445 - 457 |
Characterization of semiconducting polymers for thin film transistors Chabinyc ML |
458 - 480 |
Nanoimprint lithography: An old story in modern times? A review Schift H |
481 - 486 |
Fabrication process for cantilevers with integrated tunnel junctions Tanner SM, Rogers CT |
487 - 494 |
SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices Voss LF, Ip K, Peartona SJ, Shul RJ, Overberg ME, Baca AG, Sanchez C, Stevens J, Martinez M, Armendariz MG, Wouters GA |
495 - 501 |
Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application Jayaraj MK, Saji KJ, Nomura K, Kamiya T, Hosono H |
502 - 505 |
Improvement on cold carbon field-electron emitter for commercial x-ray tube Lv QN, Wang DA, Li TX, Ju ZM, Liu GY, Xia SH, Ding YG, Li HY |
506 - 513 |
The effect of added salts on the optical properties of water for high index immersion lithography fluids Taylor JC, Costner EA, Goh S, Wojtczak W, Dewulf D, Willson CG |
514 - 517 |
Multilayer soft mold for UV imprinting the 50 nm pitch dot array Lee D, Cho EH, Kim HS, Lee BK, Lee MB, Sohn JS, Lee CH, Suh SJ |
518 - 524 |
Electrical biasing and time dependent evolution of defects in poly(triphenylamine)-butane vinyl organic semiconductor devices Devine RAB, Wang F, Rauh RD |
525 - 533 |
Defects in CdHgTe grown by molecular beam epitaxy on, (211)B-oriented CdZnTe substrates Selvig E, Tonheim CR, Kongshaug KO, Skauli T, Hemmen H, Lorentzen T, Haakenaasen R |
534 - 540 |
Optimization of resolution-enhancement technology and dual-layer bottom-antireflective coatings in hypernumerical aperture lithography Li Y, Zhou Y |
541 - 550 |
Silicon laterally resonant microcantilevers for absolute pressure measurement with integrated actuation and readout Cocuzza M, Ferrante I, Ricci A, Giuri E, Scaltrito L, Bich D, Merialdo A, Schina P, Correale R |
551 - 558 |
Effects of Mo seeding on the formation of Si nanodots during low-energy ion bombardment Ozaydin G, Ludwig KF, Zhou H, Headrick RL |
559 - 565 |
Electrical properties of conductive and resistive ZnSe layers Oh DC, Im IH, Park SH, Hanada T, Yao T, Song JS, Chang JH, Makino H, Han CS, Koo KH |
566 - 575 |
Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon/silicon heterojunctions grown using a pulsed filtered cathodic vacuum arc technique Panwar OS, Rupesinghe N, Amaratunga GAJ |
576 - 581 |
Comparison of deep silicon etching using SF6/C4F8 and SF6/C4F6 plasmas in the Bosch process Rhee H, Kwon H, Kim CK, Kim H, Yoo J, Kim YW |
582 - 584 |
High-aspect-ratio nanopillar structures fabricated by nanoimprinting with elongation phenomenon Kuwabara K, Miyauchi A |
585 - 588 |
Indium-doped ZnO nanospirals synthesized by thermal evaporation Gao H, Ji H, Zhang X, Lu H, Liang Y |
589 - 592 |
Route to production of suspended perforated membranes Burckel DB, Brueck SRJ |
593 - 597 |
Fabrication of suspended dielectric mirror structures via xenon difluoride etching of an amorphous germanium sacrificial layer Cole GD, Behymer E, Goddard LL, Bond TC |
598 - 605 |
Simulation study on stress and deformation of polymeric patterns during the demolding process in thermal imprint lithography Song Z, Choi J, You BH, Lee J, Park S |
606 - 610 |
Patterning chalcogenide glass by direct resist-free thermal nanoimprint Solmaz M, Park H, Madsen CK, Cheng X |
611 - 617 |
Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride Sumner J, Oliver RA, Kappers MJ, Humphreys CJ |
618 - 623 |
Comparative study on temperature-dependent characteristics of InP/InGaAs single- and double-heterojunction bipolar transistors Chen WH, Chen TP, Lee CJ, Hung CW, Chu KY, Chen LY, Tsai TH, Liu WC |
624 - 626 |
Optimization of electrical characteristics of gadolinium (Gd2O3) incorporated HfO2GaAs n-type metal-oxide semiconductor capacitors with silicon-interface-passivation layer Il Park S, Ok I, Kim HS, Zhu F, Zhang M, Yum JH, Han Z, Lee JC |
627 - 631 |
Characteristics of an InGaP/AlXGa1-XAs/GaAs composite-emitter heterojunction bipolar transistor (CEHBT) Cheng SY, Chu KY, Chen LY, Chen LA, Liu WC |
632 - 635 |
Three-dimensional metal patterning over nanostructures by reversal imprint Peng C, Cardozo BL, Pang SW |
636 - 642 |
Effect of growth temperature on InGaSb metamorphic layers and the fabrication of InGaSb p-i-n diodes Mohammedy FM, Hulko O, Robinson BJ, Thompson DA, Deen MJ |
643 - 650 |
Novel method for measuring nanofriction by atomic force microscope Salvadori MC, Lisboa FS, Fernandes FM, Brown IG |
651 - 654 |
Enhanced growth of anodic alumina nanochannels on Ga-ion pre-irradiated aluminum Liu CY, Datta A, Liu NW, Wu YR, Wang HH, Chuang TH, Wang YL |
655 - 660 |
Electron optics of microlenses with inclined beams Zhang Y, Barth JE, Kruit P |
661 - 665 |
Picocalorimetric method for DNA sequencing Esfandyarpour H, Fabian R, Pease W, Davis RW |
666 - 674 |
Sidewall passivation assisted by a silicon coverplate during Cl-2-H-2 and HBr inductively coupled plasma etching of InP for photonic devices Bouchoule S, Patriarche G, Guilet S, Gatilova L, Largeau L, Chabert P |
675 - 677 |
Synthesis of epitaxial silicon nanowires on Si(111) substrates using ultrahigh vacuum magnetron sputtering Zhao XW, Yang FY |
678 - 681 |
Ta nanotubes grown by glancing angle deposition Kesapragada SV, Sotherland PR, Gall D |
682 - 685 |
Deep-UV exposure of poly(methyl methacrylate) at 254 nm using low-pressure mercury vapor lamps Johnstone RW, Foulds IG, Parameswaran M |
686 - 686 |
An international journal devoted to Microelectronics and Nanometer Structures - Processing, measurement, and phenomena - Preface Busta HH |
689 - 693 |
Fabrication and operation of triode electron emitters as ion source for miniature mass spectrometer Bin Cho J, Lee S, Yoon HJ, Yang SS, Koh KH |
694 - 697 |
Injection-locked millimeter wave oscillator based on field-emission cathodes Lin MC, Lu PS |
698 - 701 |
Fabrication of field-emission cathode ray tube with a unique nanostructure carbon electron emitter Wang HX, Jiang N, Hiraki H, Harada Y, Zhang H, Wang J, Haba M, Hiraki A |
702 - 705 |
Development of high spatial resolution x-ray radiography system equipped with multiwalled carbon nanotube field emission cathode Yabushita R, Hata K |
706 - 710 |
Carbon nanotube cold cathodes for application in low current x-ray tubes Tolt ZL, Mckenzie C, Espinosa R, Snyder S, Munson M |
711 - 715 |
Development of a super-high-sensitivity image sensor using 640x480 pixel active-matrix high-efficiency electron emission device Negishi N, Sato T, Matsuba Y, Tanaka R, Nakada T, Sakemura K, Okuda Y, Watanabe A, Yoshikawa T, Ogasawara K, Nanba M, Okazaki S, Tanioka K, Egami N, Koshida N |
716 - 719 |
Characteristics of nanosilicon ballistic cold cathode in aqueous solutions as an active electrode Ohta T, Gelloz B, Koshida N |
720 - 723 |
Evidence of electronic cooling from resonance states of nanocrystalline graphite field emitters Busta H, Tao K, Feinerman A |
724 - 729 |
Field emission at nanometer distances for high-resolution positioning le Febre AJ, Abelmann L, Lodder JC |
730 - 734 |
Combined x-ray photoelectron spectroscopy/ultraviolet photoelectron spectroscopy/field emission spectroscopy for characterization of electron-emission mechanism of diamond Yamaguchi H, Kudo Y, Masuzawa T, Kudo M, Yamada T, Takakuwa Y, Okano K |
735 - 737 |
Scanning atom probe study of graphite nanofibers Nishikawa O, Taniguchi M, Ushirozawa M |
738 - 744 |
Thermal-field treatment for creating single-crystal tungsten tips with ultimate sharpness Fujita S, Shimoyama H |
745 - 750 |
Multi-walled nanotube polymer composite degradation under high emission current regime as revealed by mass spectrometry Popov EO, Pashkevich AA, Pozdnyakov AO, Pozdnyakov OF |
751 - 754 |
Modification of the field enhancement factor for a field emitter with a surrounding electrode stabilized using a field effect transistor Neo Y, Matsumoto T, Shimawaki H, Mimura H, Yokoo K |
755 - 759 |
Polymer embedded C nanopearls field emission cathodes for time of flight mass spectrometers Mouton R, Semet V, Kilgour D, Brookes MD, Binh VT |
760 - 763 |
Relationship between field-emission characteristics and defects measured by Raman scattering in carbon-nanotube cathodes treated by plasma and laser Kim WS, Oki H, Kinoshita A, Murakami K, Abo S, Wakaya F, Takai M |
764 - 769 |
Field emission characteristics of a lanthanum monosulfide cold cathode array fabricated using microelectromechanical systems technology Samiee M, Garre K, Cahay M, Kosel PB, Fairchild S, Fraser JW, Lockwood DJ |
770 - 777 |
One-dimensional combined field and thermionic emission model and comparison with experimental results He X, Scharer J, Booske J, Sengele S |
778 - 781 |
Field electron emission from free-standing flexible PDMS-supported carbon-nanotube-array films Hong NT, Yim JH, Koh KH, Lee S, Minh PN, Khoi PH |
782 - 787 |
Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device Takeuchi M, Kojima T, Oowada A, Gotoh Y, Nagao M, Tsuji H, Ishikawa J, Sakai S, Kimoto T |
788 - 793 |
Physics of generalized Fowler-Nordheim-type equations Forbes RG |
794 - 799 |
Possibility of generating terahertz radiation by photomixing with clusters of carbon nanotubes Hagmann MJ |
800 - 805 |
Energy exchange in field emission from semiconductors Chung MS, Jang YJ, Mayer A, Cutler PH, Miskovsky NM, Weis BL |
806 - 812 |
Modeling of linear carbon nanotube nanotriodes with improved field uniformity Nicolaescu D, Filip V, Gotoh Y, Ishikawa J |
813 - 820 |
Electroluminescence of silicon nanoclusters excited by tunneling carrier injection Filip V, Wong H, Wong CK, Nicolaescu D |
821 - 825 |
Work functions of cathode surfaces with adsorbed atoms based on ab initio calculations Lin MC, Jao RF, Lin WC |
826 - 830 |
Fitting nonlinear Fowler-Nordheim plots of field emission strips with a self-consistent parallel plane model Lin MC, Liao YH |
831 - 837 |
Application of a general electron emission equation to surface nonuniformity and current density variation Jensen KL, Petillo JJ, Montgomery EJ, Pan ZG, Feldman DW, O'Shea PG, Moody NA, Cahay M, Yater JE, Shaw JL |
838 - 841 |
Toward a lateral carbon nanotube based field emission triode Monica AH, Paranjape M, Coles GL, Papadakis SJ, Osiander R |
842 - 846 |
In situ field emission characterization of multiwalled carbon nanotubes Smith RC, Cox DC, Silva SRP |
847 - 850 |
Field emission properties of single-walled carbon nanotube with amphoteric doping by encapsulation of TTF and TCNQ Lee J, Lee W, Sim K, Han SH, Yi W |
851 - 855 |
Fabrication of transparent single wall carbon nanotube films with low sheet resistance Yim JH, Kim YS, Koh KH, Lee S |
856 - 859 |
Effect of electrical aging on field emission from carbon nanotube field emitter arrays Ryu JH, Kim KS, Lee CS, Jang J, Park KC |
860 - 863 |
Improving the electron emission properties of ion-beam-synthesized Ag-SiO2 nanocomposites by pulsed laser annealing Tsang WM, Adikaari AADT, Stolojan V, Silva SRP |
864 - 867 |
Improvement of emission efficiency of nanocrystalline silicon planar cathodes Shimawaki H, Neo Y, Mimura H, Murakami K, Wakaya F, Takai M |
868 - 871 |
Cold field emission from HfC(310) Kagarice KJ, Magera GG, Pollard SD, Mackie WA |
872 - 875 |
Improved field emission characteristics of individual carbon nanotube coated with boron nitride nanofilm Morihisa Y, Kimura C, Yukawa M, Aoki H, Kobayashi T, Hayashi S, Akita S, Nakayama Y, Sugino T |
876 - 879 |
Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation Oowadaa A, Takeuchi M, Sakai Y, Gotoh Y, Nagao M, Tsuji H, Ishikawa J, Sakai S, Kimoto T |
880 - 884 |
Density control of carbon nanofibers on titanium buffer layer using electroplated Ni catalyst Yoo HS, Lee SJ, Joo SK, Sung WY |
885 - 890 |
Field emission properties of metallic nanostructures self-assembled on nanoporous alumina and silicon templates Cahay M, Garre K, Fraser JW, Lockwood DJ, Semet V, Binh VT, Kanchibotla B, Bandyopadhyay S, Grazulis L, Das B |
891 - 897 |
Field emission from lanthanum monosulfide thin films grown on the (100) magnesium oxide substrates Fairchild S, Cahay M, Grazulis L, Garre K, Wu X, Lockwood DJ, Semet V, Binh VT |
L23 - L27 |
Fabrication and characterization of InGaAsP/InP double shallow-ridge rectangular ring laser photonic integration circuits by cascade reactive ion etching/inductively coupled plasma etching Zhang R, Ren Z, Yu S |
L28 - L31 |
Fabrication of nanopores with subnanometer precision on poly(methyl methacrylate) nanofibers by in situ electron beam irradiation Duan HG, Xie EQ, Han L |