Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.22, No.3 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (148 articles)

865 - 868	Influence of preamorphization and recrystallization on indium doping profiles in silicon Duffy R, Venezia VC, Heringa A, Pawlak BJ, Hopstaken MJP, Tamminga Y, Dao T, Roozeboom F, Wang CC, Diaz CH, Griffin PB
869 - 874	Useful protocol for evaluating subtle and important differences between photoresist formulations Pawloski AR, Nealey PF
875 - 879	Fabrication of high-quality-factor photonic crystal microcavities in InAsP/InGaAsP membranes Srinivasan K, Barclay PE, Painter O, Chen JX, Cho AY
880 - 887	In situ mass spectrometry in a 10 Torr W chemical vapor deposition process for film thickness metrology and real-time advanced process control Cho S, Henn-Lecordier L, Liu YJ, Rubloff GW
888 - 892	Size and site controlled Ga nanodots on GaAs seeded by focused ion beams Lugstein A, Basnar B, Bertagnolli E
893 - 901	Dependences of bottom and sidewall etch rates on bias voltage and source power during the etching of poly-Si and fluorocarbon polymer using SF6, C4F8, and O-2 plasmas Min JH, Lee GR, Lee JK, Moon SH, Kim CK
902 - 908	Plasma silicon oxide-silica xerogel based planar optical waveguides Ponoth SS, Agarwal NT, Persans PD, Plawsky JL
909 - 915	Batch fabrication and characterization of ultrasensitive cantilevers with submicron magnetic tips Jenkins NE, DeFlores LP, Allen J, Ng TN, Garner SR, Kuehn S, Dawlaty JM, Marohn JA
916 - 919	Scaling down of ultrathin HfO2 gate dielectrics by using a nitrided Si surface Kang CS, Choi R, Cho HJ, Kim YH, Lee JC
920 - 924	High precision determination of the elastic strain of InGaN/GaN multiple quantum wells Wu MF, Zhou SQ, Yao SD, Zhao Q, Vantomme A, Van Daele B, Piscopiello E, Van Tendeloo G, Tong YZ, Yang ZJ, Yu TJ, Zhang GY
925 - 931	Structure-property relationships in porous GaN generated by Pt-assisted electroless etching studied by Raman spectroscopy Williamson TL, Diaz DJ, Bohn PW, Molnar RJ
932 - 948	Recent advances in processing of ZnO Pearton SJ, Norton DP, Ip K, Heo YW, Steiner T
949 - 952	Secondary ion mass spectrometry analysis of vertical cavity surface-emitting lasers Kim YK, Choquette KD, Baker JE, Allerman AA
953 - 960	Hydrophobic/hydrophilic surface modification within buried air channels Salas-Vernis JL, Jayachandran JP, Park S, Kelleher HA, Allen SAB, Kohl PA
961 - 965	Growth and characterization of compressive-strain GaInAsP/InP multiple-quantum-well laser diodes with the tensile-strain GaInP quantum barrier Wu MY, Lei PH, Tsai CL, Yang CD, Huang YH, Ho WJ, Wu MC
966 - 970	Environment influence on Ti diffusion and layer degradation of a SiC/Ni2Si/TiW/Au contact structure Baeri A, Raineri V, La Via F, Puglisi V, Condorelli GG
971 - 973	Reduction of ohmic contact on p-GaN with surface treatment using Cl-2 inductively coupled plasma Su SH, Tseng CT, Hau CC, Yokoyama M, Chen SM
974 - 976	Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor Chen YW, Chen YJ, Hsu WC, Hsu RT, Wu YH, Lin YS
977 - 980	Fresnel diffraction mask for focus monitoring Yuito T, Watanabe H
981 - 984	Room-temperature nanoimprinting on metallo-organic complexes Mele E, Pisignano D, Mazzeo M, Persano L, Gigli G, Cingolani R
985 - 988	Multicolumn cell: Evaluation of the proof of concept system Haraguchi T, Sakazaki T, Satoh T, Nakano M, Hamaguchi S, Kiuchi T, Yabara H, Yasuda H
989 - 992	Formation and blistering of GaAsN nanostructure layers Weng X, Ye W, Goldman RS, Mabon JC
993 - 999	Influence of N2O plasma treatment on microstructure and thermal stability of WNx barriers for Cu interconnection Tsai KC, Wu WF, Chen JC, Pan TJ, Chao CG
1000 - 1005	Measurements of shallow trench isolation by normal incidence optical critical dimension technique Hu JT, Korlahalli R, Shivaprasad D, Yang F, Zhang XD
1006 - 1011	Characterization of material contrast and effective wavelength effects in immersion inspection Deng YF, Neureuther AR
1012 - 1016	Investigation of Ge profile on SiGe islands by scanning photoelectron microscopy Cho MH, Cho YJ, Lee MK, Park SA, Roh YS, Kim YK, Jeong K, Kang SK, Ko DH, Shin HJ, Kwon KW
1017 - 1021	Incorporation efficiency of carbon in GaAs using carbon tetrabromide in solid source molecular beam epitaxy Sun ZZ, Yoon SF, Tan KH, Zhang R, Jiang J
1022 - 1029	Conduction and trapping mechanisms in SiO2 films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition Isai GI, Holleman J, Wallinga H, Woerlee PH
1030 - 1036	Effects of O-2 and He on the properties of the trimethyl silane based low-k films Widodo J, Goh LN, Lu W, Mhaisalkar SG, Ong S, Sudijono JL, Hsia LC, Tan PY, Zeng KY
1037 - 1043	Effect of developer molecular size on roughness of dissolution front in electron-beam resist Yamaguchi T, Namatsu H
1044 - 1047	Characteristics of In0.52Al0.48As/InxGa1-xAsyP1-y/ In0.52Al0.48As high electron-mobility transistors Chen YW, Hsu WC, Chen YJ, Hsu RT, Wu YH, Lin YS
1048 - 1051	Enhanced cold field emission from 100 oriented beta-W nanoemitters Singh JP, Tang F, Karabacak T, Lu TM, Wang GC
1052 - 1059	Deep-ultraviolet resist contamination for copper/low-k dual-damascene patterning Kumar R, Singh N, Chang CK, Dong L, Wong TKS
1060 - 1066	Sulfur and low-temperature SiNx passivation of self-aligned graded-base InGaAs/InP heterostructure bipolar transistors Jin Z, Prost W, Neumann S, Tegude FJ
1067 - 1074	Alkylation of nanoporous silica thin films by high density plasma chemical vapor deposition of a-SIC : H Pan FM, Wu BW, Cho AT, Tsai KC, Tsai TG, Chao KJ, Chen JY, Chang L
1075 - 1081	Influence of the preferred orientation and thickness of zirconium nitride films on the diffusion property in copper Chen CS, Liu CP, Yang HG, Tsao CYA
1082 - 1085	Evolution of tungsten-oxide whiskers synthesized by a rapid thermal-annealing treatment Cho MH, Park SA, Yang KD, Lyo IW, Jeong K, Kang SK, Ko DH, Kwon KW, Ku JH, Choi SY, Shin HJ
1086 - 1091	Improvement of the morphological stability of Ni-silicided Si0.8Ge0.2 layers by using a molybdenum interlayer Ok YW, Kim SH, Song YJ, Shim KH, Seong TY
1092 - 1098	Interface bonding structure of hafniurn oxide prepared by direct sputtering of hafnium in oxygen Wong H, Ng KL, Zhan N, Poon MC, Kok CW
1099 - 1105	Simulation of field-emitted electron trajectories and transport from carbon nanotubes Walker DG, Zhang W, Fisher TS
1106 - 1111	Characterization of electroplated copper films for three-dimensional advanced packaging Seah CH, You GZ, Li CY, Kumar R
1112 - 1117	Electron-beam lithography with aromatic self-assembled monolayers on silicon surfaces Kuller A, El-Desawy MA, Stadler V, Geyer W, Eck W, Golzhauser A
1118 - 1122	Fabrication and characterization of a condenser zone plate for compact x-ray microscopy Rehbein S, Holmberg A, Johansson GA, Jansson PAC, Hertz HM
1123 - 1126	Sub-100 nm organic light-emitting diodes patterned with room temperature imprint lithography Suh D, Lee HH
1127 - 1133	Preparation of highly textured Mo and AIN films using a Ti seed layer for integrated high-Q film bulk acoustic resonators Lee HC, Park JY, Lee KH, Bu JU
1134 - 1140	Zirconium nitride/silver nanocomposite structures for biomedical applications Aouadi SM, Debessai M, Filip P
1141 - 1144	Characterization of a-Si : H resists for a vacuum-compatible photolithography process Jacobs RN, Stoltz AJ, Dinan JH, Salamanca-Riba L
1145 - 1149	Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors Poblenz C, Waltereit P, Rajan S, Heikman S, Mishra UK, Speck JS
1150 - 1159	Photomask Cr-MoSi etching Wu BQ
1160 - 1162	Fabrication of three-dimensional microstructures using standard ultraviolet and electron-beam lithography Galas JC, Belier B, Aassime A, Palomo J, Bouville D, Aubert J
1163 - 1173	Improved method for measuring photoacid generator kinetics in polymer thin films using normalized interdigitated electrode capacitance data Berger CM, Henderson CL
1174 - 1178	Composite thin films of (ZrO2)(x)-(Al2O3)(1-x) for high transmittance attenuated phase shifting mask in ArF optical lithography Lai FD
1179 - 1183	Oxide formation during ion bombardment of small silicon structures Kruger D, Formanek P, Pippel E, Woltersdorf J, Bugiel E, Kurps R, Weidner G
1184 - 1190	Advanced techniques for the fabrication of square spiral photonic crystals by glancing angle deposition Kennedy SR, Brett MJ
1191 - 1195	ZnO-based thin-film transistors of optimal device performance Bae HS, Im S
1196 - 1201	Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application Chang TC, Tsai TM, Liu PT, Yan ST, Chang YC, Aoki H, Sze SM, Tseng TY
1202 - 1205	Design of a complementary-metal-oxide-semiconductor-compatible field-emission magnetic sensor with adjustable sensitivity Garner DM, French RJ, Hui G, Fung A
1206 - 1209	Improved quality and reliability of ultrathin (1.4-2.3 nm) gate oxides by radical-assisted oxidation utilizing a remote ultraviolet ozone source Song YJ, Mheen B, Kim SH, Bae HC, Kang JY, Lee YS, Lee NE, Shim KH
1210 - 1212	Rapid repair of plasma ash damage in low-k dielectrics using supercritical CO2 Gorman BP, Orozco-Teran RA, Zhang Z, Matz PD, Mueller DW, Reidy RF
1213 - 1213	Chiral pattern formation: Combined transmission electron microscopy and atomic force microscopy study of tetracyanoquinodimethane thin film grown by vacuum evaporation (vol 20, pg 673, 2002) Li JC, Liu WM, Xue ZQ
1214 - 1214	Investigation of various copper seed layers for copper electrodeposition applicable to ultralarge-scale integration interconnection (vol 21, pg 33, 2003) Kim JJ, Kim SK, Lee CH, Kim YS
1217 - 1217	Papers from the 16th International Vacuum Microelectronics Conference -7-11 July 2003 - Osaka, Japan - Preface Takai M
1218 - 1221	Photoresponse of a p-type Si field emitter Mimura H, Ukeba T, Shimawaki H, Yokoo K
1222 - 1226	Extraction of emission area from Fowler-Nordheim plots Forbes RG, Deane JHB, Hamid N, Sim HS
1227 - 1233	Characterization of enhanced field emission from HfC-coated Si emitter arrays through parameter extraction Nicolaescu D, Sato T, Nagao M, Filip V, Kanemaru S, Itoh J
1234 - 1239	Analytical model for electron field emission from capped carbon nanotubes Filip V, Nicolaescu D, Tanemura M, Okuyama F
1240 - 1243	Theoretical analysis of the enhanced electric field at the triple junction Chung MS, Yoon BG, Cutler PH, Miskovsky NM
1244 - 1249	Simulation study of carbon nanotube field emission display with under-gate and planar-gate structures Lan YC, Lee CT, Hu Y, Chen SH, Lee CC, Tsui BY, Lin TL
1250 - 1257	Modeling of emitted current distribution and electron trajectories in the thin-film field-emission triode Garner DM
1258 - 1260	Remarkably low value of work function on W(100) produced by Y-O composite layer Kawakubo T, Saito Y, Miyamoto N, Nakane H, Adachi H
1261 - 1265	Electron emission from carbon black-based field emitters including diesel engine exhaust Busta H, Boldridge D, Myers R, Snider G, Korotkov A, Edwards E, Feinerman A
1266 - 1268	Characteristics of nano electron source fabricated using beam assisted process Murakami K, Takai M
1269 - 1272	Synthesis and field-emission testing of carbon nanoflake edge emitters Wang JJ, Zhu MY, Zhao X, Outlaw RA, Manos DM, Holloway BC, Park C, Anderson T, Mammana VP
1273 - 1276	Microelectron field emitter array with focus lenses for multielectron beam lithography based on silicon on insulator wafer Minh PN, Ono T, Sato N, Mimura H, Esashi M
1277 - 1281	Quadrupole-mass-spectroscopy studies on hot-filament chemical vapor deposition of carbon films with nanosized constituents Choi S, Lee S, Koh KH
1282 - 1285	Growth of aligned Cu2S nanowire arrays with AAO template and their field-emission properties Wu QB, Ren S, Deng SZ, Chen J, Xu NS
1286 - 1289	Carbon nanotube growth from Cu-Co alloys for field emission applications Hofmeister W, Kang WP, Wong YM, Davidson JL
1290 - 1293	Formation of graphite nanocones using metal nanoparticles as plasma etching masks Park H, Choi S, Lee S, Koh KH
1294 - 1297	Fabrication of low-gate-current triode field emitters with planar carbon nanoparticle cathodes Seo WJ, Choi SH, Lee SN, Koh KH
1298 - 1302	Tungsten pedestal structure for nanotriode devices Blackburn AM, Hasko DG, Ahmed H, Williams DA
1303 - 1307	Double-gate field emitters with planar carbon-nanoparticle cathodes: Simulation studies Bae S, Seo WJ, Choi S, Lee S, Koh KH
1308 - 1311	Synthesis of very dense carbon nanotube bundles using silica supported metal catalyst Yim JH, Choi S, Lee S, Koh KH
1312 - 1314	Interference fringes observed in electron emission patterns of a multiwalled carbon nanotube Hata K, Takakura A, Miura K, Ohshita A, Saito Y
1315 - 1318	Field emission from carbon nanotube Mat Zhao WJ, Rochanachivapar W, Takai M
1319 - 1326	Competition of nitrogen doping and graphitization effect for field electron emission from nanocrystalline diamond films Karabutov AV, Konov VI, Pereverzev VG, Vlasov II, Zavedeev EV, Pimenov SM
1327 - 1330	Electron emission from heavily nitrogen-doped heteroepitaxial chemical vapor deposition diamond Okano K, Mine T, Saito I, Yamaguchi H, Yamada T, Sawabe A
1331 - 1334	Efficient electron emissions from printed carbon nanotubes by surface treatments Kim KB, Song YH, Hwang CS, Chung CH, Lee JH, Choi IS, Park JH
1335 - 1337	Fabrication of carbon nanotube array and its field emission property Sato H, Takegawa H, Yamaji H, Miyake H, Hiramatsu K, Saito Y
1338 - 1341	Field-emission characteristics from carbon nanotube field emitter arrays grown on silicon emitters Yoshimoto T, Kamimaru D, Iwasaki H, Iwata T, Matsumoto K
1342 - 1344	Improvement in electron emission from carbon nanotube cathodes after Ar plasma treatment Kanazawa Y, Oyama T, Murakami K, Takai M
1345 - 1348	Relationship between field emission property and composition of carbon nanotube paste for large area cold cathode Kang SK, Choi JH, Park JH, Han JH, Yoo JB, Nam JW, Lee CK, Kim JM
1349 - 1352	Schottky emitter using boron-doped diamond Bae JH, Minh PN, Ono T, Esashi M
1353 - 1357	Field emission characteristics of defect-controlled polyimide tunneling cathode Baba A, Yoshida T, Asano T
1358 - 1361	Planar metal-insulator-semiconductor type field emitter fabricated on an epitaxial Al/Al2O3/Si(111) structure Kim JS, Hoshi T, Sawada K, Ishida M
1362 - 1366	Development of field emission displays Itoh S, Tanaka M, Tonegawa T
1367 - 1371	Development of an advanced high efficiency electro-emission device Sakemura K, Negishi N, Yamada T, Satoh H, Watanabe A, Yoshikawa T, Ogasawara K, Koshida N
1372 - 1376	Correlation between nanostructure and electron emission characteristics of a ballistic electron surface-emitting device Ichihara T, Baba T, Komoda T, Koshida N
1377 - 1381	Fabrication of carbon-nanotube field-emitter array using polymer insulator Nishimura K, Shen ZY, Fujikawa M, Hosono A, Hashimoto N, Kawamoto S, Watanabe S, Nakata S
1382 - 1385	Luminescent properties of SrGa2S4 : Sm thin-film phosphors under low-voltage excitation Iwamaru M, Nakajima H, Kominami H, Nakanishi Y, Hatanaka Y
1386 - 1389	Synthesis of Zn-doped Y2O3 : Eu fine-particle phosphor by the sol-gel method Kominami H, Eguchi C, Kottaisamy M, Nakanishi Y, Hatanaka Y
1390 - 1395	256X192 pixel field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target Takiguchi Y, Nanba M, Osada K, Watabe T, Okazabi S, Egami N, Tanioka K, Tanaka M, Itoh S
1396 - 1401	Electron emission characteristics from a single crystalline ferroelectric material by an infrared light irradiation Takamuro D, Takao H, Sawada K, Ishida M
1402 - 1406	Integration of field emitters into scanning probe microscopy sensors using focused ion and electron beams Lehrer C, Frey L, Petersen S, Ryssel H, Schafer M, Sulzbach T
1407 - 1410	Optimization of silicon field-emission arrays fabrication for space applications Wang L, Stevens R, Huq E, Loader I, Kent B, Aplin K, She JC
1411 - 1415	Adsorption of alkanethiol molecules onto carbon nanotube surface Roh S, Oh J, Choi Y, Sohn D, Kim W, Cho C, Yi W, Yoo J, Lee C, Kim J
1416 - 1419	Conductivity change of carbon nanotube with strong electron-donating and withdrawing molecules Oh J, Roh S, Yi W, Lee H, Yoo J
1427 - 1427	An international journal devoted to Microelectronics and Nanometer Structures - Processing, Measurement, and Phenomena - Preface Goodhue W
1428 - 1431	Selective epitaxial growth of GaAs on Si with strained short-period superlattices by molecular beam epitaxy under atomic hydrogen irradiation Tsuji T, Yonezu H, Ohshima N
1432 - 1435	Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection Yoh K, Ohno H, Sueoka K, Ramsteiner ME
1436 - 1440	Sb-mediated growth of n- and p-type AlGaAs by molecular beam epitaxy Johnson SR, Sadofyev YG, Ding D, Cao Y, Chaparro SA, Franzreb K, Zhang YH
1441 - 1443	Selective growth Of C-60/GaAs and the optical characteristic Ogawa M, Nishinaga J, Kida Y, Yamagata H, Aihara T, Horikoshi Y
1444 - 1449	Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy Wilk A, Zaknoune M, Godey S, Dhellemmes S, Gerard P, Chaix C, Mollot F
1450 - 1454	Single-phase growth studies of GaP on Si by solid-source molecular beam epitaxy Yu XJ, Kuo PS, Ma K, Levi O, Fejer MM, Harris JS
1455 - 1459	Epitaxial growth on gas cluster ion-beam processed GaSb substrates using molecular-beam epitaxy Krishnaswami K, Vangala SR, Zhu B, Goodhue WD, Allen LP, Santeufemio C, Liu X, Ospina MC, Whitten J, Sung C, Dauplaise H, Bliss D, Dallas G, Bakken D, Jones KS
1460 - 1462	Molecular beam epitaxial growth of mid-infrared InGaAsSb laser diodes on indium-free GaSb substrates Pei CW, Heroux JB, Wang WI
1463 - 1467	Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 mu m Fu JX, Bank SR, Wistey MA, Yuen HB, Harris JS
1468 - 1471	Molecular beam epitaxial growth of AlGaPSb and AlGaPSb/InP distributed Bragg reflectors on InP Klem JF, Serkland DK, Kim J, Wang TY
1472 - 1474	Effect of buffer layer on InSb quantum wells grown on GaAs (001) substrates Mishima TD, Santos MB
1475 - 1478	Investigation of radiative and nonradiative trap centers in ZnSe : Al layers grown by molecular beam epitaxy Oh DC, Makino H, Hanada T, Cho MW, Yao T, Song JS, Chang JH, Lu F
1479 - 1483	Low-temperature Si growth on Si (001): Impurity incorporation and limiting thickness for epitaxy Baribeau JM, Wu X, Lockwood DJ, Tay L, Sproule GI
1484 - 1486	Molecular beam epitaxy growth of ZnO using initial Zn layer and MgO buffer layer on Si(111) substrates Fujita M, Kawamoto N, Sasajima M, Horikoshi Y
1487 - 1490	Effect of Ga-rich growth conditions on the optical properties of GaN films grown by plasma-assisted molecular beam epitaxy Sampath AV, Garrett GA, Collins CJ, Boyd P, Choe J, Newman PG, Shen H, Wraback M, Molnar RJ, Caissie J
1491 - 1494	Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy Lay TS, Kuo WT, Chen LP, Lai YH, Hung WH, Wang JS, Chi JY, Shih DK, Lin HH
1495 - 1498	Similarities between Ga0.48In0.52NyP1-y and Ga0.92In0.08NyAs1-y grown on GaAs (001) substrates Hong YG, Nishikawa A, Tu CW
1499 - 1502	Heterostructures for achieving large responsivity in InAs/GaAs quantum dot infrared photodetectors Chakrabarti S, Stiff-Roberts AD, Bhattacharya P, Kennerly SW
1503 - 1507	Improvement on the InAs quantum dot size distribution employing high-temperature GaAs(100) substrate treatment Saucedo-Zeni N, Gorbatchev AY, Mendez-Garcia VH
1508 - 1511	Temperature stabilized 1.55 mu m photoluminescence in InAs quantum dots grown on InAlGaAs/InP Zhang ZH, Cheng KY
1512 - 1514	Study of structural and optical properties of quantum dots-in-a-well heterostructures Rotella P, von Winckel G, Raghavan S, Stintz A, Jiang Y, Krishna S
1515 - 1517	Temperature dependence of optical properties of Ga0.3In0.7NxAs1-x quantum dots grown on GaAs (001) Nishikawa A, Hong YG, Tu CW
1518 - 1522	CdSe quantum dots grown on ZnSe and Zn0.97Be0.03Se by molecular-beam epitaxy: Optical studies Zhou XC, Munoz M, Guo SP, Tamargo MC, Gu Y, Kuskovsky IL, Neumark GF
1523 - 1525	Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor Jang KY, Sugaya T, Hahn CK, Ogura M, Komori K, Shinoda A, Yonei K
1526 - 1528	Polarization control of vertical cavity surface emitting laser structure by using self-organized quantum wires grown on (775)B-oriented GaAs substrate by molecular beam epitaxy Ohno Y, Shimomura S, Hiyamizu S, Takasuka Y, Ogura M, Komori K
1529 - 1533	Analysis of atomic structure in InAs quantum dashes grown on AlGaAsSb metamorphic buffers Balakrishnan G, Huang SH, Dawson LR, Huffaker DL
1534 - 1538	Studies of oxide desorption from GaAs substrates via Ga2O3 to Ga2O conversion by exposure to Ga flux Wasilewski ZR, Baribeau JM, Beaulieu M, Wu X, Sproule GI
1539 - 1543	Real-time stress evolution during growth of InxAl1-xAs/GaAs metamorphic buffer layers Lynch C, Beresford R, Chason E
1544 - 1548	Influence of N-2 background pressure on the incorporation of arsenic during molecular beam epitaxy growth of GaAs Dieing T, Usher BF
1549 - 1553	Flux profile modeling: Monte Carlo simulation and numerical computation Venkat R, Pemmireddy BR, Vijayagopal R, Cheng H, Bresnahan R
1554 - 1557	Material properties and performance of metamorphic optoelectronic integrated circuits grown by molecular beam epitaxy on GaAs substrates Hoke WE, Leoni RE, Whelan CS, Kennedy TD, Torabi A, Marsh PF, Zhang Y, Xu C, Hsieh KC
1558 - 1561	Molecular-beam epitaxy growth of quantum cascade lasers on (111)B substrates for second harmonic generation Marcadet X, Ortiz V, Bengloan JY, Dhillon S, Calligaro M, Sirtori C
1562 - 1564	GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 mu m Wistey MA, Bank SR, Yuen HB, Goddard LL, Harris JS
1565 - 1569	Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications Lubyshev D, Fastenau JM, Fang XM, Wu Y, Doss C, Snyder A, Liu WK, Lamb MSM, Bals S, Song C
1570 - 1574	Metamorphic 6.00 A heterojunction bipolar transistors on InP by molecular-beam epitaxy Lange MD, Cavus A, Monier C, Sandhu RS, Block TR, Gambin VF, Sawdai DJ, Gutierrez-Aitken AL
1575 - 1579	Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II "W" structures Canedy CL, Boishin GI, Bewley WW, Kim CS, Vurgaftman I, Kim M, Lindle JR, Meyer JR, Whitman LJ
1580 - 1583	Terahertz magneto-photoconductive characterization of hydrogenic barrier donors in GaAs/AlGaAs epitaxial thin films Naweed A, Goodhue WD, Gorveatt WJ, Giles R, Waldman J, Menon V
1584 - 1587	Positron annihilation study of vacancies in GaInNAs Ptak AJ, Kurtz S, Weber MH, Lynn KG
1588 - 1592	Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy Gugov T, Gambin V, Wistey M, Yuen H, Bank S, Harris JS
1593 - 1597	Combined x-ray diffraction/scanning tunneling microscopy study of segregation and interfacial bonding in type-II heterostructures Zhong M, Steinshnider J, Weimer M, Kaspi R
1598 - 1601	Compositional analysis of graded AlxGa(1-x)As layers by x-ray energy dispersive spectrometry Mahalingam K, Wheeler R, Taferner WT, Eyink KG, Fenstermaker ST, Solomon JS