Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.25, No.3 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (86 articles)

677 - 685	Intermediate-layer lithography method for producing metal micropatterns Liu XC, Luo C
686 - 690	Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy Polyakov AY, Smirnov NB, Govorkov AV, Vdovin VI, Markov AV, Shlensky AA, Prebble E, Hanser D, Zavada JM, Pearton SJ
691 - 696	Comprehensive investigation on emitter ledge length of InGaP/GaAs heterojunction bipolar transistors Fu SI, Liu RC, Cheng SY, Lai PH, Tsai YY, Hung CW, Chen TP, Liu WC
697 - 702	Crystallographic wing tilt and thermal-stress distribution of GaN laterally overgrown on maskless V-grooved sapphire substrate by metal-organic chemical vapor deposition Xing ZG, Wang J, Wang Y, Wang XH, Zhou ZT, Chen H, Zhou JM
703 - 714	Experimental investigation of micro-mesoscale Knudsen compressor performance at low pressures Han YL, Muntz EP
715 - 720	Etch mechanisms of hybrid low-k material (SiOCH with porogen) in fluorocarbon based plasma Eon D, Damon M, Chevolleaua T, David T, Vallier L, Joubert O
721 - 724	Fabrication of GaN suspended photonic crystal membranes and resonant nanocavities on Si(111) Rosenberg A, Bussmann K, Kim M, Carter MW, Mastro MA, Holm RT, Henry RL, Caldwell JD, Eddy CR
725 - 729	Manufacturing method for the fabrication of sub-50 nm current-perpendicular-to-plane spin valve sensors Han GC, Li KB, Zheng YK, Qiu JJ, Luo P, An LH, Guo ZB, Liu ZY, Wu YH
730 - 733	Fabrication of suspended single crystal diamond devices by electrochemical etch Wang CF, Hu EL, Yang J, Butler JE
734 - 738	Improved performance of a dual-passivated heterojunction bipolar transistor Cheng SY, Fu SI, Liu WC
739 - 744	Profile control of novel non-Si gates using BCl3/N-2 plasma Shamiryan D, Paraschiv V, Eslava-Fernandez S, Demand M, Baklanov M, Beckx S, Boullart W
745 - 753	Nanoscale resist morphologies of dense gratings using electron-beam lithography Mohammad MA, Dew SK, Westra K, Li P, Aktary M, Lauw Y, Kovalenko A, Stepanova M
754 - 759	Epitaxial growth of Sc2O3 films on GaN (0001) by pulsed laser deposition Liu C, Chor EF, Tan LS, Du A
760 - 766	Low-damage fabrication of high aspect nanocolumns by using neutral beams and ferritin-iron-core mask Kubota T, Baba T, Saito S, Yamasaki S, Kumagai S, Matsui T, Uraoka Y, Fuyuki T, Yamashita I, Samukawa S
767 - 778	Poly-Si/TiN/HfO2 gate stack etching in high-density plasmas Le Gouil A, Joubert O, Cunge G, Chevolleau T, Vallier L, Chenevier B, Matko I
779 - 784	Study of photoresist etching and roughness formation in electron-beam generated plasmas Orf BJ, Walton SG, Leonhardt D, Oehrlein GS
785 - 790	UV nanoimprint materials: Surface energies, residual layers, and imprint quality Schmitt H, Frey L, Ryssel H, Rommel M, Lehrer C
791 - 795	Formation and morphology of InGaN nanoisiands on GaN(0001) Gangopadhyay S, Schmidt T, Einfeldt S, Yamaguchi T, Hommel D, Falta J
796 - 800	Sn quantum dots embedded in SiO2 formed by low energy ion implantation Zhao JP, Meng Y, Huang DX, Chu WK, Rabalais JW
801 - 807	Mask material effects in cryogenic deep reactive ion etching Sainiemi L, Franssila S
808 - 812	Spontaneous formation of Si nanocones vertically aligned to Si wafers Tsuji Y, Nakamura S, Noda S
813 - 816	Process for scanning near-field microwave microscope probes with integrated ultratall coaxial tips Wang YQ, Bettermann AD, van der Weide DW
817 - 821	Electron emission from SrTiO3-coated silicon-tip arrays Bian HJ, Chen XF, Pan JS, Sun CQ, Zhu W
822 - 828	Embedded vertically grown carbon nanotubes for field emission applications Abdi Y, Koohshorkhi J, Mohajerzadeh S, Darbari S, Sanaee Z
829 - 832	Analysis of the driving characteristic of carbon nanotube triode with high frequency Chai WQ, Lou CG, Wang Q, Lei W, Zhang XB
833 - 838	Ordered silicon nanostructures by ion beam induced glancing angle deposition Patzig C, Rauschenbach B, Erfurth W, Milenin A
839 - 844	Low bias reactive ion etching of GaAs with a SiCl4/N-2/O-2 time-multiplexed process Golka S, Schartner S, Schrenk W, Strasser G
845 - 852	Characteristics of atomic-layer-deposited thin HfxZr1-xO2 gate dielectrics Triyoso DH, Hegde RI, Schaeffer JK, Gregory R, Wang XD, Canonico M, Roan D, Hebert EA, Kim K, Jiang J, Rai R, Kaushik V, Samavedam SB, Rochat N
853 - 856	Position measurement method for alignment in UV imprint using a high index mold and "electronic" moire technique Suehira N, Terasaki A, Okushima S, Seki J, Ono H, Ina H
857 - 861	Characterization and control of unconfined lateral diffusion under stencil masks Racz Z, Seabaugh A
862 - 867	Nanopattern transfer to SiO2 by ion track lithography and highly selective HF vapor etching Skupinski M, Jensen J, Johansson A, Possnert G, Boman M, Hjort K, Razpet A
868 - 872	Novel spin-on hard mask with Si-containing bottom antireflective coating for nanolithography Choi SJ
873 - 876	Function of quantum-confinement effect in the AlGaN/AlN/GaN heterostructure with an AlN interfacial layer Kong YC, Chu RM, Zheng YD, Zhou CH, Gu SL, Zhang R, Han P, Shi Y, Jiang RL
877 - 880	Fabrication of nanbstructures using a C-methylcalix[4]resorcinarene dielectric spacer Fleischer M, Panteleit F, Wharam DA
881 - 885	High-adhesive back side metallization of ultrathin wafers Felmetsger VV
886 - 892	Analyses of chamber wall coatings during the patterning of ultralow-k materials with a metal hard mask: Consequences on cleaning strategies Chevolleau T, Darnon M, David T, Posseme N, Torres J, Joubert O
893 - 898	Nanosized tungsten carbide for NOx reduction Rumaiz AK, Lin HY, Baldytchev I, Shah SI
899 - 901	Defect-free two-dimensional-photonic crystal structures on a nonlinear optical polymer patterned by nanoimprint lithography Okinaka M, Inoue SI, Tsukagoshi K, Aoyagi Y
902 - 905	High gain AlGaAs/GaAs heterojunction bipolar transistor fabricated on SiGe/Si substrate Lew KL, Yoon SF, Loke WK, Tanoto H, Dohrman CL, Isaacson DM, Fitzgerald EA
906 - 912	Restoration and pore sealing of plasma damaged porous organosilicate low k dielectrics with phenyl containing agents Liu J, Kim W, Bao J, Shi H, Baek W, Ho PS
913 - 915	In0.68Ga0.32As/Al0.64In0.36As/InP 4.5 mu m quantum cascade lasers grown by solid phosphorus molecular beam epitaxy Chen J, Malis O, Sergent AM, Sivco DL, Weimann N, Cho AY
916 - 921	Nanosoldering of carbon nanotubes on metal electrodes with an atomic force microscope Lee S, Park JY, Cho YS, Park YD, Kuk Y, Chung JW
922 - 925	Focused ion beam tomography of a microelectronic device with sub-2-nm resolution Yeoh TS, Ives NA, Presser N, Stupian GW, Leung MS, McCollum JL, Hawley FW
926 - 930	High quality of 830 nm material grown by solid source molecular beam epitaxy for laser device printing applications Hernandez IC, McElhinney M, Zeng L, Mishournyi VA
931 - 934	Fabrication of local microvacuum package incorporating Si field emitter array and Ti getter Noda D, Hatakeyama M, Nishijyou K, Sawada K, Ishida M
935 - 939	Fabrication and material properties of NiTi nanofluid Chang H, Hsu YC
940 - 944	Novelty and versatility of self-catalytic nanowire growth: A case study with InN nanowires He MQ, Mohammad SN
945 - 947	Effect of surface pretreatment and substrate orientation on the characteristics of InAs quantum dots on Si and SiO2 substrates Yoon I, Yi C, Kirn T, Brown AS, Seabaugh A
954 - 954	Papers from the 24th North American Conference on Molecular Beam Epitaxy - 8-11 October 2006 Durham, North Carolina - Preface Millunchick JM
955 - 959	Effects of temperature, nitrogen ions, and antimony on wide depletion width GaInNAs Ptak AJ, Friedman DJ, Kurtz S
960 - 963	Impact of arsenic species (As-2/As-4) on the relaxation and morphology of step-graded InAsxP1-x on InP substrates Zhang WM, Yi CY, Brown A
964 - 968	Epitaxial overgrowth of GaN nanocolumns Averett KL, Van Nostrand JE, Albrecht JD, Chen YS, Yang CC
969 - 973	Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces Choi S, Kim TH, Everitt HO, Brown A, Losurdo M, Brun G, Moto A
974 - 977	Direct-write composition patterning of InGaN by focused thermal beam during molecular-beam epitaxy Chen X, Schaff WJ, Eastman LF
978 - 982	Thermodynamic analysis of cation incorporation during molecular beam epitaxy of nitride films using metal-rich growth conditions Hoke WE, Torabi A, Mosca JJ, Kennedy TD
983 - 986	Promising new valved source for Ga or In evaporation Sacks RN, Bichrt C
987 - 990	Chemical beam epitaxy of GaAsN/GaAs multiquantum well solar cell Freundlich A, Fotkatzikis A, Bhusal L, Williams L, Alemu A, Zhu W, Coaquira JAH, Feltrin A, Radhakrishnan G
991 - 994	Molecular beam epitaxy growth of antimonide type-II "W" high-power interband cascade lasers and long-wavelength infrared photodiodes Kim CS, Canedy CL, Aifer EH, Kim M, Bewley WW, Tischler JG, Larrabee DC, Nolde JA, Warner JH, Vurgaftman I, Jackson EM, Meyer JR
995 - 998	Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors Shen A, Lu H, Tamargo MC, Charles W, Yokomizo I, Song CY, Liu HC, Zhang SK, Zhou X, Alfano RR, Franz KJ, Gmachl C
999 - 1003	Anomalous x-ray diffraction study of disorders in epitaxial films of the Heusler alloy, Co2MnGe Collins BA, Zhong YC, Chu YS, He L, Tsui F
L15 - L18	Field emission from GaN and (Al,Ga)N/GaN nanorod heterostructures Deb P, Westover T, Kim H, Fisher T, Sands T
L19 - L21	Deposition of zinc oxide layers by high-power impulse magnetron sputtering Konstantinidis S, Hemberg A, Dauchot JP, Hecq M
1004 - 1008	Magnetoresistance of fully epitaxial MnAs/GaAs lateral spin valves Holub M, Saha D, Bhattacharyaa P
1009 - 1013	Reproducible reflection high energy electron diffraction signature's for improvement of AlN using in situ growth regime characterization Burnham SD, Namkoong G, Lee KK, Doolittle WA
1014 - 1018	Real time optical monitoring of molecular beam epitaxy of InN on SiC substrates Losurdo M, Kim TH, Choi S, Wu P, Giangregorio MM, Bruno G, Brown A
1019 - 1023	In situ spectroscopic ellipsometry to monitor surface plasmon resonant group-III metals deposited by molecular beam epitaxy Wu PC, Losurdo M, Kim TH, Choi O, Bruno G, Brown AS
1024 - 1028	GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors Holland M, Stanley CR, Reid W, Thayne I, Paterson GW, Long AR, Longo P, Scott J, Craven AJ, Gregory R
1029 - 1032	Epitaxial calcium oxide films deposited on gallium nitride surfaces Losego MD, Mita S, Collazo R, Sitar Z, Maria JP
1033 - 1038	Thin, crystalline MgO on hexagonal 6H-SIC(0001) by molecular beam epitaxy for functional oxide integration Goodrich TL, Cai Z, Losego MD, Maria JP, Ziemer KS
1039 - 1043	Integration of functional epitaxial oxides into silicon: From high-K application to nancistructures Osten HJ, Kuhne D, Laha A, Czernohorsky M, Bugiel E, Fissel A
1044 - 1048	Growth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP Simmonds PJ, Beere HE, Li HW, See P, Shields AJ, Ritchie DA
1049 - 1052	rf oxygen plasma assisted molecular beam epitaxy growth of BiFeO3 thin films on SrTiO3 (001) Kabelac J, Ghosh S, Dobal P, Katiyar R
1053 - 1057	Epitaxial growth and strain relaxation of BaTiO3 thin films on SrTiO3 buffered (001) Si by molecular beam epitaxy Niu F, Wessels BW
1058 - 1062	Unintentional calcium incorporation in Ga(Al, In, N)As Hurst JB, Lewis SD, Oye MM, Holmes AL, Ptak AJ, Reedy RC
1063 - 1065	Effect of Al composition on filtering of threading dislocations by AlxIn1-x/AlyIn1-ySb heterostructures grown on GaAs (001) Edirisooriya M, Mishima TD, Santos MB
1066 - 1071	Optical monitoring of molecular beam epitaxy growth of AlN/GaN using single-wavelength laser interferometry: A simple method of tracking real-time changes in growth rate Griffiths CL, Weeks KJ
1072 - 1076	Kinetic Monte Carlo simulation of InAs quantum dot growth on nonlithographically patterned substrates Guo W, Guico RS, Xu JM, Beresford R
1077 - 1082	Excitation dependent photoluminescence measurements of the nonradiative lifetime and quantum efficiency in GaAs Johnson SR, Ding D, Wang JB, Yu SQ, Zhang YH
1083 - 1086	Midinfrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers Li W, Shao H, Moscicka D, Torfi A, Wang WI
1087 - 1089	Optical properties of molecular-beam-epitaxy-grown InGaMnAs thin films Peiris FC, Hungerford JI, Maksimov O, Samarth N
1090 - 1092	Molecular-beam epitaxy of phosphor-free 1.3 mu m InAlGaAs multiple-quantum-well lasers on InP (100) Li W, Moscicka D, Torfi A, Wang WI
1093 - 1097	Fabrication and optical characterization of highly ordered InAs/GaAs quantum dots on nonlithographically patterned substrates Guico RS, Tzolov M, Guo W, Cloutier SG, Beresford R, Xu J
1098 - 1102	Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (similar to 80 nm) Si1-xGex step-graded buffer layers for high-kappa III-V metal-oxide-semiconductor field effect transistor applications Oye MM, Shahrjerdi D, Ok I, Hurst JB, Lewis SD, Dey S, Kelly DQ, Joshi S, Mattord TJ, Yu X, Wistey MA, Harris JS, Holmes AL, Lee JC, Banerjee SK
1103 - 1107	Study of intersubband transitions of ZnxCd1-xSe/Znx' Cdy' Mg1-x'-y' Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications Lu H, Shen A, Tamargo MC, Charles W, Yokomizo I, Munoz M, Gong Y, Neumark GF, Franz KJ, Gmachl C, Song CY, Liu HG
1108 - 1112	DX-like centers in InAs/GaAs QDIPs observed by polarization-dependent Fourier transform infrared spectroscopy Zhao ZY, Yi C, Stiff-Roberts AD, Hoffman AJ, Wasserman D, Gmachl C
1113 - 1116	Optical studies of molecular beam epitaxy grown GaAsSbN/GaAs single quantum well structures Nunna K, Iyer S, Wu L, Bharatan S, Li J, Bajaj KK, Wei X, Senger RT