| 2983 - 2993 |
Current Capabilities and Limitations of in-Situ Particle Monitors in Silicon Processing Equipment
Takahashi KM, Daugherty JE |
| 2994 - 3003 |
Reactive Ion Etching of Silica Structures for Integrated-Optics Applications
Bazylenko MV, Gross M |
| 3004 - 3009 |
Effect of Supplied Substrate Bias Frequency in Ultrahigh-Frequency Plasma Discharge for Precise Etching Processes
Samukawa S, Ohtake H, Tsukada T |
| 3010 - 3016 |
Etching Characteristics of Tin Oxide Thin-Films in Argon-Chlorine Radio-Frequency Plasmas
Maguire P, Molloy J, Laverty SJ, Mclaughlin J |
| 3017 - 3023 |
Integrated Processing of Silicon Oxynitride Films by Combined Plasma and Rapid-Thermal Processing
Hattangady SV, Niimi H, Lucovsky G |
| 3024 - 3032 |
Ion-Surface Interactions in Low-Temperature Silicon Epitaxy by Remote Plasma-Enhanced Chemical-Vapor-Deposition
Habermehl S, Lucovsky G |
| 3033 - 3038 |
The Radio-Frequency Hollow-Cathode Plasma-Jet Arc for the Film Deposition
Barankova H, Bardos L, Berg S |
| 3039 - 3042 |
Generation of an Electron-Cyclotron-Resonance Plasma Using Coaxial-Type Open-Ended Dielectric Cavity with Permanent-Magnets
Kimura T, Okazaki Y |
| 3043 - 3048 |
Self-Thickness-Limited Plasma Polymerization of an Ultrathin Antiadhesive Film
Groning P, Schneuwly A, Schlapbach L, Gale MT |
| 3049 - 3058 |
Pulse-Time-Modulated Electron-Cyclotron-Resonance Plasma Discharge for Highly Selective, Highly Anisotropic, and Charge-Free Etching
Samukawa S, Ohtake H, Mieno T |
| 3059 - 3064 |
Electric-Field Control of Plasma and Macroparticles in Cathodic Arc Deposition as a Practical Alternative to Magnetic-Fields in Ducts
Yin Y, Mckenzie DR |
| 3065 - 3070 |
Surface-Wave Operation Mode of the Slot Antenna Microwave Plasma Source Slan
Werner F, Korzec D, Engemann J |
| 3071 - 3074 |
Measurements of Spatial and Temporal Sheath Evolution Inside Tubular Material for Inner Surface Ion-Implantation
Sun M, Yang SZ, Chen XC |
| 3075 - 3081 |
Oxygen Plasma Asher Contamination - An Analysis of Sources and Remedies
Synowicki RA, Hale JS, Mcgahan WA, Ianno NJ, Woollam JA |
| 3082 - 3086 |
Ashing Residues on Tin Antireflective Coating Layers
Miyaji S, Kato T, Yamauchi T |
| 3087 - 3091 |
Sputtering of Metallic Walls in Ar/H-2 Direct-Current Glow-Discharges at Room-Temperature
Tabares FL, Tafalla D |
| 3092 - 3099 |
Effect of Nonstoichiometry upon Optical-Properties of Radio-Frequency Sputtered Al-N Thin-Films Formed at Various Sputtering Pressures
Wang DY, Nagahata Y, Masuda M, Hayashi Y |
| 3100 - 3107 |
Low-Temperature Deposition of Cubic BN-C Films by Unbalanced Direct-Current Magnetron Sputtering of a B4C Target
Johansson MP, Ivanov I, Hultman L, Munger EP, Schutze A |
| 3108 - 3123 |
Monte-Carlo Numerical-Analysis of Target Erosion and Film Growth in a 3-Dimensional Sputtering Chamber
Serikov VV, Nanbu K |
| 3124 - 3129 |
Reactive Magnetron Sputter-Deposition of Polycrystalline Vanadium Nitride Films
Chu X, Barnett SA, Wong MS, Sproul WD |
| 3130 - 3134 |
Laser-Desorption Study of Deuterium Implanted in Silicon-Carbide
Keroack D, Terreault B |
| 3135 - 3143 |
Chemical Bonding and Electronic-Properties of Se-Rich ZnSe-GaAs(001) Interfaces
Bratina G, Ozzello T, Franciosi A |
| 3144 - 3146 |
Formation of Titanium Nitride Coatings by Nitrogen Plasma Immersion Ion-Implantation of Evaporated Titanium Films
Hartmann J, Ensinger W, Koniger A, Stritzker B, Rauschenbach B |
| 3147 - 3155 |
Optical-Emission Spectroscopy from Arc-Like Ti Vapor Plasma and Effects of Self-Ion Bombardment on Ti and Tin Film Deposition
Kajioka H, Higuchi K, Kawashimo Y |
| 3156 - 3163 |
In-Situ Study of Processes Taking Place on Silicon Surface During Its Bombardment by Cfx/Ar Ions - Etching Versus Polymerization
Sikola T, Armour DG, Vandenberg JA |
| 3164 - 3168 |
Influence of Surface Oxygen on Chemoresistance of Tin Oxide Film
Kaciulis S, Mattogno G, Galdikas A, Mironas A, Setkus A |
| 3169 - 3173 |
Study on the Interfaces of Cu/Pa-N and Pa-N/Si by Secondary-Ion Mass-Spectroscopy and Scanning Electron-Microscopy
Yang GR, Mathur D, Mcdonald JF, Lu TM |
| 3174 - 3180 |
High-Resolution Electron-Energy-Loss Spectroscopy Study of Vapor-Deposited Pyromellitic Dianhydride and Oxydianiline Films on Cu(110)
Plank RV, Dinardo NJ, Vohs JM |
| 3181 - 3188 |
Dielectric-Properties of Zr, Zrn, Zr3N4, and ZrO2 Determined by Quantitative-Analysis of Electron-Energy-Loss Spectra
Prieto P, Yubero F, Elizalde E, Sanz JM |
| 3189 - 3193 |
Effect of a Vacuum Ion Gauge on the Contamination of a Hydrogen-Passivated Silicon Surface
Yun SJ, Lee SC, Lee JJ, Lee JY |
| 3194 - 3201 |
Argon Plasma Treatment of Polycarbonate - In-Situ Spectroellipsometry Study and Polymer Characterizations
Vallon S, Drevillon B, Poncinepaillard F, Klembergsapieha JE, Martinu L |
| 3202 - 3207 |
In-Situ Composition Monitoring of InGaAs/InP Using Quadrupole Mass-Spectrometry
Celii FG, Kao YC, Liu HY |
| 3208 - 3213 |
Schiff-Base Precursor Compounds for the Chemical Beam Epitaxy of Oxide Thin-Films .1. Deposition of CuO on MgO(001) Using Copper(II) bis(Benzoylacetone)-Ethylendiimine
Fritsch E, Machler E, Arrouy F, Berke H, Povey I, Willmott PR, Locquet JP |
| 3214 - 3219 |
Growth-Behavior of Copper Metalorganic Chemical-Vapor-Deposition Using the (Hfac)Cu(Vtmos) Precursor on Titanium Nitride Substrates
Jun CH, Kim YT, Baek JT, Yoo HJ, Kim DR |
| 3220 - 3223 |
Molecular-Beam Epitaxy Growth of CdTe on (211)A GaAs
Yin JJ, Huang Q, Zhou JM, Yin JG |
| 3224 - 3227 |
Process-Property Relationships Between Silicon Selective Epitaxial-Growth Ambients and Degradation of Insulators
Gaynor W, Takoudis CG, Neudeck GW |
| 3228 - 3235 |
Aspects of Nitrogen Surface-Chemistry Relevant to Tin Chemical-Vapor-Deposition
Schulberg MT, Allendorf MD, Outka DA |
| 3236 - 3244 |
Formation of Metastable Epitaxial Cosix (X-Less-Than-2) Layers by Reactive Codeposition on CoSi2(111)
Hong S, Wetzel P, Gewinner G, Pirri C |
| 3245 - 3251 |
Tin Barrier Layer Formation by the 2-Step Rapid Thermal-Conversion Process
Kim YT, Jun CH, Lee JH, Baek JT, Joun H |
| 3252 - 3255 |
Vacuum-Arc Deposition of Mo Films
Vershinin N, Straumal B, Gust W |
| 3256 - 3260 |
Simulation-Model to Very-Low Pressure Chemical-Vapor-Deposition of SiGe Alloy
Gu SL, Wang RH, Zhang R, Zheng YD |
| 3261 - 3266 |
Reduction of Outgassing Rate from Residual-Gas Analyzers for Extreme High-Vacuum Measurements
Watanabe S, Aono M, Kato S |
| 3267 - 3274 |
Measurements of Tritium Retention and Removal on the Tokamak Fusion Test Reactor
Skinner CH, Blanchard W, Kamperschroer J, Lamarche P, Mueller D, Nagy A, Scott S, Ascione G, Amarescu E, Camp R, Casey M, Collins J, Cropper M, Gentile C, Gibson M, Hosea J, Kalish M, Langford J, Langish S, Mika R, Owens DK, Pearson G, Raftopoulos S, Raucci R, Stevenson T, Vonhalle A, Voorhees D, Walters T, Winston J |
| 3275 - 3277 |
Vacuum Performance of the Synchrotron-Radiation Research-Center 1.3 GeV Synchrotron Light-Source
Hsiung GY, Huang JR, Shyy JG, Wang DJ, Chen JR, Liu YC |
| 3278 - 3282 |
Pumping Characteristics of the St707 Nonevaporable Getter (Zr70V24.6-Fe5.4Wt-Percent)
Benvenuti C, Chiggiato P |
| 3283 - 3287 |
Improved Substrate-Temperature Stability During Molecular-Beam Epitaxy Growth Using Indium Free Mounting of Small Substrates of Various Shapes
Sieg RM, Sacks RN, Grillot PN, Ringel SA |
| 3288 - 3290 |
Simple Setup Combining Ferromagnetic-Resonance and Surface Magnetooptic Kerr-Effect for Measurements of Magnetic-Properties of Ultrathin Films in Ultrahigh-Vacuum
Li M, Wang GC |
| 3291 - 3291 |
Scanning Force Microscopy and Polymerization Studies on Cast Thin-Films of Hectorite and Montmorillonite (Vol 14, Pg 1488, 1996)
Porter TL, Eastman MP, Hagerman ME, Attuso JL, Bain ED |
| 3291 - 3291 |
Fluorocarbon High-Density Plasmas .7. Investigation of Selective SiO2-to-Si3N4 High-Density Plasma Etch Processes (Vol 14, Pg 2127, 1996)
Zhang Y, Oehrlein GS, Bell FH |
