Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.16, No.1 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (83 articles)

1 - 6	Dry etching and consequent burring regrowth of nanosize quantum wells stripes using an in situ ultrahigh vacuum multichamber system Yoshikawa T, Sugimoto Y, Kohmoto S, Kitamura S, Makita K, Nambu Y, Asakawa K
7 - 13	In-plane anisotropy of ZnTe nanoparticle-doped glass thin films fabricated by simultaneous oblique deposition from two opposing directions Takeda Y, Motohiro T, Hioki T, Noda S
14 - 18	Electroluminescence from ZnSTe : Al alloy and an investigation of local current distributions by conducting atomic force microscopy Mao JM, Sou IK, Xu JB, Wilson IH
19 - 22	Microstructure of novel superhard nanocrystalline amorphous composites as analyzed by high resolution transmission electron microscopy Christiansen S, Albrecht M, Strunk HP, Veprek S
23 - 29	Nanoscale imaging of the electronic tunneling barrier at a metal surface Condon GR, Panitz JA
30 - 37	Scanning tunneling microscopy atomic resolution images of sulfur overlayers on Fe(111) Cabibil H, Lin JS, Kelber JA
38 - 42	Effect of lubricant coating on tips in atomic force microscopy Umemura S, Igarashi M, Andoh Y, Kaneko R, Aizawa S, Noguchi K, Dekura T, Toda A
43 - 50	Analysis and optimization of force sensitivity in atomic force microscopy using optical and electrical detection Ho F, Yamamoto Y
51 - 53	Removing drift from scanning probe microscope images of periodic samples Woodward JT, Schwartz DK
54 - 58	Generic scanned-probe microscope sensors by combined micromachining and electron-beam lithography Zhou H, Midha A, Mills G, Thoms S, Murad SK, Weaver JMR
59 - 68	Generating similar to 90 nanometer features using near-field contact-mode photolithography with an elastomeric phase mask Rogers JA, Paul KE, Jackman RJ, Whitesides GM
69 - 76	Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations Namatsu H, Takahashi Y, Yamazaki K, Yamaguchi T, Nagase M, Kurihara K
77 - 79	Electron-beam lithography with metal colloids : Direct writing of metallic nanostructures Lohau J, Friedrichowski S, Dumpich G, Wassermann EF
80 - 87	Scatterometry measurement of sub-0.1 mu m linewidth gratings Coulombe SA, Minhas BK, Raymond CJ, Naqvi SSH, McNeil JR
88 - 97	Quantifying distortions in soft lithography Rogers JA, Paul KE, Whitesides GM
98 - 103	Photolithography with transparent reflective photomasks Qin D, Xia YN, Black AJ, Whitesides GM
104 - 108	Electrostatic accel-decel lens with the advantage of reduced chromatic aberration Nomura S
109 - 115	Mathematical modeling of focused ion beam microfabrication Nassar R, Vasile M, Zhang W
116 - 120	Selected two-dimensional effects in gas immersion laser doping of unpatterned silicon Sadra K, Ji HF
121 - 124	Electric field induced structural change for poly(vinylidene fluoride-co-trifluoroethylene) ultrathin films studied by scanning Maxwell stress microscope Kajiyama T, Khuwattanasil N, Takahara A
125 - 130	Surface characterizations on newly developed copolyester thin films for microelectronics devices Shi FF, Economy J
131 - 136	Preliminary empirical results suggesting the mapping of dynamic in situ process signals to real-time wafer attributes in a plasma etch process Rietman EA, Ibbotson DE, Lee JTC
137 - 141	Evidence of Ge island formation during thermal annealing of SiGe alloys : Combined atomic force microscopy and Auger electron spectroscopy study Tetelin C, Wallart X, Stievenard D, Nys JP, Gravesteijn DJ
142 - 146	Temperature dependence of conductivity and Hall carrier concentration of polycrystalline SiC deposited on fused silica by laser ablation Abu-Ageel N, Aslam DM, Ager R, Rimai L
147 - 158	X-ray photoelectron spectroscopy analyses of metal stacks etched in Cl-2/BCl3 high density plasmas Czuprynski P, Joubert O, Vallier L, Puttock M, Heitzmann M
159 - 163	Numerical analysis of the pressure dependence of the etch rate in an Al etching reactor equipped with a helicon source Ikeda K, Oshita Y
164 - 172	Surface processes occurring on TiSi2 and CoSi2 in fluorine-based plasmas : Afterglow of a NF3 plasma Baklanov MR, Vanhaelemeersch S, Storm W, Vandervorst W, Maax K
173 - 182	Electrical optimization of plasma-enhanced chemical vapor deposition chamber cleaning plasmas Sobolewski MA, Langan JG, Felker BS
183 - 191	Nitridation of GaAs using helicon-wave excited and inductively coupled nitrogen plasma Hara A, Nakamura R, Ikoma H
192 - 196	Synchrotron radiation photoemission spectroscopy studies of the thermal nitridation of GaAs(100) with ammonia Huh C, Park SJ, Ahn S, Han JY, Cho KJ, Seo JM
197 - 203	Characterization of III nitride materials and devices by secondary ion mass spectrometry Chu PK, Gao YM, Erickson JW
204 - 209	Temperature effect on surface flatness of molecular beam epitaxy homoepitaxial layers grown on nominal and vicinal (111)B GaAs substrates Guerret-Piecourt C, Fontaine C
210 - 215	Selective infill metalorganic molecular beam epitaxy of InP : Si n(+)/n(-) layers for buried collector double heterostructure bipolar transistors Schelhase S, Bottcher J, Gibis R, Harde P, Paraskevopoulos A, Kunzel H
216 - 222	Characterization of an n-GaAs layer grown on a GaAs substrate cleaned by an electron cyclotron resonance hydrogen plasma Takanashi Y, Kondo N
223 - 226	Nonselective wet chemical etching of GaAs and AlGaInP for device applications Zaknoune M, Schuler O, Mollot F, Theron D, Crosnier Y
227 - 231	Thermal stability of Pd/Zn and Pt based contacts to p-In0.53Ga0.47As/InP with various barrier layers Leech PW, Reeves GK, Zhou W, Ressel P
232 - 237	Specific features of field emission from submicron cathode surface areas at high current densities Fursey GN, Baskin LM, Glazanov DV, Yevgen'ev AO, Kotcheryzhenkov AV, Polezhaev SA
238 - 241	Fabrication and characterization of silicon field emitter arrays by spin-on-glass etch-back process Lee JH, Kang SW, Song YH, Cho KI, Lee SY, Yoo HJ
242 - 246	Novel structure of a silicon field emission cathode with a sputtered TiW gate electrode Kang SW, Lee JH, Yu BG, Cho KI, Yoo HJ
247 - 249	Nonstraight discharge path guided by a laser beam Hoshi Y, Yoshida H
250 - 252	Existence of optimal N2O nitridation temperature and time for hot-electron hardness enhancement in metal-oxide-Si capacitors Chang-Liao KS, Lai HC
253 - 254	Reactive ion etching of CHF3+BCl3 for ternary InxAl1-xAs and InxGa1-xAs (x = 0.18, 0.3, 0.52) compounds using various in contents Kao HC, Lai LS, Chan YJ
255 - 255	Isolation of a lattice-mismatched AlInAs/GaInAs layer on InP using ion implantation for high energy mobility transistor realization (vol 15, pg 1008, 1997) Fourre H, Pesant JC, Schuler O, Cappy A
259 - 259	Papers from the Fourth International Workshop on the Measurement and Characterization of Ultra-shallow Doping Profiles in Semiconductors - 6-9 April 1997 MCNC, Center for Microelectronics Research Triangle Park, North Carolina - Preface Current M, Kump M, McGuire G
260 - 271	Qualification of spreading resistance probe operations Clarysse T, Vandervorst W
272 - 279	Sources of error in quantitative depth profiling of shallow doping distributions by secondary-ion-mass spectrometry in combination with oxygen flooding Wittmaack K, Corcoran SF
280 - 285	Characterization of low-energy (100 eV 10 keV) boron ion implantation Collart EJH, Weemers K, Gravesteijn DJ, van Berkum JGM
286 - 291	Techniques and applications of secondary ion mass spectrometry and spreading resistance profiling to measure ultrashallow junction implants down to 0.5 keV B and BF2 Harrington WL, Magee CW, Pawlik M, Downey DF, Osburn CM, Felch SB
292 - 297	Ultrashallow secondary ion mass spectroscopy depth profiling of doping spikes and Si/SiGe/Si heterostructures using different primary species Kruger D, Iltgen K, Heinemann B, Kurps R, Benninghoven A
298 - 301	Secondary ion mass spectrometry depth profiling of ultralow-energy ion implants : Problems and solutions van Berkum JGM, Collart EJH, Weemers K, Gravesteijn DJ, Iltgen K, Benninghoven A, Niehuis E
302 - 305	Ultralow energy secondary ion mass spectrometry and transient yields at the silicon surface Dowsett MG, Ormsby TJ, Cooke GA, Chu DP
306 - 311	Metal-oxide-semiconduct or field-effect transistor junction requirements Duane M, Lynch W
312 - 315	Optical determination of shallow carrier profiles using Fourier transform infrared ellipsometry Tiwald TE, Thompson DW, Woollam JA
316 - 319	High-resolution damage depth profiles of unannealed sub-100 nm B+ implants in (100) silicon Hartford CL, Hillard RJ, Mazur RG, Foad MA
320 - 326	Quantification of nanospreading resistance profiling data De Wolf P, Clarysse T, Vandervorst W
327 - 333	200 eV 10 keV boron implantation and rapid thermal annealing : Secondary ion mass spectroscopy and transmission electron microscopy study Current MI, Lopes D, Foad MA, England JG, Jones C, Su D
334 - 338	Shallow junctions diffused from single- and coimplanted WSi2 films and integrated 0.2 mu m complementary metal-oxide-semiconductor transistors Liu CT, Luftman H, Chang CP, Liu R, Hillenius SJ
339 - 343	Scanning capacitance microscopy measurement of two-dimensional dopant profiles across junctions Kopanski JJ, Marchiando JF, Berning DW, Alvis R, Smith HE
344 - 348	Direct comparison of two-dimensional dopant profiles by scanning capacitance microscopy with TSUPREM4 process simulation McMurray JS, Kim J, Williams CC, Slinkman J
349 - 354	Two-dimensional profiling in silicon using conventional and electrochemical selective etching Trenkler T, Vandervorst W, Hellemans L
355 - 361	Cross-sectional nano-spreading resistance profiling De Wolf P, Clarysse T, Vandervorst W, Hellemans L, Niedermann P, Hanni W
362 - 366	Secondary electron imaging as a two-dimensional dopant profiling technique : Review and update Venables D, Jain H, Collins DC
367 - 372	Nanopotentiometry : Local potential measurements in complementary metal-oxide-semiconductor transistors using atomic force microscopy Trenkler T, De Wolf P, Vandervorst W, Hellemans L
373 - 376	Ultrahigh depth resolution secondary ion mass spectrometry with sub-keV grazing O-2(+) beams Alkemade PFA, Jiang ZX, Visser CCG, Radelaar S, Arnoldbik WM
377 - 381	Quantification of secondary-ion-mass spectroscopy depth profiles using maximum entropy deconvolution with a sample independent response function Dowsett MG, Chu DP
382 - 385	Comparison of secondary ion mass spectrometry profiling of sub-100 nm ultrashallow junctions using NO2+ and O-2(+) sputtering Ronsheim PA, Lee KL
386 - 393	Verification of "lateral secondary ion mass spectrometry" as a method for measuring lateral dopant dose distributions in microelectronics test structures von Criegern R, Jahnel F, Lange-Gieseler R, Pearson P, Hobler G, Simionescu A
394 - 400	Epitaxial staircase structure for the calibration of electrical characterization techniques Clarysse T, Caymax M, De Wolf P, Trenkler T, Vandervorst W, McMurray JS, Kim J, Williams CC, Clark JG, Neubauer G
401 - 405	Low weight spreading resistance profiling of ultrashallow dopant profiles De Wolf P, Clarysse T, Vandervorst W, Hellemans L
406 - 410	Electrical characterization of shallow pn junctions Gaworzewski P, Tittelbach-Helmrich K, Jacob K, Muller B
411 - 414	Evaluation of diamond-ground beveled surfaces with Hg gate capacitance-voltage and current-voltage Hillard RJ, Sherbondy JC, Hartford CL, Weinzierl SR, Maur RG
415 - 419	Recoil implantation of boron into silicon for ultrashallow junction formation : Modeling, fabrication, and characterization Liu HL, Gearhart SS, Booske JH, Wang W
420 - 425	Auger voltage contrast imaging for the delineation of two-dimensional junctions in cross-sectioned metal-oxide-semiconductor devices Werner WSM, Lakatha H, Smith HE, LeTarte L, Ambrose V, Baker J
426 - 429	Diffusion from polymer spin-on films : Measurements and simulations Ber BY, Guk EG, Kamanin AV, Kudryavtsev YA, Mokina LA, Shmidt NM, Shuman VB, Busygina LA, Yurre TA
430 - 434	Empirical implantation damage model and its effect on reverse short channel effect for 0.35 mu m complementary metal-oxide-semiconductor technology Kim J, Yang K, Kim H, Baek J, Kim C
435 - 439	Process effects in shallow junction formation by plasma doping Matyi RJ, Felch SB, Lee BS, Strathman MR, Keenan JA, Guo Y, Wang L
440 - 446	Physically based modelling of two-dimensional and three-dimensional implantation profiles : Influence of damage accumulation Murthy CS, Posselt M, Feudel T
447 - 452	Consideration of in-line qualification for ultrashallow junction implantation Boyd W, Lee M, Wagner D, Romig T, Bennett J, Larson L, Johnson W, Zhou L
453 - 456	Two-dimensional pn-junction delineation and individual dopant identification using scanning tunneling microscopy/spectroscopy Chao KJ, Smith AR, McDonald AJ, Kwong DL, Streetman BG, Shih CK
457 - 462	Two-dimensional imaging of charge carrier profiles using local metal-semiconductor capacitance-voltage measurement Li Y, Nxumalo JN, Thomson DJ
463 - 470	Model database for determining dopant profiles from scanning capacitance microscope measurements Marchiando JF, Kopanski JJ, Lowney JR
471 - 475	Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si Neogi SS, Venables D, Na ZY, Maher DM
476 - 480	Strong effect of dopant concentration gradient an etching rate Ukraintsev VA, McGlothlin R, Gribelyuk MA, Edwards H