Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.16, No.2 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (94 articles)

483 - 489	Investigation of particle formation during the plasma enhanced chemical vapor deposition of amorphous silicon, oxide, and nitride films Rao NP, Wu Z, Nijhawan S, Ziemann P, Campbell S, Kittelson DB, McMurry P
490 - 495	Effects of gas distribution on polysilicon etch rate uniformity for a low pressure, high density plasma Khater MH, Overzet LJ, Cherrington BE
496 - 499	Oxide loss at the gate periphery during high density plasma etching Kraft R, Gupta I, Kinoshita T
500 - 506	Selective SiO2/Si3N4 etching in magnetized inductively coupled C4F8 plasma Lee HJ, Kim JK, Kim JH, Whang KW, Kim JH, Joo JH
507 - 510	Si3N4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure Diatezua DM, Wang Z, Park D, Chen Z, Rockett A, Morkoc H
511 - 514	High-density inductively coupled plasma etching of GaAs/AlGaAs in BCl3/Cl-2/Ar : A study using a mixture design experiment Agarwala S, Horst SC, King O, Wilson R, Stone D, Dagenais M, Chen YJ
515 - 518	Dry etching of InP using a CH3Cl/Ar/H-2 gas mixture with electron-cyclotron-resonance excitation Nozawa H, Shibata T, Tamamura T
519 - 522	Visualization of plasma uniformity in dry etching using the imaging plate Arita K, Etoh M, Asano T
523 - 531	Radial uniformity of an external-coil ionized physical vapor deposition source Dickson M, Zhong G, Hopwood J
532 - 535	Antenna sputtering in an internal inductively coupled plasma for ionized physical vapor deposition Foster JE, Wang W, Wendt AE, Booske J
536 - 539	Etching of 3C-SiC using CHF3/O-2 and CHF3/O-2/He plasmas at 1.75 Torr Fleischman AJ, Zorman CA, Mehregany M
540 - 543	Maskless sub-mu m patterning of silicon carbide using a focused ion beam in combination with wet chemical etching Menzel R, Bachmann T, Wesch W, Hobert H
544 - 552	Lithography with a mask of block copolymer microstructures Harrison C, Park M, Chaikin PM, Register RA, Adamson DH
553 - 557	Study of the influence of gas chemistry on notching in metal etching Tabara S, Kitayama Y, Hatakeyama T, Katsuragi K, Tanabe M
558 - 560	Selective etching of AlGaAs/GaAs structures using the solutions of citric acid H2O2 and de-ionized H2O buffered oxide etch Kim JH, Lim DH, Yang GM
561 - 564	Bromine/methanol wet chemical etching of via holes for InP microwave devices Trassaert S, Boudart B, Piotrowicz S, Crosnier Y
565 - 569	Features of InGaAlAs/InP heterostructures Ramam A, Chua SJ
570 - 574	Investigation of GaAs/AlGaAs multiple quantum well waveguides involving unconfined energy states Chen YH, Chan CH, Jan GJ
575 - 577	Photoluminescence study on twenty GaAs/Al0.3Ga0.7As tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy Tomita N, Takekawa K, Ohta K, Shimomura S, Hiyamizu S, Fujita K, Egami N, Okamoto Y
578 - 581	Temperature independent lifetime in InAlAs quantum dots Arlett J, Yang F, Hinzer K, Fafard S, Feng Y, Charbonneau S, Leon R
582 - 588	Fabrication and photoluminescence investigation of silicon nanowires on silicon-on-insulator material Gotza M, Dutoit M, Ilegems M
589 - 598	Electrical properties of ion beam sputtered and ion assisted SiO2, SiOxNy, and SiNx films on silicon Lambrinos MF, Valizadeh R, Colligon JS
599 - 604	Epitaxy of Si/Si1-xGex heterostructures with very small roughness using a production-compatible ultrahigh vacuum chemical vapor deposition reactor Lafontaine H, Mason BF, Rolfe SJ, Perovic DD, Bahierathan B
605 - 608	Fourier transform infrared spectroscopy of corona-processed silicon dioxide films Landheer D, Sayedi SM, Landsberger LM, Kahrizi M
609 - 612	Optical reflectance thermometry for rapid thermal processing Guidotti D
613 - 618	Comparative study of back surface field contact formation using different lamp configurations in rapid thermal processing Singh R, Vedagarbha V, Nimmagadda SV, Narayanan S
619 - 627	Roughness of thermal oxide layers grown on ion implanted silicon wafers Iacona F, Raineri V, La Via F, Rimini E
628 - 632	Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal-oxide-semiconductor field effect transistors Kwan WS, Deen MJ
633 - 644	Influence of data analysis and other factors on the short-term stability of vertical scanning-probe microscope calibration measurements Edwards H, Jorgensen JF, Dagata J, Strausser Y, Schneir J
645 - 650	Scanning tunneling microscopy study of reconstruction of 0.8 monolayers Ga on an Si (001) surface Nakada Y, Okumura H
651 - 653	Gated Si field emitter array prepared by using anodization Higa K, Nishii K, Asano T
654 - 664	Experimental and theoretical characterization of integrated field emission nanotips Garcia N, Marques MI, Asenjo A, Correia A
665 - 669	Fabrication of a silicon-vacuum field-emission microdiode with a moving anode Bruschi P, Diligenti A, Iani F, Nannini A, Piotto M
670 - 673	Enhanced degradation of gate oxide in negative-gas plasma during reactive ion etching Arita K, Takihara H, Asano T
677 - 677	Papers from the Tenth International Vacuum Microelectronics Conference - Preface Lee JD, Jeon DR
678 - 680	Preparation of ultrasharp diamond tip emitters by ion-beam etching Stepanova AN, Givargizov EI, Bormatova LV, Zhirnov VV, Mashkova ES, Molchanov AV
681 - 683	Fabrication of thin-film cold cathodes by a modified chemical vapor deposition diamond process Weiss BL, Badzian A, Pilione L, Badzian T, Drawl W
684 - 688	Effect of sp(2) content and tip treatment an the field emission of micropatterned pyramidal diamond tips Kang WP, Wisitsora-at A, Davidson JL, Kerns DV, Li Q, Xu JF, Kim CK
689 - 692	Field emission energy distribution analysis of wide-band-gap field emitters Schlesser R, McCarson BL, McClure MT, Sitar Z
693 - 696	Modifying chemical vapor deposited diamond films for field emission displays Habermann T, Gohl A, Nau D, Wedel M, Muller G, Christ M, Schreck M, Stritzker B
697 - 699	Study of field electron emission phenomenon associated with N-doped amorphous diamond thin films Chen J, Wei AX, Deng SZ, Lu Y, Zheng XG, Chen DH, Mo D, Peng SQ, Xu NS
700 - 704	Fabrication and simulation of a gated thin film emitter Ko TY, Chung B, Lee JY, Jeon D
705 - 709	Effect of N doping on the electron emission properties of diamondlike carbon film on a 2-in. Mo field emitter array panel Jung JH, Ju BK, Kim H, Oh MH, Chung SJ, Jang J
710 - 711	Influence of silicon tip arrays on effective work function of diamond Yuan G, Jin CC, Zhang BL, Jiang H, Zhou TM, Ning YQ, Wang YZ, Wang WB, Jin YX, Ji H, Gu CZ
712 - 715	Field emission properties of the polycrystalline diamond film prepared by microwave-assisted plasma chemical vapor deposition Kwon SJ, Shin YH, Aslam DM, Lee JD
716 - 719	Electron energy distribution of diamond-coated field emitters Choi WB, Schlesser R, Wojak G, Cuomo JJ, Sitar Z, Hren JJ
720 - 723	Electron emission characteristics of polycrystalline diamond films Sugino T, Kawasaki S, Yokota Y, Iwasaki Y, Shirafuji J
724 - 728	Field emission characteristics of defective diamond films Park KH, Lee S, Song KH, Park JI, Park KJ, Han SY, Na SJ, Lee NY, Koh KH
729 - 731	Field electron emission of diamondlike carbon films deposited by a laser ablation method Hong YK, Kim JJ, Park C, Kim JS, Kim JK
732 - 735	Micropattern-gated diamond field emitter array Kang WP, Wisitsora-at A, Davidson JL, Howell M, Kerns DV, Li Q, Xu JF, Kim CK
736 - 740	Parameters for improving reliability of full color field emission display devices Kim JM, Hong JP, Choi JH, Ryu YS, Hong SS
741 - 744	Vacuum analysis inside a field emission display panel : Experimental and Monte Carlo simulation results Zoulkarneev A, Park NS, Jung JE, Kim JW, Hong JP, Kim JM
745 - 748	High field breakdown characteristics of micrometric gaps in vacuum Ma XY, Sudarshan TS
749 - 753	Field emitter array development for high frequency applications Jensen KL, Abrams RH, Parker RK
754 - 757	Propagation characteristics of a premodulated electron beam Jin JG, Park GS
758 - 761	Field emitter array development for microwave applications. II Spindt CA, Holland CE, Schwoebel PR, Brodie I
762 - 764	Nanometer-scale gap control for low voltage and high current operation of field emission array Lee HI, Park SS, Park DI, Hahm SH, Lee JH, Lee JH
765 - 769	Fabrication of self-aligned silicon field emission devices and effects of surface passivation on emission current Rakhshandehroo MR, Pang SW
770 - 772	Self-aligned Si gate field emitter arrays using the transfer mold technique Sakai T, Ono T, Nakamoto M, Sakuma N
773 - 776	Polycrystalline silicon field emitter arrays by silicidation-sharpening technique at low temperature Lee JH, Song YH, Kang SY, Cho KI, Lee SY, Yoo HJ
777 - 779	Fabrication and characterization of gated porous silicon cathode field emission arrays Jessing JR, Kim HR, Parker DL, Weichold MH
780 - 782	Effect of laser irradiation on electron emission from Si field emitter arrays Takai M, Suzuki N, Morimoto H, Hosono A, Kawabuchi S
783 - 786	Effects of thermal annealing on emission characteristics and emitter surface properties of a Spindt-type field emission cathode Ito F, Konuma K, Okamoto A, Yano A
787 - 789	Fabrication and emission characteristics of GaAs tip and wedge-shaped field emitter arrays by wet etching Ducroquet F, Kropfeld P, Yaradou O, Vanoverschelde A
790 - 792	Electron emission from gated silicide field emitter arrays Takai M, Iriguchi T, Morimoto H, Hosono A, Kawabuchi S
793 - 795	Efficient surface-emitting cold cathodes based on electroluminescent porous silicon diodes Sheng X, Koyama H, Koshida N
796 - 798	Microfabrication and characterization of gridded polycrystalline silicon field emitter devices Huq SE, Huang M, Wilshaw PR, Prewett PD
799 - 802	Effect of gas ambient on improvement in emission behavior of Si field emitter arrays Takai M, Morimoto H, Hosono A, Kawabuchi S
803 - 806	Resonant Fowler-Nordheim tunneling emission from metal-oxide-semiconductor cathodes Mimura H, Abe Y, Ikeda J, Tahara K, Neo Y, Shimawaki H, Yokoo K
807 - 810	Fabrication of metal field emitter arrays for low voltage and high current operation Oh CW, Lee CG, Park BG, Lee JD, Lee JH
811 - 814	Fabrication and characterization of silicon field emitter arrays with focusing electrode by the chemical mechanical polishing process Lee JH, Song YH, Kang SY, Kim SG, Cho KI, Yoo HJ
815 - 817	Analysis of electron emission degradation in silicon field emitter arrays Song YH, Lee JH, Kang SY, Lee YI, Cho KI, Yoo HJ
818 - 821	Tunneling emission from valence band of Si-metal-oxide-semiconductor electron tunneling cathode Ikeda J, Yamada A, Okamoto K, Abe Y, Tahara K, Mimura H, Yokoo K
822 - 825	GaN field emitter array diode with integrated anode Underwood RD, Keller S, Mishra UK, Kapolnek D, Keller BP, DenBaars SP
826 - 828	Characterization of two by two electron-beam microcolumn array aligned with field emission array Park JY, Lera JD, Choi HJ, Buh GH, Kang CJ, Jung JH, Choi SS, Jeon D, Kuk Y
829 - 832	Emission characteristics of ZrN thin film field emitter array fabricated by ion beam assisted deposition technique Nagao M, Fujimori Y, Gotoh Y, Tsuji H, Ishikawa J
833 - 835	Fabrication of GaN field emitter arrays by selective area growth technique Kozawa T, Suzuki M, Taga Y, Gotoh Y, Ishikawa J
836 - 840	Atomic investigation of individual apexes of diamond emitters by a scanning atom probe Nishikawa O, Sekine T, Ohtani Y, Maeda K, Numada Y, Watanabe M
841 - 850	Emission observation of a microtip cathode array with an electrostatic-lens projector : Statistical approach Constancias C, Baptist R
851 - 854	Metal-insulator-semiconductor emitter with an epitaxial CaF2 layer as the insulator Miyamoto Y, Yamaguchi A, Oshima K, Saitoh W, Asada M
855 - 857	Investigation of Ce-doped silicates for low voltage field emission displays Lee RY, Zhang FL, Penczek J, Wagner BK, Yocom PN, Summers CJ
858 - 861	Compositional dependence of luminescence of lithium zinc gallate phosphor Suh KS, Jang SJ, Cho KI, Nahm S, Byun JD
862 - 865	Nanostructured integrated electron source Schoessler C, Koops HWP
866 - 870	Surface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission performance Uh HS, Park BG, Lee JD
871 - 874	Emission characteristics of TiN-coated silicon field emitter arrays Kang SY, Lee JH, Song YH, Kim YT, Cho KI, Yoo HJ
875 - 879	Reduction of work function on a W(100) field emitter due to co-adsorption of Si and Ti Adachi H, Ashihara K, Saito Y, Nakane H
880 - 887	Arcing and voltage breakdown in vacuum microelectronics microwave devices using field emitter arrays : Causes, possible solutions, and recent progress Charbonnier F
888 - 894	Transient and stationary field emission currents from semiconductors computed by a simple semi-classical method Filip V, Nicolaescu D, Plavitu CN, Okuyama F
895 - 899	Emission stability analysis of cone-shaped metal-insulator-semiconductor cathode by Monte Carlo simulation Ishikawa J, Gotoh Y, Sadakane S, Inoue K, Nagao M, Tsuji H
900 - 905	Model calculations of internal field emission and J-V characteristics of a composite n-Si and N-diamond cold cathode source Lerner P, Miskovsky NM, Cutler PH
906 - 909	Calculation of bulk states contributions to field emission from GaN Chung MS, Yoon BG, Park JM, Cutler PH, Miskovsky NM
910 - 915	Deviations from the Fowler-Nordheim theory and peculiarities of field electron emission from small-scale objects Fursey GN, Glazanov DV
916 - 919	Characteristics and circuit model of a field emission triode Nam JH, Uh HS, Lee JD, Ihm JD, Kim YH, Choi KM
920 - 922	Effective three-dimensional simulation of field emitter array and its optimal design methodology using an evolution strategy Jung JH, Lee B, Lee JD