Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.22, No.1 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (92 articles)

1 - 5	Silicon deposition from BCI3/SiH4 mixtures: Effect of very high boron concentration on microstructure Herner SB, Clark MH
6 - 11	What happens in the annealing of carbon nitride thin films? Xu WT, Fujimoto T, Wang L, Ohchi T, Kojima I
12 - 15	Electrical test structures for mapping nanometer-scale pattern placement errors Wang FM, Pease RFW
16 - 21	Batch fabricated scanning near field optical microscope/atomic force microscopy microprobe integrated with piezoresistive cantilever beam with highly reproducible focused ion beam micromachined aperture Grabiec P, Radojewski J, Zaborowski M, Domanski K, Schenkel T, Rangelow IW
22 - 26	Nanoimprint using three-dimensional microlens mold made by focused-ion-beam chemical vapor deposition Watanabe K, Morita T, Kometani R, Hoshino T, Kondo K, Kanda K, Haruyama Y, Kaito T, Fujita J, Ishida M, Ochiai Y, Tajima T, Matsui S
27 - 30	Fluoropolymers for 157 nm single-layer resists Toriumi M, Ishikawa T, Kodani T, Koh M, Moriya T, Yamashita T, Araki T, Aoyama H, Yamazaki T, Furukawa T, Itani T
31 - 34	Fabrication of FePt nanoparticles for self-organized magnetic array Yang XM, Liu C, Ahner J, Yu J, Klemmer T, Johns E, Weller D
35 - 39	Vertically aligned carbon nanofiber-based field emission electron sources with an integrated focusing electrode Guillorn MA, Yang X, Melechko AV, Hensley DK, Hale MD, Merkulov VI, Simpson ML, Baylor LR, Gardner WL, Lowndes DH
40 - 45	Tantalum film for x-ray lithography mask deposited by electron cyclotron resonance plasma source coupled with divided microwaves Nishimura H, Ono T, Oda M, Matsuo S
46 - 51	Crystallographic effects in micro/nanomachining of single-crystal calcium fluoride Yan JW, Syoji K, Tamaki J
52 - 56	Physical and electrical properties of ultrathin HfO2/HfSixOy stacked gate dielectrics on compressively strained-Si0.74Ge0.26/Si heterolayers Maikap S, Lee JH, Kim DY, Mahapatra R, Ray SK, Song JH, No YS, Choi WK
57 - 59	Key role of nanocrystalline feature in porous polycrystalline silicon diodes for efficient ballistic electron emission Ichihara T, Hatai T, Aizawa K, Komoda T, Kojima A, Koshida N
60 - 64	Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots Hu SF, Yeh RL, Liu RS
65 - 69	Characterization of scratches generated by a multiplaten copper chemical-mechanical polishing process Teo TY, Goh WL, Lim VSK, Leong LS, Tse TY, Chan L
70 - 73	Fabrication of InP-based two-dimensional photonic crystal membrane Xing A, Davanco M, Blumenthal DJ, Hu EL
74 - 76	Nanofabrication using nanotranslated stencil masks and lift off Racz Z, He JL, Srinivasan S, Zhao W, Seabaugh A, Han KP, Ruchhoeft P, Wolfe J
77 - 81	Electrical and optical properties of hydrogen plasma treated n-AIGaN films grown by hydride vapor phase epitaxy Polyakov AY, Smirnov NB, Govorkov AV, Pashkova NV, Shlensky AA, Baik KH, Pearton SJ, Luo B, Ren F, Zavada JM
82 - 89	Milling of submicron channels on gold layer using double charged arsenic ion beam Tseng AA, Insua IA, Park JS, Li B, Vakanas GP
90 - 93	Selective growth of carbon nanotube on scanning probe tips by microwave plasma chemical vapor deposition Pan FM, Liu YB, Chang Y, Chen CY, Tsai TG, Chang MN, Sheu JT
94 - 98	Method of control of nitrogen content in ZnO films: Structural and photoluminescence properties Ma JG, Liu YC, Mu R, Zhang JY, Lu YM, Shen DZ, Fan XW
99 - 103	Exploring the ultimate resolution of positive-tone chemically amplified resists: 26 nm dense lines using extreme ultraviolet interference lithography Golovkina VN, Nealey PF, Cerrina F, Taylor JW, Solak HH, David C, Gobrecht J
L1 - L4	Ionization-assisted deposition of LiF electron-injection layer for organic light-emitting diodes Tanaka K, Amou M, Usui H
104 - 108	Wave-front errors of reference spherical waves in high-numerical aperture point diffraction interferometers Sekine Y, Suzuki A, Hasegawa M, Ouchi C, Hara S, Hasegawa T, Kuramoto Y, Kato S
109 - 115	Silicon-germanium spherical quantum dot infrared photodetectors prepared by the combination of bottom-up and top-down technologies Lin TC, Lee SC, Cheng HH
116 - 119	Roles of copper mechanical characteristics in electropolishing Chang SC, Shieh JM, Fang JY, Wang YL, Dai BT, Feng MS
120 - 125	Properties of Fe-doped semi-insulating GaN structures Polyakov AY, Smirnov NB, Govorkov AV, Pearton SJ
126 - 130	Improvement of resolution in x-ray lithography by reducing secondary electron blur Kise K, Watanabe H, Itoga K, Sumitani H, Amemiya M
131 - 135	Vinyl ethers in ultraviolet curable formulations for step and flash imprint lithography Kim EK, Stacey NA, Smith BJ, Dickey MD, Johnson SC, Trinque BC, Willson CG
136 - 139	Resolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process Yoshizawa M, Oguni K, Nakano H, Amai K, Nohama S, Moriya S, Kitagawa T
140 - 145	Wetting and dissolution studies of fluoropolymers used in 157 nm photolithography applications Markley TJ, Marsella JA, Robertson EA, Parris GE, Zarkov Z, Jakubek V, Ober CK
146 - 151	Combination lithography for photonic-crystal circuits Schneider GJ, Murakowski J, Venkataraman S, Prather DW
152 - 157	High-energy ion projection for deep ion implantation as a low cost high throughput alternative for subsequent epitaxy processes Meijer J, Burchard B, Ivanova K, Volland BE, Rangelow IW, Rub M, Deboy G
158 - 164	Growth of strained Si and strained Ge heterostructures on relaxed Si1-xGex by ultrahigh vacuum chemical vapor deposition Lee ML, Pitera AJ, Fitzgerald EA
165 - 170	Fabrication and characterization of a monolithic thin-film edge emitter device with zinc-oxide-tungsten-based thin-film phosphor Bhatia V, Karpov LK, Weichold MH
171 - 174	Specific contact resistance of Ti/Al/PVAu ohmic contacts to photphorus-doped ZnO thin films Ip K, Heo YW, Baik KH, Norton DP, Pearton SJ, Ren F
175 - 179	Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices Suh YS, Heuss G, Misra V
180 - 184	Self-annealing effect of electrolessly deposited copper thin films based on Co(II)-ethylenediamine as a reducing agent Lee CH, Kim JJ
185 - 188	Nanoimprint lithography of chromophore molecules under high-vacuum conditions Pisignano D, Melcarne A, Mangiullo D, Cingolani R, Gigli G
189 - 195	Negative resist image by dry etching as a surface imaging process using focused ion beams Arshak K, Mihov M, Arshak A, McDonagh D, Sutton D, Newcomb SB
196 - 201	Compositional effects on electrical and mechanical properties in carbon-doped oxide dielectric films: Application of Fourier-transform infrared spectroscopy Andideh E, Lerner M, Palmrose G, El-Mansy S, Scherban T, Xu GH, Blaine J
202 - 211	Model for photoresist trim etch in inductively coupled CF4/O-2 plasma Rauf S
212 - 215	Local excitation of surface plasmon in structured Au films by atomic force anodic oxidation Kim JY, Kim JH, Park KH
216 - 219	Initiation and evolution of phase separation in GaP/InP short-period superlattices Shin B, Chen W, Goldman RS, Song JD, Kim JM, Lee YT
220 - 225	Microfabrication of silicon-nitride micromesh bolometric detectors for planck high frequency instrument Yun MH, Bock J, Holmes W, Koch T, Mulder J, Vasquez RP, Wild L, Lange A
226 - 230	Mechanism of ArF resist-pattern shrinkage in critical-dimension scanning electron microscopy measurement Azuma T, Chiba K, Abe H, Motoki H, Sasaki N
231 - 236	Electron beam prebunching in planar cold cathodes with surface current carrying thin films Krishnan R, Cahay M
237 - 239	Growth of Si wires on a Si(111) substrate under ultrahigh vacuum condition Park HD, Hogan TP
240 - 247	Alteration of Cu conductivity in the size effect regime Rossnagel SM, Kuan TS
248 - 256	Advanced processing techniques for through-wafer interconnects Burkett SL, Qiao X, Temple D, Stoner B, McGuire G
257 - 263	Nanomanipulator and actuator fabrication on glass capillary by focused-ion-beam-chemical vapor deposition Kometani R, Morita T, Watanabe K, Hoshino T, Kondo K, Kanda K, Haruyama Y, Kaito T, Fujita JI, Ishida M, Ochiai Y, Matsui S
264 - 267	Actinic mask metrology for extreme ultraviolet lithography Kinoshita H, Haga T, Hamamoto K, Takada S, Kazui N, Kakunai S, Tsubakino H, Shoki T, Endo M, Watanabe T
268 - 274	Dry cleaning technique for particle removal based on gas-flow and down-flow plasma Momonoi Y, Yokogawa K, Izawa M
275 - 282	Isotropic/anisotropic growth behavior and faceting morphology of Si epitaxial layer selectively grown by cold wall ultrahigh vacuum chemical vapor deposition Lim SH, Song S, Yoon E, Lee JH
283 - 285	Optimized lift-off technique for deposition of high-quality Ti strip on LiNbO3 crystal Zhang DL, Wong WH, Pun EYB
288 - 288	Papers from the Seventh International Workshop on the Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - Preface Ronsheim P
289 - 296	Recent developments and applications of plasma immersion ion implantation Chu PK
297 - 301	Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth Pawlak BJ, Lindsay R, Surdeanu R, Dieu B, Geenen L, Hoflijk I, Richard O, Duffy R, Clarysse T, Brijs B, Vandervorst W, Dachs CJJ
302 - 305	Ultrashallow junction formation by point defect engineering Shao L, Thompson PE, van der Heide PAW, Patel S, Chen QY, Wang XM, Chen H, Liu JR, Chu WK
306 - 311	Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth Lindsay R, Henson K, Vandervorst W, Maex K, Pawlak BJ, Duffy R, Surdeanu R, Stolk P, Kittl JA, Giangrandi S, Pages X, van der Jeugd K
312 - 316	Influence of low temperature preanneals on dopant and defect behavior for low energy Ge preamorphized silicon Camillo-Castillo RA, Law ME, Jones KS, Rubin LM
317 - 322	Ultra-shallow depth profiling with secondary ion mass spectrometry Tomita M, Hongo C, Suzuki M, Takenaka M, Murakoshi A
323 - 326	Development of multiple As delta layer Si reference thin film for shallow junction secondary ion mass spectrometry profiling Moon DW, Lee HI, Kim HK, Kim KJ, Shon HK, Won JY, Lee JC, Toujou F
327 - 331	Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal-oxide-semiconductor field-effect transistors Duda E, Lu SF, Liu CL, Jiang ZX, Lerma J, Barr A, Thean A, Orlowski M, White T, Nguyen BY
332 - 335	Dopant profiling in ultrathin silicon-on-insulator layers Bennett J, Tichy RS
336 - 340	Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O-2(+) beam Giubertoni D, Barozzi M, Anderle M, Bersani M
341 - 345	Accurate in depth profiling of As and P shallow implants by secondary ion mass spectroscopy de Chambost E, Merkulov A, Schuhmacher M, Peres P
346 - 349	Secondary ion mass spectrometry analysis of implanted and rapid thermal processing annealed wafers for sub-100 nanometer technology Ehrke U, Sears A, Lerch W, Paul S, Roters G, Downey DF, Arevalo EA
350 - 354	Secondary ion mass spectrometry backside analysis of barrier layers for copper diffusion Gu C, Pivovarov A, Garcia R, Stevie F, Griffis D, Moran J, Kulig L, Richards JF
355 - 357	X-ray and secondary ion mass spectrometry investigation of activation behavior of self-preamorphized silicon substrate Suvkhanov A, Mirabedini M, Hornback V, Chen ZH
358 - 363	Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy Fukutome H, Arimoto H, Hasegawa S, Nakashima H
364 - 368	Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal-oxide-semiconductor technology using scanning spreading resistance microscopy Eyben P, Alvarez D, Jurczak M, Rooyackers R, De Keersgieter A, Augendre E, Vandervorst W
369 - 372	Investigation of two-dimensional diffusion of the self-interstitials in crystalline silicon at 800 degrees C and at room temperature Giannazzo F, Mirabella S, Priolo F, Goghero D, Raineri V
373 - 376	Two-dimensional ultrashallow junction characterization of metal-oxide-semiconductor field effect transistors with strained silicon Wang XD, Liu CL, Thean A, Duda E, Liu R, Xie QH, Lu SF, Barr A, White T, Nguyen BY, Orlowski M
377 - 380	High-resolution scanning spreading resistance microscopy of surrounding-gate transistors Alvarez D, Schomann S, Goebel B, Manger D, Schlosser T, Slesazeck S, Hartwich J, Kretz J, Eyben P, Fouchier M, Vandervorst W
381 - 384	Study on poly depletion in sub-0.1 mu m metal-oxide-semiconductor field effect transistors by scanning capacitance microscopy Wang YG, Edwards H, Ukraintsev V, Wu J, Chen J, Waller J, Woodall D, Scott DB, Machala C, Ekbote S, Tsao A
385 - 393	Assessing the performance of two-dimensional dopant profiling techniques Duhayon N, Eyber P, Fouchier M, Clarysee T, Vandervorst W, Alvarez D, Schoemann S, Ciappa M, Stangoni M, Fichtner W, Formanek P, Kittler M, Raineri V, Giannazzo F, Goghero D, Rosenwaks Y, Shikler R, Saraf S, Sadewasser S, Barreau N, Glatzel T, Verheijen M, Mentink SAM, von Sprekelsen M, Maltezopoulos T, Wiesendanger R, Hellemans L
394 - 398	Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon Giannazzo F, Goghero D, Raineri V, Mirabella S, Priolo F, Liotta SF, Rinaudo S
399 - 405	Towards reproducible scanning capacitance microscope image interpretation Kopanski JJ, Marchiando JF, Rennex BG, Simons D, Chau Q
406 - 410	Accuracy of scanning capacitance microscopy for the delineation of electrical junctions Stangoni M, Ciappa M, Fichtner W
411 - 416	On calculating scanning capacitance microscopy data for a dopant profile in semiconductors Marchiando JF, Kopanski JJ
417 - 421	PSPICE analysis of a scanning capacitance microscope sensor Buh GH, Tran C, Kopanski JJ
422 - 426	Carrier profiling via scanning tunneling spectroscopy: Comparison with scanning capacitance microscopy Liu FY, Griffin PB, Plummer JD, Lyding JW, Moran JM, Richards JF, Kulig L
427 - 431	Two-dimensional dopant profiling of ultrashallow junction with off-axis electron holography: A round robin experiment Frost BG, Thesen A, Joy DC, Foran B, Brand K
432 - 438	Nondestructive dopant profile measurement and its quantitative analysis using the nanocapacitance-voltage method Kang ES, Hwang HJ, Lee GY
439 - 443	Carrier illumination for characterization of ultrashallow doping profiles Clarysse T, Lindsay R, Vandervorst W, Budiarto E, Borden P
444 - 449	Metal film characterization with qualified spreading resistance Clarysse T, Hoflijk I, Zhang W, Maex K, Vandervorst W
450 - 454	Electrical characterization of silicon-on-insulator structures with a nondamaging elastic-metal gate Hillard RJ, Howland WH, Tan LC, Ye W
455 - 458	Diffusion and segregation of shallow As, and Sb junctions in silicon Kruger D, Rucker H, Heinemann B, Melnik V, Kurps R, Bolze D
459 - 462	Secondary defect formation in bonded silicon-on-insulator after boron implantation Saavedra AF, King AC, Jones KS, Jones EC, Chan KK
463 - 467	Analytical damage tables for crystalline silicon Chan HY, Benistant F, Srinivasan MP, Erlebach A, Zechner C
468 - 470	{311} defect evolution in ion-implanted, relazed Si1-xGex Crosby R, Jones KS, Law ME, Larsen AN, Hansen JL
471 - 476	Effect of nitride sidewall spacer process on boron dose loss in ultrashallow junction formation Kohli P, Jain A, Bu H, Chakravarthi S, Machala C, Dunham ST, Banerjee SK