Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.14, No.1 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (101 articles)

1 - 10	Preparation of Sharp Polycrystalline Tungsten Tips for Scanning-Tunneling-Microscopy Imaging Zhang R, Ivey DG
11 - 14	Automated Calibration of the Sample Image Using Crystalline Lattice for Scale Reference in Scanning-Tunneling-Microscopy Kawakatsu H, Kougami H
15 - 21	Gold Oxide as Precursor to Gold Silica Nanocomposites Maya L, Paranthaman M, Thundat T, Bauer ML
22 - 29	New and Simple Method of Contact Processing Characterization Using Atomic-Force Microscopy Mariolle D, Lafond D, Morand Y
30 - 37	Scanning-Tunneling-Microscopy Studies and Computer-Simulations of Annealing of Gold-Films Porath D, Millo O, Gersten JI
38 - 41	Domain Formation and Annealing in an Adsorbed Liquid-Crystal Monolayer Observed by Scanning-Tunneling-Microscopy Stevens F, Dyer DJ, Walba DM
42 - 47	Surface-Roughness Characterization of Soft-X-Ray Multilayer Films on the Nanometer-Scale Yu J, Cao JL, Namba Y, Ma YY
48 - 53	Systematic Investigations of Nanostructuring by Scanning-Tunneling-Microscopy Koning R, Jusko O, Koenders L, Schlachetzki A
54 - 62	Atomic-Force Microscopy Study of Electron-Beam Written Contamination Structures Amman M, Sleight JW, Lombardi DR, Welser RE, Deshpande MR, Reed MA, Guido LJ
63 - 68	Multiple-Layer Blank Structure for Phase-Shifting Mask Fabrication Pierrat C, Siegrist T, Demarco J, Harriott L, Vaidya S
69 - 74	Monolayers of Fluorinated Silanes as Electron-Beam Resists Stjohn PM, Craighead HG
75 - 79	Effect of Molecular-Weight on Poly(Methyl Methacrylate) Resolution Khoury M, Ferry DK
80 - 84	Modeling and Design of Space-Charge Lenses Aberration Correctors for Focused Ion-Beam Systems Tang TT, Orloff J, Wang L
85 - 90	Mechanism for Anisotropic Etching of Photoresist-Masked, Polycrystalline Silicon in HBr Plasmas Cheng CC, Guinn KV, Donnelly VM
91 - 95	Amplification and Surface-Topography in Synchrotron-Radiation-Induced Dry-Etching of Si with Xef2 Streller U, Li B, Krause HP, Schwentner N
96 - 101	Polysilicon Gate Etching in High-Density Plasmas .1. Process Optimization Using a Chlorine-Based Chemistry Bell FH, Joubert O, Vallier L
102 - 105	Monitoring of Deposition and Dry-Etching of Si SiGe Multiple Stacks Tillack B, Richter HH, Ritter G, Wolff A, Morgenstern G, Eggs C
106 - 111	Modifications of the 3-Dimensional Transport-Properties of Si-Doped Al0.25Ga0.75As Exposed to CH4/H-2 Reactive Ion Etching Pereira RG, Vanhove M, Vanrossum M
112 - 117	Surface Characterization of Sidewall Protection Film on GaAs Steep via Holes Etched by Magnetron Ion Etching Takano H, Sumitani K, Matsuoka H, Sato K, Ishihara O, Tsubouchi N
118 - 125	High Microwave-Power Electron-Cyclotron-Resonance Etching of III-V Semiconductors in CH4/H-2/Ar Pearton SJ, Lee JW, Lambers ES, Mileham JR, Abernathy CR, Hobson WS, Ren F, Shul RJ
126 - 131	Reactive Ion Etching GaAs and AlAs - Kinetics and Process Monitoring Franz G, Hoyler C, Kaindl J
132 - 135	Use of Maximum-Entropy Deconvolution for the Study of Silicon Delta-Layers in GaAs Cooke GA, Dowsett MG, Allen PN, Collins R, Miethe K
136 - 146	Surface-Reaction of Trimethylgallium on GaAs Nishizawa J, Sakuraba H, Kurabayashi T
147 - 151	(NH4)(2)S-X Preepitaxial Treatment for GaAs Chemical Beam Epitaxy Regrowth Sik H, Driad R, Legay P, Juhel M, Harmand JC, Launay P, Alexandre F
152 - 158	Sulfur Contamination of (100)GaAs Resulting from Sample Preparation Procedures and Atmospheric Exposure Butcher KS, Egan RJ, Tansley TL, Alexiev D
159 - 166	Ex-Situ Formation of HgSe Electrical Contacts to P-ZnSe Fijol JJ, Trexler JT, Calhoun L, Park RM, Holloway PH
167 - 173	Effect of Surface Pretreatment of Submicron Contact Hole on Selective Tungsten Chemical-Vapor-Deposition Yeh WK, Chen MC, Lin MS
174 - 178	Characteristics of Gap Fill and Planarization of Fluorinated Polyimide Fpi-45M Films Wang SQ, Zhao B
179 - 180	Laser-Assisted Focused-Ion-Beam-Induced Deposition of Copper Funatsu J, Thompson CV, Melngailis J, Walpole JN
181 - 183	Rapid Thermal-Oxidation of Si Using a Mixture of N2O and O-2 at Various Partial-Pressure of N2O Eftekhari G
184 - 186	Electron-Beam Defined Surface Gratings in AlGaAs with Precisely Controlled Duty Cycle Using a Multiple Line Exposure Technique Eriksson N, Hagberg M, Larsson A
187 - 187	Surface Ordering on GaAs(100) by Indium-Termination (Vol 13, Pg 1672, 1995) Reschesser U, Esser N, Springer C, Zegenhagen J, Richter W, Cardona M, Fimland BO
191 - 191	Papers from the 3rd International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors - 20-22 March 1995 Mcnc-Center-for-Microelectronics, Research-Triangle Park, North-Carolina - Preface Ehrstein J
192 - 195	Physical Limits on Gigascale Integration Meindl JD
196 - 201	Characterization of 2-Dimensional Dopant Profiles - Status and Review Diebold AC, Kump MR, Kopanski JJ, Seiler DG
202 - 212	Practical Perspective of Shallow Junction Analysis Heimbrook LA, Baiocchi FA, Bittner TC, Geva M, Luftman HS, Nakahara S
213 - 217	Technology Computer-Aided-Design Characterization Needs and Requirements Law ME
218 - 223	Dopant Profile Control and Metrology Requirements for Sub-0.5 Mu-M Metal-Oxide-Semiconductor Field-Effect Transistors Duane M, Nunan P, Terbeek M, Subrahmanyan R
224 - 230	2-Dimensional Dopant Profiling of Submicron Metal-Oxide-Semiconductor Field-Effect Transistor Using Nonlinear Least-Squares Inverse Modeling Khalil N, Faricelli J, Huang CL, Selberherr S
231 - 235	Physical Characterization of 2-Dimensional Doping Profiles for Process Modeling Alvis R, Luning S, Thompson L, Sinclair R, Griffin P
236 - 241	Modeling of Leakage Mechanisms in Sub-50 nm P(+)-N Junctions Jones EC, Cheung NW
242 - 247	Scanning Capacitance Microscopy Measurements and Modeling - Progress Towards Dopant Profiling of Silicon Kopanski JJ, Marchiando JF, Lowney JR
248 - 254	Surface Generation Lifetime of MeV Implanted Si Lowell J
255 - 259	Dose-Rate and Thermal Budget Optimization for Ultrashallow Junctions Formed by Low-Energy (2-5 keV) Ion-Implantation Craig M, Sultan A, Reddy K, Banerjee S, Ishida E, Larson L
260 - 264	Analysis of Ultrashallow Doping Profiles Obtained by Low-Energy Ion-Implantation Parab KB, Yang SH, Morris SJ, Tian S, Tasch AF, Kamenitsa D, Simonton R, Magee C
265 - 271	Importance of Determining the Polysilicon Dopant Profile During Process-Development Debusschere I, Deferm L, Vandervorst W
272 - 277	Verification of Models for the Simulation of Boron Implantation into Crystalline Silicon Hobler G, Simionescu A, Palmetshofer L, Jahnel F, Voncriegern R, Tian C, Stingeder G
278 - 282	3-Dimensional Modeling of Low-Dose Bf2+ Implantation into Single-Crystalline Silicon Murthy CS, Posselt M, Frei T
283 - 286	Experimental Investigation of the Increase in-Depth Resolution Obtained Through the Use of Maximum-Entropy Deconvolution of Secondary-Ion Mass-Spectrometry Depth Profiles Cooke GA, Dowsett MG, Phillips P
287 - 293	Secondary-Ion Mass-Spectroscopy Ultrashallow Depth Profiling for Si/Si1-xGex/Si Heterojunction Bipolar-Transistors Kruger D, Kurps R, Heinemann B, Herzel F, Zeindl HP
294 - 300	Use of Resonance Ionization Microprobe Analysis for Characterization of Ultrashallow Doping Profiles in Semiconductors Arlinghaus HF, Joyner CF
301 - 304	Surface-Analysis, Depth Profiling, and Evaluation of Si Cleaning Procedures by Postionization Sputtered Neutral Mass-Spectrometry Emerson AB, Ma Y, Wise ML, Green ML, Downey SW
305 - 310	Sputter Depth Profiling of Surface-Potentials in Silicon Semiconductors Smith HE, Harris WC
311 - 323	Depth Profiling of B Through Silicide on Silicon Structures, Using Secondary Ion-Mass Spectrometry and Resonant Postionization Mass-Spectrometry Debisschop P, Gomez J, Geenen L, Vandervorst W
324 - 328	Accurate Secondary-Ion Mass-Spectrometry Analysis of Shallow Doping Profiles in Si Based on the Internal Standard Method Liu GL, Uchida H, Aikawa I, Kuroda S, Hirashita N
329 - 335	Surface Metal Contamination During Ion-Implantation - Comparison of Measurements by Secondary-Ion Mass-Spectroscopy, Total-Reflection X-Ray-Fluorescence Spectrometry, and Vapor-Phase Decomposition Used in Conjunction with Graphite-Furnace Atomic-Absorption Spectrometry and Inductively-Coupled Plasma-Mass Spectrometry Frost MR, Harrington WL, Downey DF, Walther SR
336 - 340	Comparison of Different Analytical Techniques in Measuring the Surface Region of Ultrashallow Doping Profiles Felch SB, Chapek DL, Malik SM, Maillot P, Ishida E, Magee CW
341 - 347	Characterization of B and Sb Delta-Doping Profiles in Si and Si1-xGex Alloys Grown by Molecular-Beam Epitaxy Kruger D, Gaworzewski P, Kurps R, Zeindl HP
348 - 352	2-Dimensional Profiling of Large Tilt Angle, Low-Energy Boron-Implanted Structure Using Secondary-Ion Mass-Spectrometry Cooke GA, Pearson P, Gibbons R, Dowsett MG, Hill C
353 - 357	Improved Sensitivity and Depth Resolution for Analyses of Shallow P-N-Junctions in Silicon with Secondary-Ion Mass-Spectrometry Erickson JW, Brigham R
358 - 368	Recent Insights into the Physical Modeling of the Spreading Resistance Point-Contact Clarysse T, Dewolf P, Bender H, Vandervorst W
369 - 372	One-Dimensional and 2-Dimensional Characterization of Power Metal-Oxide-Semiconductor Structure by Spreading Resistance Profiling - From the Profiles to the I-V Curves Privitera V, Saggio MG, Magri A
373 - 379	Properties of Probe Tip Si Contacts and Their Connection to Spreading Resistance Analyses Gaworzewski P, Roos B, Borngraber J, Hoppner K, Hoppner W, Henniger U
380 - 385	One-Dimensional and 2-Dimensional Carrier Profiling in Semiconductors by Nanospreading Resistance Profiling Dewolf P, Clarysse T, Vandervorst W, Snauwaert J, Hellemans L
386 - 389	Cross-Sectional Imaging of Semiconductor-Device Structures by Scanning Resistance Microscopy Nxumalo JN, Shimizu DT, Thomson DJ
390 - 396	Sheet Resistance Corrections for Spreading Resistance Ultrashallow Profiling Clarysse T, Vandervorst W, Pawlik M
397 - 403	Study of Electrical Measurement Techniques for Ultra-Shallow Dopant Profiling Ishida E, Felch SB
404 - 407	Influence of the Substrate Doping Level on Spreading Resistance Profiling Vandervorst W, Clarysse T, Smith HE
408 - 413	Application of a Genetic Algorithm to Doping Profile Identification Kuzmicz W
414 - 420	2-Dimensional Junction Profiling by Selective Chemical Etching - Applications to Electron Device Characterization Spinella C, Raineri V, Lavia F, Campisano SU
421 - 425	Quantitative 2-Dimensional Dopant Profiles Obtained Directly from Secondary-Electron Images Venables D, Maher DM
426 - 432	2-Dimensional Scanning Capacitance Microscopy Measurements of Cross-Sectioned Very Large-Scale Integration Test Structures Neubauer G, Erickson A, Williams CC, Kopanski JJ, Rodgers M, Adderton D
433 - 436	Direct Comparison of Cross-Sectional Scanning Capacitance Microscope Dopant Profile and Vertical Secondary Ion-Mass Spectroscopy Profile Huang Y, Williams CC, Smith H
437 - 439	Secondary Electrons Imaging of Metal-Semiconductor Field-Effect Transistor Operation Milshtein S, Kharas D, Lee C, Ersland P
440 - 446	Imaging Integrated-Circuit Dopant Profiles with the Force-Based Scanning Kelvin Probe Microscope Hochwitz T, Henning AK, Levey C, Daghlian C, Slinkman J, Never J, Kaszuba P, Gluck R, Wells R, Pekarik J, Finch R
447 - 451	2-Dimensional Dopant Profiling of Very Large-Scale Integrated Devices Using Selective Etching and Atomic-Force Microscopy Barrett M, Dennis M, Tiffin D, Li Y, Shih CK
452 - 456	Junction Metrology by Cross-Sectional Atomic-Force Microscopy Alvis R, Mantiply B, Young M
457 - 462	Capacitive Effects on Quantitative Dopant Profiling with Scanned Electrostatic Force Microscopes Hochwitz T, Henning AK, Levey C, Daghlian C, Slinkman J
465 - 465	Papers from the 3rd International Workshop on Advanced Plasma Tools for Etching, Chemical-Vapor-Deposition, and Plasma Vapor-Deposition - Sources, Process-Control, and Diagnostics - 3-4 May 1995 Le-Baron-Hotel, San-Jose, California - Preface Gabriel CT
466 - 470	Geometric Focusing Technology Applied to SiO2 Etching Donohue JF, Kent M, Sampson A
471 - 473	Cera-V - Microwave Plasma Stream Source with Variable Ion Energy Balmashnov AA
474 - 477	Characterization of a Simplified Gas-Distribution for Wafer Cost Reduction in a Plasma Metal Etcher Chou C, Saravanan K, Kava J, Siegel M
478 - 482	X-Ray Photoemission Spectroscopy Analysis of Oxide Etch Polymers in Inductively-Coupled High-Density Plasmas Park JH, Chung SW, Kim JJ, Kim WS
483 - 488	Sensor Systems for Real-Time Feedback-Control of Reactive Ion Etching Benson TE, Kamlet LI, Ruegsegger SM, Hanish CK, Hanish PD, Rashap BA, Klimecky P, Freudenberg JS, Grizzle JW, Khargonekar PP, Terry FL, Barney B
489 - 493	Process-Control Based on Quadrupole Mass-Spectrometry Greve DW, Knight TJ, Cheng X, Krogh BH, Gibson MA, Labrosse J
494 - 497	Real-Time Temperature Monitoring Using a Noncontact Thermocouple for the Next-Generation Sputtering System Hosokawa A, Kowaka M
498 - 503	Application of Neural Networks to Plasma Etch End-Point Detection Allen RL, Moore R, Whelan M
504 - 510	Neural Networks in Plasma Processing Rietman EA
511 - 515	Reflectance Spectra of Plasma-Etched Silicon Engstrom H
516 - 520	End-Point Control via Optical-Emission Spectroscopy Litvak HE
521 - 526	Process Kit and Wafer Temperature Effects on Dielectric Etch Rate and Uniformity of Electrostatic Chuck Shan HC, Pu BY, Gao H, Ke KH, Lewis J, Welch M, Deshpandey C
527 - 532	Optical-Emission Spectra of Microwave Oxygen Plasmas and Fabrication of SiO2-Films Chau TT, Kao KC
533 - 537	Real-Time Statistical Process-Control for Improved Etch Tool Performances Smith G, Highberg I
538 - 542	Metal Contamination of Silicon-Wafers Induced by Reactive Ion Etching Plasmas and Its Behavior upon Subsequent Cleaning Procedures Verdonck P, Hasenack CM, Mansano RD
543 - 546	Etching 0.35 Mu-M Polysilicon Gates on a High-Density Helicon Etcher Kraft R, Boonstra T, Prengle S
547 - 551	Characterization of a Low-Pressure, High Ion Density, Plasma Metal Etcher Hill R
552 - 559	Modeling of Oxide Charging Effects in Plasma Processing En W, Linder BP, Cheung NW
560 - 565	Notching as an Example of Charging in Uniform High-Density Plasmas Kinoshita T, Hane M, Mcvittie JP
566 - 570	Effect of Wafer Temperature During Plasma Exposure on Charging Damage Ma SM, Mcvittie JP
571 - 576	Evaluation of Plasma Damage Using Fully Processed Metal-Oxide-Semiconductor Transistors Li XY, Brozek T, Preuninger F, Chan D, Viswanathan CR
577 - 581	Comparison of Damage Created by a Chemical Downstream Etcher and Plasma-Immersion System in Metal-Oxide-Semiconductor Capacitors Brozek T, Dao T, Viswanathan CR