Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.19, No.4 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (101 articles)

1091 - 1103	Structure shape and stability of nanometric sized particles Yacaman MJ, Ascencio JA, Liu HB, Gardea-Torresdey J
1104 - 1108	Growth of germanium quantum dots on different dielectric substrates by chemical-vapor deposition Kim DW, Kim YH, Chen XD, Lee CH, Song SC, Prins FE, Kwong DL, Banerjee S
1109 - 1114	Preparation of highly ordered nanoporous Co membranes assembled by small quantum-sized Co particles Lei Y, Liang CH, Wu YC, Zhang LD, Mao YQ
1115 - 1118	Synthesis and microstructure of gallium phosphide nanowires Shi WS, Zheng YF, Wang N, Lee CS, Lee ST
1119 - 1123	Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices Cheng KG, Lee JJ, Chen Z, Shah SA, Hess K, Leburton JP, Lyding JW
1124 - 1132	Low-energy carbon and nitrogen ion implantation in silicon Barbadillo L, Hernandez MJ, Cervera M, Rodriguez P, Piqueras J, Munoz-Yague A
1133 - 1137	Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry Jiang ZX, Backer S, Lee JJ, Wu LY, Guenther T, Sieloff D, Choi P, Foisy M, Alkemade PFA
1138 - 1143	Characterization of atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors Nakajima A, Yoshimoto T, Kidera T, Obata K, Yokoyama S, Sunami H, Hirose M
1144 - 1149	Comparison of the effective oxide thickness determined by ellipsometry with the result by medium energy ion scattering spectroscopy and high-resolution transmission electron microscopy Cho HM, Lee YW, Lee IW, Moon DW, Kim BY, Kim HJ, Kim SY, Cho YJ
1150 - 1153	Spatially resolved measurements of the capacitance by scanning tunneling microscope combined with a capacitance bridge Arakawa H, Nishitani R
1154 - 1157	Applications of atomic force microscopy/scanning capacitance microscopy in imaging implant structures of semiconductor devices Chao KJ, Kingsley JR, Plano RJ, Lu X, Ward I
1158 - 1163	Focusing of low energy electrons by submicrometer patterned structures in low energy electron microscopy Kan HC, Phaneuf RJ
1164 - 1168	AlN-based film bulk acoustic resonator devices with W/SiO2 multilayers reflector for rf bandpass filter application Kim SH, Kim JH, Park HD, Yoon GW
1169 - 1172	Silicon V grooves fabricated using Ta2O5 etch mask prepared by room-temperature magnetron sputtering Chu AK, Lee KM, Lan IJ
1173 - 1179	Chemical detection based on adsorption-induced and photoinduced stresses in microelectromechanical systems devices Datskos PG, Rajic S, Sepaniak MJ, Lavrik N, Tipple CA, Senesac LR, Datskou I
1180 - 1185	Structural and electronic properties of metal-silicide/silicon interfaces: A first-principles study Yu BD, Miyamoto Y, Sugino O, Sakai A, Sasaki T, Ohno T
1186 - 1194	Effect of annealing ambient on WSix(x=2.3) sidewall deformation and contact resistance in dichlorosilane-based W-polycide gate Park SW, Kim DJ, Dong CD, Kwak NY, Kong YT, Lee CH, Lee SC, Park SH
1195 - 1200	Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide Kim SD, Park HC, Hwang IS, Rhee JK, Park DG
1201 - 1211	Characterization of Cu surface cleaning by hydrogen plasma Baklanov MR, Shamiryan DG, Tokei Z, Beyer GP, Conard T, Vanhaelemeersch S, Maex K
1212 - 1218	Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane Liu PT, Chang TC, Huang MC, Tsai MS, Sze SM
1219 - 1228	Multilayer coating and test of the optics for two new 10X Microstepper extreme-ultraviolet lithography cameras Montcalm C, Spiller E, Weber FJ, Wedowski M, Folta JA, Gullikson EM
1229 - 1234	Calculational study on membrane mask distortion and correction Murooka K, Lim MH, Smith HI
1235 - 1240	Applications of micropinch x-ray source Semyonov OG, Gurey AE, Kanavin AP, Tikhomirov AA
1241 - 1252	Plasma and X-UV source characteristics for Al targets heated by 40 ns Nd-laser pulses Whitlock RR, Greig JR, Nagel DJ, Topscher SJ
1253 - 1258	Characterization of thin photosensitive polyimide films for future metallization schemes Alford TL, Zou YL, Gadre KS, Theodore ND, Chen W
1259 - 1263	Experimental study of microcylindrical lenses fabricated using focused-ion-beam technology Fu YQ, Bryan NKA
1264 - 1268	Critical dimension guarantee for the next generation photomasks with critical dimension scanning electron microscope Iwamatsu T, Hiruta K, Morimoto H, Ataka M, Nitta J
1269 - 1292	Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluation Karecki S, Chatterjee R, Pruette L, Reif R, Vartanian V, Sparks T, Beu L, Novoselov K
1293 - 1305	Characterization of iodoheptafluoropropane as a dielectric etchant. II. Wafer surface analysis Karecki S, Chatterjee R, Pruette L, Reif R, Vartanian V, Sparks T, Lee JJ, Beu L, Miller C
1306 - 1318	Characterization of iodoheptafluoropropane as a dielectric etchant. III. Effluent analysis Karecki S, Chatterjee R, Pruette L, Reif R, Vartanian V, Sparks T, Beu L
1319 - 1327	Molecular-beam study of the plasma-surface kinetics of silicon dioxide and photoresist etching with chlorine Chang JP, Sawin HH
1328 - 1333	Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication Visconti P, Reshchikov MA, Jones KM, Wang DF, Cingolani R, Morkoc H, Molnar RJ, Smith DJ
1334 - 1338	Fabrication of photonic quantum ring laser using chemically assisted ion beam etching Kim JY, Kwak KS, Kim JS, Kang B, Kwon O
1339 - 1345	Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms Chabert P
1346 - 1357	Ion energy distributions and optical emission spectra in NF3-based process chamber cleaning plasmas Hsueh HP, McGrath RT, Ji B, Felker BS, Langan JG, Karwacki EJ
1358 - 1365	Choice of boron-carbon-nitrogen coating material for electron emission based on photoelectric yield measurements during x-ray absorption studies Jimenez I, Gago R, Garcia MM, Albella JM
1366 - 1369	Secondary electron emission of MgO thin layers prepared by the spin coating method Lee J, Jeong T, Yu S, Jin S, Heo J, Yi W, Kim JM
1370 - 1372	High-voltage triode flat-panel display using field-emission nanotube-based thin films Xu NS, Wu ZS, Deng SZ, Chen J
1373 - 1376	Fabrication of gated niobium nitride field emitter array Gotoh Y, Kashiwagi Y, Nagao M, Kondo T, Tsuji H, Ishikawa J
1377 - 1380	Application of dichroic mirror for improvement of luminance and luminous efficacy in an alternating current plasma display cell Song BM, Kim JK, Hwang MS, Yang JH, Whang KW
1381 - 1384	New plasma display panel packaging technology using electrostatic bonding method Lee DJ, Jeong JW, Kim YC, Lee YH, Ju BK, Cho TS, Choi EH, Jang J
1385 - 1387	Conical etching and electrochemical metal replication of heavy-ion tracks in polymer foils Dobrev D, Vetter J, Neumann R, Angert N
1388 - 1391	GaN ablation etching by simultaneous irradiation with F-2 laser and KrF excimer laser Akane T, Sugioka K, Hammura K, Aoyagi Y, Midorikawa K, Obata K, Toyoda K, Nomura S
1399 - 1399	Microelectronics and nanometer structures - Processing, measurement, and phenomena - Preface Nguyen C
1400 - 1403	Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for photodiodes Gotthold D, Govindaraju S, Reifsnider J, Kinsey G, Campbell J, Holmes A
1404 - 1408	Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications Starikov D, Boney C, Berishev I, Hernandez IC, Bensaoula A
1409 - 1412	Gas source molecular beam epitaxy of high quality AlxGa1-xN (0 <= x <= 1) on Si(111) Nikishin S, Kipshidze G, Kuryatkov V, Choi K, Gherasoiu I, de Peralta LG, Zubrilov A, Tretyakov V, Copeland K, Prokofyeva T, Holtz M, Asomoza R, Kudryavtsev Y, Temkin H
1413 - 1416	Gas-source molecular beam expitaxy of GaInNP/GaAs and a study of its band lineup Hong YG, Andre R, Tu CW
1417 - 1421	Faceting transition in epitaxial growth of dilute GaNAs films on GaAs Adamcyk M, Tixier S, Ruck BJ, Schmid JH, Tiedje T, Fink V, Jeffries M, Karaiskaj D, Kavanagh KL, Thewalt M
1422 - 1425	Growth and characterization of GaInNAs/GaAs multiquantum wells Gilet P, Grenouillet L, Duvaut P, Ballet P, Rolland G, Vannuffel C, Million A
1426 - 1428	GaN grown by molecular beam epitaxy with antimony as surfactant Pei CW, Turk B, Heroux JB, Wang WI
1429 - 1433	ZnO epilayers on GaN templates: Polarity control and valence-band offset Hong SK, Hanada T, Makino H, Ko HJ, Chen YF, Yao T, Tanaka A, Sasaki H, Sato S, Imai D, Araki K, Shinohara M
1434 - 1438	New phase formation of Gd2O3 films on GaAs(100) Kortan AR, Hong M, Kwo J, Mannaerts JP, Krajewski JJ, Kopylov N, Steiner C, Bolliger B, Erbudak M
1439 - 1442	Growth and characterization of MnAs/ZnSe ferromagnet/semiconductor hybrid heterostructures Chun SH, Berry JJ, Ku KC, Samarth N, Malajovich I, Awschalom DD
1443 - 1446	Molecular-beam-epitaxy growth and luminescence properties of Nd3+-doped LaF3/CaF2 thin films Zhang X, Daran E, Lahoz F, Serrano C, Pita K, Lam YL
1447 - 1454	Molecular beam epitaxial growth of IV-VI multiple quantum well structures on Si(111) and BaF2(111) and optical studies of epilayer heating Wu HZ, McCann PJ, Alkhouli O, Fang XM, McAlister D, Namjou K, Dai N, Chung SJ, Rappl PHO
1455 - 1458	Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots Ghosh S, Lenihan AS, Dutt MVG, Qasaimeh Q, Steel DG, Bhattacharya P
1459 - 1462	Formation and photoluminescence of stacked CdSe quantum dots grown by molecular beam epitaxy Murase Y, Noma T, Maehashi K, Nakashima H
1463 - 1466	Self-assembled quantum dot transformations via anion exchange Shen JJ, Brown AS, Wang YQ, Wang ZL
1467 - 1470	Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots Poole PJ, McCaffrey J, Williams RL, Lefebvre J, Chithrani D
1471 - 1474	Lateral correlation of InAs/AlInAs nanowire superlattices on InP(001) Li HX, Daniels-Race T, Hasan MA
1475 - 1478	Photoluminescence properties of self-assembled InAs quantum dots grown on InP substrates by solid source molecular beam epitaxy Zhuang QD, Yoon SF, Zheng HQ
1479 - 1482	High reflectivity symmetrically strained ZnxCdyMg1-x-ySe-based distributed Bragg reflectors for current injection devices Maksimov O, Guo SP, Fernandez F, Tamargo MC, Peiris FC, Furdyna JK
1483 - 1487	Molecular beam epitaxy growth and characterization of ZnTe : Cr2+ layers on GaAs(100) Sadofyev YG, Pevtsov VF, Dianov EM, Trubenko PA, Korshkov MV
1488 - 1491	Electrical properties of in situ As doped Hg1-xCdxTe epilayers grown by molecular beam epitaxy Selamet Y, Grein CH, Lee TS, Sivananthan S
1492 - 1496	Photoluminescence from ZnTe : Yb films grown on (100) GaAs by molecular beam epitaxy Sadofyev YG, Konnov VM, Loiko NN, Gippius AA
1497 - 1500	Determination of the indices of retraction of molecular-beam-epitaxy-grown ZnSe/ZnCdSe multiple-quantum-well structures Peiris FC, Bindley U, Furdyna JK
1501 - 1504	GaAs-substrate-based long-wave active materials with type-II band alignments Johnson SR, Chaparro S, Wang J, Samal N, Cao Y, Chen ZB, Navarro C, Xu J, Yu SQ, Smith DJ, Guo CZ, Dowd P, Braun W, Zhang YH
1505 - 1509	Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy Hoke WE, Lemonias PJ, Kennedy TD, Torabi A, Tong EK, Bourque RJ, Jang JH, Cueva G, Dumka DC, Adesida I, Chang KL, Hsieh KC
1510 - 1514	Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates Lubyshev D, Liu WK, Stewart TR, Cornfeld AB, Fang XM, Xu X, Specht P, Kisielowski C, Naidenkova M, Goorsky MS, Whelan CS, Hoke WE, Marsh PF, Millunchick JM, Svensson SP
1515 - 1518	Mobility enhancement by reduced remote impurity scattering in a pseudomorphic ln(0.7)Ga(0.3)As/In0.52Al0.48As quantum well high electron mobility transistor structure with (411) A super-flat interfaces grown by molecular-beam epitaxy Watanabe I, Kanzaki K, Aoki T, Kitada T, Shimomura S, Hiyamizu S
1519 - 1523	Molecular beam epitaxial growth and characterization of strain-compensated Al0.3In0.7P/InP/Al0.3In0.7P metamorphic-pseudomorphic high electron mobility transistors on GaAs substrates Hoke WE, Lemonias PJ, Kennedy TD, Torabi A, Tong EK, Chang KL, Hsieh KC
1524 - 1528	Molecular-beam epitaxy growth of InGaAs-InAlAs high electron mobility transistors with enhanced electron densities and measurement of InAlAs surface potential Skuras E, Pennelli G, Long AR, Stanley CR
1529 - 1535	Electrical properties of molecular beam epitaxially grown AlxGa1-xSbyAs1-y and its application in InP-based high electron mobility transistors Cai WZ, Moshegov NT, Mayer TS, Miller DL
1536 - 1540	Very-low-temperature molecular beam epitaxial growth of GaP/AlAs heterostructures for distributed Bragg reflector applications Pickrell GW, Chang KL, Lin HC, Hsieh KC, Cheng KY
1541 - 1545	Combined silicon, beryllium, and carbon tetrabromide single-port dopant source for molecular-beam epitaxy Moshegov NT, Nordquist CD, Cai WZ, Mayer TS, Lubyshev DI, Miller DL
1546 - 1549	Improved interface abruptness in pseudomorphic InGaAs/AlGaAs quantum wells with (411) A superflat interfaces grown by molecular beam epitaxy Kitada T, Nii K, Hiraoka T, Shimomura S, Hiyamizu S
1550 - 1553	Effect of growth rate on surface morphology of heavily carbon-doped InGaAs Kuhl AG, Ares R, Streater RW
1554 - 1557	Improvement of substrate temperature uniformity by using a dual-zone substrate heater in a commercial 4 in. GEN-III molecular beam epitaxy single-wafer reactor Fang XM, Yurasits TR, Loubychev D, Wu Y, Liu WK, DeBruzzi M, Priddy S, Schiprett C
1558 - 1561	Role of molecular beam epitaxy parameters on InGaAs surface roughness Deng X, Liu W, Lin ME, Zhang J
1562 - 1566	Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy Tari S, Brill G, Sivananthan S, Floyd M, Smith DJ
1567 - 1571	Effects of the substrate tilting angle on the molecular beam epitaxial growth of GaAs on Si(110) Melendez-Lira M, Santana-Aranda MA, Lopez-Lopez M, Tamura M, Yodo T, Vidal MA
1572 - 1575	Metastability of InGaAs/GaAs probed by in situ optical stress sensor Beresford R, Tetz K, Yin J, Chason E, Gonzalez MU
1576 - 1579	In situ monitoring of molecular-beam-epitaxy grown Hg1-xCdxTe by Fourier transform infrared spectroscopy Badano G, Daraselia M, Sivananthan S
1580 - 1584	Growth of HgCdTe for long-wavelength infrared detectors using automated control from spectroscopic ellipsometry measurements Phillips J, Edwall D, Lee D, Arias J
1588 - 1588	Papers from the 19th North American Conference on Molecular Beam Epitaxy - 16-18 October 2000 Tempe, Arizona - Preface Rowe JE, Wolford DJ
1589 - 1596	Surface passivation of GaAs using an ultrathin cubic GaN interface control layer Anantathanasarn S, Hasegawa H
1597 - 1605	GaAs(111)B(root 19X root 19)R23.4 degrees surface reconstruction Farrell HH, Lu J, Schultz BD, Denison AB, Palmstrom CJ
1606 - 1610	Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys Johnson RS, Hong JG, Lucovsky G
1611 - 1618	Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy Preisler EJ, Marsh OJ, Beach RA, McGill TC
1619 - 1625	Silicon on GaN(0001) and (000(1)over-bar) surfaces Lee CD, Feenstra RM, Rosa AL, Neugebauer J, Northrup JE
1626 - 1630	Effects of As-2 versus As-4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability Nosho BZ, Bennett BR, Whitman LJ, Goldenberg M
1631 - 1634	Transition to insulating behavior in the metal-semiconductor digital composite ErAs : InGaAs Driscoll DC, Hanson M, Kadow C, Gossard AC
1635 - 1639	Effects of Be on the II-VI/GaAs interface and on CdSe quantum dot formation Guo SP, Zhou X, Maksimov O, Tamargo MC, Chi C, Couzis A, Maldarelli C, Kuskovsky IL, Neumark GF
1640 - 1643	Microscopic structure of spontaneously formed islands on the GaAs(001)-(2X4) reconstructed surface LaBella VP, Ding Z, Bullock DW, Emery C, Thibado PM
1644 - 1649	Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy McKay HA, Feenstra RM, Schmidtling T, Pohl UW, Geisz JF
1650 - 1657	Influence of anisotropic in-plane strain on critical point resonances in reflectance difference data Hingerl K, Balderas-Navarro RE, Bonanni A, Stifter D
1658 - 1661	Optical anisotropy of organic layers on GaAs(001) Paraian AM, Rossow U, Park S, Salvan G, Friedrich M, Kampen TU, Zahn DRT
1662 - 1670	Calibrated scanning spreading resistance microscopy profiling of carriers in III-V structures Lu RP, Kavanagh KL, Dixon-Warren SJ, Kuhl A, Thorpe AJS, Griswold E, Hillier G, Calder I, Ares R, Streater R
1671 - 1674	Quantitative analysis of nanoscale electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor structure Schaadt DM, Miller EJ, Yu ET, Redwing JM
1675 - 1681	Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures Hashizume T, Ootomo S, Oyama S, Konishi M, Hasegawa H