Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.20, No.6 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (50 articles)

1835 - 1839	Mass spectrometric studies of low pressure CH4, CH4/H-2, and H-2 plasma beams generated by an inductively coupled radio frequency discharge Okada K, Komatsu S
1840 - 1845	Investigation of the hydrogenation properties of Zr films under unclean plasma conditions Shi LQ, Yan GQ, Zhou JY, Luo SZ, Peng SM, Ding W, Long XG
1846 - 1849	Electron emission suppression characteristics of molybdenum grids coated with carbon film by ion beam assisted deposition Liu XG, Ren C, Jiang BY, Zhu H, Liu YY, Wu JX
1850 - 1854	Investigation and simulation of XeF2 isotropic etching of silicon Bahreyni B, Shafai C
1855 - 1859	Quantitative analysis of annealing-induced structure disordering in ion-implanted amorphous silicon Cheng JY, Gibson JM, Baldo PM, Kestel BJ
1860 - 1866	Thermal stability of Pr2O3 films grown on Si(100) substrate Goryachko A, Liu JP, Kruger D, Osten HJ, Bugiel E, Kurps R, Melnik V
1867 - 1876	Angle-resolved x-ray photoelectron spectroscopy of ultrathin Al2O3 films grown by atomic layer deposition Renault O, Gosset LG, Rouchon D, Ermolieff A
1877 - 1885	Investigation of thermal flux to the substrate during sputter deposition of aluminum Ekpe SD, Dew SK
1886 - 1890	Structural and luminescent properties of ZnTe film grown on silicon by metalorganic chemical vapor deposition Shan CX, Fan XW, Zhang JY, Zhang ZZ, Wang XH, Ma JG, Lu YM, Liu YC, Shen DZ, Kong XG, Zhong GZ
1891 - 1897	Wet chemical etching studies of Zr and Hf-silicate gate dielectrics Quevedo-Lopez MA, El-Bouanani M, Wallace RM, Gnade BE
1898 - 1902	A biaxial rotation for depositing homogeneous large-area double-sided YBa2Cu3O7-x thin films Tao BW, Li YR, Liu XZ, He SM, Geerk J
1903 - 1910	Thermal reaction of nickel and Si0.75Ge0.25 alloy Pey KL, Choi WK, Chattopadhyay S, Zhao HB, Fitzgerald EA, Antoniadis DA, Lee PS
1911 - 1915	Time development of microstructure and resistivity for very thin Cu films Rossnagel SM, Kuan TS
1916 - 1920	Effects of plasma exposure on structural and optical properties of TiO2 films deposited by off-axis target sputtering Takahashi T, Nakabayashi H, Mizuno V
1921 - 1926	Microstructure and properties of Ti-Si-N nanocomposite films Hu XP, Han ZG, Li GY, Gu MY
1927 - 1933	Anomalies in modeling of anisotropic etching of silicon: Facet boundary effects Elalamy Z, Landsberger LM, Pandy A, Kahrizi M, Stateikina I, Michel S
1934 - 1938	Growth of Be2C(100) films on Be(0001) substrate using C-60 as precursor Tzeng CT, Yuh JY, Lo WS, Chu RY, Tsuei KD
1939 - 1947	Characterization of Pb(Zr, Ti)O-3 thin films fabricated by plasma enhanced chemical vapor deposition on Ir-based electrodes Lee HC, Lee WJ
1948 - 1954	Correlation of surface chemistry of GaAs substrates with growth mode and stacking fault density in ZnSe epilayers Hong SK, Chang JH, Hanada T, Kurtz E, Oku M, Yao T
1955 - 1963	Plasma polymerization and deposition of linear, cyclic and aromatic fluorocarbons on (100)-oriented single crystal silicon substrates Yang GH, Oh SW, Kang ET, Neoh KG
1964 - 1968	Studies on electron behaviors at downstream region of a neutral loop discharge plasma Sakoda T, Sung YM
1969 - 1973	Electron-temperature control in 915 MHz electron cyclotron resonance plasma Itagaki N, Kawai Y, Kawakami S, Ishii N
1974 - 1982	Integrated AlN/diamond heat spreaders for silicon device processing Yoganand SN, Jagannadham K, Karoui A, Wang H
1983 - 1988	Study on the characteristics of aluminum thin films prepared by atomic layer deposition Lee YJ, Kang SW
1989 - 1996	Low-temperature Ar/N-2 remote plasma nitridation of SiO2 thin films Khandelwal A, Niimi H, Lucovsky G, Lamb HH
1997 - 2003	Subsurface interstitials as promoters of three-dimensional growth of Ti on Si(111): An x-ray standing wave, x-ray photoelectron spectroscopy, and atomic force microscopy investigation Kuri G, Schmidt T, Hagen V, Materlik G, Wiesendanger R, Falta J
2004 - 2006	Highly < 100 >-oriented growth of polycrystalline silicon films on glass by pulsed magnetron sputtering Reinig P, Selle B, Fenske F, Fuhs W, Alex V, Birkholz M
2007 - 2017	Epitaxial growth of metastable delta-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering Shin CS, Kim YW, Hellgren N, Gall D, Petrov I, Greene JE
2018 - 2022	In situ pressure measurements in small gettered volumes Nemanic V, Zumer M, Zajec B
2023 - 2026	Structural, electronic and magnetic properties of chalcopyrite magnetic semiconductors: A first-principles study Picozzi S, Continenza A, Zhao YJ, Geng WT, Freeman AJ
2027 - 2031	Temperature effect on growth of well-ordered thin Al2O3 film on NiAl(110) Lay TT, Yoshitake M, Mebarki B
2032 - 2041	Spatial survey of a magnetron plasma sputtering system using a Langmuir probe Field DJ, Dew SK, Burrell RE
2042 - 2048	Effect of carbon enrichment induced by photoresist on highly selective SiO2 etching Chu C, Chi KK, Moon JT
2049 - 2051	Creation of stable, low work function surfaces on Si by implantation of 3 keV Cs+ Musket RG, Balooch M
2052 - 2061	Fluorocarbon-based plasma etching of SiO2: Comparison of C4F6/Ar and C4F8/Ar discharges Li X, Hua XF, Ling L, Oehrlein GS, Barela M, Anderson HM
2062 - 2067	Column angle variations in porous chevron thin films Harris KD, Vick D, Smy T, Brett MJ
2068 - 2071	Observation of step-flow growth in femtosecond pulsed laser deposition of Si on Si(100)-2X1 Hegazy MS, Elsayed-Ali HE
2072 - 2074	Surface morphology of ion-beam deposited carbon films under high temperature Liao MY, Chai CL, Yang SY, Liu ZK, Qin FG, Wang ZG
2075 - 2078	Study on time of flight property of uniform magnetic sector field analyzers up to the third-order approximation Cheng M, Tang TT, Yao ZH, Wang ZH
2079 - 2083	Multiple cavity modes in the helicon plasma generated at very high radio frequency Eom GS, Choe W
2084 - 2095	Correlation between structure, stress and deposition parameters in direct current sputtered zinc oxide films Kappertz O, Drese R, Wuttig M
2096 - 2100	Atomic layer deposition of zirconium silicate films using zirconium tetrachloride and tetra-n-butyl orthosilicate Kim WK, Kang SW, Rhee SW, Lee NI, Lee JH, Kang HK
2101 - 2105	Photoelastic modulation-reflection absorption infrared spectroscopy of CO on Pd(111) Stacchiola D, Thompson AW, Kaltchev M, Tysoe WT
2106 - 2114	Plasma-surface kinetics and simulation of feature profile evolution in Cl-2+HBr etching of polysilicon Jin WD, Vitale SA, Sawin HH
2115 - 2118	Dramatic change of electrical properties in La-Ba-Mn-O thin films prepared using bias sputtering Lee JC, Ie SY, Park SI, Yi YJ, Jang GI, Song HS, You DG, Jeong K
2119 - 2122	Conductance calculation of a long tube with equilateral triangle cross section Fan P, Chu JG, Shao JD
2123 - 2130	Effect of surface polymerization on plasma and process stability in polycrystalline-silicon etching Xu SL, Lill T, Deshmukh S, Joubert O
2131 - 2133	High-sensitivity x-ray photoelectron spectroscopy characterization of a quantum device structure Wintrebert-Fouquet M, Butcher KSA
2134 - 2136	Low temperature deposition of alpha-Al2O3 thin films by sputtering using a Cr2O3 template Jin P, Xu G, Tazawa M, Yoshimura K, Music D, Alami J, Helmersson U
2137 - 2139	Refractive index control of silicon nitride films prepared by radio-frequency reactive sputtering Nayar PS