RM, Yao B, Barmak K, Sundaram KB, Coffey KR |
1213 - 1217 |
Enhancement of metal oxide deposition rate and quality using pulsed plasma-enhanced chemical vapor deposition at low frequency Seman MT, Richards DN, Rowlette PC, Kubala NG, Wolden CA |
1218 - 1223 |
Origin of hydrogen desorption during friction of stainless steel by alumina in ultrahigh vacuum Nevshupa RA, Roman E, de Segovia JL |
1224 - 1234 |
Two-silane chemical vapor deposition treatment of polymer, (nylon) and oxide surfaces that yields hydrophobic, (and superhydrophobic), abrasion-resistant thin films Saini G, Sautter K, Hild FE, Pauley J, Linford MR |
1235 - 1240 |
Growth and interface of HfO2 films on H-terminated Si from a TDMAH and H2O atomic layer deposition process Hackley JC, Demaree JD, Gougousi T |
1241 - 1247 |
Unique lack of chemical reactivity for 2,3-dimethyl-2-butene on a Si(100)-2X1 surface Madachik MR, Teplyakov AV |
1248 - 1250 |
The effectiveness of HCl and HF cleaning of Si0.85Ge0.15 surface Sun Y, Liu Z, Sun SY, Pianetta P |
1251 - 1257 |
Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition Liu JR, Martin RM, Chang JP |
1258 - 1266 |
Effect of negative bias voltage on CrN films deposited by arc ion plating. I. Macroparticles filtration and film-growth characteristics Wang QM, Kim KH |
1267 - 1276 |
Effect of negative bias voltage on CrN films deposited by arc ion plating. II. Film composition, structure, and properties Wang QM, Kim KH |
1277 - 1281 |
Pulsed dc self-sustained magnetron sputtering Wiatrowski A, Posadowski WM, Radzimski ZJ |
1282 - 1286 |
Feedback control of HfO2 etch processing in inductively coupled Cl-2/N-2/Ar plasmas Lin C, Leou KC, Li TC, Lee LS, Tzeng PJ |
1287 - 1292 |
Growth and ellipsometric characterizations of highly (111)-oriented Bi2Ti2O7 films on platinized silicon by metal organic decomposition method Hu ZG, Li YW, Zhu M, Yue FY, Zhu ZQ, Chu JH |
1293 - 1299 |
Deterioration of seal reliability due to noncoaxial arrangement of ConFlat type flanges and gasket Kurokouchi S |
1300 - 1307 |
Plasma-assisted molecular beam epitaxy and characterization of SnO2 (101) on r-plane sapphire White ME, Tsai MY, Wu F, Speck JS |
1308 - 1313 |
Increased O(D-1) metastable flux with Ar and Kr diluted oxygen plasmas and improved film properties of grown SiO2 film Kitajimaa T, Nakano T, Makabe T |
1314 - 1318 |
Synthesis of nanoscale CNx/TiAlN multilayered coatings by ion-beam-assisted deposition Cao M, Li DJ, Deng XY, Sun X |
1319 - 1325 |
Test particle Monte Carlo study of the cryogenic pumping system of the Karlsruhe tritium neutrino experiment Luo X, Day C |
1326 - 1330 |
Contribution of statistical time delay and formative time to total electrical breakdown time delay in argon for different afterglow periods Pejovic MM, Pejovic MM |
1331 - 1335 |
Local supply of gas in vacuum: Application to a field ion source Descoins M, Hammadi Z, Morin R |
1336 - 1342 |
Real-time scanning tunneling microscopy observations of the oxidation of a Ti/Pt(111)-(2x2) surface alloy using O-2 and NO2 Hsieh S, Liu GF, Koel BE |
1343 - 1354 |
Ultralow k films by using a plasma-enhanced chemical vapor deposition porogen approach: Study of the precursor reaction mechanisms Castex A, Jousseaume V, Deval J, Bruat J, Favennec L, Passemard G |
1355 - 1356 |
Bayard-Alpert ionization gauge sensitivity for C7F14 Kim SH, Heinrich JR, Miller MJ, Merlino RL |
1357 - 1361 |
Investigation of a vapor deposited thin silica film as a novel substrate for in situ Fourier transform infrared spectroscopy Anderson A, Ashurst WR |
1362 - 1363 |
Comment on "CrNx and Cr1-xAlxN as template films for the growth of alpha-alumina using ac reactive magnetron sputtering," [J. Vac. Sci. Technol. A 25, 1367, 2007] Khanna A |