Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.21, No.4 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (139 articles)

1187 - 1202	Gas-induced current decay of molybdenum field emitter arrays Reuss RH, Chalamala BR
1203 - 1209	Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. 11. Effects of source power and bias voltage in a CF4 plasma Min JH, Hwang SW, Lee GR, Moon SH
1210 - 1215	Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. III. Effects of O-2 addition to CF4 plasma Min JH, Hwang SW, Lee GR, Moon SH
1216 - 1223	Electron emission from nanotips of amorphous diamond Kan MC, Huang JL, Sung JC, Lii DF
1224 - 1229	Effect of substrate on the step coverage of plasma-enhanced chemical-vapor deposited tetraethylorthosilicate films Lan JK, Wang YL, Chao CG, Lo K, Cheng YL
1230 - 1239	Enhanced field emission from chemically etched and electropolished broad-area niobium Wang T, Reece CE, Sundelin RM
1240 - 1247	Fabrication of controlled sidewall angles in thin films using isotropic etches Ponoth SS, Agarwal NT, Persans PD, Plawsky JL
1248 - 1253	Plasma molding over deep trenches and the resulting ion and energetic neutral distributions Kim D, Economou DJ
1254 - 1257	Conductance imaging of thermally desorbed silicon oxide Park JY, Phaneuf RJ
1258 - 1264	Temperature-dependent inelastic response of passivated copper films: Experiments, analyses, and implications Shen YL, Ramamurty U
1265 - 1267	High-resolution scanning tunneling microscopy imaging of Escherichia coli lysine transfer ribonucleic acid Nishimura M, Tanaka H, Kawai T
1268 - 1272	Etch mechanism and etch-induced effects in the inductively coupled plasma etching of GaN Cheung R, Rong B, van der Drift E, Sloof WG
1273 - 1277	Inductively coupled plasma reactive ion etching of ZnO using BCI3-based plasmas Kim HK, Bae JW, Kim TK, Kim KK, Seong TY, Adesida I
1278 - 1285	Transition from sub-Poissonian to super-Poissonian shot noise in planar cold cathodes Krishnan R, Cahay M
1286 - 1290	Lithographic characterization of the printability of programmed extreme ultraviolet substrate defects Naulleau P, Goldberg KA, Anderson EH, Bokor J, Gullikson E, Harteneck B, Jackson K, Olynick D, Salmassi F, Baker S, Mirkarimi P, Spiller E, Walton C, Zhang GJ
1291 - 1296	Field emission electroluminescence on diamond and carbon nanotube films Kim U, Aslam DM
1297 - 1300	Scanning tunneling microscopy and spectroscopy studies of the oxide nanofilms on the stainless steel surface Chung ON, Chung SM
1301 - 1305	Rectifying characteristics of sputter-deposited SiGe diodes Ru GP, Wang GW, Jiang YL, Huang W, Qu XP, Zhu SY, Li BZ
1306 - 1313	Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators San Andres E, del Prado A, Martil I, Gonzalez-Diaz G, Martinez FL
1314 - 1317	Modeling of vacancy flux due to stress-induced migration Aoyagi M
1318 - 1322	Embossing of polymers using a thermosetting polymer mold made by soft lithography Xing R, Wang Z, Han YC
1323 - 1328	Copper blocking ability of nitrogen-incorporated silicon oxide film Takeda K, Ryuzaki D, Mine T, Hinode K, Yoneyama R
1329 - 1334	Reliability retention in in situ pyrolytic-gas passivated ultrathin silicon oxide gate films oxidized at 700 degrees C Yamada H
1335 - 1343	Initial phases of CuInS2-Si heteroepitaxy Calvet W, Pettenkofer C, Lewerenz HJ
1344 - 1349	Etching characteristics of porous silica (k=1.9) in neutral loop discharge plasma Morikawa Y, Mizutani N, Ozawa M, Hayashi T, Chen W, Uchida T
1350 - 1356	Growth of M-plane GaN films on gamma-LiAlO2(100) with high phase purity Sun YJ, Brandt O, Ploog KH
1357 - 1360	Field emission induced fabrication of nanostructures on Au thin films using a noncontact mode atomic force microscope Park KH, Kim J, Ha JS, Song KB
1361 - 1363	Lithography-free fabrication of sub-100 nm structures by self-aligned plasma etching of silicon dioxide layers and silicon Georgiev G, Muller-Wiegand M, Georgieva A, Ludolph K, Oesterschulze E
1364 - 1368	Electrical characterization Of SiO2/n-GaN metal-insulator-semiconductor diodes Nakano Y, Jimbo T
1369 - 1374	Three-dimensional measurement and analysis of the light emitted from Ne-Xe (4%) alternating current plasma display panel by an optical method Choi HY, Lee SH, Lee SG
1375 - 1379	Silicon carbide formation by methane plasma immersion ion implantation into silicon An ZH, Fu RKY, Chen P, Liu WL, Chu PK, Lin CL
1380 - 1383	Integrating vertically aligned carbon nanotubes on micromechanical structures Teh WH, Smith CG, Teo KBK, Lacerda RG, Amaratunga GAJ, Milne WI, Castignolles M, Loiseau A
1384 - 1390	Hybrid deposition of sputtered and evaporated multilayer thin films Martin PM, Olsen LC, Johnston JW, Depoy DM
1391 - 1402	Fundamental beam studies of deuterium and fluorine radical reaction kinetics on surfaces Greer F, Fraser D, Coburn JW, Graves DB
1403 - 1410	Polyelectrolyte effects in model photoresist developer solutions Prabhu VM, Jones RL, Lin EK, Wu WL
1411 - 1414	Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect Sim HS, Kim SI, Kim YT
1415 - 1421	Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films Choi WK, Shi J, Chor EF
1422 - 1427	Depth profiling for ultrashallow implants using backside secondary ion mass spectrometry Hongo C, Tomita M, Takenaka M, Suzuki M, Murakoshi A
1428 - 1432	Effects of treatment parameters in electric-field-enhanced postexposure bake Cheng M, Poppe J, Neureuther A
1433 - 1436	Investigation of protein adsorption with simultaneous measurements of atomic force microscope and quartz crystal microbalance Choi KH, Friedt JM, Laureyn W, Frederix F, Campitelli A, Borghs G
1437 - 1441	Synthesis of aligned bamboo-like carbon nanotubes using radio frequency magnetron sputtering Lee KY, Ikuno T, Tsuji K, Ohkura S, Honda S, Katayama M, Oura K, Hirao T
1442 - 1448	Selective sublimation processing of a molybdenum-tungsten mixed oxide thin film Ferroni M, Guidi V, Comini E, Sberveglieri G, Vomiero A, Della Mea G, Martinelli G
1449 - 1452	Two processing techniques to sandwich a 100 nm GaAs layer between ferromagnetic metallic electrodes Aziz A, Smith CG, Winiecki GP, Beere HE, Ritchie DA
1453 - 1458	Electron-beam lithography for thick refractive optical elements in SU-8 Shields EA, Williamson F, Leger JR
1459 - 1465	Temperature cycling and control system for photosensitive materials processing El-Awady K, Schaper CD, Kailath T
1466 - 1471	Effect of NH3 thermal treatment on an atomic layer deposited on tungsten films and formation of W-B-N Byun JS, Mak A, Zhang A, Yoon A, Zhang T, Gelatos A, Jackson R, Thakur R, Lee SY, Kim H
1472 - 1475	Detection of antibody peptide interaction using microcantilevers as surface stress sensors Kim BH, Mader O, Weimar U, Brock R, Kern DP
1476 - 1481	Ferromagnetism in Mn- and Co-implanted ZnO nanorods Ip K, Frazier RM, Heo YW, Norton DP, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Zavada JM, Wilson RG
1482 - 1486	Impact of quantum well intermixing on polarization anisotropy of InGaAs/InGaAsP quantum well modulators Ng SL, Djie HS, Lim HS, Lam YL, Chan YC, Dowd P, Ooi BS, Aimez V, Beauvais J, Beerens J
1487 - 1490	Characterization of advanced complementary metal-oxide-semiconductor processes with reverse secondary ion mass spectrometry profiling Jiang ZX, Lerma J, Lee JJ, Sieloff D, Chen S, Beck J, Backer S, Taylor W, Tseng H, Tobin P, Svedberg L
1491 - 1495	Pattern multiplication method and the uniformity of nanoscale multiple lines Chung KH, Choi WY, Sung SK, Kim DH, Lee JD, Park BG
1496 - 1500	Downstream oxygen etching characteristics of polymers from the parylene family Callahan RRA, Pruden KG, Raupp GB, Beaudoin SP
1501 - 1504	Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments Lee CC, Lee CP, Yeh MH, Lee WI, Kuo CT
1505 - 1510	Method on surface roughness modification to alleviate stiction of microstructures Lee CC, Hsu W
1511 - 1512	Electron cyclotron resonance plasma etching of GaSb in Cl-2/BCl3/CH4/Ar/H-2 at room temperature Langer JP, Dutta PS
1513 - 1515	In situ x-ray photoelectron spectroscopy measurement during Ta deposition on low-k dielectric SiLK (TM) Uchibori CJ, Kimura T
1518 - 1518	An International Journal Devoted to Microelectronics and Nanometer Structures - Processing, Measurement, and Phenomena - Preface Binh VT, Blavette D
1519 - 1523	Current-voltage characteristics of nonplanar cold field emitters Edgcombe CJ, Johansen AM
1524 - 1527	In situ analyzer of electron emission properties: Fowler-Nordheim plotter and Seppen-Katamuki plotter Gotoh Y, Ishizu K, Tsuji H, Ishikawa J
1528 - 1544	Electron emission theory and its application: Fowler-Nordheim equation and beyond Jensen KL
1545 - 1549	Simulations of transport and field-emission properties of carbon nanotubes Mayer A, Miskovsky NM, Cutler PH
1550 - 1555	Model parameter extraction for nonlinear Fowler-Nordheim field emission data Nicolaescu D, Nagao M, Filip V, Kanemaru S, Itoh J
1556 - 1559	Photoelectric properties of nanostructural carbonaceous films containing Ni nanocrystals investigated by picosecond laser-induced photoelectric charge emission Vouagner D, Czerwosz E, Champagnon B, Wronka H, Girardeau-Montaut JP
1560 - 1565	Fabrication of a self-aligned microtip field emission array Forrest RD, Cox DC, Tang YF, Shannon JM, Silva SRP
1566 - 1569	Fabrication and characteristics of lateral type GaN field-emission arrays using metalorganic chemical vapor deposition Lee JH, Lee MB, Hahm SH, Lee JH, Kim JS, Choi KM, Kim YH
1570 - 1573	Study of micro-glow discharges as ion sources for ion mobility spectrometry Longwitz RG, van Lintel H, Renaud P
1574 - 1580	Emission fluctuation and slope-intercept plot characterization of Pt and transition metal carbide field-emission cathodes in limited current regimes Mackie WA, Southall LA, Xie TB, Cabe GL, Charbonnier FM, McClelland PH
1581 - 1585	Emission uniformity improvement of Si field emitter arrays by surface modification Nagao M, Nicolaescu D, Matsukawa T, Kanemaru S, Itoh J, Koga K, Kawase T, Honda K, Norikane T
1586 - 1588	Diode structure amorphous selenium photodetector with nitrogen (N)-doped diamond cold cathode Oonuki K, Suzuki Y, Yamaguchi H, Okano K, Okamura Y
1589 - 1593	Fabrication and characterization of HfC coated Si field emitter arrays Sato T, Yamamoto S, Nagao M, Matsukawa T, Kanemaru S, Itoh J
1594 - 1597	Submicron poly-Si gate Si field-emitter array for generation of a collimated electron beam Shimawaki H, Shibuya S, Mimura H, Yokoo K
1598 - 1601	Optimization of Pt tip field emitter array fabricated using focused ion and electron beams Jarupoonphol W, Murakami K, Sakata K, Takai M, Hosono A, Okuda S
1602 - 1606	Stable field emission from W tips in poor vacuum conditions Tondare VN, van Druten NJ, Hagen CW, Kruit P
1607 - 1611	Measurement of work function of transition metal nitride and carbide thin films Gotoh Y, Tsuji H, Ishikawa J
1612 - 1615	Electron emission from porous silicon planar emitters Mimura H, Miyajima K, Yokoo K
1616 - 1617	Emission characteristics of ultrathin layer solid-state emitters, temperature, and thickness dependence Nakane H, Dupin JP, Binh VT
1618 - 1621	Efficiency of cathodoluminescent phosphors for a field-emission light source application Chubun NN, Chakhovskoi AG, Hunt CE
1622 - 1628	Deterioration of ZnS-type and Eu3+-activated phosphors for high-voltage field-emission displays Kajiwara K
1629 - 1632	Application of holographic diffusers to improve light uniformity of source with carbon fiber cathodes Baturin AS, Chadaev NN, Leshukov MY, Sheshin EP, Chakhovskoi AG
1633 - 1639	Role of nanostructure on electron field emission from amorphous carbon thin films Carey JD, Forrest RD, Poa CH, Silva SRP
1640 - 1643	Electron field emission properties of carbon nanotubes grown on nickel caps Cheng HF, Tsau YM, Chen YC, Hsieh YS, Lin IN
1644 - 1647	Effect of oxygen on field emission properties of ultrananocrystalline diamond-coated ungated Si tip arrays Ding MQ, Auciello O, Carlisle JA, Gruen DM
1648 - 1654	Computer simulation of the field emission properties of multiwalled carbon nanotubes for flat panel displays Hu Y, Huang CH
1655 - 1659	Excellent field emission from carbon nanotubes grown by microwave-heated chemical vapor deposition Huang JH, Chuang CC, Tsai CH, Chen WJ
1660 - 1664	Field emission characteristics of multiwalled carbon nanotubes grown at low temperatures using electron cyclotron resonance chemical vapor deposition Woo YS, Jeon DY, Han IT, Park YJ, Kim HJ, Jung JE, Kim JM, Lee NS
1665 - 1670	Modeling of the transistor characteristics of a monolithic diamond vacuum triode Wisitsora-at A, Kang WP, Davidson JL, Li C, Kerns DV, Howell M
1671 - 1674	High current diamond field emission diode Wisitsora-at A, Kang WP, Davidson JL, Howell M, Hofmeister W, Kerns DV
1675 - 1679	Fabrication of triode field emitter with planar carbon-nanoparticle cathode Park KH, Seo WJ, Lee S, Koh KH
1680 - 1683	Simulation of triode-type field emitters with thin-film cathodes Park KH, Lee S, Koh KH
1684 - 1687	Field emission characteristics of nodular carbon nanotubes Li Q, Xu JF, Yu K, Zhu ZQ, Feng T, Wang X, Liu XH, Kang WP, Davidson JL
1688 - 1691	Electron field emission properties of carbon nanotubes converted from nanodiamonds Lin IN, Teng MY, Liu KS, Hsu T, Huang JH, Tsai CH, Cheng HF
1692 - 1699	Sequential tunneling model of field emission through dielectric deposits on nanotips Filip V, Nicolaescu D, Tanemura M, Okuyama F
1700 - 1704	Energy spectra of field emission electrons from multiwalled carbon nanotubes Oshima C, Matsuda K, Kona T, Mogami Y, Yamashita T, Saito Y, Hata K, Takakura A
1705 - 1709	Selective growth of carbon nanotubes on Si microfabricated tips and application for electron field emitters Minh PN, Tuyen LTT, Ono T, Miyashita H, Suzuki Y, Mimura H, Esashi M
1710 - 1714	Effects of stress on electron emission from nanostructured carbon materials Poa CHP, Lacerda RG, Cox DC, Marques FC, Silva SRP
1715 - 1719	Field emission from nonaligned carbon nanotube-polymer matrix cathodes Poa CHP, Smith RC, Silva SRP, Watts PCP, Hsu WK, Kroto HW, Walton DRM
1720 - 1726	Field emission and growth characteristics of carbon nanotubes with optical emission spectroscopy analysis in C2H4 and CO deposition systems Han JH, Lee TY, Yoo JB, Park CY, Jung T, Kim JM, Yu S, Yi W
1727 - 1729	Flat-panel luminescent lamp using carbon nanotube cathodes Chen J, Liang XH, Deng SZ, Xu NS
1730 - 1733	Broad area electron emission from oxygen absorbed homoepitaxially grown nitrogen (N)-doped chemical vapor deposited diamond (111) surface Yamaguchi H, Mine T, Suzuki Y, Okano K, Yamada T, Sawabe A
1734 - 1737	Field emission from screen-printed carbon nanotubes irradiated by tunable ultraviolet laser in different atmospheres Zhao WJ, Kawakami N, Sawada A, Takai M
1738 - 1741	Gated carbon-based cold cathode for high current applications Jamison KD, Zollars BG, Patterson DE, Schueller R, Windischmann H, Mulhollan GA, Kloba A
1744 - 1744	Papers from the 30th Conference on the Physics and Chemistry of Semiconductor Interfaces - Preface Dow JD, Aspnes DE
1745 - 1748	Pulsed laser deposition growth of Fe3O4 on III-V semiconductors for spin injection Preisler EJ, Brooke J, Oldham NC, McGill TC
1749 - 1755	Cobalt growth on InGaP(001)(2X4): Interface formation Ludge K, Vogt P, Braun W, Richter W, Esser N
1756 - 1759	Structural and magnetic properties of (Ga,Mn)N layers grown on SiC by reactive molecular beam epitaxy Ploog KH, Dhar S, Trampert A
1760 - 1764	Self-assembled CoAs nanostructures Farrell HH, LaViolette RA, Schultz BD, Ludge K, Palmstrom CJ
1765 - 1772	Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide Fissel A, Osten HJ, Bugiel E
1773 - 1776	Selective growth of TiO2 thin films on Si(100) surfaces by combination of metalorganic chemical vapor deposition and microcontact printing methods Kang BC, Lee JH, Chae HY, Jung DY, Lee SB, Boo JH
1777 - 1782	Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures Ulrich MD, Hong JG, Rowe JE, Lucovsky G, Chan ASY, Madey TE
1783 - 1791	Spectroscopic study of chemical phase separation in zirconium silicate alloys Rayner GB, Kang D, Lucovsky G
1792 - 1797	Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications Ulrich MD, Rowe JE, Niu D, Parsons GN
1798 - 1803	Application of the simplified bond-hyperpolarizability model to fourth-harmonic generation Hansen JK, Peng HJ, Aspnes DE
1804 - 1811	Polarity control during molecular beam epitaxy growth of Mg-doped GaN Green DS, Haus E, Wu F, Chen L, Mishra UK, Speck JS
1812 - 1817	Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity Sagar A, Lee CD, Feenstra RM, Inoki CK, Kuan TS
1818 - 1821	Influence of AlN buffer on electronic properties and dislocation microstructure of AlGaN/GaN grown by molecular beam epitaxy on SiC Simpkins BS, Yu ET
1822 - 1824	Reflection high-energy electron diffraction pattern of GaN grown on 6H-SiC by metalorganic molecular beam epitaxy using AlGaN template Honda T, Kawanishi H
1825 - 1827	Virtual interface approximation model applied to spectroscopic ellipsometry for on-line composition determination of metalorganic chemical vapor deposition grown ternary nitrides Bonanni A, Schmidegg K, Montaigne-Ramil A, Sitter H, Hingerl K, Stifter D
1828 - 1838	Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors Hashizume T, Ootomo S, Inagaki T, Hasegawa H
1839 - 1843	X-ray diffraction study of InGaN/GaN superlattice interfaces Kusakabe K, Ohkawa K
1844 - 1855	Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors Hasegawa H, Inagaki T, Ootomo S, Hashizume T
1856 - 1862	Recombination dynamics of localized excitons in cubic InxGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate Chichibu SF, Onuma T, Aoyama T, Nakajima K, Ahmet P, Chikyow T, Sota T, DenBaars SP, Nakamura S, Kitamura T, Ishida Y, Okumura H
1863 - 1869	Oxygen species in Cs/O activated gallium nitride (GaN) negative electron affinity photocathodes Machuca F, Liu Z, Sun Y, Pianetta P, Spicer WE, Pease RFW
1870 - 1875	Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure Boo JH, Lim DC, Lee SB, Lee KW, Sung MM, Kim Y, Yu KS
1876 - 1880	High resolution synchrotron radiation-based x-ray photoemission spectroscopy study of the Si-rich beta-SiC(100) 3X2 surface oxidation Dunham D, Mehlberg S, Chamberlin S, Soukiassian P, Denlinger JD, Rotenberg E, Tonner BP, Hurych ZD
1881 - 1885	Silicon carbide surface structure investigated by synchrotron radiation-based x-ray diffraction Enriquez H, D'angelo M, Aristov VY, Derycke V, Soukiassian P, Renaud G, Barbier A, Chiang S, Semond F
1886 - 1890	Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical vapor deposition Chen GC, Lim DC, Lee SB, Boo JH, Kim YJ, Hong BY
1891 - 1895	Generalized interfaces Ferry DK, Akis RA, Bird JP, Elhassan M, Knezevic I, Prasad C, Shailos A
1896 - 1902	Theory of optical properties of 6.1 angstrom III-V superlattices: The role of the interfaces Magri R, Zunger A
1903 - 1907	Green's function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure Vasileska D, Prasad C, Wieder HH, Ferry DK
1908 - 1914	Comparison of density functional theory methods as applied to compound semiconductor-oxide interfaces: Slab versus cluster models Sexton JZ, Kummel AC
1915 - 1919	Surface and interface barriers of InxGa1-xAs binary and ternary alloys Wieder HH
1920 - 1923	Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices Chen W, Shin B, Goldman RS, Stiff A, Bhattacharya PK
1924 - 1927	Semiconductor waveguide inversion in disordered narrow band-gap materials Gilbert MJ, Akis R, Ferry DK
1928 - 1935	Nature of electrical contacts in a metal-molecule-semiconductor system Hsu JWP, Loo YL, Lang DV, Rogers JA
1936 - 1939	Electron heating measurements in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure system Prasad C, Ferry DK, Vasileska D, Wieder HH
1940 - 1944	Study of InGaAsP/InP multiple quantum wells grown by solid source molecular beam epitaxy Sun L, Zhang DH
1945 - 1952	Effects of Si deposition on the properties of Ga-rich (4X6) GaAs (001) surfaces Negoro N, Anantathanasarn S, Hasegawa H
1953 - 1958	Optimization and characterization of III-V surface cleaning Liu Z, Sun Y, Machuca F, Pianetta P, Spicer WE, Pease RFW
1959 - 1962	Low temperature treatment of the (001) ZnTe substrate surface with the assist of atomic hydrogen Tsutsumi K, Terakado H, Enami M, Kobayashi M