Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.27, No.6 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (21 articles)

1255 - 1259	Analysis of controlled mixed-phase, amorphous plus microcrystalline. silicon thin films by real time spectroscopic ellipsometry Podraza NJ, Li J, Wronski CR, Dickey EC, Collins RW
1260 - 1265	Characterizations of Ga-doped ZnO films on Si (111) prepared by atmospheric pressure metal-organic chemical vapor deposition Huang YC, Li ZY, Weng LW, Uen WY, Lan SM, Liao SM, Lin TY, Huang YH, Chen JW, Yang TN, Chiang CC
1266 - 1270	Effects of Si capping layers on the properties of ultrathin Co/Ir(111) films Tsay JS, Liou YC, Chen CM, Chan WY
1271 - 1274	Kinetic modeling of the effect of electron beam pulse duration on abatement of carbon tetrafluoride using O-2 as an additive gas Kato S, Okuda I, Takahashi E, Matsumoto Y
1275 - 1280	Effect of magnetic field strength on deposition rate and energy flux in a dc magnetron sputtering system Ekpe SD, Jimenez FJ, Field DJ, Davis MJ, Dew SK
1281 - 1288	Time of flight secondary ion mass spectroscopy studies of poly(allyl methacrylate-g-dimethylsiloxane) copolymers using cryogenic sample handling techniques: Effects of hydration on surface chemical structure and surface chain length distribution Hook DJ, Chen L, Valint PL, Gardella JA
1289 - 1302	Mechanisms for plasma etching of HfO2 gate stacks with Si selectivity and photoresist trimming Shoeb J, Kushner MJ
1303 - 1309	Development of copper-alloy Matsumoto-Ohtsuka-type vacuum flanges and its application to accelerator beam pipes Suetsugu Y, Shirai M, Ohtsuka M, Nishidono T, Watanabe K, Suzuki Y, Tsuchiya M, Yonemoto A, Sennyu K, Hara H
1310 - 1315	Effects of pulsed sputtering frequency on the uniformity of Al:ZnO's transparent conductive oxide properties for solar cell applications Yang W, Joo J
1316 - 1319	Zn-doped CuAlS2 transparent p-type conductive thin films deposited by pulsed plasma deposition Yang M, Wang YH, Li GF, Shi Z, Zhang Q
1320 - 1325	Dry-etching properties of TiN for metal/high-k gate stack using BCl3-based inductively coupled plasma Kim DP, Yang X, Woo JC, Um DS, Kim CI
1326 - 1336	Modeling of the angular dependence of plasma etching Guo W, Sawin HH
1337 - 1342	Ferroelectric polarization dependent interactions at Pd-LiNbO3(0001) interfaces Zhao MSH, Bonnell DA, Vohs JM
1343 - 1346	UV detection based on a ZnO/LiNbO3 layered surface acoustic wave oscillator circuit Wei CL, Chen YC, Fu JL, Kao KS, Cheng DL, Cheng CC
1347 - 1351	Synthesis and hydrogen gas sensing properties of ZnO wirelike thin films Le Hung N, Ahn E, Park S, Jung H, Kim H, Hong SK, Kim D, Hwang C
1352 - 1359	Transmission electron microscopy specimen preparation perpendicular to the long axis of high aspect ratio features Irwin RB, Anciso A, Jones PJ, Glenn AL, Williams BL, Sridhar S, Arshad S
1360 - 1364	Structure and properties of ZrN doped diamondlike carbon films prepared by pulsed bias arc ion plating Li HK, Lin GQ, Dong C
1365 - 1368	Analysis of carbon in SrTiO3 grown by hybrid molecular beam epitaxy Jalan B, Cagnon J, Mates TE, Stemmer S
1369 - 1376	Effects of type of reactor, crystallinity of SiC, and NF3 gas pressure on etching rate and smoothness of SiC surface using NF3 gas plasma Tasaka A, Yamada H, Nonoyama T, Kanatani T, Kotaka Y, Tojo T, Inaba M
1377 - 1391	Simulation of gas flow through tubes of finite length over the whole range of rarefaction for various pressure drop ratios Varoutis S, Valougeorgis D, Sharipov F
1392 - 1399	Preferential growth of helium-doped Ti films deposited by magnetron sputtering Zhang L, Shi LQ, He ZJ, Zhang B, Wang LB