Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.24, No.2 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (107 articles)

523 - 533	Electrical conductivity of high aspect ratio trenches in chemical-vapor deposition W technology Ivanov IP, Sen I, Keswick P
534 - 538	Formation of body-centered-cubic tantalum via sputtering on low-kappa dielectrics at low temperatures Senkevich JJ, Karabacak T, Bae DL, Cale TS
539 - 542	Nanofabrication module integrated with optical aligner Stuart C, Xu QF, Tseng RJ, Yang Y, Hahn HT, Chen Y, Wu W, Williams RS
543 - 546	Hot-wire chemical-vapor-deposited nanometer range a-SiC : H diffusion barrier films for ultralarge-scale-integrated application Singh SK, Kumbhar AA, Dusane RO, Bock W
547 - 553	Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy O-2(+) secondary-ion-mass spectrometry Chanbasha AR, Wee ATS
554 - 561	High-resolution three-dimensional reconstruction: A combined scanning electron microscope and focused ion-beam approach Bansal RK, Kubis A, Hull R, Fitz-Gerald JM
562 - 569	Microelectronically fabricated LiCoO2/SiO2/polycrystalline-silicon power cells planarized by chemical mechanical polishing Ariel N, Isaacson DM, Fitzgerald EA
570 - 574	Impact of supercritical CO2 drying on roughness of hydrogen silsesquioxane e-beam resist Kupper D, Kupper D, Wahlbrink T, Henschel W, Bolten J, Lemme MC, Georgiev YM, Kurz H
575 - 581	ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors Dora Y, Han S, Klenov D, Hansen PJ, No KS, Mishra UK, Stemmer S, Speck JS
582 - 586	Pattern formation by erosion sputtering on GaSb: Transition from dot to ripple formation and influence of impurities Allmers T, Donath M, Rangelov G
587 - 591	Real-time reflectometry-controlled focused-electron-beam-induced deposition of transparent materials Perentes A, Bret T, Utke I, Hoffmann P, Vaupel M
592 - 598	Self-organized Cu nanowires on glass and Si substrates from sputter etching Cu/substrate interfaces Stepanova M, Dew SK
599 - 603	Use of SiO2 nanoparticles as etch mask to generate Si nanorods by reactive ion etch Liang EZ, Huang CJ, Lin CF
604 - 607	Three primary color luminescence from natively and thermally oxidized nanocrystalline silicon Sato K, Hirakuri K
608 - 612	Dopant diffusion modeling for heteroepitaxial SiGe/Si devices Chakravarthi S, Chidambaram PR, Machala CF, Mansoori M
613 - 617	Mechanism of solid-liquid-solid on the silicon oxide nanowire growth Wang CY, Chan LH, Xiao DQ, Lin TC, Shih HC
618 - 622	Statistical variation analysis of sub-5-nm-sized electron-beam-induced deposits van Dorp WF, vanSomeren B, Hagen CW, Kruit P, Crozier PA
623 - 628	Effects of n-type modulation-doping barriers and a linear graded-composition GaInAsP intermediate layer on the 1.3 mu m AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes Lei PH, Yang CD, Wu MY, Wu MC, Cheng KY, Lin CC, Ho WJ
629 - 633	Modeling of field-assisted emission from the image states of a glass substrate Mayer A, Chung MS, Kumar N, Weiss BL, Miskovsky NM, Cutler PH
634 - 638	Explicit expression on specifications of mask mean to target and mask uniformity Lee SW, Lee DY, Woo SG, Cho HK
639 - 642	Effects of a nanocomposite carbon buffer layer on the field emission properties of multiwall carbon nanotubes and nanofibers grown by hot filament chemical vapor deposition Uppireddi K, Gonzalez-Berrios A, Piazza F, Weiner BR, Morell G
643 - 650	Role of neutral molecule chemistry in electron cyclotron resonance microwave plasmas capable of diamond deposition Blumenthal R, Webb SF
651 - 656	Low temperature, ion-enhanced, implanted photoresist removal Kawaguchi MN, Papanu JS, Pavel EG
657 - 663	Surface characterization of ion-enhanced implanted photoresist removal Kawaguchi MN, Papanu JS, Su B, Castle M, Al-Bayati A
664 - 668	Fabrication of sub-transistor via holes for small and efficient power amplifiers using highly selective GaAs/InGaP wet etching Uchiyama H, Ohta H, Shiota T, Takubo C, Tanaka K, Mochizuki K
669 - 674	Improved dc and microwave performance of heterojunction bipolar transistors by full sulfur passivation Cheng SY, Fu SI, Chu KY, Lai PH, Chen LY, Liu WC, Chiang MH
675 - 677	Surface roughness of Ti : LiNbO3 etched by Ar/C3F8 plasma and annealing effect Yang WS, Kim WK, Yoon DH, Lim JW, Isshiki M, Lee HY
678 - 681	Electron beam induced deposition of pure, nanoscale Ge Ketharanathan S, Sharma R, Crozier PA, Drucker J
682 - 685	Effect of annealing temperature on structural and electrical properties of tantalum nitride thin film resistors deposited on SiO2/Si substrates by dc sputtering technique Cuong ND, Phuong NM, Kim DJ, Kang BD, Kim CS, Yoon SG
686 - 689	Nondestructive metrology for nanoimprint processes Deng XG, Chen L, Sciortino PF, Liu F, Wang JJ
690 - 694	Simulation of vertical and lateral ZnO light-emitting diodes Jang S, Chen JJ, Ren F, Yang HS, Han SY, Norton DP, Pearton SJ
695 - 699	Growth of gallium nitride nanorods by metalorganic molecular beam epitaxy Kuo SY, Kei CC, Hsiao CN, Chao CK
700 - 704	First principles calculations of dopant solubility based on strain compensation and direct binding between dopants and group IV impurities Ahn C, Diebel M, Dunham ST
705 - 709	Process integration and development of inverted photonic crystal arrays Tinker M, Schonbrun E, Lee JB, Park W
710 - 714	Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics Gottlob HDB, Mollenhauer T, Wahlbrink T, Schmidt M, Echtermeyer T, Efavi JK, Lemme MC, Kurz H
715 - 720	Raman study of multiwalled carbon nanotubes functionalized with oxygen groups Murphy H, Papakonstantinou P, Okpalugo TIT
721 - 724	Characterization of silver-saturated Ge-Te chalcogenide thin films for nonvolatile random access memory Kim CJ, Yoon SG, Choi KJ, Ryu SO, Yoon SM, Lee NY, Yu BG
725 - 729	Quantitative characterization of the surface morphology using a height difference correlation function Vanormelingen K, Degroote B, Vantomme A
730 - 738	Study of two-dimensional B doping profile in Si fin field-effect transistor structures by high angle annular dark field in scanning transmission electron microscopy mode Garcia-Gutierrez DI, Jose-Yacaman M, Khajetoorians AA, Shih CK, Wang XD, Pham D, Celio H, Diebold A
739 - 743	Nanostructures on oxidized Si surfaces fabricated with the scanning tunneling microscope tip under electron-beam irradiation Shklyaev AA, Ichikawa M
744 - 749	Comparison of electrical and reliability performances of TiB2-, CrB2-, and W2B5-based Ohmic contacts on n-GaN Khanna R, Pearton SJ, Ren F, Kravchenko II
750 - 755	Gas phase chemomechanical modification of silicon Lee MV, Richards JL, Linford MR, Casey SM
756 - 761	Reactive ion etching induced damage evaluation for optoelectronic device fabrication Morello G, Quaglio M, Meneghini G, Papuzza C, Kompocholis C
762 - 767	High-accuracy determination of epitaxial AlGaAs composition with inductively coupled plasma optical emission spectroscopy Bertness KA, Wang CM, Salit ML, Turk GC, Butler TA, Paul AJ, Robins LH
768 - 779	Simulation of the spatial distribution and molecular weight of polymethylmethacrylate fragments in electron beam lithography exposures Aktary M, Stepanova M, Dew SK
780 - 789	Real-time observation and optimization of tungsten atomic layer deposition process cycle Lei W, Henn-Lecordier L, Anderle M, Rubloff GW, Barozzi M, Bersani M
790 - 794	Microcathodoluminescence and electrical properties of GaN epitaxial layers grown on thick freestanding GaN substrates Govorkov AV, Smirnov NB, Polyakov AY, Markov AV, Voss L, Pearton SJ
795 - 799	Chemical shrinkage material: Nanoscale patterning through interpolymer complex Hata M, Hah JH, Kim HW, Ryoo MH, Choi SJ, Woo SG, Cho HK
800 - 802	Honeycomb GaN micro-light-emitting diodes Choi HW, Chua SJ
803 - 806	Bottom-up fill mechanisms of electroless copper plating with addition of mercapto alkyl carboxylic acid Wang ZL, Liu ZJ, Jiang HY, Wang XW
807 - 812	Polymer to polymer to polymer pattern transfer: Multiple molding for 100 nm scale lithography Mele E, Di Benedetto F, Persano L, Cingolani R, Pisignano D
813 - 817	Assembled microelectromechanical system microcolumns for miniature scanning electron microscopies Saini R, Jandric Z, Gory I, Mentink SAM, Tuggle D
818 - 822	Solvent enhanced resist flow for room temperature imprint lithography Chu C, Parsons GN
823 - 827	Characterization and modeling of antireflective coatings of SiO2, Si3N4, and SiOxNy deposited by electron cyclotron resonance enhanced plasma chemical vapor deposition Mestanza SNM, Obrador MP, Rodriguez E, Biasotto C, Doi I, Diniz JA, Swart JW
828 - 835	Experimental and computational studies of phase shift lithography with binary elastomeric masks Maria J, Malyarchuk V, White J, Rogers JA
836 - 844	Accurate focused ion beam sculpting of silicon using a variable pixel dwell time approach Adams DP, Vasile MJ
845 - 851	Buffer controlled GaN nanorods growth on Si(111) substrates by plasma-assisted molecular beam epitaxy Hsiao CL, Tu LW, Chi TW, Seo HW, Chen QY, Chu WK
852 - 854	X-ray photoelectron spectroscopy depth profile of chemically modified porous silicon Nijdam AJ, Cheng MMC, Ferrari M
855 - 859	Improvement on superhydrophobic behavior of carbon nanofibers via the design of experiment and analysis of variance Lin TS, Wu CF, Hsieh CT
862 - 862	Papers from the 18th International Vacuum Nanoelectronics Conference -Preface Huq SE
863 - 868	Field-enhanced photoemission from metals and coated materials Jensen KL, Feldman DW, Moody NA, O'Shea PG
869 - 873	Properties of a field emitter deduced from curvature of its Fowler-Nordheim plot Edgcombe CJ, de Jonge N
874 - 880	Quantum size dependence of electron distribution on carbon nanotubes and its influence on field emission Filip LD, Nicolaescu D, Silva SRP
881 - 886	Coherent and sequential tunneling mechanisms for field electron emission through layers of wide band gap materials Filip V, Nicolaescu D, Wong H
887 - 891	Temperature dependence of the work function of the Zr/O/W(100) Schottky electron source in typical operating conditions and its effect on beam brightness Bronsgeest MS, Kruit P
892 - 897	Full scale simulation of a field-emitter arrays based electron source for free-electron lasers Dehler M, Candel A, Gjonaj E
898 - 902	Statistical modeling of field-enhancement-factor distribution of nanostructured carbon films Park KH, Lee S, Koh KH
903 - 908	Simulations of emission characteristics of a multigated single carbon nanotube field emitter Hua Y, Lin TC
909 - 912	Theoretical analysis of triple junction field emission for a type of cold cathode Chung MS, Hong SC, Cutler PH, Miskovsky NM, Weiss BL, Mayer A
913 - 917	Analysis of the energy distribution of field electrons from metals and semiconductors Chung MS, Choi TS, Bae HK, Kim JK, Ybon BG, Hong SC
918 - 923	Simulation study of junction effect on field emission from one-dimensional nanostructure grown on silicon substrate Lan YC, Yan MX, Liu WJ, Hu Y, Lin TL
924 - 926	Smith-Purcell radiation from ultraviolet to infrared using a Si field emitter Neo Y, Shimawaki H, Matsumoto T, Mimura H
927 - 931	rf microelectromechanical system device with a lateral field-emission detector Yamashita K, Sun W, Kakushima K, Fujita H, Toshiyoshi H
932 - 935	Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment Yoshida T, Baba A, Asano T
936 - 939	HfC field emitter array controlled by built-in poly-Si thin film transistor Nagao M, Yasumuro C, Sacho Y, Tanoue H, Kanemaru S, Itoh J
940 - 944	Field emission characteristics of CuO nanowires grown on brown-oxide-coated Cu films on Si substrates by conductive heating in air Yeon SC, Sung WY, Kim WJ, Lee SM, Lee HY, Kim YH
945 - 949	Electrical and emission properties of nanocomposite SiOx(Si) andSiO(2)(Si) films Evtukh AA, Litovchenko VG, Semenenko MO
950 - 952	Development of microfocused x-ray source by using carbon nanotube field emitter Kawakita K, Hata K, Sato H, Saito Y
953 - 957	Single-mask multiple lateral nanodiamond field emission devices fabrication technique Subramanian K, Kang WP, Davidson JL, Choi BK, Howell M
958 - 961	Electron field-emission properties of Ag-SiO2 nanocomposite layers Tsang WM, Stolojan V, Giusca C, Poa CHP, Sealy B, Silva SRP, Wong SP
962 - 966	Study of the triode structure in a field emission display element Wei L, Zhang XB, Yang GD, Xie MY
967 - 970	Field emission from H- and O-terminated heavily P-doped homoepitaxial diamond Yamada T, Kato H, Shikata S, Nebel CE, Yamaguchi H, Kudo Y, Okano K
971 - 973	Electron emission from planar-type cathodes based on nanocrystalline silicon thin films Shimawaki H, Neo Y, Mimura H
974 - 978	Nanoseconds field emitted current pulses from ZrC needles and field emitter arrays Ganter R, Bakker RJ, Betemps R, Dehler M, Gerber T, Gobrecht J, Gough C, Johnson M, Kirk E, Knopp G, Le-Pimpec F, Li K, Paraliev M, Pedrozzi M, Rivkin L, Sehr H, Schulz L, Wrulich A
979 - 982	Improvement of emission characteristics uniformity of carbon nanotube field emission display by surface treatment Shiroishi T, Hosono A, Sono A, Nishimura K, Suzuki Y, Nakata S, Okuda S
983 - 987	Quantum effect in the field emission of carbon nanotubes Liang SD, Huang NY, Deng SZ, Xu NS
988 - 992	1 A/cm(2) current density from microgated carbon nanotube field-emitter arrays grown by dc plasma chemical-vapor deposition Hsu DSY, Shaw JL
993 - 996	Total energy distribution of field emission electrons from a film of carbon nanopearls Mouton R, Semet V, Guillot D, Binh VT
997 - 1003	Vertically aligned carbon nanotube arrays for giant field emission displays Mauger M, Binh VT
L11 - L15	High density plasma chemical vapor deposition gap-fill mechanisms Mungekar HP, Lee YS
L16 - L18	Mo/Al/Mo/Au Ohmic contact scheme for AlxGa1-xN/GaN high electron mobility transistors annealed at 500 degrees C Basu A, Mohammed FM, Guo S, Peres B, Adesida I
L19 - L22	Innovative approach for replicating micropatterns in a conducting polymer Luo C, Poddar R, Liu XC
1004 - 1007	Growth characteristics of carbon nanotubes on nanotip-formed substrate Sato H, Matsubayashi M, Sakai T, Hata K, Miyake H, Hirarnatsu K, Oshita A, Saito Y
1008 - 1012	Carbon nanostructure field emission devices Wong YM, Kang WP, Davidson JL, Soh KL, Choi BK, Hofmeister W
1013 - 1016	Surface treatment of carbon nanotube cathodes with glass fillers using KrF excimer laser for field-emission displays Honda T, Oh CB, Murakami K, Kim WS, Abo S, Wakaya F, Takai M
1017 - 1020	Synthesis and emission properties of carbon nanotubes grown by sandwich catalyst stacks Chen ZX, Cao GC, Lin ZL, den Engelsen D
1021 - 1025	Fabrication of active-matrix high-efficiency electron emission device and its application to high-sensitivity image sensing Negishi N, Tanaka R, Nakada T, Sakemura K, Okuda Y, Satoh H, Watanabe A, Yoshikawa T, Ogasawara K, Nanba M, Okazaki S, Tanioka K, Egami N, Koshida N
1026 - 1029	All-inverter complementary metal oxide semiconductor based dose control circuit for using vertically aligned carbon nanofibers in maskless lithography Islam SK, Durisety C, Vijayaraghavan R, Blalock BJ, Grundman T, Baylor LR, Gardner WL
1030 - 1034	Ultracompact electron-beam column Kuo HP, Lam S, Sheng X, Birecki H, Naberhuis S
1035 - 1039	Amorphous selenium based photodetector driven by field emission current from N-doped diamond cold cathode Kato N, Saito L, Yamaguchi H, Okamura H, Okano K, Yamada T, Butler T, Rupesinghe NL, Amaratunga GAJ
1040 - 1044	Microchannel plates at high rates: The challenges for future space plasma missions Kataria DO
1045 - 1051	Parameter dispersion characterization for arrays of HfC-coated emitters on poly-Si substrate Nicolaescu D, Nagao M, Filip V, Tanoue H, Kanemaru S, Itoh J
1052 - 1055	Study on the field-emission characteristics of a-C : H films Lu ZL, Zhang BL, Yao N, Zhang XY
1056 - 1060	Variability in long-duration operation of silicon tip field emission devices Aplin KL, Kent BJ, Wang L, Lockwood HF, Rouse J, Stevens R
1061 - 1066	Influence of nanocrystalline structure on work function of tungsten Mulyukov RR
1067 - 1071	Improved current densities of carbon nanotube cathodes by pulsed operation Lysenkov D, Muller G
1072 - 1075	Investigation of fabrication uniformity and emission reliability of silicon field emitters for use in space Wang L, Aplin KL, Huq SE, Kent BJ, Stevens R, Malik A, Blom HO, Loader IM, Thomas GR