Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.20, No.1 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (91 articles)

1 - 4	Approach for a self-assembled thin film edge field emitter Tsai JTH, Teo KBK, Milne WI
5 - 9	Low-voltage electron emission from mineral films Rech J, Grauby O, Morin R
10 - 13	Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process Biber M, Termirci C, Turut A
14 - 18	Characterization of annealing effects of low temperature chemical vapor deposition oxide films as application of 4H-SiC metal-oxide-semiconductor devices Cho WJ, Kim YC
19 - 24	Control of field emission current of individual sites by a local resistor Cui JB, Robertson J
25 - 30	Electron optics using multipole lenses for a low energy electron beam direct writing system Yamazaki Y, Nagano O, Hashimoto S, Ando A, Sugihara K, Miyoshi M, Okumura K
31 - 41	Power spectral densities: A multiple technique study of different Si wafer surfaces Marx E, Malik IJ, Strausser YE, Bristow T, Poduje N, Stover JC
42 - 46	Fabrication of c-axis oriented ZnO/AlN thin films prepared by radio frequency reactive sputtering and development of ZnO/AlN layered structure surface acoustic wave devices Yong YJ, Kang YS, Lee PS, Lee JY
47 - 52	Inductively coupled plasma etching of InP using CH4/H-2 and CH4/H-2/N-2 Chen HY, Ruda HE
53 - 59	Double-gated Spindt emitters with stacked focusing electrode Dvorson L, Akinwande AI
60 - 64	Characterization of self-assembled alkanethiol monolayers using a low-current scanning tunneling microscope Wang DW, Tian F, Lu JG
65 - 70	I-V characteristics of thin-film gated photocathodes for electron-beam lithography Pei Z, Berglund CN
71 - 75	Stencil reticle cleaning using an Ar aerosol cleaning technique Okada M, Kawata S, Sonoda Y
76 - 80	Potential distribution and field intensity for a hyperboloidal probe in a uniform field Passian A, Wig A, Meriaudeau F, Ferrell TL
81 - 86	Practical approach for modeling extreme ultraviolet lithography mask defects Gullikson EM, Cerjan C, Stearns DG, Mirkarimi PB, Sweeney DW
87 - 89	Ion beam proximity lithography on spherical substrates with continuously scanned, self-complementary masks Ruchhoeft P, Wolfe JC, Bass R
90 - 94	Improvement in partitioning method for electron beam lithography simulation Aya S, Hifumi T, Kise K, Marumoto K
95 - 99	Nondestructive via in-hole profile characterization using atomic force microscopy metrology Ali A, Ukraintsev V, Sabri H, Yang M
100 - 104	Simulations of field emission from a semiconducting (10,0) carbon nanotube Mayer A, Miskovsky NM, Cutler PH
105 - 108	Investigation of macroscopic uniformity during CH4/H-2 reactive ion etching of InP and its improvement by use of a guard ring Janiak K, Niggebrugge U
109 - 115	Properties of porous HSQ-based films capped by plasma enhanced chemical vapor deposition dielectric layers Iacopi F, Baklanov MR, Sleeckx E, Conrad T, Bender H, Meynen H, Maex K
116 - 121	Characterization of plasma-enhanced chemical vapor deposition carbon nanotubes by Auger electron spectroscopy Teo KBK, Chhowalla M, Amaratunga GAJ, Milne WI, Pirio G, Legagneux P, Wyczisk F, Olivier J, Pribat D
122 - 127	Field electron emission from carbon nanotubes grown by plasma-enhanced chemical vapor deposition Tanemura M, Filip V, Iwata K, Fujimoto Y, Okuyama F, Nicolaescu D, Sugie H
128 - 137	Time variation of the work function of field emitter tip surface and the development of adsorption of residual gas molecules studied by sawtoothlike emission current method Yamamoto Y, Nagakura S, Iwatsuki M
138 - 144	Study on beam size correction free from Coulomb interaction Takenaka H, Sasago M
145 - 153	Deuterium and fluorine radical reaction kinetics on photoresist Greer F, Coburn JW, Graves DB
154 - 158	In situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching Kok KW, Yoo WJ, Sooriakumar K
159 - 163	Spectra characterization of silicon carbonitride thin films by reactive radio frequency sputtering Peng XF, Song LX, Le J, Hu XF
164 - 166	Calibration and validation of projection lithography focusing by fluorescence detection of latent photoacid images in chemically amplified resist Feke GD, Grober RD, Pohlers G, Cameron JF
167 - 172	Thermal agglomeration of single-crystalline Si layer on buried SiO2 in ultrahigh vacuum Nuryadi R, Ishikawa Y, Ono Y, Tabe M
173 - 179	Suppressing baron penetration and cobalt silicide agglomeration in deep submicron p-channel metal-oxide-semiconductor devices Kamal AHM, Obeidat AT, Budri T
180 - 184	Compact focusing system for ion and electron beams Reijonen J, Ji Q, King TJ, Leung KN, Persaud A, Wilde S
185 - 190	Spatial distribution of reaction products in positive tone chemically amplified resists Schmid GM, Stewart MD, Singh VK, Willson CG
191 - 196	Dry etching of amorphous-Si gates for deep sub-100 nm silicon-on-insulator complementary metal-oxide semiconductor Yost D, Forte T, Fritze M, Astolfi D, Suntharalingam V, Chen CK, Cann S
197 - 202	Etch depth control in bulk GaAs using patterning and real time spectroscopic ellipsometry Cho SJ, Snyder PG, Herzinger CM, Johs B
203 - 208	Low turn-on voltage Mo-polycide field emitter arrays applied to field emission flat panel display Uh HS, Park SS, Lee JD
209 - 215	Alloy layer disorder in strained-layer InAs/GaInSb/AlSb superlattices with infrared laser applications Kitchin MR, Shaw MJ, Hagon JP, Jaros M
216 - 218	Optical transitions in piezoelectrically polarized GalnN/GaN quantum wells Wetzel C, Nelson J, Kamiyama S, Amano H, Akasaki I
219 - 225	Spectroscopic characterization of acid generation and concentration and free volume evolution in chemically amplified resists Jessop JLP, Goldie SN, Scranton AB, Blanchard GJ
226 - 229	Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111)) Hakanson U, Ohlsson BJ, Montelius L, Samuelson L
230 - 237	Activation of group III combinations in silicon and modifications introduced by nitrogen Aronowitz S, Zubkov V, Puchner H, Kimball J
238 - 242	Field emission from chemical vapor deposition diamond surface with graphitic patches Cui JB, Robertson J
243 - 245	High direct energy band gaps determination in InxAl1-xAs coherently grown on InP Convertino A, Padeletti G, Cerri L, Viticoli S
246 - 249	Heavy ion projection beam system for material modification at high ion energy Weidenmuller U, Meijer J, Stephan A, Bukow HH, Sossna E, Volland B, Rangelow IW
250 - 256	Bright peak enhanced x-ray clear phase mask Yang L, Cerrina F, Taylor JW
257 - 262	Strontium silicide termination and silicate epitaxy on (001) Si Norton DP, Park C, Lee YE, Budai JD
263 - 270	Effects of deposition temperature on the conduction mechanisms and reliability of radio frequency sputtered TiO2 thin films Chen SF, Wang CW
271 - 273	Modified design for fabrication of metal based single electron transistors Hofmann K, Spangenberg B, Kurz H
274 - 277	Effects of photowashing treatment on electrical properties of a GaAs metal-semiconductor field-effect transistor Choi KJ, Lee JL, Mun JK, Kim H
278 - 281	Electron field emission from hydrogen-free amorphous carbon-coated ZnO tip array Mao DS, Wang X, Li W, Liu XH, Li Q, Xu JF
282 - 285	Dissociation of As-4 molecules during molecular beam epitaxy of GaAsP on (n11)A and (n11)B GaAs substrates Tatsuoka Y, Uemura M, Kitada T, Shimomura S, Hiyamizu S
286 - 290	Comparative evaluation of protective coatings and focused ion beam chemical vapor deposition processes Kempshall BW, Giannuzzi LA, Prenitzer BI, Stevie FA, Da SX
291 - 294	Photoluminescence of GaSb self-assembled quantum dot layers grown by metalorganic chemical vapor deposition Motlan, Goldys EM, Dao LV
295 - 300	Accuracy evaluation of the point diffraction interferometer for extreme ultraviolet lithography aspheric mirror Otaki K, Yamamoto T, Fukuda Y, Ota K, Nishiyama I, Okazaki S
301 - 305	CH4-based dry etching of high Q InP microdisks Choi SJ, Djordjev K, Choi SJ, Dapkus PD
306 - 310	Incorporation of helium-implant-induced cavities near the active regions of metal-oxide-semiconductor devices: Effects on dc electrical characteristics Terry J, Haworth LI, Gundlach AM, Stevenson JTM, Vishnyakov VM, Donnelly SE
311 - 315	Mechanical system construction for the EX-11 electron beam mask writer: A solution for 100 nm wafer lithography Akeno K, Ogasawara M, Tojo T
316 - 320	Electrostatic mask protection for extreme ultraviolet lithography Moors R, Heerens GJ
321 - 325	Investigation of breakdown characteristic of a novel plasma display panel discharge cell with rotationally symmetric structure Tu Y, Zhang X, Wang BP, Yin HC, Tong LS
326 - 337	Microscopic characterization of electron field emission Nilsson L, Groening O, Kuettel O, Groening P, Schlapbach L
338 - 343	Measuring optical image aberrations with pattern and probe based targets Robins G, Adam K, Neureuther A
344 - 349	Effects of multilayer mask roughness on extreme ultraviolet lithography Deng YF, Pistor T, Neureuther AR
350 - 352	Fast closed loop control of piezoelectric transducers Schitter G, Stemmer A
353 - 363	Detection of chamber conditioning by CF4 plasmas in an inductively coupled plasma reactor Cruden BA, Rao MVVS, Sharma SP, Meyyappan M
364 - 369	Microfabrication of silicon tip structures for multiple-probe scanning tunneling microscopy Bale M, Palmer RE
370 - 372	Membrane mask magnification correction: Alternate technique Murooka K, Lim MH, Smith HI
373 - 378	Ballistic electron emission microscopy of "on-surface" self-assembled InAs dots and wetting layers Rakoczy D, Strasser G, Smoliner J
379 - 381	Deep level centers in silicon introduced by high-energy He irradiation and subsequent annealing Nakano Y, Ishiko M, Tadano H
382 - 385	Physical understanding of moisture induced degradation of nanoporous aluminum oxide thin films Nahar RK
386 - 388	Fabrication of mesoscopic superconducting Nb wires using conventional electron-beam lithographic techniques Kim N, Hansen K, Toppari J, Suppula T, Pekola J
389 - 392	Template-directed vapor-liquid-solid growth of silicon nanowires Lew KK, Reuther C, Carim AH, Redwing JM, Martin BR
393 - 395	Lateral force on fluoroalkylsilane self-assembled monolayers dependent on molecular ordering Sugimura H, Ushiyama K, Hozumi A, Takai O
396 - 399	Lower sheet/contact resistance in shallower junction obtained by F+B mixed implant Lee JH, Lee JY, Yeo IS, Lee SK
400 - 403	Electrical characteristics of ultrathin ZrO2 prepared by wet oxidation of an ultrathin Zr-metal layer Jeon S, Hwang H
406 - 406	Papers from the Sixth International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - 22-26 April 2001 Napa Valley, California -Preface Ukraintsev V, Biesemans S, Majeed F, Miller D, Mulligan A
407 - 413	Technology CAD: Device simulation and characterization Grasser T, Selberherr S
414 - 418	Two-dimensional effects on ultralow energy B implants in Si Giannazzo F, Priolo F, Raineri V, Privitera V, Picariello A, Battaglia A, Moffat S
419 - 421	Defect engineering: An approach on ultrashallow junction in silicon Shao L, Lu XM, Wang XM, Rusakova I, Liu JR, Chu WK
422 - 426	Study of reverse annealing behaviors of p(+)/n ultrashallow junction formed using solid phase epitaxial annealing Jin JY, Liu JN, Jeong U, Mehta S, Jones K
427 - 430	Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si Gwilliam RM, Knights AP, Burrows CP, Coleman PG
431 - 435	Nondestructive analysis of ultrashallow junction implant damage by combined technology of thermal wave and spectroscopic methods Hovinen M, Opsal J
436 - 440	Quantitative determination of dopant dose in shallow implants using the low energy x-ray emission spectroscopy technique Staub PF, Hombourger C, Schuhmacher M
441 - 447	Quantitative analysis of nitrogen in oxynitrides on silicon by MCs+ secondary ion mass spectrometry? Kataoka Y, Shigeno M, Wittmaack K
448 - 450	Backside sputter depth profiling of phosphorus diffusion from a polysilicon source Ronsheim P, Chidambarrao D, Jagannathan B, Hunt D
451 - 458	Spreading resistance roadmap towards and beyond the 70 nm technology node Vandervorst W, Clarysse T, Eyben P
459 - 466	Impact of probe penetration on the electrical characterization of sub-50 nm profiles Clarysse T, Vanhaeren D, Vandervorst W
467 - 470	Developments in ultrashallow spreading resistance analysis Dickey DH
471 - 478	Scanning spreading resistance microscopy and spectroscopy for routine and quantitative two-dimensional carrier profiling Eyben P, Xu M, Duhayon N, Clarysse T, Callewaert S, Vandervorst W
479 - 482	Capacitance sensor with sub-zeptofarad ((10-21) F) sensitivity for scanning capacitance microscopy Tran T, Oliver DR, Thomson DJ, Bridges GE
483 - 487	Characterization of ultrashallow dopant profiles using spreading resistance profiling Tan LS, Tan LCP, Leong MS, Mazur RG, Ye CW
488 - 491	Product wafer monitoring of ultrashallow channel implants with an elastic metal gate Hillard RJ, Howland WH, Mazur RG, Ye W, Variam NK