Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.22, No.2 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (70 articles)

L5 - L9	Degradation of superhard nanocomposites by built-in impurities Veprek S, Mannling HD, Niederhofer A, Ma D, Mukherjee S
479 - 482	Removal of dry etch damage in p-type GaN by wet etching of sacrificial oxide layer Lee JM, Lee KS, Park SJ
483 - 488	Global warming gas emission during plasma cleaning process of silicon nitride using c-C4F8O/O-2 chemistry with additive Ar and N-2 Kim KJ, Oh CH, Lee NE, Kim JH, Bae JW, Yeom GY, Yoon SS
489 - 491	Recovery of dry-etch-induced surface damage on Mg-doped GaN by NH3 ambient thermal annealing Moon YT, Kim DJ, Park JS, Oh JT, Lee JM, Park SJ
492 - 500	Fabrication of curved structures with electron-beam and surface structure characterization Chen JK, Ko FH, Chen HK, Chou CT, Chen HL, Chang FC
501 - 505	Progress toward a raster multibeam lithography tool Coyle ST, Shamoun B, Yu M, Maldonado J, Thomas T, Holmgren D, Chen X, Scheinfein MR, DeVore B, Gesley M
506 - 509	Microfabricated cantilever with metallic tip for electrostatic and capacitance microscopy and its application to investigation of semiconductor devices Gotszalk T, Czarnecki P, Grabiec P, Domanski K, Zaborowski M, Rangelow IW
510 - 512	Smooth and vertical-sidewall InP etching using Cl-2/N-2 inductively coupled plasma Lin J, Leven A, Weimann NG, Yang Y, Kopf RF, Reyes R, Chen YK, Chao FS
513 - 518	Transformer coupled plasma etching of 3C-SiC films using fluorinated chemistry for microelectromechanical systems applications Gao D, Wijesundara MBJ, Carraro C, Howe RT, Maboudian R
519 - 522	Etching of submicron holes inSiO(2), Ta2O5, and Nb2O5 Boucher R, Morgenroth W, Roth H, Meyer HG, Liguda C, Eich M
523 - 527	Utilizing maximum likelihood deblurring algorithm to recover high frequency components of scanning electron microscopy images Williamson M, Neureuther A
528 - 532	Effect of the cyclic delivery of (hexafluoroacetylacetonate)Cu-(I) X(3,3-dimethyl-1-butene) pulse and Ar purge gas on the low temperature copper metalorganic chemical vapor deposition Kim K, Tak Y, Yong KJ
533 - 538	Effects of fluorocarbon gas species on electrical conductivity and chemical structure of deposited polymer in SiO2 etching processes Shimmura T, Soda S, Samukawa S, Koyanagi M, Hane K
539 - 542	Advantages of energetic cluster evaporation for organic light emitting devices Jeong DS, Hwang DK, Im S
543 - 547	Silicon-oxide etching process employing an electron-beam-excited plasma Ito M, Takeda K, Shiina T, Okamura Y, Nagai H, Hori M, Goto T
548 - 553	Investigation of ash damage to ultralow-k inorganic materials Yonekura K, Sakamori S, Goto K, Matsuura M, Fujiwara N, Yoneda M
554 - 559	Atomic layer diffusion and electronic structure at In0.53Ga0.47As/InP interfaces Smith PE, Goss SH, Bradley ST, Hudait MK, Lin Y, Ringel SA, Brillson LJ
560 - 564	High quality ion-induced secondary electron imaging for MeV nuclear microprobe applications Teo EJ, Breese MBH, Bettiol AA, Watt F, Alves LC
565 - 569	Post-growth process relaxation properties of strained Cd0.92Zn0.08Te/Cd0.83Zn0.17Te quantum well heterostructures grown by molecular beam epitaxy Jacob AP, Myrberg T, Nur O, Willander M, Kyutt RN
570 - 573	Magnetic field and temperature dependence of an atomic force microscope-defined quantum point contact Mori G, Lazzarino M, Ercolani D, Biasiol G, Sorba L
574 - 578	Influence of polymer phase separation on roughness of resist features Yasin S, Hasko DG, Khalid MN, Weaver DJ, Ahmed H
579 - 582	InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor with high breakdown, low offset, and knee voltage Lew KL, Zhang R, Yoon SF
583 - 587	Band-gap expansion, core-level shift, and dielectric suppression of porous silicon passivated by plasma fluorination Pan LK, Ee YK, Sun CQ, Yu GQ, Zhang QY, Tay BK
588 - 591	Application of a segmentation algorithm to quantum dots study Belardinelli P, Capoleoni S, Tirozzi B, Coluzza C
592 - 596	Activation improvement of ion implanted boron in silicon through fluorine co-implantation Shauly EN, Lachman-Shalem S
597 - 601	Formation processes of fine structures induced by high electric fields Dou JY, Shang WJ, Chen ZW
602 - 606	Influence of residual solvent in polymers patterned by nanoimprint lithography Gourgon C, Tortai JH, Lazzarino F, Perret C, Micouin G, Joubert O, Landis S
607 - 610	Reduction of stacking faults in the ZnSe/GaAs heterostructure with a low-temperature-grown ZnSe buffer layer Song JS, Oh DC, Makino H, Hanada T, Cho MW, Yao T, Park YG, Shindo D, Chang JH
611 - 618	An inlaid electroplated copper coil for on-chip powering of microelectromechanical systems devices Wu J, Bernstein GH
619 - 623	Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, La Roche JR, Ren F, Pearton SJ
624 - 629	Effect of dislocations on luminescence properties of silicon-doped GaN grown by metalorganic chemical vapor deposition method Alam J, Bathe R, Vispute RD, Zavada JM, Litton CW, Iliadis AA, Mohammad SN
630 - 635	Ultrahigh resolution secondary ion mass spectrometry profiling with oblique O-2(+) beams below 200 eV Jiang ZX, Lerma J, Sieloff D, Lee JJ, Backer S, Bagchi S, Conner J
636 - 641	Enhanced model for scanning tunneling microscope tip geometry measured with field ion microscopy Rao PVM, Jensen CR, Silver RM
642 - 646	Critical cluster size of InAs quantum dots formed by Stranski-Krastanow mode Shiramine KI, Itoh T, Muto S
647 - 653	Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes Goldfarb DL, Mahorowala AP, Gallatin GM, Petrillo KE, Temple K, Angelopoulos M, Rasgon S, Sawin HH, Allen SD, Lawson MC, Kwong RW
654 - 662	Compositional shift in AlxGa1-xN beneath annealed metal contacts Hull BA, Mohney SE, Chowdhury U, Dupuis RD
663 - 667	Two-step surface treatment technique: Realization of nonalloyed low-resistance Ti/Al/Ti/Au ohmic contact to n-GaN Motayed A, Jah M, Sharma A, Anderson WT, Litton CW, Mohammad SN
668 - 672	Use of the focused ion beam technique to produce a sharp spherical diamond indenter for sub-10 nm nanoindentation measurements Yu N, Polycarpou AA
673 - 677	Fabrication of hyperboloid-drum structure for electrically pumped laser of sub-micrometer to nanometer diameter active areas Kim JY, An SJ, Kim J, Lee JW, Kang BK, Kwon OD
678 - 681	Size-dependent resonant tunneling and storing of electrons in a nanocrystalline silicon floating-gate double-barrier structure Wu LC, Dai M, Huang XF, Li W, Chen KJ
682 - 687	Facet evolution in selective epitaxial growth of Si by cold-wall ultrahigh vacuum chemical vapor deposition Lim SH, Song S, Lee GD, Yoon EJ, Lee JH
688 - 694	Materials growth for InAs high electron mobility transistors and circuits Bennett BR, Tinkham BP, Boos JB, Lange MD, Tsai R
695 - 701	Image placement issues for ITO-based step and flash imprint lithography templates Nordquist KJ, Ainley ES, Mancini DP, Dauksher WJ, Gehoski KA, Baker J, Resnick DJ, Masnyj Z, Mangat PJS
702 - 706	Two-dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum wells Capotondi F, Biasiol G, Vobornik I, Sorba L, Giazotto F, Cavallini A, Fraboni B
707 - 709	Fabrication of two-dimensional InP-based photonic crystals by chlorine based chemically assisted ion beam etching Mulot M, Anand S, Ferrini R, Wild B, Houdre R, Moosburger J, Forchel A
710 - 714	Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates Kang BS, Ren F, Irokawa Y, Baik KW, Pearton SJ, Pan CC, Chen GT, Chyi JI, Ko HJ, Lee HY
715 - 720	Approach curve method for large anode-cathode distances Mammana VP, Monteiro OR, Fonseca LRC
721 - 728	Texture and electromigration performance in damascene interconnects formed by reflow sputtered Cu film Abe K, Harada Y, Yoshimaru M, Onoda H
729 - 735	Investigation of nanocrystal-(Ti,AI)N(1-x)amorphous-SiNy composite films Yau BS, Huang JL, Kan MC, Lii DF
736 - 741	Temperature characteristics due to stress-induced migration Aoyagi M
742 - 746	Electron induced nanodeposition of tungsten using field emission scanning and transmission electron microscopes Shimojo M, Mitsuishi K, Tameike A, Furuya K
747 - 757	Acid-base reactions in a positive tone chemically amplified photoresist and their effect on imaging Houle FA, Hinsberg WD, Sanchez MI
758 - 761	Enhanced hole injection in organic electroluminescent device with an additional oxygen-rich indium-tin-oxide sublayer Choi MW, Cho K, Sung C, Yang J, Noh YYM, Choi JC, Jeong K
762 - 765	Semiconducting and ferromagnetic properties of Ti1-xCoxO2 thin films grown by liquid-delivery metalorganic chemical vapor deposition Seong NJ, Yoon SG
766 - 770	Three-dimensional micro- and nanostructuring by combination of nanoimprint and x-ray lithography Tormen M, Romanato F, Altissimo M, Businaro L, Candeloro P, Di Fabrizio EM
771 - 775	Effects of hydrogen plasma treatment on electrical properties of p-AlGaN Polyakov AY, Smirnov NB, Govorkov AV, Baik KH, Pearton SJ, Luo B, Ren F, Zavada JM
776 - 780	Fabrication of nanoelectrodes based on controlled placement of carbon nanotubes using alternating-current electric field Chen Z, Hu WC, Guo J, Saito K
781 - 784	Extreme ultraviolet lithography based nanofabrication using a bilevel photoresist Talin AA, Cardinale GF, Wallow TI, Dentinger P, Pathak S, Chinn D, Folk DR
785 - 790	High conversion efficiency mass-limited Sn-based laser plasma source for extreme ultraviolet lithography Richardson M, Koay CS, Takenoshita K, Keyser C, Al-Rabban M
791 - 800	Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal-oxide-semiconductors Stemmer S
801 - 808	Improvement of Rayleigh criterion with duty ratio characterization for subwavelength lithography Chua GS, Tay CJ, Quan CG, Lin QY
809 - 817	Gettering by Ba films in color cathode ray tubes den Engelsen D, Ferrario B
818 - 825	Chemical-mechanical photoresist drying in supercritical carbon dioxide with hydrocarbon surfactants Zhang XG, Pham JQ, Ryza N, Green PF, Johnston KP
826 - 831	Ion bombardment energy control for selective fluorocarbon plasma etching of organosilicate glass Silapunt R, Wendt AE, Kirmse K, Losey LP
832 - 837	Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors Chuang HM, Cheng SY, Chen CY, Liao XD, Lai PH, Kao CI, Liu WC
838 - 842	Study of direct current characteristics of carbon-doped GaInP/GaAs heterojunction bipolar transistor grown by solid source molecular beam epitaxy Zhang R, Lew KL, Yoon SF, Tan KH, Sun ZZ
843 - 851	Mechanism of etching and surface relief development of PMMA under low-energy ion bombardment Koval Y
852 - 858	Stability and composition of Ni-germanosilicided Si1-xGex films Pey KL, Chattopadhyay S, Miron Y, Fitzgerald EA, Antoniadis DA, Osipowicz T
859 - 860	Fabrication of very fine copper lines on silicon substrates patterned with poly(methylmethacrylate) via selective chemical vapor deposition Davazoglou D, Raptis I, Gleizes A, Vasilopoulou M
861 - 861	Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge-coupled 44 image-sensor processes (vol 21, pg 2448, 2003) Okigawa M, Ishikawa Y, Samukawa S