Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.16, No.6 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (63 articles)

3157 - 3163	Dissociation processes in plasma enhanced chemical vapor deposition of SiO2 films using tetraethoxysilane Okimura K, Maeda N
3164 - 3169	Characterization of a novel lambda balanced inductive plasma source Vinogradov GK, Menagarishvili VM, Yoneyama S
3170 - 3174	Synthesis of diamond using a low pressure, radio frequency, inductively coupled plasma Noda H, Nagai H, Shimakura M, Hiramatsu M, Nawata M
3175 - 3184	Deposition of SiO2 films from novel alkoxysilane/O-2 plasmas Bogart KHA, Ramirez SK, Gonzales LA, Bogart GR, Fisher ER
3185 - 3189	Diamond synthesis in capacitively coupled 13.56 MHz radio frequency plasma using parallel plate electrodes with the addition of direct current power Asakura Y, Chattopadhyay KK, Matsumoto S, Hirakuri K
3190 - 3198	Transparent barrier coatings on polyethylene terephthalate by single- and dual-frequency plasma-enhanced chemical vapor deposition Sobrinho ASD, Latreche M, Czeremuszkin G, Klemberg-Sapieha JE, Wertheimer MR
3199 - 3210	Silicon hydride composition of plasma-deposited hydrogenated amorphous and nanocrystalline silicon films and surfaces Marra DC, Edelberg EA, Naone RL, Aydil ES
3211 - 3217	Effect of hydrogen dilution on the remote plasma enhanced chemical vapor deposition of chlorinated SiO2 films Alonso JC, Vazquez R, Ortiz A, Pankov V, Andrade E
3218 - 3222	Plasma-enhanced chemical vapor deposition of intrinsic microcrystalline silicon from chlorine-containing source gas Platz R, Wagner S
3223 - 3226	Effects of ion pretreatments on the nucleation of silicon on silicon dioxide Basa C, Hu YZ, Tinani M, Irene EA
3227 - 3234	Structure of the interfacial region between polycarbonate and plasma-deposited SiN1.3 and SiO2 optical coatings studied by ellipsometry Bergeron A, Klemberg-Sapieha JE, Martinu L
3235 - 3239	Positive ion species in high-density discharges containing chlorine and boron-trichloride Woodworth JR, Nichols CA, Hamilton TW
3240 - 3246	Optical self-absorption technique for qualitative measurement of excited-state densities in plasma reactors Miller PA, Hebner GA, Jarecki RL, Ni T
3247 - 3258	Effects of plasma conditions on the shapes of features etched in Cl-2 and HBr plasmas. I. Bulk crystalline silicon etching Vyvoda MA, Lee H, Malyshev MV, Klemens FP, Cerullo M, Donnelly VM, Graves DB, Kornblit A, Lee JTC
3259 - 3265	Surface reaction mechanisms of trifluoracetylacetone on clean and pre-oxidized Ni(110) : An example where etching chemistry does not follow volatility trends Nigg HL, Masel RI
3266 - 3273	Laser-induced thermal desorption analysis of the surface during Ge etching in a Cl-2 inductively coupled plasma Choe JY, Herman IP, Donnelly VM
3274 - 3280	Comparison of two-dimensional and three-dimensional models for profile simulation of poly-Si etching of finite length trenches Hoekstra RJ, Kushner MJ
3281 - 3286	Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas : Angular dependence of SiO2 and Si3N4 etching rates Schaepkens M, Oehrlein GS, Hedlund C, Jonsson LB, Blom HO
3287 - 3294	High-rate deposition of cBN films by ion-beam-assisted vapor deposition Sueda M, Kobayashi T, Rokkaku T, Ogawa M, Watanabe T, Morimoto S
3295 - 3300	Preparation of gold thin films by epitaxial growth on mica and the effect of flame annealing Dishner MH, Ivey MM, Gorer S, Hemminger JC, Feher FJ
3301 - 3304	Formation of nanocrystalline NiCr-N films by reactive dc magnetron sputtering Musil J, Regent F
3305 - 3310	Structural, optical and electrical characteristics of yttrium oxide films deposited by laser ablation Araiza JJ, Cardenas M, Falcony C, Mendez-Garcia VH, Lopez M, Contreras-Puente G
3311 - 3313	Surface modification of alpha-Al2O3(0001) by N-2(+) ion irradiation Choi WK, Choi SC, Jung HJ, Koh SK, Byun DJ, Kum DW
3314 - 3327	Modeling surface kinetics and morphology during 3C, 2H, 4H, and 6H-SiC (111) step-flow growth Stout PJ
3328 - 3334	Thermal and electron driven chemistry of CCl4 on oxidized Si(100) Junker KH, White JM
3335 - 3340	Growth of c-axis oriented aluminum nitride films on GaAs substrates by reactive rf magnetron sputtering Cheng CC, Chen YC, Horng RC, Wang HJ, Chen WR, Lai EK
3341 - 3347	Synthesis and characterization of highly textured polycrystalline AlN/TiN superlattice coatings Wang YY, Wong MS, Chia WJ, Rechner J, Sproul WD
3348 - 3351	Influence of residual stress and film thickness on crystallographic orientation in Al thin films deposited by bias sputtering Choi HM, Choi SK
3352 - 3358	Polycrystalline silicon thin films formed by metal-induced solid phase crystallization of amorphous silicon Wang YZ, Awadelkarim OO
3359 - 3365	Fluoropolymer films produced by sputtering using inductively coupled plasma ion source and their organic vapor sorption characteristics Sugimoto I, Hannoe S, Katoh T
3366 - 3375	Epitaxial growth of TiN films by N-implantation into evaporated Ti films Kasukabe Y, Saito N, Suzuki M, Yamada Y, Fujino Y, Nagata S, Kishimoto M, Yamaguchi S
3376 - 3383	Epitaxial growth of Cu on Si by magnetron sputtering Jiang H, Klemmer TJ, Barnard JA, Payzant EA
3384 - 3388	Fabrication and characteristics of rugate filters deposited by the TSH reactive sputtering method Tang Q, Matsuda H, Kikuchi K, Ogura S
3389 - 3395	Ion energy distribution functions in inductively coupled radio-frequency discharges - Mixtures of Cl-2/BCl3/Ar Nichols CA, Woodworth JR, Hamilton TW
3396 - 3401	Electron beam directed vapor deposition of thermal barrier coatings Hass DD, Parrish PA, Wadey HNG
3402 - 3407	Generation of atomically flat MgO(100) surfaces : Influence of ambient gas composition during high temperature anneals Perry SS, Kim HI, Imaduddin S, Lee SM, Merrill PB
3408 - 3413	Effects of substrate temperature on the laser damage threshold of sputtered SiO2 films Alvisi M, De Nunzio G, Ferrara MC, Perrone MR, Rizzo A, Scaglione S, Vasanelli L
3414 - 3419	Chemical alteration of the native oxide layer on LiGaO2(001) by exposure to hyperthermal atomic hydrogen Wolan JT, Hoflund GB
3420 - 3422	Growth of high-temperature NiTi1-xHfx shape memory alloy thin films by laser ablation of composite targets Gu HD, Leung KM, Chung CY
3423 - 3433	Study of thin film deposition processes employing variable kinetic energy, highly collimated neutral molecular beams Roadman SE, Maity N, Carter JN, Engstrom JR
3434 - 3437	Determination of the atomic nitrogen flux from a radio frequency plasma nitride source for molecular beam epitaxy systems Voulot D, McCullough RW, Thompson WR, Burns D, Geddes J, Cosimini GJ, Nelson E, Chow PP, Klaassen J
3438 - 3442	Stable anionic sites on hydrogenated (111) surfaces of cubic boron nitride resulting from hydrogen atom removal under chemical vapor deposition conditions Komatsu S, Okada K, Moriyoshi Y
3443 - 3448	Blue CuxS coated ZnS : Ag,Cl phosphor as potential field emission display material Yang SH, Yokoyama M
3449 - 3454	Investigation of electron induced damaging of molecular overlayers by imaging static secondary ion mass spectroscopy Rading D, Liebing V, Becker G, Fuchs H, Benninghoven A
3455 - 3459	Soft x-ray-stimulated positive ion desorption from amorphous SiO2 surfaces Akazawa H
3460 - 3463	Dimer chain patterns during submonolayer growth of silicon on Si(100) Iguain JL, Martin HO, Aldao CM, Gong Y, Chey SJ, Weaver JH
3464 - 3470	Surface conductivity induced electron field emission from an indium cluster sitting on a diamond surface Kuttel OM, Groening O, Schlapbach L
3471 - 3476	Angular-resolved valence-band spectroscopy of different reconstructed 3C-SiC (001) surfaces Lubbe M, Lindner K, Sloboshanin S, Tautz S, Schafer J, Zahn DRT
3477 - 3482	Optical properties and electron spectroscopy characterization of AlxTiyOz thin films Yubero F, Stabel A, Gonzalez-Elipe AR
3483 - 3489	Surface charge neutralization of insulating samples in x-ray photoemission spectroscopy Larson PE, Kelly MA
3490 - 3494	Quantitative determination of dielectric thin-film properties on product wafers using infrared reflection-absorption spectroscopy Niemczyk TM, Zhang LZ, Haaland DM, Radigan KJ
3495 - 3501	Concept of the transmission conductance In SR
3502 - 3514	Molecular dynamics simulations of Ar+ and Cl+ impacts onto silicon surfaces : Distributions of reflected energies and angles Helmer BA, Graves DB
3515 - 3520	Synthesis and characterization of nickel sulfide catalysts Olivas A, Cruz-Reyes J, Petranovskii V, Avalos M, Fuentes S
3521 - 3525	Observation of the reaction of gas-phase atomic oxygen with Ru(001)-p(1x1)-D at 80 K Weiss MJ, Hagedorn CJ, Weinberg WH
3526 - 3535	Microstructure and bulk reactivity of the nonevaporable getter Zr57V36Fe7 Gunter MM, Herein D, Schumacher R, Weinberg G, Schlogl R
3536 - 3553	Nonlinear modeling, identification, and feedback control design for the modern effusion cell Tucker MK, Meyer DG
3554 - 3558	Tribological properties of diamond-like carbon films deposited by negative carbon ion beam Sohn MH, Ahn YO, Ko YW, Hah SR, Fischer TE, Kim SI
3559 - 3563	Design of a new sensor for mass flow controller using thin-film technology based on an analytical thermal model Rudent P, Navratil P, Giani A, Boyer A
3564 - 3568	Physical characterization of hafnium oxide thin films and their application as gas sensing devices Capone S, Leo G, Rella R, Siciliano P, Vasanelli L, Alvisi M, Mirenghi L, Rizzo A
3569 - 3577	Some investigations on the effective short time outgassing depth of metals Schindler N, Riemann T, Edelmann C
3578 - 3581	Lattice curvature of InxGa1-xAs/GaAs [001] graded buffer layers Romanato F, Natali M, Napolitani E, Drigo AV, Bosacchi A, Ferrari C, Franchi S, Salviati G
3582 - 3582	Investigation of ice-solid interfaces by force microscopy : Plastic flow and adhesive forces (vol 16, pg 1832, 1998) Pittenger B, Cook DJ, Slaughterbeck CR, Fain SC