Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.12, No.2 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (179 articles)

515 - 529	Contributions of Scanning Probe Microscopy and Spectroscopy to the Investigation and Fabrication of Nanometer-Scale Structures Wiesendanger R
530 - 535	Low Damage Etching of InGaAs/AlGaAs by the Electron-Cyclotron-Resonance Plasma with Cl2/He Mixture for Heterojunction Bipolar-Transistors Miyakuni S, Sakai M, Hattori R, Izumi S, Shimura T, Sato K, Takano H, Otsubo M
536 - 539	Reactive Ion Etching of Alingap and GaAs in Sicl4/CH4/Ar-Based Plasmas Chang CV, Rijpers JC
540 - 546	Electron-Cyclotron-Resonance Plasma Oxidation Studies of InP Hu YZ, Joseph J, Irene EA
547 - 550	Optimal Surface Cleaning of GaAs (001) with Atomic-Hydrogen Petit EJ, Houzay F
551 - 554	Arsenic Capping and Decapping of Inyal1-Yas(100) Grown by Molecular-Beam Epitaxy Clark SA, Dunscombe CJ, Woolf DA, Wilks SP, Williams RH
555 - 566	Investigation of Chemically Assisted Ion-Beam Etching for the Fabrication of Vertical, Ultrahigh Quality Facets in GaAs Hagberg M, Jonsson B, Larsson AG
567 - 573	Damage to Si Substrates During SiO2 Etching - A Comparison of Reactive Ion Etching and Magnetron-Enhanced Reactive Ion Etching Gu T, Ditizio RA, Fonash SJ, Awadelkarim OO, Ruzyllo J, Collins RW, Leary HJ
574 - 580	Cleaning of Silicon Surfaces by Hydrogen Multipolar Microwave Plasma Excited by Distributed Electron-Cyclotron-Resonance Raynaud P, Pomot C
581 - 584	Silicon Dioxide Deposition by Electron-Cyclotron-Resonance Plasma - Kinetic and Ellipsometric Studies Hernandez MJ, Garrido J, Piqueras J
585 - 588	High-Temperature Deposition of Sin Films Using Low-Pressure Chemical-Vapor-Deposition System for X-Ray Mask Application Ohta T, Kumar R, Yamashita Y, Hoga H
589 - 600	Fundamental Principles of Phase-Shifting Masks by Fourier Optics - Theory and Experimental-Verification Ronse K, Debeeck MO, Vandenhove L
601 - 604	Tungsten Trench Etching in a Magnetically Enhanced Triode Reactor Pendharkar SV, Wolfe JC
605 - 612	Effects of Substrate-Temperature and Angular Position on the Properties of Ion-Beam Sputter-Deposited Fe Films on (100) GaAs Substrates Bernstein SD, Wong TY, Tustison RW
613 - 615	Selective Deposition of Metals on Submicron Resist Patterns Petermann J, Hoffmann T, Martinezsalazar J
616 - 619	Improvement in Molecular-Beam Epitaxy Machine Reliability Using Preventive Maintenance Ebert CW, Peticolas LJ, Reynolds CL, Vuong HH
620 - 621	Optical Beam-Deflection Scanning Force Microscope with Easy Cantilever-Laser Beam Alignment Sugihara K, Sakai A, Matsuda T, Toyosaki M, Tanaka K, Matsuura A, Tsukada S
628 - 628	Papers from the 6th International Vacuum Microelectronics Conference - 12-15 July 1993 Newport, Rhode-Island - Preface Hollis MA
629 - 632	Arrays of Gated Field-Emitter Cones Having 0.32-Mu-M Tip-to-Tip Spacing Bozler CO, Harris CT, Rabe S, Rathman DD, Hollis MA, Smith HI
633 - 637	Chemical-Vapor-Deposition and Plasma-Enhanced Chemical-Vapor-Deposition Carbonization of Silicon Microtips Zhirnov VV, Givargizov EI
638 - 643	Process Characterization and Analysis of Sealed Vacuum Microelectronic Devices Mei Q, Zurn S, Polla DL
644 - 647	Knife-Edge Thin-Film Field-Emission Cathodes on (110) Silicon-Wafers Lee B, Elliott TS, Mazumdar TK, Mcintyre PM, Pang Y, Trost HJ
648 - 651	Silicon Vacuum Microdiode with on-Chip Anode Yoon YJ, Lu YC, Lalevic B, Zeto RJ
652 - 654	Oxidized Amorphous-Silicon as Gate Insulator for Silicon Tips Peters D, Paulus I, Stephani D
655 - 661	Space-Charge Effects in Spindt-Type Field-Emission Cathodes Vanveen GN
662 - 665	Field-Emission from Pyramidal Cathodes Covered in Porous Silicon Wilshaw PR, Boswell EC
666 - 671	Improved Monolithic Vacuum Field-Emission Diodes Legg JD, Mason ME, Williams RT, Weichold MH
672 - 675	Characterization of Silicon Field-Emission Microtriodes Liu D, Marcus RB
676 - 679	Fabrication and Characterization of Silicon Field-Emission Diodes and Triodes Li Q, Yuan MY, Kang WP, Tang SH, Xu JF, Zhang D, Wu JL
680 - 684	Gated Chromium Volcano Emitters Pogemiller JE, Busta HH, Zimmerman BJ
685 - 688	Stability of the Emission of a Microtip Py C, Baptist R
689 - 692	Scaling of Emission Currents and of Current Fluctuations of Gated Silicon Emitter Ensembles Busta HH, Pogemiller JE, Zimmerman BJ
693 - 696	Bright-Field Analysis of Field-Emission Cones Using High-Resolution Transmission Electron-Microscopy and the Effect of Structural-Properties on Current Stability Goodhue WD, Nitishin PM, Harris CT, Bozler CO, Rathman DD, Johnson GD, Hollis MA
697 - 699	SiO2-Induced Silicon Emitter Emission Instability Bintz WJ, Mcgruer NE
700 - 702	Activation, Stabilization Degradation, and Lifetime Predictions of Refractory Thin-Films Emitters Operated in Cold-Cathode Magnetrons Kopylov MF
703 - 704	Diffusion on an Elliptic Field-Emission Cathode Eremchenko DV, Makhov VI
705 - 709	Atom-Probe Analysis and Field-Emission Studies of Silicon King RA, Mackenzie RA, Smith GD, Cade NA
710 - 712	Investigation of the Operating Modes of Gated Vacuum Field Emitter Arrays to Reduce Failure Rates Maessick S, Xia Z, Chan C, Browning J
713 - 716	Characterization of Gridded Field Emitters Huang M, Mackenzie RA, Godfrey TJ, Smith GD
717 - 721	Modification of Si Field Emitter Surfaces by Chemical Conversion to SiC Liu J, Son UT, Stepanova AN, Christensen KN, Wojak GJ, Givargizov EI, Bachmann KJ, Hren JJ
722 - 726	Transition-Metal Carbides for Use as Field-Emission Cathodes Mackie WA, Hartman RL, Anderson MA, Davis PR
727 - 736	Energy-Exchange Processes in Electron-Emission at High Fields and Temperatures Chung MS, Cutler PH, Miskovsky NM, Sullivan TE
737 - 744	Calculated IV Characteristics of a Gold Liquid-Metal Ion-Source for a Prototype Emitter Modeled as a Cone Sphere Miskovsky SN, Miskovsky NM, Cutler PH
745 - 748	Calculations of Capacitance and Electric-Field of a Vacuum Field-Effect Device Huang ZH, Cutler PH, Miskovsky NM, Sullivan TE
749 - 753	Field-Emission Diode Characterization Through Model Parameters Extraction from Current-Voltage Experimental-Data Nicolaescu D, Avramescu V
754 - 758	Use of Boundary-Element Methods in-Field Emission Computations Hartman RL, Mackie WA, Davis PR
759 - 763	Technological Parameters Distribution Effects on the Current-Voltage Characteristics of Field Emitter Arrays Nicolaescu D
764 - 769	Simulations of Fabricated Field Emitter Structures Hong D, Aslam M, Feldmann M, Olinger M
770 - 775	Time-Dependent, Self-Consistent Simulations of Field-Emission from Silicon Using the Wigner Distribution Function Jensen KL, Ganguly AK
776 - 780	Field-Emission from an Elliptic Boss - Exact and Approximate Forms for Area Factors and Currents Jensen KL, Zaidman EG
781 - 784	New Electron Excited Light-Emitting Materials Vecht A, Smith DW, Chadha SS, Gibbons CS, Koh J, Morton D
785 - 789	Phosphor Selection Constraints in Application of Gated Field-Emission Microcathodes to Flat-Panel Displays Chakhovskoi AG, Kesling WD, Trujillo JT, Hunt CE
790 - 794	Deflection Microwave and Millimeter-Wave Amplifiers Tang CM, Lau YY, Swyden TA
795 - 800	Study of the IV Characteristics of Planar-Doped-Barrier Electron Emitters Jiang WN, Mishra UK
801 - 805	Energy-Distribution of Tunneling Emission from Si-Gate Metal-Oxide-Semiconductor Cathode Yokoo K, Sato S, Koshita G, Amano I, Murota J, Ono S
813 - 814	Papers from the 1st International Workshop on Plasma-Based Ion-Implantation - 4-6 August 1993 University-of-Wisconsin-Madison Madison, Wisconsin - Preface Conrad JR, Sridharan K
815 - 820	Metal Plasma Immersion Ion-Implantation and Deposition Using Vacuum-Arc Plasma Sources Anders A, Anders S, Brown IG, Dickinson MR, Macgill RA
821 - 822	50-kv Pulse-Generator for Plasma Source Ion-Implantation Bohm G, Gunzel R
823 - 827	Metal-Ion Implantation - Conventional Versus Immersion Brown IG, Anders A, Anders S, Dickinson MR, Macgill RA
828 - 832	Plasma Ion-Implantation Technology for Broad Industrial Application Deb D, Siambis J, Symons R
833 - 837	Analytical Modeling of Plasma Immersion Ion-Implantation Target Current Using the Spice Circuit Simulator En W, Cheung NW
838 - 842	High-Power Modulator for Plasma Ion-Implantation Goebel DM
843 - 849	Overview of Plasma Source Ion-Implantation Research at University-of-Wisconsin-Madison Malik SM, Sridharan K, Fetherston RP, Chen A, Conrad JR
850 - 853	Plasma Ion-Implantation Technology at Hughes-Research-Laboratories Matossian JN
854 - 860	Survey of High-Voltage Pulse Technology Suitable for Large-Scale Plasma Source Ion-Implantation Processes Reass WA
861 - 866	Magnetic Insulation of Secondary Electrons in Plasma Source Ion-Implantation Rej DJ, Wood BP, Faehl RJ, Fleischmann HH
867 - 869	Development of Plasma Source Ion-Implantation in China Tang BY
870 - 874	Initial Operation of a Large-Scale Plasma Source Ion-Implantation Experiment Wood BP, Henins I, Gribble RJ, Reass WA, Faehl RJ, Nastasi MA, Rej DJ
875 - 879	Measurements of Potentials and Sheath Formation in Plasma Immersion Ion-Implantation Collins GA, Tendys J
880 - 883	Model for Expanding Sheaths and Surface Charging at Dielectric Surfaces During Plasma Source Ion-Implantation Emmert GA
884 - 888	Application of Particle-in-Cell Simulation to Plasma Source Ion-Implantation Faehl R, Devolder B, Wood B
889 - 896	2-Dimensional Fluid Modeling of Time-Dependent Plasma Sheath Hong MP, Emmert GA
897 - 900	Ion-Matrix Sheath Around a Square Bar Sheridan TE, Alport MJ
901 - 904	2 Ion Fluid Model for Plasma Source Ion-Implantation Thomas K, Alport MJ, Sheridan TE
905 - 909	Energy and Angle Distributions of Ions Striking the Spherical Target in Plasma Source Ion-Implantation Wang DZ, Ma TC, Deng XL
910 - 917	Target Temperature Prediction for Plasma Source Ion-Implantation Blanchard JP
918 - 922	Dose Analysis of Nitrogen Plasma Source Ion-Implantation Treatment of Titanium-Alloys Chen A, Firmiss J, Conrad JR
923 - 926	Nitrogen Profiles of High-Dose, High-Temperature Plasma Source Ion-Implantation Treated Austenitic Stainless-Steel Franklyn CB, Nothnagel G
927 - 930	Plasma Source Ion-Implantation of Oxygen and Nitrogen in Aluminum Gunzel R, Wieser E, Richter E, Steffen J
931 - 934	Structure and Wear Behavior of Nitrogen-Implanted Aluminum-Alloys Xia LF, Wang RZ, Ma XX, Sun Y
935 - 939	Significance of Nitrogen Mass-Transfer Mechanisms on the Nitriding Behavior of Austenitic Stainless-Steel Samandi M, Shedden BA, Bell T, Collins GA, Hutchings R, Tendys J
940 - 944	Enhanced Pitting Corrosion-Resistance of 304L Stainless-Steel by Plasma Ion-Implantation Smith PP, Buchanan RA, Roth JR, Kamath SG
945 - 950	Nitrogen Plasma Source Ion-Implantation of Aluminum Walter KC
951 - 955	Structural Characterization of Plasma-Doped Silicon by High-Resolution X-Ray-Diffraction Chapek DL, Conrad JR, Matyi RJ, Felch SB
956 - 961	Anomalous Behavior of Shallow BF3 Plasma Immersion Ion-Implantation Jones EC, En W, Ogawa S, Fraser DB, Cheung NW
962 - 968	Plasma Immersion Ion-Implantation Doping Experiments for Microelectronics Qin S, Chan C
969 - 972	Characteristics of a Plasma Doping System for Semiconductor-Device Fabrication Sheng T, Felch SB, Cooper CB
973 - 976	Plasma Immersion Ion-Implantation for Semiconductor Thin-Film Growth Tuszewski M, Scheuer JT, Campbell IH, Laurich BK
977 - 980	Mechanical-Properties of Si-Diamond-Like Carbon-Films Formed by Ion-Beam-Assisted Deposition Fountzoulas CG, Kattamis TZ, Demaree JD, Kosik WE, Franzen W, Hirvonen JK
981 - 985	Carbonaceous Surface-Layers Deposited on Tin Coatings by Ion-Implantation Franck M, Blanpain B, Celis JP, Roos JR, Pattyn H
986 - 990	Ion-Beam-Induced Densification of Sol-Gel Ceramic Thin-Films Levine TE, Revesz P, Giannelis EP, Mayer JW
991 - 997	Potential Applications of Fusion Neutral Beam Facilities for Advanced Material Processing Williams JM, Tsai CC, Stirling WL, Whealton JH
1007 - 1007	Papers from the 13th North-American Conference on Molecular-Beam Epitaxy - 13-15 September 1993 Stanford-University Stanford, California - Preface Melloch MR
1009 - 1012	Ordered and Randomly Disordered AlAs/GaAs Short-Period Superlattices Arent DJ, Alonso R, Horner G, Bode M, Olson JM, Yin X, Delong MC, Springthorpe AJ, Majeed A
1013 - 1015	Growth Optimization of Molecular-Beam Epitaxy-Grown InAlAs on InP Choi WY, Fonstad CG
1016 - 1018	Modulated Arsenic Molecular-Beam Epitaxial-Growth of In0.48Al0.52As Chou ST, Cheng KY
1019 - 1022	Growth-Studies on In0.5Ga0.5As/AlGaAs Quantum-Wells Grown on GaAs with a Linearly Graded InGaAs Buffer Chui HC, Harris JS
1023 - 1025	Accurate Measurements of Transients and Intentional Rates of Change in Molecular-Beam Epitaxy Growth-Rate Calibrations Fernandez R, Harwit A, Kinell D
1026 - 1028	External Photoluminescence Efficiency and Minority-Carrier Lifetime of (Al,Ga)as/GaAs Multi-Quantum-Well Samples Grown by Molecular-Beam Epitaxy Using Both As2 and As4 Foxon CT, Cheng TS, Dawson P, Lacklison DE, Orton JW, Vandervleuten W, Hughes OH, Henini M
1029 - 1033	Bonding and Migration of in-111 Atoms on GaAs-Surfaces Studied by Perturbed-Angular-Correlation Spectroscopy Fu JM, Adams JM, Catchen GL, Miller DL, Kim J, Gallagher MC, Willis RF
1034 - 1037	Structural-Properties of Highly Mismatched InGaAs-Based Devices Grown by Molecular-Beam Epitaxy on GaAs Substrates Goorsky MS, Eldredge JW, Lord SM, Harris JS
1038 - 1042	Interface Analysis of Dry-Etched and Molecular-Beam Epitaxial Regrown AlGaAs Grober LH, Hong M, Mannaerts JP, Freund RS, Luftman HS, Chu SN
1043 - 1046	Extremely High Uniformity of Interfaces in GaAs/AlGaAs Quantum-Wells Grown on (411)A GaAs Substrates by Molecular-Beam Epitaxy Hiyamizu S, Shimomura S, Wakejima A, Kaneko S, Adachi A, Okamoto Y, Sano N, Murase K
1047 - 1049	In-Situ Nonalloyed Ohmic Contacts to P-GaAs Hong M, Vakhshoori D, Mannaerts JP, Thiel FA, Wynn JD
1050 - 1052	Effects of As4 Flux on Reflection High-Energy Electron-Diffraction Oscillations During Growth of GaAs at Low-Temperatures Ibbetson JP, Mirin RP, Mishra UK, Gossard AC
1053 - 1055	Quantum-Confined Stark Shift Observed by Electroluminescence and Circular-Polarized Luminescence Excitation Spectroscopy in GaAs/AlGaAs Coupled Quantum-Wells Kato Y, Takahashi Y, Fukatsu S, Shiraki Y, Ito R
1056 - 1058	Raman-Scattering Study of the Intermixing of AlAs Monolayers in GaAs Grown by Molecular-Beam Epitaxy Katzer DS, Shanabrook BV, Gammon D
1059 - 1062	Low-Temperature Growth and Characterization of GaAs Epitaxial Layer on (111)B GaAs Substrates Kim GH, Gray JL, Yoo HM, Ohuchi FS
1063 - 1066	Molecular-Beam Epitaxy Growth of Quantum Dots from Strained Coherent Uniform Islands of InGaAs on GaAs Leonard D, Krishnamurthy M, Fafard S, Merz JL, Petroff PM
1067 - 1070	Molecular-Beam Epitaxial-Growth of GaAs on CaF2/Si(111) Substrate Li WD, Anan T, Schowalter LJ
1071 - 1074	Realization of 3-Dimensionally Confined Structures via One-Step in-Situ Molecular-Beam Epitaxy on Appropriately Patterned GaAs(111)B and GaAs(001) Rajkumar KC, Madhukar A, Chen P, Konkar A, Chen L, Rammohan K, Rich DH
1075 - 1077	Application of the Digital Alloy Composition Grading Technique to Strained InGaAs/GaAs/AlGaAs Diode-Laser Active Regions Cody JG, Mathine DL, Droopad R, Maracas GN, Rajesh R, Carpenter RW
1078 - 1081	Determination of AlAs Mole Fraction in AlxGa1-xAs Using Raman-Spectroscopy and X-Ray-Diffraction Solomon GS, Kirillov D, Chui HC, Harris JS
1082 - 1085	Random-Period Superlattice Quantum-Wells Shih YC, Sadra K, Streetman BG
1086 - 1090	Characterization and Improvement of the Layer Uniformity for Large-Area Quantum-Well Device Arrays Grown in an Intevac Varian Gen-II Molecular-Beam Epitaxy System Svensson SP, Towner FJ
1091 - 1094	Molecular-Beam Epitaxy of Mnas Thin-Films on GaAs Tanaka M, Harbison JP, Sands T, Cheeks TL, Keramidas VG, Rothberg GM
1095 - 1098	Study of Lattice-Mismatched (in,Ga)as/GaAs Heterostructures on the Unconventional (110) GaAs Surface Sun DC, Towe E, Bennett BR
1099 - 1101	Growth of the (in,Al,Ga)as Quaternary Alloy System on GaAs at Low Substrate Temperatures by Molecular-Beam Epitaxy Towe E, Sun D, Bennett BR
1102 - 1105	Lateral Variation of Indium Content in InGaAs Grown on GaAs Channeled Substrates by Molecular-Beam Epitaxy Wakejima A, Inoue A, Kitada T, Tomita N, Shimomura S, Hiyamizu S, Fujii M, Yamamoto T, Kobayashi K, Sano N
1106 - 1109	Electrical Characteristics of InP Grown by Molecular-Beam Epitaxy Using a Valved Phosphorus Cracking Cell Baillargeon JN, Cho AY, Fischer RJ, Pearah PJ, Cheng KY
1110 - 1112	Chemical Beam Epitaxy of Strain Balanced Gap/GaAs/InP/GaAs Superlattices Bensaoula AH, Freundlich A, Bensaoula A, Rossignol V, Ponchet A
1113 - 1115	Characterization of High-Quality GaInP/GaAs Superlattices Grown on GaAs and Si Substrates by Gas-Source Molecular-Beam Epitaxy Jelen C, Slivken S, He XG, Razeghi M, Shastry S
1116 - 1118	Structural and Optical Characterizations of InAsP/InP Strained Multiple-Quantum Wells Grown on InP(111)B Substrates Hou HQ, Tu CW, Shan W, Hwang SJ, Song JJ, Chu SN
1119 - 1121	Operation of a Molecular-Beam Epitaxy Machine Employing a Valved Solid Phosphorus Source Wicks GW, Koch MW, Johnson FG, Varriano JA, Kohnke GE, Colombo P
1122 - 1124	Molecular-Beam Epitaxy-Grown Alassb/Gaassb Distributed-Bragg-Reflector on InP Substrate Operating Near 1.55-Mu-M Blum O, Fritz IJ, Dawson LR, Howard AJ, Headley TJ, Olsen JA, Klem JF, Drummond TJ
1125 - 1128	Reflection High-Energy Electron-Diffraction Observation of Exchange-Reaction Dynamics on InAs Surfaces Collins DA, Wang MW, Grant RW, Mcgill TC
1129 - 1132	Recombination Lifetime in InAs-Ga1-xInxSb Superlattices Youngdale ER, Meyer JR, Hoffman CA, Bartoli FJ, Miles RH, Chow DH
1133 - 1135	Reflection High-Energy Electron-Diffraction Study of the GaSb Surface During Molecular-Beam Epitaxy Yano M, Yamamoto K, Utatsu T, Inoue M
1136 - 1139	Molecular-Beam Epitaxy Growth of Bi Epilayers and Bi-CdTe Superlattices Divenere A, Yi XJ, Hou CL, Wang HC, Chen J, Ketterson JB, Wong GK, Meyer JR, Hoffman CA, Bartoli FJ
1140 - 1142	1st Indications of Spontaneous Ordering in Znse0.50Te0.50 Alloy Luo H, Samarth N, Short SW, Xin SH, Furdyna JK, Ahrenkiel P, Bode MH, Aljassim MM
1143 - 1145	Migration-Enhanced Epitaxy and Optical-Properties of ZnSe/CdSe Digital Alloy Quantum-Wells Short SW, Luo H, Xin S, Yin A, Pareek A, Dobrowolska M, Furdyna JK
1146 - 1149	Characteristic Zeeman Patterns in Novel Graded Gap II-VI Quantum-Well Structures Hagston WE, Weston SJ, Oneill M, Stirner T, Harrison P, Hogg JH, Ashenford DE, Lunn B
1150 - 1152	Exciton Dynamics in Multiquantum-Well CdTe-Cd1-xMnxTe Systems Stirner T, Hagston WE, Oneill M, Harrison P
1153 - 1155	Gas-Source Molecular-Beam Epitaxy Growth of ZnSe on Novel Buffer Layers Lu K, Fisher PA, House JL, Ho E, Coronado CA, Petrich GS, Kolodziejski LA, Hua GC, Otsuka N
1156 - 1159	Time-of-Flight Measurement of Carrier Transport and Carrier Collection in Strained Si1-xGex/Si Quantum-Wells Fukatsu S, Fujiwara A, Muraki K, Takahashi Y, Shiraki Y
1160 - 1162	Room-Temperature Photoluminescence in Strained Si1-xGex/Si Quantum-Wells Fukatsu S, Sunamura H, Shiraki Y
1163 - 1166	Novel Integration of a Group IV Electron-Beam Deposition Capability with a III-V Molecular-Beam Epitaxy System Lee HP, Szalkowski FJ, Sato DL, Liu X, Ranalli E, George T
1167 - 1169	Study of Interaction Between Incident Silicon and Germanium Fluxes and SiO2 Layer Using Solid-Source Molecular-Beam Epitaxy Yun SJ, Lee SC, Kim BW, Kang SW
1170 - 1173	Atomic Layer-by-Layer Epitaxy of Cuprate Superconductors Bozovic I, Eckstein JN, Virshup GF
1174 - 1177	Growth Morphologies of (001), (100), and (010) Oriented Er5Ba7Cu12Oy High-Temperature Superconductor Thin-Films on Various Substrates Choudhary KM, Seshadri P, Black M
1178 - 1180	Effects of Oxygen on the Sublimation of Alkaline-Earths from Effusion Cells Hellman ES, Hartford EH
1181 - 1183	Atomically Controlled Growth of GaAs/NiAl/GaAs Structures by Molecular-Beam Epitaxy Hirono S, Tanimoto M, Inoue N
1184 - 1185	Stabilized Alpha-Sn Grown at High-Temperature by Molecular-Beam Epitaxy Kimata M, Suzuki T, Saino K, Kawamura K, Hobbs A
1186 - 1189	Growth of Group-III Nitrides on Si(111) by Plasma-Assisted Molecular-Beam Epitaxy Stevens KS, Ohtani A, Schwartzman AF, Beresford R
1190 - 1192	Carbon P+ Doping of Molecular-Beam Epitaxial GaAs Films Using Carbon Tetrabromide Lemonias PJ, Hoke WE, Weir DG, Hendriks HT
1193 - 1196	Carbon Doping of InGaAs in Solid-Source Molecular-Beam Epitaxy Using Carbon Tetrabromide Hwang WY, Miller DL, Chen YK, Humphrey DA
1197 - 1199	Some Doping Results in ZnSe Grown by Molecular-Beam Epitaxy Li LK, Wang WI, Gaines JM, Petruzzello J, Marshall T
1200 - 1202	Carbon Doping by a Compact Electron-Beam Source Vanhove JM, Chow PP, Rosamond MF, Carpenter GL, Chow LA
1203 - 1206	Boron Delta-Doping in Si and SiGe and Its Application Toward Field-Effect Transistor Devices Carns TK, Zheng X, Wang KL, Wu SL, Wang SJ
1207 - 1210	Pyrometric Interferometry for Real-Time Molecular-Beam Epitaxy Process Monitoring Bobel FG, Moller H, Wowchak A, Hertl B, Vanhove J, Chow LA, Chow PP
1211 - 1213	Determination of Molecular-Beam Epitaxial-Growth Parameters by Ellipsometry Droopad R, Kuo CH, Anand S, Choi KY, Maracas GN
1214 - 1216	Measurement of GaAs Temperature-Dependent Optical-Constants by Spectroscopic Ellipsometry Kuo CH, Anand S, Droopad R, Choi KY, Maracas GN
1217 - 1220	Dual-Beam Atomic-Absorption Spectroscopy for Controlling Thin-Film Deposition Rates Benerofe SJ, Ahn CH, Wang MM, Kihlstrom KE, Do KB, Arnason SB, Fejer MM, Geballe TH, Beasley MR, Hammond RH
1221 - 1224	In-Situ Thickness Monitoring and Control for Highly Reproducible Growth of Distributed Bragg Reflectors Houng YM, Tan MR, Liang BW, Wang SY, Mars DE
1225 - 1228	Factors Affecting the Temperature Uniformity of Semiconductor Substrates in Molecular-Beam Epitaxy Johnson SR, Lavoie C, Nodwell E, Nissen MK, Tiedje T, Mackenzie JA
1229 - 1231	Efficient Liquid-Nitrogen Supply-System for the Cooling Shroud in a Molecular-Beam Epitaxy System Cook JW, Schetzina JF
1232 - 1235	Atomic Nitrogen-Production in a Molecular-Beam Epitaxy Compatible Electron-Cyclotron-Resonance Plasma Source Vaudo RP, Cook JW, Schetzina JF
1236 - 1238	Reflection High-Energy Electron-Diffraction Intensity Oscillations During Molecular-Beam Epitaxy on Rotating Substrates Vanderwagt JP, Harris JS
1239 - 1241	Molecular-Beam Epitaxial-Growth and Properties of Si-Doped GaAs/AlGaAs Quantum-Wells Asom MT, Livescu G, Swaminathan V, Geva M, Luther L
1242 - 1245	Electrical and Optical-Properties of Heavily N-Doped GaSb-AlSb Multiquantum-Well Structures for Infrared Photodetector Applications Brar B, Samoska L, Kroemer H, English JH
1246 - 1250	Growth of GaAs Light Modulators on Si by Gas-Source Molecular-Beam Epitaxy for 850 nm Optical Interconnects Cunningham JE, Goossen KW, Walker JA, Jan W, Santos M, Miller DA
1251 - 1253	Chemical Beam Epitaxy of InP-Based Solar-Cells and Tunnel-Junctions Vilela MF, Rossignol V, Bensaoula A, Medelci N, Freundlich A
1254 - 1257	Molecular-Beam Epitaxy Growth of Pseudomorphic II-VI Multilayered Structures for Blue-Green Laser-Diodes and Light-Emitting-Diodes Han J, He L, Grillo DC, Clark SM, Gunshor RL, Jeon H, Salokatve A, Nurmikko AV, Hua GC, Otsuka N
1258 - 1261	Buried Heterostructure Laser-Diodes Fabricated Using in-Situ Processing Hong M, Vakhshoori D, Grober LH, Mannaerts JP, Asom MT, Wynn JD, Thiel FA, Freund RS
1262 - 1265	Blue-Green ZnSe-Zncdse Light-Emitting-Diodes and Photopumped Laser Structures Grown by Molecular-Beam Epitaxy on ZnSe Substrates Ren J, Eason DB, Yu Z, Sneed B, Cook JW, Schetzina JF, Elmasry NA, Yang XH, Song JJ, Cantwell G, Harsh WC
1266 - 1268	Molecular-Beam Epitaxy Growth of High-Performance Midinfrared Diode-Lasers Turner GW, Choi HK, Calawa DR, Pantano JV, Chludzinski JW
1269 - 1272	Photocontrolled Double-Barrier Resonant-Tunneling Diode Li HS, Chen YW, Wang KL, Pan DS, Chen LP, Liu JM
1273 - 1276	Studies of Si Segregation in GaAs Using Current-Voltage Characteristics of Quantum-Well Infrared Photodetectors Wasilewski ZR, Liu HC, Buchanan M
1277 - 1279	One-Dimensional Wire Formed by Molecular-Beam Epitaxial Regrowth on a Patterned Pnpnp GaAs Substrate Burroughes JH, Grimshaw MP, Leadbeater ML, Ritchie DA, Pepper M, Jones GA
1280 - 1282	High-Quality Strained Quantum Wires Grown by Molecular-Beam Epitaxy on (100) GaAs Substrate Chen YP, Reed JD, Schaff WJ, Eastman LF
1283 - 1285	Current-Controlled Negative Differential Resistance in InAs/AlxGa1-Xsb Tunnel Structures Chow DH, Schulman JN
1286 - 1289	50 nm GaAs/AlAs Wire Structures Grown on Corrugated GaAs Miller DJ, Harris JS
1290 - 1292	Effect of the Proximity of an Ex-Situ Patterned Interface on the Quality of 2-Dimensional Electron Gases at GaAs/AlGaAs Heterojunctions Grimshaw MP, Ritchie DA, Burroughs JH, Jones GA
1293 - 1295	Fabrication of Independent Contacts to 2 Closely Spaced 2-Dimensional Electron Gases Using Molecular-Beam Epitaxy Regrowth and in-Situ Focused Ion-Beam Lithography Brown KM, Linfield EH, Ritchie DA, Jones GA, Grimshaw MP, Churchill AC
1296 - 1299	Optimization of High-Mobility 2-Dimensional Hole Gases Simmons MY, Ritchie DA, Zailer I, Churchill AC, Jones GA
1300 - 1302	AlGaAs/Ge/GaAs Heterostructures Grown by Molecular-Beam Epitaxy Wang Y, Baruch N, Wang WI, Cheney ME, Huang CI, Scherer RL
1303 - 1305	Observation of Quantum-Mechanical Reflections of Electrons at an in-Situ Grown GaAs/Aluminum Schottky-Barrier Weckwerth MV, Vanderwagt JP, Harris JS
1306 - 1308	Modulation-Doped InAlAs/InGaAs Quantum-Well Structures for High-Electron-Mobility Transistors Klein W, Bohm G, Sexl M, Grigull S, Heiss H, Trankle G, Weimann G
1309 - 1311	Double-Quantum-Well Charge-Transport in Pseudomorphic Al0.3Ga0.7As/In0.15Ga0.85As/GaAs Modulation-Doped Heterostructures Young AP, Fernandez JM, Chen JH, Wieder HH