441 - 449 |
Method to obtain nonuniformity information from field emission behavior Dall'Agnol FF, de Paulo AC, Paredez P, den Engelsen D, Santos TEA, Mammana VP |
450 - 459 |
Effect of energetic ions on plasma damage of porous SiCOH low-k materials Kunnen E, Baklanov MR, Franquet A, Shamiryan D, Rakhimova TV, Urbanowicz AM, Struyf H, Boullart W |
460 - 465 |
Effects of the size of silicon grain on the gate-leakage current in nanocrystalline silicon thin-film transistors Mao LF |
466 - 472 |
n-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties Gullu O, Turut A |
473 - 477 |
Effects of AlxGa1-xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition Lin KL, Chang EY, Hsiao YL, Huang WC, Luong TT, Wong YY, Li TK, Tweet D, Chiang CH |
478 - 483 |
Mn-induced growth of InAs nanowires Jabeen F, Piccin M, Felisari L, Grillo V, Bais G, Rubini S, Martelli F, d'Acapito F, Rovezzi M, Boscherini F |
484 - 489 |
Direct transfer of gold nanoislands from a MoS2 stamp to a Si-H surface Deng J, Troadec C, Hui HK, Joachim C |
490 - 494 |
Cathodoluminescent properties of nanocrystalline Lu3Ga5O12:Tb3+ phosphor for field emission display application Xu XG, Chen J, Deng SZ, Xu NS, Lin J |
495 - 499 |
Cesium and oxygen activated amorphous silicon germanium photocathodes for photoinjectors Mulhollan GA, Bierman JC |
500 - 505 |
Effects of focused MeV ion beam irradiation on the roughness of electrochemically micromachined silicon surfaces Ow YS, Azimi S, Breese MBH, Teo EJ, Mangaiyarkarasi D |
506 - 510 |
Field emission from N-doped diamond doped with dimethylurea Kudo Y, Sato Y, Masuzawa T, Yamada T, Saito I, Yoshino T, Chun WJ, Yamasaki S, Okano K |
511 - 516 |
Secondary ion mass spectrometry characterization of anomalous behavior for low dose ion implanted phosphorus in silicon Penley C, Stevie FA, Griffis DP, Siebel S, Kulig L, Lee J |
517 - 521 |
Mechanism of ultrathin tunnel barrier failure due to mechanical-stress-induced nanosized hillocks and voids Tyagi P, Hinds BJ |
522 - 526 |
Aligned dense single-walled carbon nanotube beams and cantilevers for nanoelectromechanical systems applications Lu M, Jang MW, Campbell SA, Cui TH |
527 - 537 |
Atomic radical abatement of organic impurities from electron beam deposited metallic structures Wnuk JD, Gorham JM, Rosenberg SG, Madey TE, Hagen CW, Fairbrother DH |
538 - 544 |
Parallel fabrication of monolithic nanoscopic tunnel junctions for molecular devices Gupta R, Willis BG |
545 - 548 |
X-ray photoelectron spectroscopy investigation of oxidation states in molybdenum thin films for Cu(InGa)Se-2 applications Kang YC, Khanal R, Park JY, Ramsier RD, Khatri H, Marsillac S |
549 - 553 |
Fabrication of complex three-dimensional nanostructures using focused ion beam and nanomanipulation Jeon J, Floresca HC, Kim MJ |
554 - 557 |
Depth profile analysis of helium in silicon with high-resolution elastic recoil detection analysis Tomita M, Akutsu H, Oshima Y, Sato N, Mure S, Fukuyama H, Ichihara C |
558 - 561 |
Fabrication of gated CuO nanowire field emitter arrays for application in field emission display Zhan RZ, Chen J, Deng SZ, Xu NS |
562 - 566 |
Nanoscale field emission in inert gas under atmospheric pressure Qian L, Wang YQ, Liu L, Fan SS |
567 - 572 |
Effect of copper barrier dielectric deposition process on characterization of copper interconnect Cheng YL, Chiu TJ, Wei BJ, Wang HJ, Wu J, Wang YL |
573 - 576 |
Electrical and reliability performances of nitrogen-incorporated silicon carbide dielectric by chemical vapor deposition Cheng YL, Chen SA, Chiu TJ, Wu J, Wei BJ, Chang HJ |
577 - 580 |
Effect of iodotrifluoromethane plasma for reducing ultraviolet light irradiation damage in dielectric film etching processes Ichihashi Y, Ishikawa Y, Shimizu R, Samukawa S |
581 - 587 |
Electron-beam exposure mechanisms in hydrogen silsesquioxane investigated by vibrational spectroscopy and in situ electron-beam-induced desorption Olynick DL, Cord B, Schipotinin A, Ogletree DF, Schuck PJ |
588 - 594 |
Damage engineering of boron-based low energy ion implantations on ultrashallow junction fabrications Qin S, Hu YJ, McTeer A |
595 - 607 |
Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques Rommel M, Spoldi G, Yanev V, Beuer S, Amon B, Jambreck J, Petersen S, Bauer AJ, Frey L |
608 - 612 |
Neutron transmutation doping effects in GaN Polyakov AY, Smirnov NB, Govorkov AV, Kolin NG, Merkurisov DI, Boiko VM, Korulin AV, Pearton SJ |
613 - 616 |
ZnCdSe nanowires grown by molecular beam epitaxy Lan BW, Hsiao CH, Hung SC, Chang SJ, Young SJ, Cheng YC, Chih SH, Huang BR |
617 - 622 |
Submicron organic nanofiber devices with different anode-cathode materials: A simple approach Henrichsen H, Sturm H, Boggild P, Hansen O |
623 - 626 |
Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition Jung M, Chang J, Lee H, Ha JS, Park JS, Park S, Fujii K, Yao T, Kil GS, Lee S, Cho M, Whang S, Seo YG |
627 - 630 |
Simulation of self-focusing electron emitter Yuan G, Jiang JJ, Li C, Liu WD, Mimura H |
631 - 634 |
Single-crystal gold tip for tip-enhanced Raman spectroscopy Roy D, Williams CM, Mingard K |
635 - 637 |
Removing GaAs substrate by nitric acid solution Li CC, Guan BL, Chuai DX, Guo X, Shen GD |
638 - 642 |
Fabrication of regular arrays of gold nanospheres by thermal transformation of electroless-plated films Ahn W, Blake P, Shultz J, Ware ME, Roper DK |
643 - 647 |
Resurrecting dirty atomic force microscopy calibration standards Chernoff DA, Sherman R |
648 - 648 |
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (vol 28, pg C1H5, 2010) Mody J, Duffy R, Eyben P, Goossens J, Moussa A, Polspoel W, Berghmans B, van Dal MJH, Pawlak BJ, Kaiser M, Weemaes RGR, Vandervorst W |
L21 - L24 |
Visualizing contact line phenomena on microstructured superhydrophobic surfaces Cannon AH, King WP |
L25 - L27 |
Development of ion sources from ionic liquids for microfabrication Perez-Martinez C, Guilet S, Gogneau N, Jegou P, Gierak J, Lozano P |