Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.18, No.3 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (138 articles)

1125 - 1133	Noise in scanning capacitance microscopy measurements Zavyalov VV, McMurray JS, Williams CC
1134 - 1137	Optical active gallium arsenide cantilever probes for combined scanning near-field optical microscopy and scanning force microscopy Heisig S, Rudow O, Oesterschulze E
1138 - 1143	Resolution in scanning near-field cathodoluminescence microscopy Pastre D, Bubendorff JL, Troyon M
1144 - 1150	Imaging of soft structures: Dependence of contrast in atomic force microscopy images on the force applied by the tip Teschke O, Ceotto G, de Souza EF
1151 - 1155	Study of Pb diffusion on Si(111)-(7x7) with scanning tunneling microscopy: Low coverage Slezak J, Chab V, Chvoj Z, Mutombo P
1156 - 1159	Study on nucleation and growth of Ag nanoparticles prepared by radio-frequency sputtering on highly oriented pyrolytic graphite and amorphous carbon Lu WG, Wu H, Xiong YQ, Guo Y, Yang DQ, Li HL
1160 - 1170	Electrical testing of gold nanostructures by conducting atomic force microscopy Bietsch A, Schneider MA, Welland ME, Michel B
1171 - 1176	Direct patterning of noble metal nanostructures with a scanning tunneling microscope Marchi F, Tonneau D, Dallaporta H, Safarov V, Bouchiat V, Doppelt P, Even R, Beitone L
1177 - 1181	Fabrication of dissimilar metal electrodes with nanometer interelectrode distance for molecular electronic device characterization Guillorn MA, Carr DW, Tiberio RC, Greenbaum E, Simpson ML
1182 - 1186	Ti/TiN coatings for microfabricated cantilevers used in atomic force microscopy Wiederhold KP, Yamaguchi Y, Ayala A, Matheaus M, Gutierrez CJ, Galloway HC
1187 - 1189	Nanometer-scale data storage on 3-phenyl-1-ureidonitrile thin film using scanning tunneling microscopy Shi DX, Ma LP, Xie SS, Pang SJ
1190 - 1193	Defect observation on a 12-in. silicon wafer using large sample atomic force microscopy Nishimura T, Wakiyama S, Yasutake M, Sugano Y, Fujino N
1194 - 1197	Characterization and nanometer-scale modifications of Bi2Te3 surface via atomic force microscopy Czajka R, Horak J, Lost'ak P, Karamazov S, Vanis J, Walachova J
1198 - 1202	Homoepitaxial diamond (001) thin film studied by reflection high-energy electron diffraction, contact atomic force microscopy, and scanning tunneling microscopy Takami T, Kusunoki I, Nishitani-Gamo M, Ando T
1203 - 1206	Comparison between tantalum carbosulfide and TaCl5-graphite intercalation compound by scanning tunneling microscopy Walter J, Shioyama H, Hara S
1207 - 1211	High current density field emission from arrays of carbon nanotubes and diamond-clad Si tips Tarntair FG, Chen LC, Wei SL, Hong WK, Chen KH, Cheng HC
1212 - 1215	Arrays of field emission cathode structures with sub-300 nm gates Bernhardt AF, Contolini RJ, Jankowski AF, Liberman V, Morse JD, Musket RG, Barton R, Macaulay J, Spindt C
1216 - 1221	Mapping the field-emission tunneling barrier of organic adsorbates on tungsten Condon GR, Panitz JA
1222 - 1226	Prebreakdown and breakdown investigation of needle-plane vacuum gaps in the micron/submicron regime Muzykov PG, Ma XY, Sudarshan TS
1227 - 1231	Influence of getter activation and aging in a frit-sealed field emission display panel Kwon SJ, Hong KJ, Lee JD, Oh CW, Yoo JS, Kwon YB
1232 - 1236	Growth of InxGa1-xAs/GaAs heterostructures using Bi as a surfactant Pillai MR, Kim SS, Ho ST, Barnett SA
1237 - 1243	Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers Polyakov AY, Smirnov NB, Govorkov AV, Dang G, Zhang AP, Ren F, Cao XA, Pearton SJ, Wilson RG
1244 - 1250	Elevated source drain devices using silicon selective epitaxial growth Samavedam SB, Dip A, Phillips AM, Tobin PJ, Mihopolous T, Taylor WJ, Adetutu O
1251 - 1253	Normal-incidence SiGe/Si photodetectors with different buffer layers Jiang RL, Lo ZY, Chen WM, Zang L, Zhu SM, Liu XB, Cheng XM, Chen ZZ, Chen P, Han P, Zheng YD
1254 - 1261	Radio frequency plasma annealing of positive charge generated by Fowler-Nordheim electron injection in buried oxides in silicon Nazarov AN, Kilchytska VI, Barchuk IP, Tkachenko AS, Ashok S
1262 - 1267	Process damage assessment of a low energy inductively coupled plasma-based neutral source Tang XM, Wang Q, Manos DM
1268 - 1275	Water-assisted repair of plasma-induced damage in the silicon/silicon-dioxide system Itsumi M, Maeda M, Takeuchi H, Morie T
1276 - 1280	Effect of oxygen plasma exposure of porous spin-on-glass films Kondoh E, Asano T, Nakashima A, Komatu M
1281 - 1287	Low temperature oxidation and selective etching of chemical vapor deposition a-SiC : H films Baklanov MR, Van Hove M, Mannaert G, Vanhaelemeersch S, Bender H, Conard T, Maex K
1288 - 1293	Navolak-diazonaphthoquinone resists: The central role of phenolic strings Reiser A, Yan ZL, Han YK, Kim MS
1294 - 1298	Modeling anomalous depth dependent dissolution effects in chemically amplified resists Cheng MS, Tyminski J, Croffie E, Neureuther A
1299 - 1305	Optimized design for the scattering with angular limitation in projection electron-beam lithography based electron projection system Xiu K, Gibson JM
1306 - 1313	Experimentation and modeling of organic photocontamination on lithographic optics Kunz RR, Liberman V, Downs DK
1314 - 1321	Role of passivation etch polymers in interfacial delamination for polymeric low-k dielectrics Breen MR, Foster CM, Bass S, Lee JJ, Mlynko W
1322 - 1332	Highly localized thermal, mechanical, and spectroscopic characterization of polymers using miniaturized thermal probes Hammiche A, Bozec L, Conroy M, Pollock HM, Mills G, Weaver JMR, Price DM, Reading M, Hourston DJ, Song M
1333 - 1337	Diffusion barrier properties of ZrN films in the Cu/Si contact systems Takeyama MB, Noya A, Sakanishi K
1338 - 1342	Schottky barrier formation at Cu/TiB2/TiSi2/Si interface Pelleg J
1343 - 1347	Kinetic simulation of metal chemical-vapor deposition on high aspect ratio features in modern very-large-scale-integrated processing Li M, Dew S, Brett M, Smy T
1348 - 1351	Effects of O-2 gas flow ratio and flow rate on the formation of RuO2 thin films by reactive sputtering Abe Y, Kaga Y, Kawamura M, Sasaki K
1352 - 1363	Process diagnostics and thickness metrology using in situ mass spectrometry for the chemical vapor deposition of W from H-2/WF6 Gougousi T, Xu YH, Kidder JN, Rubloff GW, Tilford CR
1364 - 1368	Resonance enhanced multiphoton ionization as a diagnostic tool in glow discharge plasmas Senkan S, Ly A
1369 - 1374	Channeling-induced asymmetric distortion of depth profiles from polycrystalline-TiN/Ti/TiN(001) trilayers during secondary ion mass spectrometry Ramanath G, Greene JE, Petrov I, Baker JE, Allen LH, Gillen G
1375 - 1380	X-ray rocking curve analysis of tetragonally distorted ternary semiconductors on mismatched (001) substrates Zhang XG, Parent DW, Li P, Rodriguez A, Zhao G, Ayers JE, Jain FC
1381 - 1384	Real-time composition control using spectral ellipsometry in growth of Hg1-xCdxTe by molecular beam epitaxy Aqariden F, Shih HD, Liao PK, Duncan WM, Dat R
1385 - 1391	Determination of pore size distribution in thin films by ellipsometric porosimetry Baklanov MR, Mogilnikov KP, Polovinkin VG, Dultsev FN
1392 - 1396	Characterization of low-temperature wafer bonding by infrared spectroscopy Milekhin A, Friedrich M, Hiller K, Wierner M, Gessner T, Zahn DRT
1397 - 1401	Electronic structure, growth, and structural and magnetic properties of magnetic semiconductor Fe/GaAs heterostructures Hirose S, Haneda S, Yamaura M, Hara K, Munekata H
1402 - 1405	Granulated metal nanostructure deposited by laser ablation accompanied by cascade drop fission Kozhevin VM, Yavsin DA, Kouznetsov VM, Busov VM, Mikushkin VM, Nikonov SY, Gurevich SA, Kolobov A
1406 - 1408	Nonalloy Ohmic contact fabrication in a hydrothermally grown n-ZnO (0001) substrate by KrF excimer laser irradiation Akane T, Sugioka K, Midorikawa K
1409 - 1411	Highly selective dry etching of III nitrides using an inductively coupled Cl-2/Ar/O-2 plasma Lee JM, Chang KM, Lee IH, Park SJ
1412 - 1416	Tailoring etch directionality in a deep reactive ion etching tool Ayon AA, Nagle S, Frechette L, Epstein A, Schmidt MA
1425 - 1425	Papers from the 18th North American Conference on Molecular Beam Epitaxy - Preface Mars D
1426 - 1430	Smart pyrometry for combined sample temperature and reflectance measurements in molecular-beam epitaxy Bertness KA
1431 - 1434	Real-time measurements of stress relaxation in InGaAs/GaAs Beresford R, Yin J, Tetz K, Chason E
1435 - 1438	Real-time composition control of InAlAs grown on InP using spectroscopic ellipsometry Beaudoin M, Grassi E, Johnson SR, Ramaswamy K, Tsakalis K, Alford TL, Zhang YH
1439 - 1442	Closed-loop control of resonant tunneling diode barrier thickness using in situ spectroscopic ellipsometry Roth JA, Williamson WS, Chow DH, Olson GL, Johs B
1443 - 1447	Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys Peiris FC, Lee S, Bindley U, Furdyna JK
1448 - 1452	Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy Lee KK, Doolittle WA, Brown AS, May GS, Stockh SR
1453 - 1456	Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes Hong M, Anselm KA, Kwo J, Ng HM, Baillargeon JN, Kortan AR, Mannaerts JP, Cho AY, Lee CM, Chyi JI, Lay TS
1457 - 1460	Structural and optical characterization of InGaN/GaN multiple quantum wells grown by molecular beam epitaxy Ng HM, Moustakas TD, Ludwig KF
1461 - 1466	Maskless selective epitaxy of GaN by Ga low energy focused ion beam and dimethylhydrazine Cho DH, Tanaka M, Pak K
1467 - 1471	Theoretical study of GaN molecular beam epitaxy growth using ammonia: A rate equation approach Fu WN, Venkat R
1472 - 1475	Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures Li LK, Turk B, Wang WI, Syed S, Simonian D, Stormer HL, Lang DV
1476 - 1479	Effects of hydrogen on doping of GaInNAs grown by gas-source molecular beam epitaxy Xin HP, Tu CW, Geva M
1480 - 1483	Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy Coldren CW, Spruytte SG, Harris JS, Larson MC
1484 - 1487	High performance 1.3 mu m InGaAsN : Sb/GaAs quantum well lasers grown by molecular beam epitaxy Yang X, Heroux JB, Jurkovic MJ, Wang WI
1488 - 1492	Smoothing of textured GaAs surfaces during molecular beam epitaxy growth Adamcyk M, Ballestad A, Pinnington T, Tiedje T, Davies M, Feng Y
1493 - 1495	Strain relaxation-induced modifications of the optical properties of self-assembled InAs quantum dot superlattices Petitprez E, Moshegov NT, Marega E, Mazel A, Dorignac D, Fourmeaux R
1496 - 1501	Characterization of InAs quantum dots in strained InxGa1-xAs quantum wells Stintz A, Liu GT, Gray AL, Spillers R, Delgado SM, Malloy KJ
1502 - 1506	Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots Krishna S, Sabarinathan J, Linder K, Bhattacharya P, Lita B, Goldman RS
1507 - 1509	Size distribution of quantum-scale GaAs islands grown by Ga droplet induced chemical beam epitaxy Ro JR, Kim SB, Park K, Lee J
1510 - 1513	Narrow photoluminescence linewidths from ensembles of self-assembled InGaAs quantum dots Mirin RP, Silverman KL, Christensen DH, Roshko A
1514 - 1517	Plasma-assisted molecular beam epitaxy for ZnO based II-VI semiconductor oxides and their heterostructures Chen YF, Ko HJ, Hong SK, Sekiuchi T, Yao T, Segawa Y
1518 - 1521	Controlled growth of ZnSeTe superlattices with sinusoidal compositional modulation Lee S, Bindley U, Furdyna JK, Reimer PM, Buschert JR
1522 - 1525	Growth and characterization of patterned ZnCdSe structures for application in integrated R-G-B II-VI light-emitting diodes Luo Y, Elmoumni A, Guo SP, Tamargo MC, Kelly S, Ghaemi H, Asnin V, Tomkiewicz M, Pollak FH, Chen YC
1526 - 1529	Temperature dependence of exciton localization in Zn1-xCdxSe quantum wells Diaz-Arencibia P, Hernandez-Calderon I, Hernandez-Ramirez LM, Tamargo MC
1530 - 1533	Optical properties of ZnMgSeTe quaternary alloys grown on ZnTe substrates by molecular-beam epitaxy Chang JH, Wang HM, Cho MW, Makino H, Hanada H, Yao T, Shim K, Rabitz H
1534 - 1537	p-type doping of (Zn,Mg,Cd)Se alloys using a radio frequency discharge nitrogen plasma source Lin W, Guo SP, Tamargo MC
1538 - 1541	Investigation of e-h pair compression in molecular beam epitaxy grown ZnCdSe/ZnSe multiquantum wells at volume excitation by electron beam Kozlovsky VI, Sadofyev YG
1542 - 1544	Resonant Raman scattering and photoluminescence enhancement in ZnCdSe quantum wells Hernandez-Ramirez LM, Hernandez-Calderon I
1545 - 1548	Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs Johnson SR, Dowd P, Braun W, Koelle U, Ryu CM, Beaudoin M, Guo CZ, Zhang YH
1549 - 1552	Surface migration of group V atoms in GaAsP grown on GaAs channeled substrates by molecular beam epitaxy Tatsuoka Y, Kamimoto H, Kitada T, Shimomura S, Hiyamizu S
1553 - 1556	Study of AlGaAs/GaAs quantum wells overgrown on in situ Cl-2-etched GaAs substrates Lopez-Lopez M, Luyo-Alvarado J, Melendez-Lira M, Cano-Aguilar O, Megia-Garcia C, Ortiz-Lopez J, Contreras-Puente G, Ishikawa T
1557 - 1561	In situ etching and regrowth in III-V molecular beam epitaxy for future nanotechnology Schuler H, Keller M, Lipinski M, Eberl K, Weis J, Von Klitzing K
1562 - 1565	Characterization of in situ etched and molecular beam epitaxy regrown GaAs interfaces using capacitance-voltage measurements, far infrared spectroscopy, and magnetotransport measurements Klein C, Kramp S, Beyer S, Heyn C, Hansen W, Heitmann D
1566 - 1571	Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth Park Y, Cich MJ, Zhao R, Specht P, Weber ER, Stach E, Nozaki S
1572 - 1575	In0.18Ga0.82As/GaAs1-yPy quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy Kamimoto H, Tatsuoka Y, Kitada T, Shimomura S, Hiyamizu S
1576 - 1578	In0.05Ga0.95As/Al0.3Ga0.7As quantum wells grown on a (411)A-oriented In0.06Ga0.94As ternary substrate by molecular beam epitaxy Kitano Y, Kuriyama R, Kitada T, Shimomura S, Hiyamizu S, Nishijima Y, Ishikawa H
1579 - 1582	As-4 pressure dependence of surface segregation of indium atoms during molecular beam epitaxy of In0.08Ga0.92As/GaAs superlattices on (411)A GaAs substrates Kitada T, Tatsuoka Y, Shimomura S, Hiyamizu S
1583 - 1585	Improving the surface morphology of InSb quantum-well structures on GaAs substrates Chung SJ, Ball MA, Lindstrom SC, Johnson MB, Santos MB
1586 - 1589	Observation of direct (type-I) transitions in type-II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy Mozume T, Georgiev N, Yoshida H, Neogi A, Nishimura T
1590 - 1593	Improvement of AlAs-GaAs interface roughness grown with high As overpressures Wohlert DE, Chang KL, Lin HC, Hsieh KC, Cheng KY
1594 - 1597	Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4 Liu WK, Lubyshev DI, Specht P, Zhao R, Weber ER, Gebauer J, SpringThorpe AJ, Streater RW, Vijarnwannaluk S, Songprakob W, Zallen R
1598 - 1600	Super-flat interfaces in pseudomorphic In0.72Ga0.28As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy Aoki T, Kitada T, Shimomura S, Hiyamizu S
1601 - 1604	Molecular beam epitaxial growth of monolithic 1.55 mu m vertical cavity surface emitting lasers with AlGaAsSb/AlAsSb Bragg mirrors Almuneau G, Hall E, Nakagawa S, Kim JK, Lofgreen D, Sjolund O, Luo C, Clarke DR, English JH, Coldren LA
1605 - 1608	GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates Klem JF, Blum O, Kurtz SR, Fritz J, Choquette KD
1609 - 1613	Optimization of buffer layers for InGaAs/AlGaAs PIN optical modulators grown on GaAs substrates by molecular beam epitaxy Katzer DS, Rabinovich WS, Ikossi-Anastasiou K, Gilbreath GC
1614 - 1618	InGaAs/AlGaAs intersubband transition structures grown on InAlAs buffer layers on GaAs substrates by molecular beam epitaxy Katzer DS, Rabinovich WS, Beadie G
1619 - 1622	Molecular beam epitaxial growth of vertical cavity surface emitting lasers with digital alloys and digital gradings Newman PG, Pamulapati J, Shen H, Taysing-Lara M, Liu J, Chang W, Simonis G, Koley B, Dagenais M, Feld S, Loehr J
1623 - 1627	Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes Hasenberg TC, Day PS, Shaw EM, Magarreli DJ, Olesberg JT, Yu C, Boggess TF, Flatte ME
1628 - 1632	Midinfrared type-II interband cascade lasers Bradshaw JL, Bruno JD, Pham JT, Wortman DE, Yang RQ
1633 - 1637	Electrical properties of modulation-doped InxAl1-xAs/InyGa1-yAs structures on GaAs and InP substrates with 0.2 <= x, y <= 0.8 Cai WZ, Wang ZM, Miller DL
1638 - 1641	Growth and characterization of metamorphic In-x(AlGa)(1-x)As/InxGa1-xAs high electron mobility transistor material and devices with X=0.3-0.4 Hoke WE, Lyman PS, Whelan CS, Mosca JJ, Torabi A, Chang KL, Hsieh KC
1642 - 1644	High performance InP high electron mobility transistors by valved phosphorus cracker Chin TP, Chen YC, Barsky M, Wojtowicz M, Grundbacher R, Lai R, Streit DC, Block TR
1645 - 1649	Gas source molecular beam epitaxial growth of 77 GHz InP Gunn diodes for automotive forward looking radar applications Franklin J, Kuo HC, Liu J, Vizcarra R, Pao YC, Cheng KY, Pickrell G
1650 - 1652	Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system Bennett BR, Bracker AS, Magno R, Boos JB, Bass R, Park D
1653 - 1657	Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy Yu Z, Ramdani J, Curless JA, Finder JM, Overgaard CD, Droopad R, Eisenbeiser KW, Hallmark JA, Ooms WJ, Conner JR, Kaushik VS
1658 - 1662	Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers Goorsky MS, Sandhu R, Hsing R, Naidenkova M, Wojtowicz M, Chin TP, Block TR, Streit DC
1663 - 1667	Process control of high volume pseudomorphic high electron mobility transistor and metal-semiconductor field effect transistor molecular beam epitaxy production using temperature-dependent photoluminescence Liu W, Lin ME
1668 - 1671	New approach to the independent ohmic contact formation in the structures with two parallel isotype quantum wells Sadofyev YG, Yevstigneev SV, Kopaev YV, Shipitsin DS, Shmelev SS
1672 - 1674	Laser operation at room temperature of self-organized In0.1Ga0.9As/(GaAs)(6)(AlAs)(1) quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy Ohno Y, Higashiwaki M, Shimomura S, Hiyamizu S, Ikawa S
1675 - 1679	Fabrication of GaAs quantum wires by natural selective doping and its characterization by electrostatic force microscope Yoh K, Takabayashi S
1680 - 1683	Negative differential resistance of a ridge-type InGaAs quantum wire field-effect transistor Sugaya T, Kim SJ, Nakagawa T, Sugiyama Y, Ogura M
1684 - 1687	Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structures Kobayashi M, Kitamura K, Umeya H, Jia AW, Yoshikawa A, Shimotomai M, Kato Y, Takahashi K
1688 - 1691	Characteristics of Ga2O3(Gd2O3)/GaAs interface: Structures and compositions Hong M, Kortan AR, Kwo J, Mannaerts JP, Krajewski JJ, Lu ZH, Hsieh KC, Cheng KY
1692 - 1696	Modulation-doped ZnSe/(Zn,Cd,Mn)Se quantum wells and superlattices Berry JJ, Knobel R, Ray O, Peoples W, Samarth N
1697 - 1700	Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers Sadowski J, Domagala JZ, Bak-Misiuk J, Kolesnik S, Sawicki M, Swiatek K, Kanski J, Ilver L, Strom V
1701 - 1705	Growth and nonlinear optical properties of GaAs absorber layers for AlGaAs/CaF2 semiconductor saturable absorber mirrors Schon S, Haiml M, Achermann M, Keller U
1706 - 1710	Fabrication of GaAs-based photonic band gap materials Zhou WD, Bhattacharya P, Sabarinathan J, Zhu DH
1711 - 1715	Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substrates Lin W, Tamargo MC, Wei HY, Sarney W, Salamanca-Riba L, Fitzpatrick BJ
1716 - 1719	Phase stability during molecular beam epitaxial growth of CdTe on InSb(111) substrates Huerta J, Lopez M, Zelaya-Angel O
1720 - 1723	Molecular beam epitaxy of PbSrSe and PbSe/PbSrSe multiple quantum well structures for use in midinfrared light emitting devices Fang XM, Namjou K, Chao IN, McCann PJ, Dai N, Tor G
1724 - 1727	Interface-controlled Si/SiGe-heterostructure growth and its device application Sugii N, Nakagawa K, Yamaguchi S, Miyao M
1728 - 1731	Heterostructures of pseudomorphic Ge1-yCy and Ge1-x-ySixCy alloys grown on Ge (001) substrates Dashiell MW, Kolodzey J, Boucaud P, Yam V, Lourtioz JM
1736 - 1736	Papers from the International Conference on Silicon Dielectric Interfaces - 25-27 February 2000 - Raleigh, North Carolina -Preface Paesler M
1737 - 1741	Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces Brillson LJ, Young AP, White BD, Schafer J, Niimi H, Lee YM, Lucovsky G
1742 - 1748	Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics Lucovsky G, Yang H, Niimi H, Keister JW, Rowe JE, Thorpe MF, Phillips JC
1749 - 1751	Stress and defects in silicate films and glasses Phillips JC
1752 - 1756	Controlled bond formation between chemical vapor deposition Si and ultrathin SiO2 layers Yasuda T, Nishizawa M, Yamasaki S, Tanaka K
1757 - 1763	Ar/N2O remote plasma-assisted oxidation of Si(100): Plasma chemistry, growth kinetics, and interfacial reactions Smith BC, Khandelwal A, Lamb HH
1764 - 1769	Bond strain, chemical induction, and OH incorporation in low-temperature (350-100 degrees C) plasma deposited silicon dioxide films Gupta A, Parsons GN
1770 - 1772	Hydrogen diffusion through silicon/silicon dioxide interfaces Nickel NH
1773 - 1775	Internal stress of amorphous carbon nitride films Aono M, Nitta S, Katsuno T, Iuchi T
1776 - 1784	Photoemission of the SiO2-SiC heterointerface O'Brien ML, Koitzsch C, Nemanich RJ
1785 - 1791	Band offsets of wide-band-gap oxides and implications for future electronic devices Robertson J
1792 - 1795	Bandtails and defects in microcrystalline silicon (mu c-Si : H) Fuhs W, Kanschat P, Lips K
1796 - 1804	Infrared optical constants of silicon dioxide thin films by measurements of R and T Tsu DV
1805 - 1809	Comparison of the potential fluctuations in a-Si: H measured by the optical and transport methods Sinha AK, Agarwal SC